AP2924
Abstract: C166 C167 C167CR C167CR-16RM C167CR-LM SAK-C167CR-16RM
Text: Microcontroller Components Errata Sheet September 28, 1998 / Release 1.2 Device: SAK-C167CR-16RM Stepping Code / Marking: ES-AA, AA Package: MQFP-144 This Errata Sheet describes the deviations from the current user documentation. The classification and numbering system is module oriented in a continual ascending sequence
|
Original
|
PDF
|
SAK-C167CR-16RM
MQFP-144
C167CR
C167CR-LM)
C167CR-16RM.
C167CR-16RM,
AP2924
C166
C167
C167CR-16RM
C167CR-LM
SAK-C167CR-16RM
|
C166
Abstract: C167 C167CR C167CR-16RM C167CR-LM SAK-C167CR-16RM C167 instruction set
Text: Microcomputer Components Technical Support Group Munich HL DC AT Errata Sheet December 23, 1997 / Release 1.1 Device : Stepping Code / Marking : SAK-C167CR-16RM ES-AA, AA The C167CR-16RM is the 128 Kbyte ROM version of the C167CR, including an on-chip CAN module, 2 Kbyte XRAM module, and a PLL oscillator circuit.
|
Original
|
PDF
|
SAK-C167CR-16RM
C167CR-16RM
C167CR,
144-pin
C167CR-LM)
C167CR-16RM.
C167CR-16RM,
C166
C167
C167CR
C167CR-LM
SAK-C167CR-16RM
C167 instruction set
|
AP2420
Abstract: 1302h C166 I2C PEC single byte software 1303H AP2424 C161PI C167 SAB-C161PI-LF SAB-C161PI-LM SAF-C161PI-LF
Text: Microcontroller Components Errata Sheet July 6, 2001 / Release 1.4 Device: SAB-C161PI-LM, SAF-C161PI-LM, SAB-C161PI-LM3V SAB-C161PI-LF, SAF-C161PI-LF SAB-C161PI-LF3V Stepping Code / Marking: Package: ES-AA, AA ES-BA-H, BA-H P-MQFP-100-2, P-TQFP-100-1 This Errata Sheet describes the deviations from the current user documentation. The
|
Original
|
PDF
|
SAB-C161PI-LM,
SAF-C161PI-LM,
SAB-C161PI-LM3V
SAB-C161PI-LF,
SAF-C161PI-LF
SAB-C161PI-LF3V
P-MQFP-100-2,
P-TQFP-100-1
C161PI
AP2420
1302h
C166 I2C PEC single byte software
1303H
AP2424
C167
SAB-C161PI-LF
SAB-C161PI-LM
SAF-C161PI-LF
|
marking AA DIODE SOD 923
Abstract: bas40sl diode smd marking AA 25 FAIRCHILD DIODE fairchild 923
Text: BAS40SL Schottky Barrier Diodes Features • • • • Low Forward Voltage Drop Fast switching Very Small and Thin SMD package Profile height, 0.43mm max • Footprint, 1.0 x 0.6 mm Connection Diagram 1 2 2 SOD-923 Marking: AA Absolute Maximum Ratings *
|
Original
|
PDF
|
BAS40SL
BAS40SL
OD-923
marking AA DIODE SOD 923
diode smd marking AA 25
FAIRCHILD DIODE
fairchild 923
|
Untitled
Abstract: No abstract text available
Text: BAS40SL Schottky Barrier Diodes Features • • • • Low Forward Voltage Drop Fast switching Very Small and Thin SMD package Profile height, 0.43mm max • Footprint, 1.0 x 0.6mm Connection Diagram 1 2 2 SOD-923F Marking: AA Absolute Maximum Ratings *
|
Original
|
PDF
|
BAS40SL
OD-923F
|
FAIRCHILD SMD MARKING
Abstract: BAS40SL FAIRCHILD DIODE marking aa
Text: BAS40SL Schottky Barrier Diodes Features • • • • Low Forward Voltage Drop Fast switching Very Small and Thin SMD package Profile height, 0.43mm max • Footprint, 1.0 x 0.6mm Connection Diagram 1 2 2 SOD-923F Marking: AA Absolute Maximum Ratings *
|
Original
|
PDF
|
BAS40SL
OD-923F
FAIRCHILD SMD MARKING
BAS40SL
FAIRCHILD DIODE
marking aa
|
SAB-C161K-L16M
Abstract: C161K-L16M C166 JMPR
Text: Microcontroller Components Errata Sheet October 2, 1998 / Release 1.1 Device: Stepping Code / Marking: Package: SAB-C161K-L16M AA MQFP-80 This Errata Sheet describes the deviations from the current user documentation. The classification and numbering system is module oriented in a continual ascending sequence
|
Original
|
PDF
|
