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    2SD2114 Price and Stock

    ROHM Semiconductor 2SD2114KT146W

    TRANS NPN 20V 0.5A SMT3
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    DigiKey 2SD2114KT146W Digi-Reel 12,209 1
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    2SD2114KT146W Cut Tape 12,209 1
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    2SD2114KT146W Reel 9,000 3,000
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    Mouser Electronics 2SD2114KT146W 13,440
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    Verical 2SD2114KT146W 39,833 257
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    Quest Components 2SD2114KT146W 912
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    TME 2SD2114KT146W 10
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    ROHM Semiconductor 2SD2114KT146V

    TRANS NPN 20V 0.5A SMT3
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    DigiKey 2SD2114KT146V Digi-Reel 10,257 1
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    2SD2114KT146V Reel 6,000 3,000
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    Mouser Electronics 2SD2114KT146V 7,519
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    Verical 2SD2114KT146V 40,903 937
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    2SD2114KT146V 1,585 758
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    Newark 2SD2114KT146V Cut Tape 5,368 5
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    2SD2114KT146V Reel 3,000
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    Quest Components 2SD2114KT146V 1,524
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    2SD2114KT146V 1,524
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    2SD2114KT146V 1,268
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    2SD2114KT146V 905
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    TME 2SD2114KT146V 1
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    Avnet Asia 2SD2114KT146V 24 Weeks 3,000
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    Chip1Stop 2SD2114KT146V Cut Tape 40,903
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    CoreStaff Co Ltd 2SD2114KT146V 1,585
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    Win Source Electronics 2SD2114KT146V 22,000
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    ROHM Semiconductor 2SD2114K-T146V

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    Bristol Electronics 2SD2114K-T146V 1,905 23
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    Secos Corporation 2SD2114

    NPN Plastic Encapsulated Transistor
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    Win Source Electronics 2SD2114 22,000
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    2SD2114 Datasheets (18)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SD2114 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SD2114 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SD2114K Kexin Power Transistor Original PDF
    2SD2114K ROHM 20V,0.5A high-current gain medium power transistor Original PDF
    2SD2114K ROHM High-current Gain Medium Power Transistor (20V, 0.5A) Original PDF
    2SD2114K ROHM High-current Gain Medium Power Transistor (20V, 0.5A) Original PDF
    2SD2114K TY Semiconductor Power Transistor - SOT-23 Original PDF
    2SD2114K Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SD2114K Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SD2114K ROHM EM3, UMT, SMT Transistors Scan PDF
    2SD2114KS ROHM High-current Gain Medium Power Transistor Original PDF
    2SD2114KT146V ROHM High-Current Gain Medium Power Transistor (20 V, 0.5 A) Original PDF
    2SD2114KT146V ROHM TRANS NPN 20V 0.5V SOT-346 Original PDF
    2SD2114KT146W ROHM High-Current Gain Medium Power Transistor (20 V, 0.5 A) Original PDF
    2SD2114KT146W ROHM TRANS NPN 20V 0.5V SOT-346 Original PDF
    2SD2114KU ROHM High-current Gain Medium Power Transistor (20V, 0.5A) Original PDF
    2SD2114KW ROHM High-current Gain MediumPower Transistor (20V, 0.5A) Original PDF
    2SD2114S ROHM 20V,0.5A high-current gain medium power transistor Original PDF

    2SD2114 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TRANSISTOR C107

    Abstract: c107 TRANSISTOR C107 IMX9 "dual TRANSISTORs" "General Purpose Transistor" c107 TRANSISTOR equivalent NPN Silicon Epitaxial Planar Transistor 2SD2114K 96517
    Text: Transistors General purpose transistor isolated dual transistors IMX9 FFeatures 1) Two 2SD2114K chips in a SMT package. 2) Mounting possible with SMT3 automatic mounting machine. 3) Transistor elements are independent, eliminating interference. 4) Mounting cost and area can be cut


    Original     		PDF 2SD2114K 96-517-C107) TRANSISTOR C107 c107 TRANSISTOR C107 IMX9 "dual TRANSISTORs" "General Purpose Transistor" c107 TRANSISTOR equivalent NPN Silicon Epitaxial Planar Transistor 96517

