Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    MARKING BAQ Search Results

    MARKING BAQ Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG8097/B Rochester Electronics LLC 8097 - Math Coprocessor - Dual marked (8506301ZA) Visit Rochester Electronics LLC Buy
    5490/BCA Rochester Electronics LLC 5490 - Decade Counter - Dual marked (M38510/01307BCA) Visit Rochester Electronics LLC Buy
    5405/BCA Rochester Electronics LLC 5405 - Gate - Dual marked (M38510/00108BCA) Visit Rochester Electronics LLC Buy
    54AC20/SDA-R Rochester Electronics LLC 54AC20/SDA-R - Dual marked (M38510R75003SDA) Visit Rochester Electronics LLC Buy
    UHD503R/883 Rochester Electronics LLC UHD503R/883 - Dual marked (5962-8855101CA) Visit Rochester Electronics LLC Buy

    MARKING BAQ Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    BY228ph

    Abstract: BYV26E PH 1N5062 ph BY228 PH 1N4007 sod87 za109ts BYW95C PH BYR245 sj 1a0 SOD87 1N4007
    Text: DISCRETE SEMICONDUCTORS Marking codes Power Diodes Supersedes data of 2004 Apr 27 2004 Jun 11 Philips Semiconductors Product specification Power Diodes Marking codes TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE PACKAGE TYPE NUMBER MARKING CODE PACKAGE


    Original
    1N4001G 1N4001 BY8106 OD61AD 1N4002G 1N4002 BY8108 OD61AE 1N4003G 1N4003 BY228ph BYV26E PH 1N5062 ph BY228 PH 1N4007 sod87 za109ts BYW95C PH BYR245 sj 1a0 SOD87 1N4007 PDF

    PH 33D

    Abstract: PH 33G BYW95C PH BYM26C PH BYV26E PH BYW96E PH BYV96E ph 33D-PH 33d ph V10-40
    Text: DISCRETE SEMICONDUCTORS Marking codes Power Diodes 1998 Dec 07 Philips Semiconductors Power Diodes Marking codes TYPE NUMBER TO MARKING CODE MARKING CODE PACKAGE BY558 BY558 PH SOD115 SOD57 BY578 BY578 PH SOD115 SOD57 BY584 orange SOD61A 1N4004 PH SOD57 BY614


    Original
    BY558 BY558 OD115 BY578 BY578 BY584 OD61A 1N4004 BY614 PH 33D PH 33G BYW95C PH BYM26C PH BYV26E PH BYW96E PH BYV96E ph 33D-PH 33d ph V10-40 PDF

    smd k72 y5

    Abstract: K72 y8 k72 y4 BAS70WT 46A gez SMBJ8.5CA SMBJ11CA SMD Marking K72 sk 75 dgm marking f5 sot-89
    Text: Micro Commercial Components Corp. Marking Code For MCC's SMD Devices 1N4148W 1N4148WX 1N4148X 1N4448W 1N4448WX 1N4448X 1N914W 1SS181 1SS184 1SS193 1SS226 1SS355 1SS357 1SS389 1SS400 1SS404 2N7002 2N7002DW 2N7002T 2N7002W 2SA1037-Q 2SA1037-R 2SA1037-S 2SA1162-GR


    Original
    1N4148W 1N4148WX 1N4148X 1N4448W 1N4448WX 1N4448X 1N914W 1SS181 1SS184 1SS193 smd k72 y5 K72 y8 k72 y4 BAS70WT 46A gez SMBJ8.5CA SMBJ11CA SMD Marking K72 sk 75 dgm marking f5 sot-89 PDF

    smd j3y

    Abstract: SOT89 MARKING CODE SMD MARKING CODE j3y SOT-23 J3Y j3y smd smd code marking wl sot23 k72 sot-23 marking f5 sot-89 smd 2TY SOT-23 MARKING ka6
    Text: Micro Commercial Components Corp. Marking Code For MCC's SMD Devices PN# 1N4148W 1N4148WX 1N4148X 1N4448W 1N4448WX 1N4448X 1N914W 1SS181 1SS184 1SS193 1SS226 1SS355 1SS357 1SS389 1SS400 1SS404 2N7002 2N7002DW 2SA1037-Q 2SA1037-R 2SA1037-S 2SA1162-GR 2SA1162-O