SAB-C161K-L16M
MQFP-80
C161V/C161K/C161O
2TCL-20ns
-10ns
C161K-L16M,
SAB-C161K-L16M
C161K-L16M
C166
JMPR
|
C161O-L16M
Abstract: C166 SAB-C161O-L16M TCL SERVICE MANUAL
Text: Microcontroller Components Errata Sheet October 2, 1998 / Release 1.1 Device: Stepping Code / Marking: Package: SAB-C161O-L16M AA MQFP-80 This Errata Sheet describes the deviations from the current user documentation. The classification and numbering system is module oriented in a continual ascending sequence
|
Original
|
PDF
|
SAB-C161O-L16M
MQFP-80
C161V/C161K/C161O
2TCL-20ns
-10ns
C161O-L16M,
C161O-L16M
C166
SAB-C161O-L16M
TCL SERVICE MANUAL
|
C161V-L16M
Abstract: C166 SAB-C161V-L16M JMPR
Text: Microcontroller Components Errata Sheet October 2, 1998 / Release 1.1 Device: Stepping Code / Marking: Package: SAB-C161V-L16M AA MQFP-80 This Errata Sheet describes the deviations from the current user documentation. The classification and numbering system is module oriented in a continual ascending sequence
|
Original
|
PDF
|
SAB-C161V-L16M
MQFP-80
C161V/C161K/C161O
2TCL-20ns
C161V-L16M,
C161V-L16M
C166
SAB-C161V-L16M
JMPR
|
SAK-C167S-4RM
Abstract: SAB-C167S-4RM C167 C167CR-LM C167S C167S-4RM
Text: Microcomputer Components Technical Support Group Munich HL DC AT Errata Sheet November 28, 1997 / Release 1.0 Device : Stepping Code / Marking : SAB-C167S-4RM, SAK-C167S-4RM AA The C167S-4RM is a version of the C167 with 32 Kbyte on-chip ROM and a PLL oscillator circuit.
|
Original
|
PDF
|
SAB-C167S-4RM,
SAK-C167S-4RM
C167S-4RM
C167S,
144-pin
P-MQFP-144-1)
C167S
C167xx
C167S-4RM,
SAK-C167S-4RM
SAB-C167S-4RM
C167
C167CR-LM
C167S
|
SAB-C161PI-LM
Abstract: C161PI C167 SAB-C161PI-LF SAF-C161PI-LF SAF-C161PI-LM 1301H ap2420
Text: Microcontroller Components Errata Sheet February 17, 2000 / Release 1.3 Device: SAB-C161PI-LM, SAF-C161PI-LM SAB-C161PI-LF, SAF-C161PI-LF Stepping Code / Marking: Package: ES-AA P-MQFP-100-2, P-TQFP-100-1 This Errata Sheet describes the deviations from the current user documentation. The
|
Original
|
PDF
|
SAB-C161PI-LM,
SAF-C161PI-LM
SAB-C161PI-LF,
SAF-C161PI-LF
P-MQFP-100-2,
P-TQFP-100-1
C161PI
C161RI
C161PI:
SAB-C161PI-LM
C167
SAB-C161PI-LF
SAF-C161PI-LF
SAF-C161PI-LM
1301H
ap2420
|
gaas fet marking B
Abstract: gaas fet micro-X Package marking gaas fet marking a marking K gaas fet MGF1961A gaas fet micro-X Package gaas fet marking J MGF1964A MGF1963A Micro-X marking "K"
Text: Marking manner of MITSUBISHI GaAs FET QL-1104E-A July/2008 [Leadless ceramic package] GD-26, 27 Terminal position (from Top View) Top View ① ② B 0 1AL B 0 1AL Electrodes direction: ① Gate ② Source ③ Drain ② ③ ① ② ③ Drain Gate Source
|
Original
|
PDF
|
QL-1104E-A
July/2008)
GD-26,
MGF4951A/52A
MGF4953A/54A
MGF1951A
MGF1952A
MGF1953A
MGF1954A
MGF4851A
gaas fet marking B
gaas fet micro-X Package marking
gaas fet marking a
marking K gaas fet
MGF1961A
gaas fet micro-X Package
gaas fet marking J
MGF1964A
MGF1963A
Micro-X marking "K"
|
VN3205N6
Abstract: diode marking CODE VN G1 vn2lw VN3205 SOT89 MARKING CODE 43 diode marking CODE VN S2
Text: VN3205 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► These enhancement-mode normally-off transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination
|
Original
|
PDF
|
VN3205
MS-001,
DSFP-VN3205
A071607
VN3205N6
diode marking CODE VN G1
vn2lw
SOT89 MARKING CODE 43
diode marking CODE VN S2
|
TO-243AA
Abstract: diode marking CODE VN G1 s4 marking code siemens VN3205N8-G
