TPC8203
Abstract: No abstract text available
Text: TPC8203 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U−MOSII TPC8203 Lithium Ion Battery Applications Portable Equipment Applications Notebook PCs Unit: mm l Small footprint due to small and thin package l Low drain−source ON resistance
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TPC8203
TPC8203
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Abstract: No abstract text available
Text: TPC8203 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U−MOSII TPC8203 Lithium Ion Battery Applications Portable Equipment Applications Unit: mm Notebook PC Applications • Small footprint due to small and thin package • Low drain−source ON resistance
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TPC8203
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Untitled
Abstract: No abstract text available
Text: TPC8203 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U−MOSII TPC8203 Lithium Ion Battery Applications Portable Equipment Applications Notebook PCs Low drain−source ON resistance Unit: mm : RDS (ON) = 14 mΩ (typ.) High forward transfer admittance : |Yfs| = 8 S (typ.)
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TPC8203
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Untitled
Abstract: No abstract text available
Text: TPC8203 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U−MOSII TPC8203 Lithium Ion Battery Applications Portable Equipment Applications Unit: mm Notebook PC Applications • Small footprint due to small and thin package • Low drain−source ON resistance
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TPC8203
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TPC82
Abstract: No abstract text available
Text: TPC8203 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U−MOSII TPC8203 Lithium Ion Battery Applications Portable Equipment Applications Notebook PC Applications Unit: mm • Small footprint due to small and thin package • Low drain−source ON resistance
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TPC8203
TPC82
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Untitled
Abstract: No abstract text available
Text: TPC8203 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U−MOSII TPC8203 Lithium Ion Battery Applications Portable Equipment Applications Notebook PCs Low drain−source ON resistance Unit: mm : RDS (ON) = 14 mΩ (typ.) High forward transfer admittance : |Yfs| = 8 S (typ.)
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TPC8203
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3b transistor
Abstract: TPC8203
Text: TPC8203 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U−MOSII TPC8203 Lithium Ion Battery Applications Portable Equipment Applications Notebook PCs Unit: mm l Small footprint due to small and thin package l Low drain−source ON resistance
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TPC8203
3b transistor
TPC8203
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Untitled
Abstract: No abstract text available
Text: TPC8203 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U−MOSII TPC8203 Lithium Ion Battery Applications Portable Equipment Applications Unit: mm Notebook PC Applications • Small footprint due to small and thin package • Low drain−source ON resistance
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TPC8203
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TPC8203
Abstract: No abstract text available
Text: TPC8203 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U •MOSII TPC8203 Lithium Ion Battery Applications Portable Equipment Applications Notebook PCs Unit: mm l Small footprint due to small and thin package l Low drain−source ON resistance
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TPC8203
TPC8203
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cha marking code
Abstract: No abstract text available
Text: TPC8203 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U−MOSII TPC8203 Lithium Ion Battery Applications Portable Equipment Applications Unit: mm Notebook PC Applications • Small footprint due to small and thin package • Low drain−source ON resistance
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TPC8203
cha marking code
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TPC8203
Abstract: 3b transistor
Text: TPC8203 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U−MOSII TPC8203 Lithium Ion Battery Applications Portable Equipment Applications Notebook PCs Unit: mm Small footprint due to small and thin package Low drain−source ON resistance : RDS (ON) = 14 mΩ (typ.)
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TPC8203
TPC8203
3b transistor
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tpc8107
Abstract: tpc8107 mosfet TPC8107 application circuit 7179 TPCS8210 application TPC8110 tpc8107 equivalent US6 KEC MAX1717 TPC6002
Text: Power MOSFETs TPC Series PRODUCT GUIDE Toshiba Power Compact Series devices have been developed for use in high-speed switching applications and in various interfaces. Toshiba has developed this high-efficiency low ON-resistance series using processes specially formulated to ensure that the devices can be used in
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3525C-0209
tpc8107
tpc8107 mosfet
TPC8107 application circuit
7179
TPCS8210 application
TPC8110
tpc8107 equivalent
US6 KEC
MAX1717
TPC6002
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2SK2056
Abstract: 2SK1603 2sk1603 datasheet TOSHIBA "ULTRA HIGH SPEED" DIODE 1A transistor 2SK1603 2SK3561 equivalent 2SK2915 EQUIVALENT 1045y 2SK3569 equivalent 2SK1078
Text: O W Y.C M.T .1 O W C W 2005-3 WW .100Y. M.T O W WW .100Y.C M.TW .TW M WW 00Y.CO .TW .CO .TW Y W M .1 W.1 Y.COM W WW 00Y.CO .TW W W W .T 00 W.1 Y.COM W W.1 Y.COM W W W W .T W 00 W M.T .100 W.1 Y.COM W M.T O W O W C . .C W WW .100Y .TW M.T .100 .TW 00Y M O 1
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BCE0017B
2SK2056
2SK1603
2sk1603 datasheet
TOSHIBA "ULTRA HIGH SPEED" DIODE 1A
transistor 2SK1603
2SK3561 equivalent
2SK2915 EQUIVALENT
1045y
2SK3569 equivalent
2SK1078
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fqp60n06
Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
Text: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier
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STP7NB40
STT3PF30L
STD20NE03L
STP60NE03L-12
STP60NE03L-10
STP40NF03L
STP80NE03L-06
STS4DPF30L
fqp60n06
spb32N03l
rfp60n06
SSH6N80
FQP50N10
FSD6680
STP55NF06 AND ITS EQUIVALENT
SFP70N03
HGTG*N60A4D
irf630 irf640
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ESM 740
Abstract: transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126
Text: 2004-3 PRODUCT GUIDE General-Purpose Surface-Mount Devices semiconductor 2004 http://www.semicon.toshiba.co.jp/eng Greeting from Toshiba Toshiba Corporation has developed and provided key devices such as information equipment and information appliance, employing the most advanced technology.