    Original
    1N4148W 1N4148WX 1N4148X 1N4448W 1N4448WX 1N4448X 1N914W 1SS181 1SS184 1SS193 smd j3y SOT89 MARKING CODE SMD MARKING CODE j3y SOT-23 J3Y j3y smd smd code marking wl sot23 k72 sot-23 marking f5 sot-89 smd 2TY SOT-23 MARKING ka6 PDF

    MINI-MELF DIODE markings

    Abstract: No abstract text available
    Text: BAQ33, BAQ34, BAQ35 www.vishay.com Vishay Semiconductors Small Signal Switching Diodes, Low Leakage Current FEATURES • Silicon planar diodes • Very low reverse current • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912


    Original
    BAQ33, BAQ34, BAQ35 OD-80 GS18/10K 10K/box 10K/box BAQ33 BAQ34 MINI-MELF DIODE markings PDF

    Untitled

    Abstract: No abstract text available
    Text: BAQ33, BAQ34, BAQ35 www.vishay.com Vishay Semiconductors Small Signal Switching Diodes, Low Leakage Current FEATURES • Silicon planar diodes • Very low reverse current • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912


    Original
    BAQ33, BAQ34, BAQ35 OD-80 GS18/10K 10K/box BAQ33 BAQ33-GS18 PDF

    Untitled

    Abstract: No abstract text available
    Text: BAQ133, BAQ134, BAQ135 www.vishay.com Vishay Semiconductors Small Signal Switching Diodes, Low Leakage Current FEATURES • Silicon planar diodes • Very low reverse current • Material categorization: For definitions of compliance www.vishay.com/doc?99912


    Original
    BAQ133, BAQ134, BAQ135 OD-80 GS18/10K 10K/box GS08/2 BAQ133 2002/95/EC. 2002/95/EC PDF

    Untitled

    Abstract: No abstract text available
    Text: BAQ133, BAQ134, BAQ135 www.vishay.com Vishay Semiconductors Small Signal Switching Diodes, Low Leakage Current FEATURES • Silicon planar diodes • Very low reverse current • Material categorization: For definitions of compliance www.vishay.com/doc?99912


    Original
    BAQ133, BAQ134, BAQ135 OD-80 GS18/10K 10K/box GS08/2 BAQ133 2011/65/EU 2002/95/EC. PDF

    Untitled

    Abstract: No abstract text available
    Text: BAQ133, BAQ134, BAQ135 www.vishay.com Vishay Semiconductors Small Signal Switching Diodes, Low Leakage Current FEATURES • Silicon planar diodes • Very low reverse current • Material categorization: For definitions of compliance www.vishay.com/doc?99912


    Original
    BAQ133, BAQ134, BAQ135 OD-80 GS18/10K 10K/box GS08/2 BAQ133 BAQ134 BAQ135 PDF

    BAQ806

    Abstract: diode 1407 diode 104
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D168 BAQ806 AM PIN diode Product specification File under Discrete Semiconductors, SC10 1998 Aug 03 Philips Semiconductors Product specification AM PIN diode BAQ806 FEATURES DESCRIPTION • Glass passivated


    Original
    M3D168 BAQ806 DO-214AC SCA60 115104/00/01/pp12 BAQ806 diode 1407 diode 104 PDF

    Philips diode

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D119 BAQ800 AM PIN diode Product specification File under Discrete Semiconductors, SC01 1997 Aug 26 Philips Semiconductors Product specification AM PIN diode BAQ800 FEATURES DESCRIPTION • Glass passivated


    Original
    M3D119 BAQ800 MAM123 frequenci31 SCA55 117027/1200/01/pp12 Philips diode PDF

    bq 8050

    Abstract: HF S4 13003 F6 13003 bL78L05 HF 13003 bq d882 2SC945 KJG BAV99 WG 13003 2SC945 AQ
    Text: 目 录 CONTENTS Page 产品索引(按字母顺序) ALPHANUMERIC INDEX A 产品目录表(按电性能) TABLE OF CONTENTS G 小信号开关二极管 Small Signal Switching Diodes G 小信号肖特基二极管 Small Signal Schottky Diodes H 双极型晶体管


