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    MARKING 1CS SOT Search Results

    MARKING 1CS SOT Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TCR2EF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
    TCR2LF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
    TCR3DF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 300 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation

    MARKING 1CS SOT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor Bc 580

    Abstract: marking 1cs 847S transistor bc 100
    Text: BC 847S NPN Silicon AF Transistor Array • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated Transistors in one package Type Marking Ordering Code Pin Configuration


    Original     		PDF OT-363 Q62702-2372 Jan-20-1997 transistor Bc 580 marking 1cs 847S transistor bc 100

    transistor bc icbo nA npn

    Abstract: 847S Q62702-C2372 marking 1cs
    Text: BC 847S NPN Silicon AF Transistor Array • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated Transistors with high matching in one package Type Marking Ordering Code


    Original     		PDF Q62702-C2372 OT-363 May-12-1998 transistor bc icbo nA npn 847S Q62702-C2372 marking 1cs

    847S

    Abstract: VPS05604 marking 1cs
    Text: BC 847S NPN Silicon AF Transistor Array 4 • For AF input stages and driver applications 5 6 • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated Transistors with good matching in one package 2 3 1 VPS05604


    Original     		PDF VPS05604 EHA07178 OT-363 EHP00381 EHP00367 Nov-08-1999 EHP00365 EHP00364 847S VPS05604 marking 1cs

    Untitled

    Abstract: No abstract text available
    Text: BC847S NPN Silicon AF Transistor Array • For AF input stages and driver applications • High current gain 4 5 6 • Low collector-emitter saturation voltage • Two galvanic internal isolated Transistors with good matching in one package C1 B2 E2 6 5


    Original     		PDF BC847S EHA07178 OT363

    BC847S

    Abstract: VPS05604
    Text: BC847S NPN Silicon AF Transistor Array 4  For AF input stages and driver applications 5 6  High current gain  Low collector-emitter saturation voltage  Two galvanic internal isolated Transistors with good matching in one package 2 3 1 VPS05604 C1 B2


    Original     		PDF BC847S VPS05604 EHA07178 OT363 EHP00381 EHP00367 Nov-29-2001 EHP00365 BC847S VPS05604

    BC847S

    Abstract: VPS05604
    Text: BC847S NPN Silicon AF Transistor Array 4 • For AF input stages and driver applications 5 6 • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated Transistors with good matching in one package 2 3 1 VPS05604


    Original     		PDF BC847S VPS05604 EHA07178 OT363 EHP00381 EHP00367 Jul-02-2001 EHP00365 BC847S VPS05604

    h11e

    Abstract: No abstract text available
    Text: BC846S/ BC846U/ BC847S NPN Silicon AF Transistor Arrays • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated transistors with good matching in one package • BC846S / U, BC847S: For orientation in reel see


    Original     		PDF BC846S/ BC846U/ BC847S BC846S BC847S: BC846U EHA07178 h11e

    MARKING 1cs

    Abstract: No abstract text available
    Text: BC847S NPN Silicon AF Transistor Array 4  For AF input stages and driver applications 5 6  High current gain  Low collector-emitter saturation voltage  Two galvanic internal isolated Transistors with good matching in one package 2 3 1 VPS05604 C1 B2


    Original     		PDF BC847S VPS05604 EHA07178 OT363 MARKING 1cs

    BC846U/S

    Abstract: BC846U
    Text: BC846S/ BC846U/ BC847S NPN Silicon AF Transistor Arrays • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated transistors with good matching in one package • BC846S / U, BC847S: For orientation in reel see


    Original     		PDF BC846S/ BC846U/ BC847S BC846S BC847S: BC846U EHA07178 BC846U/S

    1DS sot363

    Abstract: marking 1DS sot363
    Text: BC846S/ BC846U/ BC847S NPN Silicon AF Transistor Arrays • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated transistors with good matching in one package • BC846S / U, BC847S: For orientation in reel see


    Original     		PDF BC846S/ BC846U/ BC847S BC846S BC847S: BC846U EHA07178 1DS sot363 marking 1DS sot363

    marking 1DS sot363

    Abstract: 1Ds SOT363 BC846S BC846U BC847S BC847U SC74 1CS MARKING 5 pin IC marking ms marking 1cs
    Text: BC846S/ BC846U/ BC847S NPN Silicon AF Transistor Arrays • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated transistors with good matching in one package • BC846S / U, BC847S: For orientation in reel see


    Original     		PDF BC846S/ BC846U/ BC847S BC846S BC847S: BC846S BC846U EHA07178 marking 1DS sot363 1Ds SOT363 BC846U BC847S BC847U SC74 1CS MARKING 5 pin IC marking ms marking 1cs

    BC847S

    Abstract: VPS05604
    Text: BC847S NPN Silicon AF Transistor Array 4  For AF input stages and driver applications 5 6  High current gain  Low collector-emitter saturation voltage  Two galvanic internal isolated Transistors with good matching in one package 2 3 1 VPS05604 C1 B2


    Original     		PDF BC847S VPS05604 EHA07178 OT363 BC847S VPS05604

    MARKING CODE CCB

    Abstract: BC847S
    Text: BC846S/ BC846U/ BC847S NPN Silicon AF Transistor Arrays • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated transistors with good matching in one package • BC846S / U, BC847S: For orientation in reel see