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SCE0003A
ESM 740
transistor SMD t04 51
D245A
LM2804
transistor SMD t04
Solar Garden Light Controller 4 pin
2fu smd transistor
transistor t04 smd
pnp Octal Darlington Transistor Arrays DIP
WB126
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2SK3878 equivalent
Abstract: 2sk2611 2SK3759 2SK3878 2SK3869 2SK2013 toshiba POWER MOS FET 2sj 2sk 2SK3868 2SK3567 equivalent 2SK2718
Text: [ 2 ] Selection Guide [ 2 ] Selection Guide [ 2 ] Selection Guide Power MOSFET Product Line-up ID = 0.5~20 A 1. VDSS (V) 12 16 20 30 40 50 60 100 150 180 ◊2SK2963 (0.7) ▲2SK2962 (0.7) ◊2SJ508 (1.9) ▲2SJ509 (1.9) ▲2SK3670 (1.7) ♦2SJ313 (5.0) ▼2SJ338 (5.0)
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2SK2963
2SK2962
2SJ508
2SJ509
2SK3670
2SJ313
2SJ338
2SK2013
2SK2162
2SJ360
2SK3878 equivalent
2sk2611
2SK3759
2SK3878
2SK3869
2SK2013
toshiba POWER MOS FET 2sj 2sk
2SK3868
2SK3567 equivalent
2SK2718
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IRF1830G
Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
Text: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Infineon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23
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AO4405
AO4407
AO4408
AO4409
AO4410
AO4411
AO4413
AO4415
AO4422
AO4700
IRF1830G
IRF1830
transistor IRF1830G
APM2054N equivalent
apm2054n
AP85L02h
AP70N03S
2SK3683
ap70l02h
2SK2696
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YTA630
Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
Text: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509
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2N7000
2N7002
2SJ377
2SJ378
2SJ380
2SJ401
2SJ402
2SJ407
2SJ412
2SJ419
YTA630
MTW14P20
BSS125
MTAJ30N06HD
2SK2837 equivalent
SMU10P05
SMP60N06 replacement
STE180N10
RFH75N05E
IRFD620
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2SK3566 equivalent
Abstract: 2SK3562 equivalent 2SK3561 equivalent 2SK3878 equivalent 2SK3568 equivalent 2SK3911 equivalent 2SK941 equivalent tpc8118 equivalent replacement tpc8118 2SK3767 equivalent
Text: 2007-12 PRODUCT GUIDE Power MOSFETs Toshiba’s power MOSFET devices meet the needs of a wide range of ultra-high-density applications. 1.Features and Structure. 2
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BCE0017E
S-167
BCE0017F
2SK3566 equivalent
2SK3562 equivalent
2SK3561 equivalent
2SK3878 equivalent
2SK3568 equivalent
2SK3911 equivalent
2SK941 equivalent
tpc8118 equivalent replacement
tpc8118
2SK3767 equivalent
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TPC8203
Abstract: No abstract text available
Text: TO SH IBA TPC8203 TENTATIVE TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE U-M OSII TPC8203 LITHIUM ION BATTERY APPLICATIONS INDUSTRIAL APPLICATIONS NOTE BOOK PC, PORTABLE EQUIPMENTS APPLICATIONS Low Drain-Source ON Resistance : RßS (ON) = 14
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TPC8203
TPC8203
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TPC8203 TENTATIVE TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE U-MOSII TPC8203 LITHIUM ION BATTERY APPLICATIONS NOTE BOOK PC, PORTABLE EQUIPMENTS APPLICATIONS Low Drain-Source ON Resistance : RßS (ON)= l^m H (Typ.) High Forward Transfer Admittance: |Yfs| = 8S (Typ.)
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TPC8203
10//A
j--25Í
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TPC8203 TENTATIVE TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE U-M O SII TPC8203 LITHIUM ION BATTERY APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm NOTE BOOK PC, PORTABLE EQUIPMENTS APPLICATIONS bUK-ö 8 Low Drain-Source ON Resistance
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TPC8203
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TPC8203 TENTATIVE TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE U-MOSII TPC8203 LITHIUM ION BATTERY APPLICATIONS INDUSTRIAL APPLICATIONS NOTE BOOK PC, PORTABLE EQUIPMENTS APPLICATIONS Low Drain-Source ON Resistance : R ßS (ON)= 14mil (Typ.)
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TPC8203
14mil
20kil)
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TPC8203
Abstract: TPCS8203 BVDSS
Text: TOSHIBA TPCS8203 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE U -M O SÏÏ TPCS8203 LITHIUM ION BATTERY APPLICATIONS NOTE BOOK PC INDUSTRIAL APPLICATIONS Unit in mm TSSOP-8 PORTABLE MACHINES AND TOOLS flffl • • • • Low Drain-Source ON Resistance : RßS (ON) — 1?
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TPCS8203
TPC8203
TPCS8203
BVDSS
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