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    MARKING BS INFINEON Search Results

    MARKING BS INFINEON Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG8097/B Rochester Electronics LLC 8097 - Math Coprocessor - Dual marked (8506301ZA) Visit Rochester Electronics LLC Buy
    5490/BCA Rochester Electronics LLC 5490 - Decade Counter - Dual marked (M38510/01307BCA) Visit Rochester Electronics LLC Buy
    5405/BCA Rochester Electronics LLC 5405 - Gate - Dual marked (M38510/00108BCA) Visit Rochester Electronics LLC Buy
    54AC20/SDA-R Rochester Electronics LLC 54AC20/SDA-R - Dual marked (M38510R75003SDA) Visit Rochester Electronics LLC Buy
    UHD503R/883 Rochester Electronics LLC UHD503R/883 - Dual marked (5962-8855101CA) Visit Rochester Electronics LLC Buy

    MARKING BS INFINEON Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    FR4 Prepreg

    Abstract: data sheet germanium diode smd prepreg 1650M AN091 infineon MARKING BS INFINEON BGA615L7 smd marking s22 BGA615 infineon marking BS
    Text: D a t a S he et , R e v . 1 . 3 , F e b . 2 00 7 B G A 6 15 L7 Silicon Germanium GPS Low Noise Amplifier S m a l l S i g n a l D i s c r et e s Edition 2007-02-12 Published by Infineon Technologies AG 81726 München, Germany Infineon Technologies AG 2007.


    Original     		PDF BGA615L7 BGA615 FR4 Prepreg data sheet germanium diode smd prepreg 1650M AN091 infineon MARKING BS INFINEON BGA615L7 smd marking s22 BGA615 infineon marking BS

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet, Rev.1.3, February 2007 BGA615L7 Silicon Germanium GPS Low Noise Amplifier RF & Protection Devices Edition 2007-02-12 Published by Infineon Technologies AG 81726 München, Germany Infineon Technologies AG 2009. All Rights Reserved. Legal Disclaimer


    Original     		PDF BGA615L7 BGA615

    BGA615L7

    Abstract: BGA615 1650M data sheet germanium diode smd FR4 Prepreg GERMANIUM prepreg LNA marking CODE R0 LNA marking R0 FR4 Prepreg for RF PCB
    Text: Data Sheet, Rev.1.3, February 2007 BGA615L7 Silicon Germanium GPS Low Noise Amplifier RF & Protection Devices Edition 2007-02-12 Published by Infineon Technologies AG 81726 München, Germany Infineon Technologies AG 2009. All Rights Reserved. Legal Disclaimer


    Original     		PDF BGA615L7 BGA615 BGA615L7 BGA615 1650M data sheet germanium diode smd FR4 Prepreg GERMANIUM prepreg LNA marking CODE R0 LNA marking R0 FR4 Prepreg for RF PCB

    Germanium power

    Abstract: No abstract text available
    Text: Data Sheet, Version 1.2, March 2006 BGA615L7 Silicon Germanium GPS Low Noise Amplifier Automotive and Industrial Silicon Discretes N e v e r s t o p t h i n k i n g . Edition 2006-03-27 Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81541 München


    Original     		PDF BGA615L7 D-81541 BGA615L7 BGA619 Germanium power

    1650M

    Abstract: 2000M BGA615L7 T1595
    Text: Data Sheet, Version 1.0, June 2005 BGA615L7 Silicon Germanium GPS Low Noise Amplifier Automotive and Industrial Silicon Discretes N e v e r s t o p t h i n k i n g . Edition 2005-06-14 Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81541 München


    Original     		PDF BGA615L7 D-81541 1650M 2000M BGA615L7 T1595

    Untitled

    Abstract: No abstract text available
    Text: HYB39S16160CT-5.5/-6/-7 16MBit Synchronous DRAM 1M x 16 MBit Synchronous DRAM for High Speed Graphics Applications • High Performance: • full page optional for sequencial wrap around • Multiple Burst Read with Single Write Operation • Automatic Command