    Original     		PDF BC846S/ BC846U/ BC847S BC846S BC847S: BC846U EHA07178 MARKING CODE CCB BC847S

    smd code book

    Abstract: transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s DIODE SMD L4W smd diode zener code pj 78 smd transistor wv4 Motorola transistor smd marking codes
    Text: The SMD Code Book 1st character of code 0123456789 ABCDEFGHI JKLMNOPQ R STUVWXYZ Bases The SMD Codebook R P Blackwell, GM4PMK To look up a coded device, click on the first character of the device code in the table on the left. A-F G-K L-P Q-V W-Z AQ-FQ GQ-LQ


    Original     		PDF OD-80 OD123/323 OT-23, OT346 OT-323, OT-416 OT-223, OT-89 OT-143, OT-363 smd code book transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s DIODE SMD L4W smd diode zener code pj 78 smd transistor wv4 Motorola transistor smd marking codes

    TG 2309

    Abstract: MMBT2369LT1
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Switching Transistors MMBT2369LT1 MMBT2369ALT1* COLLECTOR NPN Silicon 'M o to ro la Preferred D evice BASE 2 MAXIMUM RATINGS EMITTER Rating Symbol Value C ollector-E m itter Voltage v CEO 15 Vdc C ollector-E m itter Voltage


    OCR Scan     		PDF MMBT2369LT1 MMBT2369ALT1* OT-23 O-236AB) MMBT2369ALT1 TG 2309

    transistor bc 577

    Abstract: transistor bc 103
    Text: SIEMENS BC 847S NPN Silicon AF Transistor Array >For AF input stages and driver applications >High current gain >Low collector-emitter saturation voltage >Two galvanic internal isolated Transistors in one package F] FI FI liJ lU Type Marking Ordering Code


    OCR Scan     		PDF Q62702-2372 OT-363 flE35bDS BC847S EHP00365 fl235b05 transistor bc 577 transistor bc 103

    5b1 transistor

    Abstract: transistor 5b1 transistor bc qe TRANSISTOR MARKING TE SOT363 Marking 1cs sot marking 1cs FR1E marking code YA Transistor 6c2 transistor
    Text: SIEMENS BC 847S NPN Silicon AF Transistor Array • For AF input stages and driver applications 4 • High current gain 6 • Low collector-emitter saturation voltage • Two galvanic internal isolated Transistors with high matching in one package 2 1 Type


    OCR Scan     		PDF Q62702-C2372 OT-363 Mav-12-1998 BC847S av-12-1998 5b1 transistor transistor 5b1 transistor bc qe TRANSISTOR MARKING TE SOT363 Marking 1cs sot marking 1cs FR1E marking code YA Transistor 6c2 transistor

    transistor bc 499

    Abstract: 1CS K2 marking 1cs transistor Bc 580
    Text: SIEMENS BC 847S NPN Silicon AF Transistor Array 1For AF input stages and driver applications •High current gain • Low collector-emitter saturation voltage >Two galvanic internal isolated Transistors in one package A R n 3 tr ETH "j>- Type Marking Ordering Code


    OCR Scan     		PDF Q62702-C2372 OT-363 BC847S transistor bc 499 1CS K2 marking 1cs transistor Bc 580

    TRANSISTOR 2N338

    Abstract: 2N338 2N337 SFWM marking YJ AM 2N3384 2N338 JAN zn338 2 TMT 15-4
    Text: iiU M 'U 'ivuw / gva ¿2 H o v te ttr 1971 SUPERSEDING _ Û1LL.-0-lÖÖÖO/ÖWD 4 Mafflh tOM MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSBTOR, NPN, SILICON, LOW-POWER TYPES 2N337 AND 2N338 This specification la mandatory for use bv all Departmeats and Agencies of the Department of Defense.


    OCR Scan     		PDF -8-19500/69K MIL-S-19500/89D 2N337 2N338 MEL-8-19500, MEL-S-19500 TRANSISTOR 2N338 2N338 SFWM marking YJ AM 2N3384 2N338 JAN zn338 2 TMT 15-4

    Untitled

    Abstract: No abstract text available
    Text: M PIC16C7X ic r o c h ip 8-Bit CMOS Microcontrollers with A/D Converter Devices included in this data sheet: • Low-power, high-speed CMOS EPROM technology PIC16C70 • Fully static design PIC16C71 • Wide operating voltage range: 3.0V to 6.0V PIC16C71A


    OCR Scan     		PDF PIC16C7X PIC16C70 PIC16C71 PIC16C71A PIC16C72 PIC16C73 PIC16C73A PIC16C74 PIC16C74A PIC16C7X

    transistor cross reference

    Abstract: MPT3N40 Westinghouse SCR handbook LT 8224 ZENER DIODE sje389 N9602N npn transistor RCA 467 TFK 7 segment displays PUT 2N6027 delco 466
    Text: C K TBD DOLLY LIST LOGO LIST SAFETY & RELIABLTY TEK PN SYSTEM II DIGITAL IC's MEMORIES. MOS. CM OS.ECL. TTL MICROPROCESSOR SPECIAL FUNCTION IC's DIGITAL / LINEAR ARRAYS LINEAR IC'S (PURCH) TEK-MADE IC’s 3 IC's INDEX (COLORED PGS) INCL PRGMD. SCRND.ETC


    OCR Scan     		PDF