DEVICE MARKING CODE 3B
Abstract: TPC8301
Text: TPC8301 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L2−π−MOSVI TPC8301 Lithium Ion Battery Applications Portable Equipment Applications Unit: mm Notebook PC Applications Small footprint due to small and thin package Low drain−source ON resistance
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TPC8301
DEVICE MARKING CODE 3B
TPC8301
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Untitled
Abstract: No abstract text available
Text: TPC8301 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L2−π−MOSVI TPC8301 Lithium Ion Battery Applications Portable Equipment Applications Notebook PCs Unit: mm Small footprint due to small and thin package Low drain−source ON resistance
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TPC8301
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3b transistor
Abstract: 3B marking TPC8301
Text: TPC8301 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L2−π−MOSVI TPC8301 Lithium Ion Battery Applications Portable Equipment Applications Notebook PCs Unit: mm Small footprint due to small and thin package Low drain−source ON resistance
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TPC8301
3b transistor
3B marking
TPC8301
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Untitled
Abstract: No abstract text available
Text: TPC8301 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L2−π−MOSVI TPC8301 Lithium Ion Battery Applications Portable Equipment Applications Notebook PC Applications Unit: mm z Small footprint due to small and thin package z Low drain−source ON resistance
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TPC8301
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TPC8301
Abstract: No abstract text available
Text: TPC8301 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L2−π−MOSVI TPC8301 Lithium Ion Battery Applications Portable Equipment Applications Notebook PCs Unit: mm Small footprint due to small and thin package Low drain−source ON resistance
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TPC8301
TPC8301
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Untitled
Abstract: No abstract text available
Text: TPC8301 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L2−π−MOSVI TPC8301 Lithium Ion Battery Applications Portable Equipment Applications Notebook PCs Unit: mm l Small footprint due to small and thin package l Low drain−source ON resistance
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TPC8301
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Untitled
Abstract: No abstract text available
Text: TPC8301 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L2−π−MOSVI TPC8301 Lithium Ion Battery Applications Portable Equipment Applications Notebook PCs Unit: mm Small footprint due to small and thin package Low drain−source ON resistance
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TPC8301
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TPC8301
Abstract: No abstract text available
Text: TPC8301 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L2−π−MOSVI TPC8301 Lithium Ion Battery Applications Portable Equipment Applications Notebook PCs Unit: mm l Small footprint due to small and thin package l Low drain−source ON resistance
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TPC8301
TPC8301
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5252 F 1009 4-pin
Abstract: TPC 8028 MARKING S3H SOT363 TK8A50D equivalent tk6a65d equivalent 2SK4112 TPCA8030-H toshiba laptop charging CIRCUIT diagram TK80A08K3 TPCA*8025
Text: 2009-5 PRODUCT GUIDE MOSFETs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4
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2SK2056
Abstract: 2SK1603 2sk1603 datasheet TOSHIBA "ULTRA HIGH SPEED" DIODE 1A transistor 2SK1603 2SK3561 equivalent 2SK2915 EQUIVALENT 1045y 2SK3569 equivalent 2SK1078
Text: O W Y.C M.T .1 O W C W 2005-3 WW .100Y. M.T O W WW .100Y.C M.TW .TW M WW 00Y.CO .TW .CO .TW Y W M .1 W.1 Y.COM W WW 00Y.CO .TW W W W .T 00 W.1 Y.COM W W.1 Y.COM W W W W .T W 00 W M.T .100 W.1 Y.COM W M.T O W O W C . .C W WW .100Y .TW M.T .100 .TW 00Y M O 1
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BCE0017B
2SK2056
2SK1603
2sk1603 datasheet
TOSHIBA "ULTRA HIGH SPEED" DIODE 1A
transistor 2SK1603
2SK3561 equivalent
2SK2915 EQUIVALENT
1045y
2SK3569 equivalent
2SK1078
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BJT 2n3904
Abstract: transistor r5 3pin 2N3904 fg 680 fan 12v 3pin AN-003 2sb772 G760A G768B SI4435DY-T1