    Original     		PDF HYB39S16160CT-5 16MBit

    smd marking code bs

    Abstract: TSOP RECEIVER 39S64160BT-8 MARKING AX5 sdram 4 bank 4096 16 smd code marking t6 P-TSOPII-54
    Text: HYB39S64400/800/160BT L 64MBit Synchronous DRAM 64 MBit Synchronous DRAM • High Performance: 7.5 -8 -10 Units fCKmax. 133 125 100 MHz tCK3 7.5 8 10 ns tAC3 5.4 6 7 ns tCK2 10 10 15 ns tAC2 6 6 8 ns • Fully Synchronous to Positive Clock Edge • 0 to 70 °C operating temperature


    Original     		PDF HYB39S64400/800/160BT 64MBit P-TSOPII-54 400mil PC133 PC100 smd marking code bs TSOP RECEIVER 39S64160BT-8 MARKING AX5 sdram 4 bank 4096 16 smd code marking t6

    A86 SMD

    Abstract: PC133-333-522 128M-BIT PC100-222-620 128-MBIT
    Text: HYB 39L128160AC/T 128-MBit 3.3V Mobile-RAM 128-MBit Synchronous Low-Power DRAM Datasheet Rev. 2003-02 • Automatic and Controlled Precharge Command High Performance: -7.5 -8 Units fCK,MAX 133 125 MHz • Programmable Burst Length: 1, 2, 4, 8 and full page


    Original     		PDF 39L128160AC/T 128-MBit 54-FBGA SPT03933 A86 SMD PC133-333-522 128M-BIT PC100-222-620

    P-TSOPII-54

    Abstract: caz smd PC133 registered reference design
    Text: HYB 39S64400/800/160ET L 64-MBit Synchronous DRAM 64-MBit Synchronous DRAM Preliminary Datasheet • Automatic and Controlled Precharge Command • High Performance: -7 -7.5 -8 Units fCKMAX 143 133 125 MHz tCK3 7 7.5 8 ns tAC3 5.4 5.4 6 ns tCK2 7.5 10 10


    Original     		PDF 39S64400/800/160ET 64-MBit P-TSOPII-54 caz smd PC133 registered reference design

    Untitled

    Abstract: No abstract text available
    Text: HYB 39L256160AC 256-MBit 3.3V Mobile-RAM 256-MBit Synchronous Low-Power DRAM in Chipsize Packages Target Datasheet Rev. 09/01 • Automatic and Controlled Precharge Command High Performance: -7.5 -8 Units fCK,MAX 133 125 MHz • Programmable Burst Length: 1, 2, 4, 8 and


    Original     		PDF 39L256160AC 256-MBit 105Mhz 54-FBGA 16Mbit

    Untitled

    Abstract: No abstract text available
    Text: HYB 39L128160AC 128-MBit 3.3V Mobile-RAM 128-MBit Synchronous Low-Power DRAM in Chipsize Packages Preliminary Datasheet Rev. 09.2/01 • Automatic and Controlled Precharge Command High Performance: -7.5 -8 Units fCK,MAX 133 125 MHz • Programmable Burst Length: 1, 2, 4, 8 and


    Original     		PDF 39L128160AC 128-MBit 105Mhz 54-FBGA

    39S256160T

    Abstract: PC100-322-620 smd CAY PC100-322 P-TSOPII-54
    Text: HYB39S256400/800/160T 256MBit Synchronous DRAM 256 MBit Synchronous DRAM Preliminary Information • High Performance: -8 -8A -8B Units fCK 125 125 100 MHz tCK3 8 8 10 ns tAC3 6 6 6 ns tCK2 10 12 15 ns tAC2 6 6 7 ns • Fully Synchronous to Positive Clock Edge


    Original     		PDF HYB39S256400/800/160T 256MBit P-TSOPII-54 400mil PC100 3-2T10 HYB39S256400/800/160AT 39S256160T PC100-322-620 smd CAY PC100-322

