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    MARKING BBW Search Results

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    Part ECAD Model Manufacturer Description Download Buy
    MG8097/B Rochester Electronics LLC 8097 - Math Coprocessor - Dual marked (8506301ZA) Visit Rochester Electronics LLC Buy
    5490/BCA Rochester Electronics LLC 5490 - Decade Counter - Dual marked (M38510/01307BCA) Visit Rochester Electronics LLC Buy
    5405/BCA Rochester Electronics LLC 5405 - Gate - Dual marked (M38510/00108BCA) Visit Rochester Electronics LLC Buy
    54AC20/SDA-R Rochester Electronics LLC 54AC20/SDA-R - Dual marked (M38510R75003SDA) Visit Rochester Electronics LLC Buy
    UHD503R/883 Rochester Electronics LLC UHD503R/883 - Dual marked (5962-8855101CA) Visit Rochester Electronics LLC Buy

    MARKING BBW Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors 2SD2114 TRANSISTOR NPN SOT-23 FEATURES z High DC current gain. z High emitter-base voltage. z Low VCE (sat). 1. BASE 2.EMITTER 3.COLLECTOR MARKING: BBV,BBW MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)


    Original     		PDF OT-23 2SD2114 OT-23 100MHz 500mA,

    BBV marking

    Abstract: 2SD2114 bbv 08 BBV transistor marking BBW
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors 2SD2114 TRANSISTOR NPN SOT-23 FEATURES z High DC current gain. z High emitter-base voltage. z Low VCE (sat). 1. BASE 2.EMITTER 3.COLLECTOR MARKING: BBV,BBW MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


    Original     		PDF OT-23 2SD2114 OT-23 100MHz 500mA, BBV marking 2SD2114 bbv 08 BBV transistor marking BBW

    BBV transistor

    Abstract: marking BBW marking BBV BBV marking
    Text: 2SD2114 SOT-23 Transistor NPN SOT-23 1. BASE 2.EMITTER 3.COLLECTOR Features — High DC current gain. hFE = 1200 (Typ.) High emitter-base voltage. VEBO =12V (Min.) Low VCE (sat). VCE (sat) = 0.18V (Typ.) (IC/IB=500mA / 20mA) — — MARKING: BBV,BBW MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


    Original     		PDF OT-23 2SD2114 OT-23 500mA 500mA, 100MHz BBV transistor marking BBW marking BBV BBV marking

    marking BBW

    Abstract: No abstract text available
    Text: DCR0029A 3.2GHz MHz BBW BPF Rev 0 – Origin Date: November 13, 2006 – Revision Date November 13, 2006 Features • Low Loss • Symmetrical Attenuation • Surface Mount Device Description Silver Ag coated coupled ceramic resonators mounted on PCB. Developed


    Original     		PDF DCR0029A -30oC 5R51880 marking BBW

    marking code BBH

    Abstract: st marking BBM code st smd diode marking code SMD circuits MARKING CODE AA smd code marking 333 SMBJ8.5CA marking code BUH Marking Code SMD bbz ae SMC MARKING SMD CODE BUQ
    Text: DIODES,SMD,Transient Voltage Suppression EMC, FILTERS & SUPPRESSION An extensive range of unidirectional and bidirectional transient voltage suppressors offering a high energy absorption capability ranging from 400W up to 1500W. Available in surface mount or through hole packages. Designed to protect voltage sensitive components, these


    Original     		PDF SMA/DO214AC SMCJ20CA SMCJ22CA SMCJ24CA SMCJ26CA SMCJ28CA SMCJ30CA SMCJ33CA SMCJ40CA SMCJ48CA marking code BBH st marking BBM code st smd diode marking code SMD circuits MARKING CODE AA smd code marking 333 SMBJ8.5CA marking code BUH Marking Code SMD bbz ae SMC MARKING SMD CODE BUQ

    bq 8050

    Abstract: HF S4 13003 F6 13003 bL78L05 HF 13003 bq d882 2SC945 KJG BAV99 WG 13003 2SC945 AQ
    Text: 目 录 CONTENTS Page 产品索引（按字母顺序） ALPHANUMERIC INDEX A 产品目录表（按电性能） TABLE OF CONTENTS G 小信号开关二极管 Small Signal Switching Diodes G 小信号肖特基二极管 Small Signal Schottky Diodes H 双极型晶体管