Text: AN-003 Global Mixed-mode Technology Inc. Application Note 12V Fan Speed Controlling and Driving with G760A or G768B Introduction As the development of the technology, many electronic products have strong computing power. Because that the high computing power IC usually need more electricity, the chip will be getting hotter and hotter
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AN-003
G760A
G768B
BJT 2n3904
transistor r5 3pin
2N3904
fg 680
fan 12v 3pin
AN-003
2sb772
G760A
G768B
SI4435DY-T1
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2SK3567 equivalent
Abstract: 2SK3569 equivalent TPCA*8023 TK8A50D equivalent 2SK2056 2SK3878 equivalent tpca8023 2SK941 equivalent 2SK3561 equivalent 2SK1603
Text: 2008-9 PRODUCT GUIDE Power MOSFETs s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Toshiba’s power MOSFET devices meet the needs of a wide range of ultra-high-density applications. 1.Features and Structure. 2
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BCE0017F
E-28831
BCE0017G
2SK3567 equivalent
2SK3569 equivalent
TPCA*8023
TK8A50D equivalent
2SK2056
2SK3878 equivalent
tpca8023
2SK941 equivalent
2SK3561 equivalent
2SK1603
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2SK3878 equivalent
Abstract: 2sk2611 2SK3759 2SK3878 2SK3869 2SK2013 toshiba POWER MOS FET 2sj 2sk 2SK3868 2SK3567 equivalent 2SK2718
Text: [ 2 ] Selection Guide [ 2 ] Selection Guide [ 2 ] Selection Guide Power MOSFET Product Line-up ID = 0.5~20 A 1. VDSS (V) 12 16 20 30 40 50 60 100 150 180 ◊2SK2963 (0.7) ▲2SK2962 (0.7) ◊2SJ508 (1.9) ▲2SJ509 (1.9) ▲2SK3670 (1.7) ♦2SJ313 (5.0) ▼2SJ338 (5.0)
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2SK2963
2SK2962
2SJ508
2SJ509
2SK3670
2SJ313
2SJ338
2SK2013
2SK2162
2SJ360
2SK3878 equivalent
2sk2611
2SK3759
2SK3878
2SK3869
2SK2013
toshiba POWER MOS FET 2sj 2sk
2SK3868
2SK3567 equivalent
2SK2718
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2SK4207
Abstract: to220sis TPCA*8023 tk80A08K3 TPC8119 TK40A08K3 2SK4112 ssm3j16fs 2sk3568 TPC8A03
Text: 製品カタログ 2009-9 東芝半導体 製品カタログ MOSFET SEMICONDUCTOR h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S 1 特長と構造. 3
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BCJ0082B
BCJ0082A
2SK4207
to220sis
TPCA*8023
tk80A08K3
TPC8119
TK40A08K3
2SK4112
ssm3j16fs
2sk3568
TPC8A03
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IRF540 complementary
Abstract: IRFZ44N complementary std2n52 TOSHIBA IRFZ44A datasheet STP2NA60 SSH6N80 rfp60n06 ste38na50 IRF630 complementary IRF3205 IR
Text: Sales type RFP6N50 RFD16N03LSM RFP15N05L RFP50N05 RFP15N05 RFP50N05L RFD14N05L RFD14N05LSM RFD14N05SM RFP14N05L RFP25N05 RFP14N05 HUF75344P3 HUF75344S3S HUF75345S3S HUF75345G3 HUF75343S3S HUF75307D3S HUF75344G3 HUF75345P3 HUF75343P3 HUF5343G3 HUF75321P3 HUF75329P3
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RFP6N50
RFD16N03LSM
RFP15N05L
RFP50N05
RFP15N05
RFP50N05L
RFD14N05L
RFD14N05LSM
RFD14N05SM
RFP14N05L
IRF540 complementary
IRFZ44N complementary
std2n52
TOSHIBA IRFZ44A datasheet
STP2NA60
SSH6N80
rfp60n06
ste38na50
IRF630 complementary
IRF3205 IR
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YTA630
Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
Text: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509
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2N7000
2N7002
2SJ377
2SJ378
2SJ380
2SJ401
2SJ402
2SJ407
2SJ412
2SJ419
YTA630
MTW14P20
BSS125
MTAJ30N06HD
2SK2837 equivalent
SMU10P05
SMP60N06 replacement
STE180N10
RFH75N05E
IRFD620
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2SK3566 equivalent
Abstract: 2SK3562 equivalent 2SK3561 equivalent 2SK3878 equivalent 2SK3568 equivalent 2SK3911 equivalent 2SK941 equivalent tpc8118 equivalent replacement tpc8118 2SK3767 equivalent
Text: 2007-12 PRODUCT GUIDE Power MOSFETs Toshiba’s power MOSFET devices meet the needs of a wide range of ultra-high-density applications. 1.Features and Structure. 2
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BCE0017E
S-167
BCE0017F
2SK3566 equivalent
2SK3562 equivalent
2SK3561 equivalent
2SK3878 equivalent
2SK3568 equivalent
2SK3911 equivalent
2SK941 equivalent
tpc8118 equivalent replacement
tpc8118
2SK3767 equivalent
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TPC8301 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L2-tt-MOSVI TPC8301 LITHIUM ION BATTERY NOTE BOOK PC INDUSTRIAL APPLICATIONS Unit in mm PORTABLE MACHINES AND TOOLS Low Drain-Source ON Resistance : RDS(ON)-95mO (Typ.) High Forward Transfer Admittance : |Yfs| = 4S (Typ.)