    39S64160BT-8

    Abstract: SMD MARKING T5 application of sequential circuit CAZ MARKING marking RBY
    Text: HYB 39S64400/800/160BT L 64-MBit Synchronous DRAM 64-MBit Synchronous DRAM • Multiple Burst Read with Single Write Operation • High Performance: • Automatic and Controlled Precharge Command -7.5 -8 Units fCKMAX 133 125 MHz tCK3 7.5 8 ns tAC3 5.4 6 ns


    Original     		PDF 39S64400/800/160BT 64-MBit SPT03933 39S64160BT-8 SMD MARKING T5 application of sequential circuit CAZ MARKING marking RBY

    Untitled

    Abstract: No abstract text available
    Text: HYB 39S128400/800/160CT L 128-MBit Synchronous DRAM 128-MBit Synchronous DRAM • Multiple Burst Read with Single Write Operation • High Performance: -7 -7.5 -8 Units • Automatic and Controlled Precharge Command fCK 143 133 125 MHz • Data Mask for Read/Write Control (x4, x8)


    Original     		PDF 39S128400/800/160CT 128-MBit

    SMD MARKING T20

    Abstract: smd marking T22 MARKING A3 SMD MARKING CODE a09
    Text: HYB 39S64400/800CT L 64-MBit Synchronous DRAM 64-MBit Synchronous DRAM • High Performance: • Full page (optional) for sequential wrap around • Multiple Burst Read with Single Write Operation -7.5 -8 Units fCKMAX 133 125 MHz tCK3 7.5 8 ns • Automatic and Controlled Precharge


    Original     		PDF 39S64400/800CT 64-MBit SPT03933 SMD MARKING T20 smd marking T22 MARKING A3 SMD MARKING CODE a09

    39S256160T

    Abstract: PC100-322-620 MARKING AX5 SMD MARKING T20
    Text: HYB 39S256400/800/160T 256-MBit Synchronous DRAM 256-MBit Synchronous DRAM • Multiple Burst Read with Single Write Operation • High Performance: • Automatic and Controlled Precharge Command -7.5 -8 -8A -8B Units fCK 133 125 125 100 MHz tCK3 7.5 8 8 10


    Original     		PDF 39S256400/800/160T 256-MBit SPT03933 39S256160T PC100-322-620 MARKING AX5 SMD MARKING T20

    P-TSOPII-54

    Abstract: Q67100-Q1838 Q67100-Q2781
    Text: HYB 39S64400/800/160BT L 64-MBit Synchronous DRAM 64-MBit Synchronous DRAM • Multiple Burst Read with Single Write Operation • High Performance: • Automatic and Controlled Precharge Command -7.5 -8 Units fCKMAX 133 125 MHz tCK3 7.5 8 ns tAC3 5.4 6 ns


    Original     		PDF 39S64400/800/160BT 64-MBit SPT03933 P-TSOPII-54 Q67100-Q1838 Q67100-Q2781

    PC100-322-620

    Abstract: 39S256 PC133 registered reference design HYB 39S256400CT-7.5 PC-100-322-620
    Text: HYB39S256400/800/160CT L 256MBit Synchronous DRAM 256 MBit Synchronous DRAM • High Performance: -7.5 -8 -8A Units fCK 133 125 125 MHz tCK3 7.5 8 8 ns tAC3 5.4 6 6 ns tCK2 10 10 12 ns tAC2 6 6 6 ns • Fully Synchronous to Positive Clock Edge • 0 to 70 °C operating temperature


    Original     		PDF HYB39S256400/800/160CT 256MBit P-TSOPII-54 400mil PC133 PC100 SPT03933 PC100-322-620 39S256 PC133 registered reference design HYB 39S256400CT-7.5 PC-100-322-620

    tube az1

    Abstract: smd CAY smd marking T22 smd transistor at t21 PC100-322-620 MARKING AX5 by1 SMD marking RBY transistor smd marking mx transistor SMD t15
    Text: HYB 39S256400/800/160T 256-MBit Synchronous DRAM 256-MBit Synchronous DRAM • Multiple Burst Read with Single Write Operation • High Performance: • Automatic and Controlled Precharge Command -7.5 -8 -8A -8B Units fCK 133 125 125 100 MHz tCK3 7.5 8 8 10