    Original
    OD-123 OD-123 OD-323 OD-323 OD-523 OD-523 OT-23 OT-23 OT-323 OT-323 bq 8050 HF S4 13003 F6 13003 bL78L05 HF 13003 bq d882 2SC945 KJG BAV99 WG 13003 2SC945 AQ PDF

    marking code VV transistors

    Abstract: No abstract text available
    Text: WILLAS FM120-M+ 2SB1132THRU FM1200-M+ SOT-89 Plastic-Encapsulate Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features TRANSISTOR PNP design, excellent power dissipation offers • Batch process


    Original
    OT-89 OD-123+ 060TYP M180-MH FM1100-MH FM1150-MH FM1200-MH FM120-MH FM130-MH FM140-MH marking code VV transistors PDF

    Transistor S8550 2TY

    Abstract: Schottky barrier sot-23 Marking s4 sk 8050s KL4 SOT-23 d882 to-92 BR S8050 bq d882 transistor D882 datasheet S8050 equivalent PCR100-6
    Text: DIODES IN SOD-123 1N4148W 1N4448W 1N5711W* 1N6263W* B0520LW B0530W B0540W B5817W B5818W B5819W BAT42W BAT43W BAT46W* BAV16W BAV19W BAV20W BAV21W SD101AW* SD101BW* SD101CW* SD103AW SD103BW SD103CW PD VR V IFM(mA) IR( A) (mW) 350 75 350 75 250


    Original
    OD-123 1N4148W 1N4448W 1N5711W* 1N6263W* B0520LW B0530W B0540W B5817W B5818W Transistor S8550 2TY Schottky barrier sot-23 Marking s4 sk 8050s KL4 SOT-23 d882 to-92 BR S8050 bq d882 transistor D882 datasheet S8050 equivalent PCR100-6 PDF

    ph 4148 zener diode

    Abstract: ka6 transistor smd Marking Code SMD databook melf diodes color code 4148 TRANSISTOR SMD MARKING CODE w2 GLUE IR-130 smd diode sod-323 marking code L2 smd diode marking 5d SOD-323 SOD-123 a2 4148 TRANSISTOR SMD MARKING CODE 352
    Text: VISHAY INTERTECHNO L O G Y , INC . INTERACTIVE data book small signal diodes vishay semiconductors vHN-db1102-0407 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents


    Original
    vHN-db1102-0407 ph 4148 zener diode ka6 transistor smd Marking Code SMD databook melf diodes color code 4148 TRANSISTOR SMD MARKING CODE w2 GLUE IR-130 smd diode sod-323 marking code L2 smd diode marking 5d SOD-323 SOD-123 a2 4148 TRANSISTOR SMD MARKING CODE 352 PDF

    MMS8050-L

    Abstract: 2SB1073R Bd882 2SD667C 2SD667AC 2SD669AC sot23-3 marking 63 zt5551 2SD468C marking 2sd1664
    Text: TM Micro Commercial Components SMALL SIGNAL&POWER TRANSISTORS MCC Part Number VCEO V IC (A) hFE @ VCE & IC VCE(sat) & VBE(sat) @ IC & IB hFE hFE VCE IC Min. Max. (V) (mA) VCE(sat) VBE(sat) Max.(V) Max.(V) fT @ VCE & IC Polarity IC IB fT Min. TPY. fT Max.


    Original
    MJD31C MJD32C MJD42C MMJD2955 MMJD3055 MMS8050-L 2SB1073R Bd882 2SD667C 2SD667AC 2SD669AC sot23-3 marking 63 zt5551 2SD468C marking 2sd1664 PDF

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • 2SB1132 PNP Plastic-Encapsulate Transistors Power dissipation: PCM = 0.5W Tamb=25℃


    Original
    2SB1132 OT-89 PDF

    Untitled

    Abstract: No abstract text available
    Text: SOT-89 Plastic-Encapsulate Transistors 2SB1132 SOT-89 TRANSISTOR PNP 1. BASE FEATURES Power dissipation 2. COLLECTOR PCM: 0.5 W (Tamb=25℃) 1 2 3. EMITTER Collector current -1 A ICM: Collector-base voltage V V(BR)CBO: -40 Operating and storage junction temperature range