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OCR Scan
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TPC8301
-95mO
--30V)
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Untitled
Abstract: No abstract text available
Text: TO SHIBA TPC8301 TOSHIBA FIELD EFFECT TRANSISTOR T P f SILICON P CHANNEL MOS TYPE L2- tt-MOSVI s i m LITHIUM ION BATTERY INDUSTRIAL APPLICATIONS NOTE BOOK PC ORTABLE MACHINES AND TOOLS Low Drain-Source ON Resistance : Rd S (ON)= 95mO (Typ.) High Forward Transfer Admittance
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OCR Scan
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TPC8301
--30V)
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transistor 1127
Abstract: No abstract text available
Text: TPC8301 TOSHIBA TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L2- tt-M O SVI TPC8301 LITHIUM ION BATTERY NOTE BOOK PC INDUSTRIAL APPLICATIONS Unit in mm nn n n jè. PORTABLE MACHINES AN D TOOLS Low Drain-Source O N Resistance : RdS (O N ) = 95mO (Typ.)
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TPC8301
--30V)
transistor 1127
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TPC8301 TO SHIBA FIELD EFFECT TRANSISTOR SILICON P C HANN EL MOS TYPE L2- tt-M O S V I TPC8301 LITH IU M ION BATTERY INDUSTRIAL APPLICATIONS NOTE BO O K PC PORTABLE M ACHINES A N D TOOLS • • • • Low Drain-Source ON Resistance : Rd S (ON)= 95mO (Typ.)
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TPC8301
20kfi)
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TPC8301
Abstract: No abstract text available
Text: TO SH IBA TPC8301 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L2- tt-MOSVI TPC8301 LITHIUM ION BATTERY INDUSTRIAL APPLICATIONS U nit in mm NOTE BOOK PC PORTABLE MACHINES AND TOOLS • Low Drain-Source ON Resistance : Rd S (ON) - 95 mH (Typ.)
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OCR Scan
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TPC8301
TPC8301
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Untitled
Abstract: No abstract text available
Text: TPC8301 TO SHIBA TOSHIBA FIELD EFFECT TRANSISTOR LITHIUM ION BATTERY SILICON P CHANNEL MOS TYPE L2-tt-MOSVI TPC8301 INDUSTRIAL APPLICATIONS Unit in mm NOTE BOOK PC 8 5 rfi RR R R PORTABLE MACHINES AND TOOLS Low Drain-Source ON Resistance : Rd S (ON) —95mil (Typ.)
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OCR Scan
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TPC8301
95mil
--10/uA
20kfl)
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Untitled
Abstract: No abstract text available
Text: T O SH IB A TPC8301 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L2- tt-MOSVI TPC8301 INDUSTRIAL APPLICATIONS U nit in mm LITHIUM ION BATTERY NOTE BOOK PC A PORTABLE MACHINES AND TOOLS . td - - ntr l~\ irr 's • •LVJ J 8 ( U IN ) ~
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TPC8301
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