    Original     		PDF 39S256400/800/160T 256-MBit SPT03933 tube az1 smd CAY smd marking T22 smd transistor at t21 PC100-322-620 MARKING AX5 by1 SMD marking RBY transistor smd marking mx transistor SMD t15

    A1E transistor

    Abstract: No abstract text available
    Text: B S 107 Infineon tcehnologi*» SIPMOS * Small-Signal Transistor • N channel • Enhancement mode • Logic Level 3 •^GS th = 0.8.2.0V Pin 1 VPT05548 Pin 2 S Pin 3 G Type Vbs fe BDS(on) Package Marking BS 107 200 V 0.13 A 26 a tO -92 BS 107 Type BS 107


    OCR Scan     		PDF Q67000-S078 E6288 S35bQ5 Q133777 SQT-89 B535bQ5 D13377Ã B235bG5 D13377T A1E transistor

    Untitled

    Abstract: No abstract text available
    Text: BS 170 I nf ineon la c h n o I og i • s SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level 3 VPT05548 • ^GS th = 0-8-2.0V Pin 3 Pin 2 Pin 1 G S Type ^OS b flDS(on) Package Marking BS 170 60 V 0.3 A 5Ü TO-92 BS 170 Type


    OCR Scan     		PDF VPT05548 Q67000-S076 E6288 S35bG5 Q133777 SQT-89 B535bQ5 D13377Ã B235bG5 D13377T

    smd code LGG

    Abstract: No abstract text available
    Text: BSP 88 Infineon technologies SIPMOS * Small-Signal Transistor • N channel • Enhancement mode • Logic Level •^GS th = 0.6. 1.2V Type BSP 8 8 Type BSP 8 8 ^bs h> 240 V 0.32 A Ordering Code Q67000-S070 ^DS(on) 8 Q Package Marking SOT-223 BSP 88 Tape and Reel Information


    OCR Scan     		PDF Q67000-S070 OT-223 E6327 S35bQ5 Q133777 SQT-89 B535bQ5 D13377Ã B235bG5 D13377T smd code LGG

    smd code book transistor

    Abstract: TRANSISTOR SMD MARKING CODE c015 TRANSISTOR SMD MARKING CODE 5c smd transistor c015 P-T0252-3-1 D 92 M - 02 DIODE SMD TRANSISTOR MARKING 5c all transistor book SMD TRANSISTOR MARKING fq smd code book KO
    Text: BSP 92 Infineon t « c h n o l o g i •* SIPMOS Small-Signal Transistor • P channel • Enhancement mode • Logic Level • ^GS th = -0 .8 .-2 .0 V Pin 1 Type ^bs b BSP 92 -240 V -0.2 A Type BSP 92 Ordering Code Q62702-S653 Pin 2 °D S (on) Package


    OCR Scan     		PDF OT-223 Q62702-S653 E6327 fiS35bG5 D133777 SQT-89 O-92-E6288 smd code book transistor TRANSISTOR SMD MARKING CODE c015 TRANSISTOR SMD MARKING CODE 5c smd transistor c015 P-T0252-3-1 D 92 M - 02 DIODE SMD TRANSISTOR MARKING 5c all transistor book SMD TRANSISTOR MARKING fq smd code book KO

    smd marking code BS sot-23 infineon

    Abstract: No abstract text available
    Text: BSS 83P Infineon f*chnologj*4 Preliminary Data SIPMOS Small-Signal-T ransistor Features Product Summary • P Channel Drain source voltage '/os • Enhancement mode Drain-Source on-state resistance • Avalanche rated Continuous drain current wDS oni 2 -0.33


    OCR Scan     		PDF OT-23 Q67041-S1416 S35bQ5 Q133777 SQT-89 B535bQ5 D13377Ã B235bG5 D13377T smd marking code BS sot-23 infineon