KF7N65
Abstract: KF7N65F 7N65 kf7n TO220IS TO-220IS
Text: SEMICONDUCTOR KF7N65F MARKING SPECIFICATION TO-220IS PACKAGE 1. Marking method Laser Marking 2. Marking No. Item 1 KF7N65 2 F 801 3 Marking Description KF KEC Fresh FET 7N65 7N65 Package & Version F TO-220IS Lot No. 801 Device Name 2008. 6. 16 Revision No : 0
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KF7N65F
O-220IS
KF7N65
O-220IS
KF7N65
KF7N65F
7N65
kf7n
TO220IS
TO-220IS
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 7N65K Power MOSFET 7.4A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N65K is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high
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7N65K
7N65K
QW-R502-770.
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 7N65-M Power MOSFET 7.4A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N65-M is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged
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7N65-M
7N65-M
7N65L-TA3-T
7N65G-TA3-T
O-220
QW-R502-A28
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 7N60K Power MOSFET 7.4A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N60K is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged
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7N60K
7N60K
QW-R502-776
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 7N60 Power MOSFET 7.4A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged
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7N60L-TA3-T
7N60G-TA3-T
7N60L-TF3-T
7N60G-TF3-T
7N60L-TFt
QW-R502-076.
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7N65G
Abstract: 7N65L
Text: UNISONIC TECHNOLOGIES CO., LTD 7N65 Power MOSFET 7.4A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N65 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged
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7N65L-TA3-T
7N65G-TA3-T
7N65L-TF3-T
7N65G-TF3-T
7N65L-TFat
QW-R502-104
7N65G
7N65L
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 7N60 Power MOSFET 7.4A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged
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7N60L-TA3-T
7N60G-TA3-T
7N60L-TF3-T
7N60G-TF3-T
7N60L-TFt
QW-R502-076.
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 7N60K-MTQ Preliminary Power MOSFET 6.2A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N60K-MTQ is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high
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7N60K-MTQ
7N60K-MTQ
7N60KL-TA3-T
QW-R205-025
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 7N65-M Power MOSFET 7.4A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N65-M is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged
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7N65-M
7N65-M
7N65L-TA3-T
7N65G-TA3-T
O-220
QW-R502-A28
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 7N65K-MTQ Power MOSFET 7A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N65K-MTQ is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged
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7N65K-MTQ
7N65K-MTQ
7N65KL-TA3-T
7N65KG-TA3-T
O-220
7N65Kat
QW-R205-020
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37n60
Abstract: 7n60 fairchild fairchild 7n60 FCU7N60TU FCD7N60
Text: SuperFET TM FCD7N60 / FCU7N60 600V N-Channel MOSFET Features Description • 650V @TJ = 150°C SuperFETTM is, Farichild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and
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FCD7N60/FCU7N60
FCD7N60
FCU7N60
FCU7N60
FCU7N60TU
37n60
7n60 fairchild
fairchild 7n60
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7N65C
Abstract: FQB7N65C fqb*7N65C FQB7N65CTM
Text: QFET FQB7N65C 650V N-Channel MOSFET Features Description • • • • • • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to
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FQB7N65C
FQB7N65C
FQB7N65CTM
7N65C
fqb*7N65C
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ge tube company
Abstract: No abstract text available
Text: FGPF7N60LSD 600V, 7A Low Saturation IGBT CO-PAK Features Description • Low saturation voltage : VCE sat = 1.4 V @ IC = 7A Fairchild's Insulated Gate Bipolar Transistors (IGBTs) provides very low conduction and switching losses.The device is designed for Lamp applications where very low On-Voltage
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FGPF7N60LSD
FGPF7N60LSD
O-220F
FGPF7N60LSDTU
ge tube company
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Marking 7n6 Mosfet
Abstract: marking 7n6 7n6 diode zxmn6a07f
Text: ZXMN6A07F 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features V BR DSS Max RDS(on) 60V 250mΩ@ VGS= 10V 350mΩ @ VGS= 4.5V Max ID TA = 25°C (Note 7) 1.4A 1.2A Description This MOSFET utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed, making it ideal for
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ZXMN6A07F
AEC-Q101
DS33547
Marking 7n6 Mosfet
marking 7n6
7n6 diode
zxmn6a07f
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7N60
Abstract: e-bike CYStech Electronics
Text: CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET MTN7N60FP Spec. No. : C409FP Issued Date : 2008.09.02 Revised Date : 2009.04.20 Page No. : 1/9 BVDSS : 650V @Tj=150℃ RDS ON : 1.2Ω ID : 7A Description The MTN7N60FP is a N-channel enhancement-mode MOSFET, providing the designer with the best
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MTN7N60FP
C409FP
MTN7N60FP
O-220FP
UL94V-0
7N60
e-bike
CYStech Electronics
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Marking 7n6 Mosfet
Abstract: 7n6 diode marking 7n6 ZXMN6A07F ZXMN6A07FQTA tr/transistor 7n6
Text: A Product Line of Diodes Incorporated ZXMN6A07F 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features V BR DSS Max RDS(on) 60V 250mΩ @ VGS= 10V 350mΩ @ VGS= 4.5V Max ID TA = 25°C (Note 7) 1.4A 1.2A Description This MOSFET utilizes a unique structure that combines the benefits
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ZXMN6A07F
AEC-Q101
DS33547
Marking 7n6 Mosfet
7n6 diode
marking 7n6
ZXMN6A07F
ZXMN6A07FQTA
tr/transistor 7n6
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Untitled
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated AP3107Z HIGH VOLTAGE GREEN MODE PWM CONTROLLER Description Pin Assignments The AP3107Z is the high voltage start-up, current mode PWM controller with green mode power-saving operation. To minimize the standby power consumption, a proprietary adaptive
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AP3107Z
AP3107Z
26kHz.
