SOT-89 marking 3b
Abstract: 3b transistor KIA431AF marking 3b SOT89 3B SOT-89 marking 3b sot-89 marking 3B transistor kia431a sot-89
Text: SEMICONDUCTOR KIA431AF MARKING SPECIFICATION SOT-89 PACKAGE 1. Marking method Laser Marking 2. Marking No. Item Marking Description Device Mark 3B KIA431AF * Grade - - Lot No. 816 1 2 8 Year 0 ~ 9 : 1900~1999 16 Week 16 : 16th Week Note * Grade: Transistor only
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KIA431AF
OT-89
SOT-89 marking 3b
3b transistor
KIA431AF
marking 3b SOT89
3B SOT-89
marking 3b sot-89
marking 3B
transistor
kia431a
sot-89
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BC856BW
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR EPITAXIAL TRANSISTORS BC856W , 857W, 858W SOT-323 Formed SMD Package Marking BC856W =3D BC857AW =3E BC856AW =3A BC857BW =3F BC856BW =3B BC857CW =3G
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BC856W
OT-323
BC857AW
BC856AW
BC857BW
BC856BW
BC857CW
BC857W
BC858W
BC856BW
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3D smd marking
Abstract: SMD Transistors 3f SMD IC ts 4141 BC856BW SOT SMD IC BC856W-BC858W BC856AW BC856W BC857AW BC857BW
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR EPITAXIAL TRANSISTORS BC856W , 857W, 858W SOT-323 Formed SMD Package Marking BC856W =3D BC857AW =3E BC856AW =3A BC857BW =3F BC856BW =3B BC857CW =3G
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BC856W
OT-323
BC857AW
BC856AW
BC857BW
BC856BW
BC857CW
BC857W
BC858W
3D smd marking
SMD Transistors 3f
SMD IC ts 4141
BC856BW
SOT SMD IC
BC856W-BC858W
BC856AW
BC856W
BC857AW
BC857BW
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SMD TRANSISTOR MARKING 3B
Abstract: cmbt918
Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company SOT-23 Formed SMD Package CMBT918 VHF/UHF TRANSISTOR N–P–N transistor Marking CMBT918 = 3B PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration 1 = BASE 2 = EMITTER
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ISO/TS16949
OT-23
CMBT918
C-120
SMD TRANSISTOR MARKING 3B
cmbt918
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2620G Silicon NPN epitaxial planar type For low-frequency driver amplification • Package ■ Features • Code SSMini3-F3 • Marking Symbol: 3B • Pin Name 1: Base 2: Emitter
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2002/95/EC)
2SD2620G
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SMD TRANSISTOR MARKING 3B
Abstract: cmbt918 transistor smd marking JT
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT918 VHF/UHF TRANSISTOR N–P–N transistor Marking CMBT918 = 3B PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration 1 = BASE
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OT-23
CMBT918
C-120
SMD TRANSISTOR MARKING 3B
cmbt918
transistor smd marking JT
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VEBO-15V
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2620G Silicon NPN epitaxial planar type For low-frequency driver amplification • Package ■ Features • Code SSMini3-F3 • Marking Symbol: 3B • Pin Name 1: Base 2: Emitter
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2002/95/EC)
2SD2620G
VEBO-15V
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BC856
Abstract: BC856A BC856B BC857 BC857A BC857B BC857C BC858 BC858A BC858B
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BC856 BC857 BC858 SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P transistors Marking BC856 = 3D BC856A = 3A BC856B = 3B BC857 = 3H BC857A = 3E
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OT-23
BC856
BC857
BC858
BC856
BC856A
BC856B
BC857A
BC857B
BC856A
BC856B
BC857
BC857A
BC857B
BC857C
BC858
BC858A
BC858B
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Untitled
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BC856 BC857 BC858 SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P transisto rs Marking BC856 = 3D BC856A = 3A BC856B = 3B BC857 = 3H BC857A = 3E
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OT-23
BC856
BC857
BC858
BC856
BC856A
BC856B
BC857A
BC857B
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2620G Silicon NPN epitaxial planar type For low-frequency driver amplification • Package • Code SSMini3-F3 • Marking Symbol: 3B • Pin Name 1: Base 2: Emitter 3: Collector
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2002/95/EC)
2SD2620G
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ts 4141 TRANSISTOR smd
Abstract: CMBT918 transistor marking SA p sot-23 c120 equivalent SMD TRANSISTOR MARKING 3B
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT918 VHF/UHF TRANSISTOR N–P–N transistor Marking CMBT918 = 3B Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 1 2 ABSOLUTE MAXIMUM RATINGS
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OT-23
CMBT918
C-120
ts 4141 TRANSISTOR smd
CMBT918
transistor marking SA p sot-23
c120 equivalent
SMD TRANSISTOR MARKING 3B
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Untitled
Abstract: No abstract text available
Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer SOT-23 Formed SMD Package CMBT918 VHF/UHF TRANSISTOR N–P–N transistor Marking CMBT918 = 3B PACKAGE OUTLINE DETAILS
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OT-23
CMBT918
C-120
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Untitled
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT918 VHF/ UHF TRANSISTOR N–P–N transisto r Marking CMBT918 = 3B Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 1 2 ABSOLUTE MAXIMUM RATINGS
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OT-23