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors 2SD2114 TRANSISTOR NPN SOT-23 FEATURES z High DC current gain. z High emitter-base voltage. z Low VCE (sat). 1. BASE 2.EMITTER 3.COLLECTOR MARKING: BBV,BBW MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)


    Original     		PDF OT-23 2SD2114 OT-23 100MHz 500mA,

    2SD2144S

    Abstract: No abstract text available
    Text: 2SD2114K / 2SD2144S Transistors High-current Gain Medium Power Transistor 20V, 0.5A 2SD2114K / 2SD2144S zExternal dimensions (Unit : mm) zFeatures 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO =12V (Min.) 3) Low VCE (sat).


    Original     		PDF 2SD2114K 2SD2144S 500mA 2SD2114K SC-59 15Min. 2SD2144S

    Untitled

    Abstract: No abstract text available
    Text: High-current Gain Medium Power Transistor 20V, 0.5A 2SD2114K Features 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO =12V (Min.) 3) Low VCE (sat). VCE (sat) = 0.18V (Typ.) (IC / IB = 500mA / 20mA) Dimensions (Unit : mm)


    Original     		PDF 2SD2114K 500mA SC-59 R1120A

    2SD2144S

    Abstract: 2SD2114K SC-72 T146
    Text: 2SD2114K / 2SD2144S Transistors High-current Gain Medium Power Transistor 20V, 0.5A 2SD2114K / 2SD2144S zExternal dimensions (Unit : mm) zFeatures 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO =12V (Min.) 3) Low VCE (sat).


    Original     		PDF 2SD2114K 2SD2144S 500mA 2SD2114K SC-59 15Min. 2SD2144S SC-72 T146

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Epitaxial planar type NPN silicon transistor 2SD2114KVLT1G Series Series zFeatures S-L 2SD2114KVLT1G 1 High DC current gain. hFE = 1200 Typ.) 2) High emitter-base voltage. 3 VEBO =12V (Min.) 3) Low VCE (sat). 1 VCE (sat) = 0.18V (Typ.)


    Original     		PDF L2SD2114KVLT1G 2SD2114KVLT1G 500mA 236AB) AEC-Q101 S-L2SD2114KVLT1G OT-23

    BBV marking

    Abstract: 2SD2114
    Text: 2SD2114 0.5 A, 25 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead free FEATURES z z z High DC current gain :hFE = 1200 Typ High emitter-base voltage. VEBO =12V (Min.) Low VCE (sat). VCE (sat) = 0.18V (Typ.) (IC/IB=500mA / 20mA)


    Original     		PDF 2SD2114 500mA OT-23 500mA, 100MHz 01-June-2005 BBV marking 2SD2114

    Untitled

    Abstract: No abstract text available
    Text: High-current Gain Medium Power Transistor 20V, 0.5A 2SD2114K Features 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO =12V (Min.) 3) Low VCE (sat). VCE (sat) = 0.18V (Typ.) (IC / IB = 500mA / 20mA) Dimensions (Unit : mm)


    Original     		PDF 2SD2114K 500mA SC-59 R1120A

    Untitled

    Abstract: No abstract text available
    Text: High-current Gain Medium Power Transistor 20V, 0.5A 2SD2114K Dimensions (Unit : mm) Features 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO =12V (Min.) 3) Low VCE (sat). VCE (sat) = 0.18V (Typ.) (IC / IB = 500mA / 20mA)


    Original     		PDF 2SD2114K 500mA SC-59 R1120A

    2SD2144S

    Abstract: 2SD2114K SC-72 T146
    Text: 2SD2114K / 2SD2144S Transistors High-current Gain Medium Power Transistor 20V, 0.5A 2SD2114K / 2SD2144S zExternal dimensions (Units : mm) zFeatures 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO =12V (Min.) 3) Low VCE (sat).