DS36677
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7n6 TRANSISTOR
Abstract: Marking 7n6 TRANSISTOR transistor 7n6 07n60 Marking 7n6 Mosfet 7n6 diode H07N60 H07N60E H07N60F marking code PB
Text: HI-SINCERITY Spec. No. : MOS200604 Issued Date : 2006.02.01 Revised Date : 2006.02.07 Page No. : 1/5 MICROELECTRONICS CORP. H07N60 Series H07N60 Series Pin Assignment Tab N-Channel Power Field Effect Transistor 3-Lead Plastic TO-220AB Package Code: E Pin 1: Gate
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MOS200604
H07N60
O-220AB
183oC
217oC
260oC
10sec
H07N60E,
7n6 TRANSISTOR
Marking 7n6 TRANSISTOR
transistor 7n6
07n60
Marking 7n6 Mosfet
7n6 diode
H07N60E
H07N60F
marking code PB
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3101M
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated AP3101 GREEN MODE PWM CONTROLLER Description Pin Assignments The AP3101 is a green PWM controller operating in current mode. It is specifically designed for off-line AC-DC adapter and battery charger applications where the needs for low standby power and better
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AP3101
AP3101
DS37418
3101M
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Untitled
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated AP3102/V/L GREEN MODE PWM CONTROLLER NEW PRODUCT Description Pin Assignments The AP3102/V/L series is a green-mode PWM controller with low start-up current. At normal operation, the switching frequency is externally programmable and trimmed to tight range, and the
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AP3102/V/L
AP3102/V/L
20kHz
DS37419
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Untitled
Abstract: No abstract text available
Text: ZXMN6A07F 60V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS=60V; RDS(ON)=0.4⍀ D=1.05A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power
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ZXMN6A07F
ZXMN6A07FTA
ZXMN6A07FTC
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ZXMN6A07F
Abstract: ZXMN6A07FTA ZXMN6A07FTC Marking 7n6 Mosfet
Text: ZXMN6A07F 60V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS=60V; RDS(ON)=0.4 ID=1A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This
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ZXMN6A07F
ZXMN6A07FTA
ZXMN6A07FTC
ZXMN6A07F
ZXMN6A07FTA
ZXMN6A07FTC
Marking 7n6 Mosfet
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0018g
Abstract: ZXMN6A07Z ZXMN6A07ZTA Marking 7n6 Mosfet
Text: ZXMN6A07Z 60V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS=60V; RDS(ON)=0.4⍀; ID=1.9A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage,
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ZXMN6A07Z
ZXMN6A07ZTA
0018g
ZXMN6A07Z
ZXMN6A07ZTA
Marking 7n6 Mosfet
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ZXMN6A07F
Abstract: ZXMN6A07FTA ZXMN6A07FTC 18a diode sot23 18a sot23 Marking 7n6 Mosfet
Text: ZXMN6A07F 60V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY BR DSS=60V; RDS(ON)=0.4 D=1.05A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power
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ZXMN6A07F
ZXMN6A07FTA
ZXMN6A07FTC
uni00
ZXMN6A07F
ZXMN6A07FTA
ZXMN6A07FTC
18a diode sot23
18a sot23
Marking 7n6 Mosfet
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