    Original     		PDF OD-123 OD-123 OD-323 OD-323 OD-523 OD-523 OT-23 OT-23 OT-323 OT-323 bq 8050 HF S4 13003 F6 13003 bL78L05 HF 13003 bq d882 2SC945 KJG BAV99 WG 13003 2SC945 AQ

    bbc 127 324 DIODE

    Abstract: 1.0 SMBJ SMBJ130A SMBJ100A SMBJ16CA SMBJ6.5A SMBJ12A SMBJ28A SMBJ40A SMBJ13CA
    Text: SMBJ Transil Features • Peak pulse power: – 600 W 10/1000 s – 4 kW (8/20 µs) A ■ Stand off voltage range: from 5 V to 188 V ■ Unidirectional and bidirectional types ■ Low leakage current: – 0.2 µA at 25 °C – 1 µA at 85 °C ■ Operating Tj max: 150 °C


    Original     		PDF DO-214AA) bbc 127 324 DIODE 1.0 SMBJ SMBJ130A SMBJ100A SMBJ16CA SMBJ6.5A SMBJ12A SMBJ28A SMBJ40A SMBJ13CA

    bbc 127 324 DIODE

    Abstract: marking bbz st marking BBM code SMBJ30A DO-214AA 0/bbc 127 324 DIODE SMBJ16CA-TR bbg marking st transil marking BUZ SMBJ40A st marking BBN code
    Text: SMBJ Transil Features • Peak pulse power: – 600 W 10/1000 s – 4 kW (8/20 µs) A ■ Stand off voltage range: from 5 V to 188 V ■ Unidirectional and bidirectional types ■ Low leakage current: – 0.2 µA at 25 °C – 1 µA at 85 °C ■ Operating Tj max: 150 °C


    Original     		PDF DO-214AA) bbc 127 324 DIODE marking bbz st marking BBM code SMBJ30A DO-214AA 0/bbc 127 324 DIODE SMBJ16CA-TR bbg marking st transil marking BUZ SMBJ40A st marking BBN code

    bbc 127 324 DIODE

    Abstract: marking code BBW st marking BBM code SMBJ12A BUV 481 marking code BUH SMBJ15 SMBJ6.0A/CA smbj marking code st 718 diode
    Text: SMBJ Transil Features • Peak pulse power: – 600 W 10/1000 s – 4 kW (8/20 µs) ■ Stand off voltage range: from 5 V to 188 V ■ Unidirectional and bidirectional types ■ Low leakage current: – 0.2 µA at 25 °C – 1 µA at 85 °C ■ A K


    Original     		PDF DO-214AA) MIL-STD-750, bbc 127 324 DIODE marking code BBW st marking BBM code SMBJ12A BUV 481 marking code BUH SMBJ15 SMBJ6.0A/CA smbj marking code st 718 diode

    bbc 127 324 DIODE

    Abstract: st marking BBM code smbj33ca smbj marking code st 718 diode BUV 481 SMBJ30A DO-214AA SMBJ15 transil diode OCT2001
    Text: SMBJ Transil Features • Peak pulse power: – 600 W 10/1000 s – 4 kW (8/20 µs) A ■ Stand off voltage range: from 5 V to 188 V ■ Unidirectional and bidirectional types ■ Low leakage current: – 0.2 µA at 25 °C – 1 µA at 85 °C ■ Operating Tj max: 150 °C


    Original     		PDF DO-214AA) MIL-STD-750, bbc 127 324 DIODE st marking BBM code smbj33ca smbj marking code st 718 diode BUV 481 SMBJ30A DO-214AA SMBJ15 transil diode OCT2001

    BUV 481

    Abstract: bbg "marking" diode IPC7531 bbg marking st transil marking bbz ST BUN marking BBW smbj12a SMBJ24a SMBJ12A-TR
    Text: SMBJ Transil Features • Peak pulse power: – 600 W 10/1000 s ■ Stand off voltage range: from 5 V to 188 V ■ Unidirectional and bidirectional types ■ Operating Tj max: 150 °C ■ JEDEC registered package outline A K Unidirectional SMB (JEDEC DO-214AA)