    Original     		PDF 2SD2114K 2SD2144S 500mA 2SD2114K SC-59 15Min. 100mV 2SD2144S SC-72 T146

    2SD2144S

    Abstract: No abstract text available
    Text: 2SD2114K / 2SD2144S Transistors High-current Gain Medium Power Transistor 20V, 0.5A 2SD2114K / 2SD2144S zExternal dimensions (Units : mm) zFeatures 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO =12V (Min.) 3) Low VCE (sat).


    Original     		PDF 2SD2114K 2SD2144S 500mA 2SD2114K SC-59 15Min. 2SD2144S

    2SD2114K

    Abstract: 2468 912E BF-1 Q2SD2114K
    Text: SPICE PARAMETER 2SD2114K by ROHM TR Div. * 2SD2114K NPN BJT model * Date: 2006/12/06 .MODEL 2SD2114K NPN + IS=1.5000E-12 + BF=1.0520E3 + VAF=36.700 + IKF=3.2468 + ISE=1.5000E-12 + NE=2.3002 + BR=52.730 + VAR=100 + IKR=.37406 + ISC=1.7779E-12 + NC=2.1499


    Original     		PDF 2SD2114K Q2SD2114K 5000E-12 0520E3 7779E-12 912E-12 112E-12 39E-12 2SD2114K 2468 912E BF-1

    Untitled

    Abstract: No abstract text available
    Text: Transistors IC SMD Type Product specification 2SD2114K SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 High emitter-base voltage. 1 0.55 High DC current gain. +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 Features 2 Low VCE sat . +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1


    Original     		PDF 2SD2114K OT-23 500mA/20mA -50mA, 100MHz 100mV

    BBV transistor

    Abstract: 2SD2114 SOT-23 2.D SOT-23-hg VEBO-12V transistor k 820
    Text: 2SD2114 0.5A , 25V NPN Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURE High DC Current Gain. High Emitter-Base Voltage. VEBO=12V Min. A L 3 3 C B Top View CLASSIFICATION OF hFE


    Original     		PDF 2SD2114 OT-23 2SD2114-V 2SD2114-W 500mA, 100MHz 24-Feb-2011 BBV transistor 2SD2114 SOT-23 2.D SOT-23-hg VEBO-12V transistor k 820

    2SD2114K

    Abstract: No abstract text available
    Text: Transistors IC SMD Type Power Transistor 2SD2114K SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 High emitter-base voltage. 1 Low VCE sat . 0.55 High DC current gain. +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1


    Original     		PDF 2SD2114K OT-23 500mA/20mA -50mA, 100MHz 100mV 2SD2114K

    Untitled

    Abstract: No abstract text available
    Text: 2SD2114K Datasheet NPN 500mA 20V Muting Transistors lOutline Parameter Value VCEO IC 20V 500mA SMT3 Collector Base Emitter 2SD2114K SOT-346 SC-59 lFeatures 1) High DC current gain. hFE =2700 (Max.) 2) High emitter-base voltage. VEBO is Min. 12V 3) Low VCE(sat)


    Original     		PDF 2SD2114K 500mA 500mA OT-346 SC-59) 500mA/20mA) R1102A

    BBV transistor

    Abstract: marking BBW marking BBV BBV marking
    Text: 2SD2114 SOT-23 Transistor NPN SOT-23 1. BASE 2.EMITTER 3.COLLECTOR Features — High DC current gain. hFE = 1200 (Typ.) High emitter-base voltage. VEBO =12V (Min.) Low VCE (sat). VCE (sat) = 0.18V (Typ.) (IC/IB=500mA / 20mA) — — MARKING: BBV,BBW MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


    Original     		PDF OT-23 2SD2114 OT-23 500mA 500mA, 100MHz BBV transistor marking BBW marking BBV BBV marking

    TRANSISTOR C107

    Abstract: c107 TRANSISTOR c107 2SD2144S vebo -15 2SD2114K vebo c107 TRANSISTOR equivalent
    Text: Transistors High-current Gain Medium Power Transistor 20V, 0.5A 2SD2114K / 2SD2144S FFeatures 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO = 12V (Min.) 3) Low VCE(sat). VCE(sat) = 0.18V (Typ.) (IC / IB = 500mA / 20mA) FExternal dimensions (Units: mm)