CMBT918
C-120
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sot-23 Marking 3D
Abstract: BC856 sot-23 MARKING CODE 3d 3D marking sot23 3H SOT23 BC856B SOT23 BC856A BC856B BC857 BC858
Text: PNP General Purpose Transistor: BC856/857/858 Features: tLow current max.100mA tLow voltage (max.65v) Applications: t SOT-23 Ordering Information Type No. Marking: Package Code: BC856A/B 3D/3A/3B SOT-23 BC857A/B/C 3H/3E/3F/3G SOT-23 BC858A/B/C 3J/3K/3L
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BC856/857/858
100mA)
OT-23
BC856A/B
BC857A/B/C
BC858A/B/C
BC856
sot-23 Marking 3D
BC856
sot-23 MARKING CODE 3d
3D marking sot23
3H SOT23
BC856B SOT23
BC856A
BC856B
BC857
BC858
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TPC8203
Abstract: No abstract text available
Text: TPC8203 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U−MOSII TPC8203 Lithium Ion Battery Applications Portable Equipment Applications Notebook PCs Unit: mm l Small footprint due to small and thin package l Low drain−source ON resistance
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TPC8203
TPC8203
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DEVICE MARKING CODE 3B
Abstract: TPC8301
Text: TPC8301 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L2−π−MOSVI TPC8301 Lithium Ion Battery Applications Portable Equipment Applications Unit: mm Notebook PC Applications Small footprint due to small and thin package Low drain−source ON resistance
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TPC8301
DEVICE MARKING CODE 3B
TPC8301
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Untitled
Abstract: No abstract text available
Text: TPC8203 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U−MOSII TPC8203 Lithium Ion Battery Applications Portable Equipment Applications Unit: mm Notebook PC Applications • Small footprint due to small and thin package • Low drain−source ON resistance
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TPC8203
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Untitled
Abstract: No abstract text available
Text: COIL CMBT918 VHF/UHF TRANSISTOR N -P-N transistor Marking CMBT918 = 3B PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration 1 = BASE 2 = EMITTER 3 - COLLECTOR ABSOLUTE MAXIMUM RATINGS Collector-base voltage open emitter Collector-emitter voltage (open base)
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CMBT918
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BC856
Abstract: BC856A BC856B BC857 BC857A BC857B BC857C BC858 BC858A BC858B
Text: BC856 BC857 BC858 SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors Marking BC856 = 3D BC856A = 3A BC856B = 3B BC857 = 3H BC857A = 3E BC857B = 3F BC857C = 3G BC858 = 3M BC858A = 3J BC858B = 3K BC858C = 3L PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm _3.0_
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BC856
BC857
BC858
BC856
BC856A
BC856B
BC857A
BC857B
BC857C
BC856A
BC856B
BC857
BC857A
BC857B
BC857C
BC858
BC858A
BC858B
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cmbt918
Abstract: No abstract text available
Text: eon CMBT918 VHF/UHF TRANSISTOR N-P-N transistor Marking CMBT918 = 3B PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm _3.0_ 2.8 0.48 0.38 0.14 3 2.6 Pin configuration 2.4 1 = BASE 2 = EMITTER 3 = COLLECTOR _1.02 o.er 0.60 0.40 2.00 1.80 ABSOLUTE MAXIMUM RATINGS
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CMBT918
cmbt918
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Untitled
Abstract: No abstract text available
Text: CMBT918 VHF/UHF TRANSISTOR N -P -N transistor Marking PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm CMBT918 = 3B _3 .0_ 2.8 0.48 0.38 3 Pin configuration 26 2.4 1 = BASE 2 = EMITTER 3 = COLLECTOR 1.02_ "0.89 0.60 0.40 2.00 1.80 ABSOLUTE MAXIMUM RATINGS Collector-base voltage open emitter
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CMBT918
23A33TM
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Untitled
Abstract: No abstract text available
Text: CSA1162 LOW FREQUENCY GENERAL PURPOSE AMPLIFIER TRANSISTOR P-N-P transistor PACKAGE O U TLIN E DETAILS ALL DIM EN SION S IN nun Marking CSA1162Y-3E CSA1162GR G -3F _3.0 2.8 0.14 Û.09 0.48 o 3b Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 2.6 2.4 _1.02
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CSA1162
CSA1162Y-3E
CSA1162GR
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Untitled
Abstract: No abstract text available
Text: COIL CMBT918 VHF/UHF TRANSISTOR N-P-N transistor Marking CMBT918 = 3B PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm 3.0 2.8 0.14 0.48 I 0.38 1 1 3 1 I I1 2.6 Pin configuration 2.4 1 = BASE 2 = EMITTER 3 « COLLECTOR _1.02 0.89" 2.00 0.60 57«f 1.80 ABSOLUTE MAXIMUM RATINGS
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CMBT918
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MMBT3960
Abstract: MMBT3960A MMBT4260 MMBT6543 MMBT4261 3D MARKING SOT-23 sot-23 Marking 3D 3D marking sot23 MMBC1009F1 MMBC1321Q2
Text: SURFACE MOUNT PRODUCTS — SOT 23 continued SOT-23 Transistors, VHF/UHF Amplifiers, Mixers, Oscillators P inout: 1-Base, 2 -E m itte r, 3 -C o lle c to r NPN 'T Device c ob Max (pF) Marking Min (GHz @ 'c (mA) v BR(CEO) 1T 15 3F 3E Q2 Q3 Q4 Q5 3B 3A F1 F2
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OT-23
MMBT3960A
MMBT3960
MMBT6543
MMBTH10
MMBC1321Q2
MMBC1321Q3
MMBC1321Q4
MMBC1321Q5
MMBT918
MMBT4260
MMBT4261
3D MARKING SOT-23
sot-23 Marking 3D
3D marking sot23
MMBC1009F1
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