    Original     		PDF DO-214AA) IEC61000-4-2 IEC61000-4-5 UL94V-0 MIL-STD-750, RS-481 IEC60286-3 IPC7531 BUV 481 bbg "marking" diode bbg marking st transil marking bbz ST BUN marking BBW smbj12a SMBJ24a SMBJ12A-TR

    SMBJ5.0A DO214AA

    Abstract: marking code BBW SMBJ5.0A buz bbg "marking" diode SMBJ5.0A bbz marking code st marking BBM code SMBJ15 SMBJ13A-TR SMBJ15A-TR
    Text: SMBJ5.0A-TR, CA-TR SMBJ188A-TR, CA-TR TRANSIL Features • Peak pulse power: 600 W 10/1000 µs ■ Stand off voltage range: from 5 V to 188 V ■ Uni and bidirectional types ■ Low clamping factor ■ Fast response time ■ JEDEC registered package outline


    Original     		PDF SMBJ188A-TR, DO-214AA) SMBJ5.0A DO214AA marking code BBW SMBJ5.0A buz bbg "marking" diode SMBJ5.0A bbz marking code st marking BBM code SMBJ15 SMBJ13A-TR SMBJ15A-TR

    st marking BBM code

    Abstract: bbn DIODE SMBJ36ATR st marking BBN code BUA DIODE marking code BBW ST BUN marking BBO code SMBJ5.0A buz SMBJ13A-TR
    Text: SMBJ5.0A-TR, CA-TR SMBJ188A-TR, CA-TR TRANSIL Features • Peak pulse power: 600 W 10/1000 µs ■ Stand off voltage range: from 5 V to 188 V ■ Uni and bidirectional types ■ Low clamping factor ■ Fast response time ■ JEDEC registered package outline


    Original     		PDF SMBJ188A-TR, DO-214AA) st marking BBM code bbn DIODE SMBJ36ATR st marking BBN code BUA DIODE marking code BBW ST BUN marking BBO code SMBJ5.0A buz SMBJ13A-TR

    FY632

    Abstract: FW625
    Text: ADVANCE‡ 128Mb MULTIBANK BURST FLASH 32Mb/64Mb ASYNC/PAGE CellularRAM COMBO FLASH AND CellularRAM COMBO MEMORY MT28C128532W18D MT28C128564W18D Low Voltage, Wireless Temperature Features Figure 1: 77-Ball FBGA • Stacked die Combo package Includes two 64Mb Flash devices


    Original     		PDF 128Mb 32Mb/64Mb 09005aef80b10a55 MT28C128564W18D FY632 FW625

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE‡ 128Mb MULTIBANK BURST FLASH 32Mb/64Mb ASYNC/PAGE CellularRAM COMBO FLASH AND CellularRAM COMBO MEMORY MT28C128532W18/W30D MT28C128564W18/W30D Low Voltage, Wireless Temperature Features Figure 1: 77-Ball FBGA • Stacked die Combo package Includes two 64Mb Flash devices


    Original     		PDF 128Mb 32Mb/64Mb MT28C128532W18/W30D MT28C128564W18/W30D 77-Ball 09005aef80b10a55 MT28C128564W18D

    FW643

    Abstract: FX639 FX649 FY631 FY627 w18 SMD smd transistor w18 w18 smd transistor FY651 FW649
    Text: ADVANCE‡ 128Mb MULTIBANK BURST FLASH 32Mb/64Mb ASYNC/PAGE CellularRAM COMBO FLASH AND CellularRAM COMBO MEMORY MT28C128532W18/W30D MT28C128564W18/W30D Low Voltage, Wireless Temperature Features Figure 1: 77-Ball FBGA • Stacked die Combo package Includes two 64Mb Flash devices


    Original     		PDF 128Mb 32Mb/64Mb MT28C128532W18/W30D MT28C128564W18/W30D 77-Ball 09005aef80b10a55 MT28C128564W18D FW643 FX639 FX649 FY631 FY627 w18 SMD smd transistor w18 w18 smd transistor FY651 FW649