    Original
    OT-89 2SB1132 OT-89 -100mA -500mA, -50mA -50mA, 30MHz PDF

    2SB1132

    Abstract: bAr sot-89 marking BAR sot89 marking BAR sot-89
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors 2SB1132 SOT-89 TRANSISTOR PNP 1. BASE FEATURES Power dissipation 2. COLLECTOR PCM: 0.5 W (Tamb=25℃) 1 2 3. EMITTER Collector current -1 A ICM: Collector-base voltage


    Original
    OT-89 2SB1132 OT-89 -100mA -500mA, -50mA -50mA, 30MHz 2SB1132 bAr sot-89 marking BAR sot89 marking BAR sot-89 PDF

    diac kr 206

    Abstract: BAS70WT SMBJ11CA FR107 SOD-123 db1 diac EX 0045 bm diode zener 10A06 sources 812 6V8A Zener Diode pev LF marking PL 15Z DIODE
    Text: PRODUCT CATALOG 2015 MCC TM Micro Commercial Components COMPLETE DISCRETE SEMICONDUCTORS SOLUTIONS POWERED BY SERVICE MCCSEMI.COM MCC TM Micro Commercial Components TM Where to Buy Micro Commercial Components www.arrownac.com www.digikey.com www.futureelectronics.com


    Original
    element14 diac kr 206 BAS70WT SMBJ11CA FR107 SOD-123 db1 diac EX 0045 bm diode zener 10A06 sources 812 6V8A Zener Diode pev LF marking PL 15Z DIODE PDF

    2SB1132

    Abstract: transistor marking BAR marking BAR sot-89
    Text: Transys Electronics L I M I T E D SOT-89 Plastic-Encapsulated Transistors 2SB1132 SOT-89 TRANSISTOR PNP 1. BASE FEATURES Power dissipation 2. COLLECTOR PCM: 0.5 W (Tamb=25℃) 1 2 3. EMITTER Collector current -1 A ICM: Collector-base voltage V V(BR)CBO: -40


    Original
    OT-89 2SB1132 OT-89 -100mA -500mA, -50mA -50mA, 30MHz 2SB1132 transistor marking BAR marking BAR sot-89 PDF

    transistor marking BAR

    Abstract: 2SB1132 MARKING BAQ
    Text: 2SB1132 2SB1132 SOT-89 TRANSISTOR PNP 1. BASE FEATURES Power dissipation 2. COLLECTOR PCM: 0.5 W (Tamb=25℃) 1 2 3. EMITTER Collector current ICM: -1 A Collector-base voltage V V(BR)CBO: -40 Operating and storage junction temperature range 3 TJ, Tstg: -55℃ to +150℃


    Original
    2SB1132 OT-89 -100mA -500mA, -50mA -50mA, 30MHz transistor marking BAR 2SB1132 MARKING BAQ PDF

    TPT5609

    Abstract: SS8550 sot-23 Y2 sot-23 npn marking code cr SS8050 sot-89 Y1 6B sot 363 2N3904 SOT-23 MARKING CODE S9018 j6 sot-23 Marking 2TY SOT 363 marking CODE 2H MJE13003 2A
    Text: MCC TM Micro Commercial Components SMALL SIGNAL &POWER TRANSISTORS VCEO Part No hFE @ VCE & IC IC Polarity VCE sat & VBE(sat) @ IC & IB fT @ VCE & IC VCE IC VCE(sat) VBE(sat) IC IB fT Min. fT Max. VCE IC hFE hFE Max. (V) (mA) Max.(V) Max.(V) (mA) (mA) (MHz)


    Original
    2N3904 2N3906 2N4124 2N4400 2N4401 2N4402 2N4403 2N5401 2N5551 2N6517 TPT5609 SS8550 sot-23 Y2 sot-23 npn marking code cr SS8050 sot-89 Y1 6B sot 363 2N3904 SOT-23 MARKING CODE S9018 j6 sot-23 Marking 2TY SOT 363 marking CODE 2H MJE13003 2A PDF

    2SB1132

    Abstract: 2SD1664
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors 2SB1132 SOT-89 TRANSISTOR PNP 1. BASE FEATURES z Low VCE(sat): -0.2V(Typ) IC/IB=-500mA/-50mA z Compliments 2SD1664 2. COLLECTOR 1 2 3. EMITTER 3 MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


    Original
    OT-89 2SB1132 OT-89 -500mA/-50mA 2SD1664 -100mA -500mA -50mA -50mA 30MHz 2SB1132 2SD1664 PDF