Text: VN3205 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with
|
Original
|
PDF
|
VN3205
MS-001,
DSFP-VN3205
B020608
TO-243AA
diode marking CODE VN G1
s4 marking code siemens
VN3205N8-G
|
|
|
DIODE S4 08
Abstract: vn3205p-g VN3205N8-G diode sot-89 marking code S1
Text: VN3205 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► These enhancement-mode normally-off transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with
|
Original
|
PDF
|
VN3205
MS-001,
DSFP-VN3205
A101507
DIODE S4 08
vn3205p-g
VN3205N8-G
diode sot-89 marking code S1
|
marking 3A sot-89
Abstract: 3V02 SIVN3205 VN3205
Text: VN3205 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with
|
Original
|
PDF
|
VN3205
DSFP-VN3205
B022109
marking 3A sot-89
3V02
SIVN3205
|
b0915
Abstract: VN3205
Text: VN3205 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with
|
Original
|
PDF
|
VN3205
DSFP-VN3205
B091508
b0915
|
DN2625
Abstract: 125OC DN2625K4-G DN2625K6-G DSFP-DN2625 ultrasound piezoelectric array
Text: DN2625 N-Channel Depletion-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► The Supertex DN2625 is a low threshold depletion-mode normally-on transistor utilizing an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate
|
Original
|
PDF
|
DN2625
DN2625
DSFP-DN2625
NR070307
125OC
DN2625K4-G
DN2625K6-G
DSFP-DN2625
ultrasound piezoelectric array
|
sivn
Abstract: vn2lw VN3205N8-G seimens vn3205 125OC VN3205N3-G VN3205ND DMOS B0521
Text: VN3205 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with
|
Original
|
PDF
|
VN3205
DSFP-VN3205
B052109
sivn
vn2lw
VN3205N8-G
seimens
vn3205
125OC
VN3205N3-G
VN3205ND
DMOS
B0521
|
a7840
Abstract: fdfs6n303
Text: FDFS6N303 FETKEY N-Channel MOSFET with Schottky Diode General Description Features Fairchild Semiconductors FETKEY technology combines high cell density MOSFET and low forward drop 0.35V Schottky diode into a single surface mount power package. The MOSFET and
|
Original
|
PDF
|
FDFS6N303
a7840
fdfs6n303
|
Untitled
Abstract: No abstract text available
Text: FDG314P Digital FET, P-Channel General Description Features This P-Channel enhancement mode field effect transistor is produced using Fairchild Semiconductors proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize onstate resistance at low gate drive conditions. This
|
Original
|
PDF
|
FDG314P
|
mrf9382
Abstract: MRF9382T1
Text: Order this document BY MRF9382T1PP/D MRF9382T1 Product Preview Silicon Lateral FET, N-Channel Enhancement-Mode MOSFET Designed for use in low voltage, moderate power amplifiers such as portable analog and digital cellular radios and PC RF modems. • Performance Specifications at 900 MHz:
|
Original
|
PDF
|
MRF9382T1PP/D
MRF9382T1
MRF9382T1PP/D
mrf9382
MRF9382T1
|
Q62702-F1394
Abstract: No abstract text available
Text: Infineon faîhnoîogte» G aA s FET CFY 3 5 Data Sheet • • Low noise High gain • For low-noise front end amplifiers • For DBS down converters ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code tape and reel
|
OCR Scan
|
PDF
|
Q62702-F1393
Q62702-F1394
Q62702-F1394
|
.a h marking
Abstract: marking A S220M
Text: OTHER PRODUCTS G aA s f ie ld e f f e c t t r a n s is t o r s POWER FET'S m t t f ì n t a in E U c fy c n ta XMFP Series FEATURES • High power output ■ Excellent linear power gain APPLICATIONS ■ C-band power amps up to 6G H z ■ W ireless telecommunication base stations G SM , DCS,
|
OCR Scan
|
PDF
|
26dBm
30dBm
35dBm
0-35-E,
.a h marking
marking A
S220M
|