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors 2SD2114 TRANSISTOR NPN SOT-23 FEATURES z High DC current gain. hFE = 1200 (Typ.) z High emitter-base voltage. VEBO =12V (Min.) z Low VCE (sat). VCE (sat) = 0.18V (Typ.) (IC/IB=500mA / 20mA)


    Original     		PDF OT-23 2SD2114 OT-23 500mA 100MHz 500mA,

    BBV marking

    Abstract: 2SD2114
    Text: 2SD2114 0.5 A, 25 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead free FEATURES z z z High DC current gain :hFE = 1200 Typ High emitter-base voltage. VEBO =12V (Min.) Low VCE (sat). VCE (sat) = 0.18V (Typ.) (IC/IB=500mA / 20mA)


    Original     		PDF 2SD2114 500mA OT-23 500mA, 100MHz 01-June-2005 BBV marking 2SD2114

    st marking BBM code

    Abstract: bbn DIODE SMBJ18A-TR SMBJ10A-TR SMBJ12A-TR SMBJ13A-TR SMBJ15A-TR SMBJ16A-TR SMBJ188A-TR SMBJ20A-TR
    Text: SMBJ5.0A-TR, CA-TR SMBJ188A-TR, CA-TR TRANSIL Features • Peak pulse power: 600 W 10/1000 µs ■ Stand off voltage range: from 5 V to 188 V ■ Uni and bidirectional types ■ Low clamping factor ■ Fast response time ■ JEDEC registered package outline


    Original     		PDF SMBJ188A-TR, DO-214AA) st marking BBM code bbn DIODE SMBJ18A-TR SMBJ10A-TR SMBJ12A-TR SMBJ13A-TR SMBJ15A-TR SMBJ16A-TR SMBJ188A-TR SMBJ20A-TR

    BBV transistor

    Abstract: 2SD2114 SOT-23 2.D SOT-23-hg VEBO-12V transistor k 820
    Text: 2SD2114 0.5A , 25V NPN Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURE High DC Current Gain. High Emitter-Base Voltage. VEBO=12V Min. A L 3 3 C B Top View CLASSIFICATION OF hFE


    Original     		PDF 2SD2114 OT-23 2SD2114-V 2SD2114-W 500mA, 100MHz 24-Feb-2011 BBV transistor 2SD2114 SOT-23 2.D SOT-23-hg VEBO-12V transistor k 820

    Untitled

    Abstract: No abstract text available
    Text: TPS62040 TPS62042, TPS62043 TPS62044, TPS62046 www.ti.com SLVS463B − JUNE 2003 − REVISED OCTOBER 2005 1.2 A/1.25 MHz, HIGH-EFFICIENCY STEP-DOWN CONVERTER FEATURES D Up to 95% Conversion Efficiency D Typical Quiescent Current: 18 µA D Load Current: 1.2 A


    Original     		PDF TPS62040 TPS62042, TPS62043 TPS62044, TPS62046 SLVS463B

    sps gf20

    Abstract: gf20 connector EWCAP-15 GF20
    Text: TABLE OF CONTENTS SHEET NO. SHEET DESCRIPTION 1 NOTES 2 KEY CONFIGURATIONS 3 BLADE SEALED ASSEMBLY i SYSTEM PACKAGING 5 BOM n u . a ITTI D © Í7TI ITO I BLADE S E A LE D ASSEM BLY OPTIONAL LASER MARKING THIS SURFACE SEE NOTE 3g. & ^ HD a 5 S 1 > KD Ò


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: Omnimate Range - 3.50 mm Pitch . Socket blocks BLIDC . Socket blocks BLIDCB Socket blocks BLIDC . • • H hB w w b^bB H 8B B B B H H w B W B W W W bbwW W W IiBB w w I Technical data VDE UL CSA Technical data VDE UL CSA Technical data VDE UL CSA Rated voltage V


    OCR Scan     		PDF 190Marking

    s21c

    Abstract: No abstract text available
    Text: SILICON NPN EPITAXIAL PLANAR T Y P E TRAN SISTO R \ 2 S Q 5 FOR VCO APPLICATION Q 7 U nit in mm 2 1±0 1 MAXIMUM RATINGS Ta = 25°C CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Em itter-Base Voltage Collector C urrent Base C urrent Collector Power Dissipation


    OCR Scan     		PDF SC-70 2SC5107 s21c