    Original     		PDF 2SD2114K 2SD2144S 500mA 96-232-C107) TRANSISTOR C107 c107 TRANSISTOR c107 2SD2144S vebo -15 vebo c107 TRANSISTOR equivalent

    2SD2103

    Abstract: 2SD2096 TO220FM 2SD2102 2sd209 2SD2109 STC 100u 2SD2091 SC-63 2SD2093
    Text: - 280 - Ta=25^,*EPÍáTc=25'C í± « 2SD2091 2SD2092 2SD2093 2SD2094 2SD2096 2SD2097 2SD2098 2SD2099 2SD2100 2SD2101 2SD2102 2SD2103 2SD2104 2SD2Ì05 2SD2106 2SD2107 2SD2108 2SD2109 2SD2110 2SD2111 2SD2112 2SD2113 2SD2114K 2SD2115L/S 2SD2116 2SD2117 2SD2119


    OCR Scan     		PDF 2SD2091 2SD2092 2SD2093 2SD2094 2SD2096 2SD2097 2SD2098 2SD2099 2SD2112 T0-220FM) 2SD2103 TO220FM 2SD2102 2sd209 2SD2109 STC 100u SC-63 2SD2093

    SL 100 NPN Transistor base emitter collector

    Abstract: SL 100 NPN Transistor BF 273 transistor transistor bf 274 BF 274 transistor 2SD2114 transistor CR NPN
    Text: 2SD2114K Transistor, NPN Features Dimensions Units : mm • available in SMT3 (SMT, SC-59) package • package marking: 2SD2114K; BB-*, where ★ is hFE code |E3 S i 24 Q- • high DC current amplification, typically hFE = 1200 • high emitter-base voltage,


    OCR Scan     		PDF 2SD2114K SC-59) 2SD2114K; 12rves 2SD2114K SL 100 NPN Transistor base emitter collector SL 100 NPN Transistor BF 273 transistor transistor bf 274 BF 274 transistor 2SD2114 transistor CR NPN

    7826 Transistor

    Abstract: marking code Sk transistors
    Text: 2SD2114K Transistor, NPN Features dimensions Units : mm • available in SMT3 (SMT, SC-59) package • package marking: 2SD2114K; BB-*, where ★ is hFE code • high DC current amplification, typically hFE = 1200 • high emitter-base voltage, VEBO = 12V(min)


    OCR Scan     		PDF 2SD2114K SC-59) 2SD2114K; 2SD2114K 7826 Transistor marking code Sk transistors

    TRANSISTOR C107

    Abstract: transistor c107 m c107 transistor 2144S 2SD2144S 96-232-C107 IC-2700
    Text: I High-current gain Medium Power Transistor 20V, 0.5A 2SD2114K/2SD2144S •E xternal dimensions (Units: mm) •F eatures 1) High DC current gain. hFE = 1200 (Typ) 2) 2.9±0.2 1.1 High emitter-base voltage, Vebo = 12V 3) 2SD2114K +0.2 - 0.1 0.8± 0.1 (Min.)


    OCR Scan     		PDF 2SD2114K 2SD2114K/2SD2144S 500mA/20A) SC-59 2SD2144S SC-72 TRANSISTOR C107 transistor c107 m c107 transistor 2144S 2SD2144S 96-232-C107 IC-2700

    Untitled

    Abstract: No abstract text available
    Text: Transistors High-current gain Medium Power Transistor 20V, 0.5A 2SD2114K/2SD2144S •Features 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. V ebo = 1 2 V (Min.) 3) ^External dimensions (Units: mm) 2SD2114K 2.9±0.2 11 11-+ 00.1


    OCR Scan     		PDF 2SD2114K/2SD2144S 2SD2114K 500mA/20A) SC-59 2SD2144S Emit100 100mV

    Untitled

    Abstract: No abstract text available
    Text: Transistor, dual, NPN IMX9 Dimensions Units : mm Features • available in SMT6 (IMD, SC-74) package • package marking: X9 • package contains two independent NPN transistors (2SD2114K) • same size as SMT3 (SMT, SC-59), so same placement machine can be


    OCR Scan     		PDF SC-74) 2SD2114K) SC-59)