transistor Bc 580
Abstract: marking 1cs 847S transistor bc 100
Text: BC 847S NPN Silicon AF Transistor Array • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated Transistors in one package Type Marking Ordering Code Pin Configuration
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Original
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OT-363
Q62702-2372
Jan-20-1997
transistor Bc 580
marking 1cs
847S
transistor bc 100
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PDF
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transistor bc icbo nA npn
Abstract: 847S Q62702-C2372 marking 1cs
Text: BC 847S NPN Silicon AF Transistor Array • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated Transistors with high matching in one package Type Marking Ordering Code
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Original
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Q62702-C2372
OT-363
May-12-1998
transistor bc icbo nA npn
847S
Q62702-C2372
marking 1cs
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PDF
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MARKING CODE CCB
Abstract: BC847S
Text: BC846S/ BC846U/ BC847S NPN Silicon AF Transistor Arrays • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated transistors with good matching in one package • BC846S / U, BC847S: For orientation in reel see
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Original
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BC846S/
BC846U/
BC847S
BC846S
BC847S:
BC846U
EHA07178
MARKING CODE CCB
BC847S
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PDF
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BC846U/S
Abstract: BC846U
Text: BC846S/ BC846U/ BC847S NPN Silicon AF Transistor Arrays • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated transistors with good matching in one package • BC846S / U, BC847S: For orientation in reel see
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Original
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BC846S/
BC846U/
BC847S
BC846S
BC847S:
BC846U
EHA07178
BC846U/S
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PDF
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1DS sot363
Abstract: marking 1DS sot363
Text: BC846S/ BC846U/ BC847S NPN Silicon AF Transistor Arrays • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated transistors with good matching in one package • BC846S / U, BC847S: For orientation in reel see
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Original
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BC846S/
BC846U/
BC847S
BC846S
BC847S:
BC846U
EHA07178
1DS sot363
marking 1DS sot363
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PDF
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marking 1DS sot363
Abstract: 1Ds SOT363 BC846S BC846U BC847S BC847U SC74 1CS MARKING 5 pin IC marking ms marking 1cs
Text: BC846S/ BC846U/ BC847S NPN Silicon AF Transistor Arrays • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated transistors with good matching in one package • BC846S / U, BC847S: For orientation in reel see
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Original
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BC846S/
BC846U/
BC847S
BC846S
BC847S:
BC846S
BC846U
EHA07178
marking 1DS sot363
1Ds SOT363
BC846U
BC847S
BC847U
SC74
1CS MARKING
5 pin IC marking ms
marking 1cs
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PDF
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h11e
Abstract: No abstract text available
Text: BC846S/ BC846U/ BC847S NPN Silicon AF Transistor Arrays • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated transistors with good matching in one package • BC846S / U, BC847S: For orientation in reel see
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Original
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BC846S/
BC846U/
BC847S
BC846S
BC847S:
BC846U
EHA07178
h11e
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PDF
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Untitled
Abstract: No abstract text available
Text: BC847S NPN Silicon AF Transistor Array • For AF input stages and driver applications • High current gain 4 5 6 • Low collector-emitter saturation voltage • Two galvanic internal isolated Transistors with good matching in one package C1 B2 E2 6 5
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Original
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BC847S
EHA07178
OT363
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PDF
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Frequency Control Products
Abstract: CB2V
Text: VISHAY I N T E R T E C H N O L O G Y , I N C . INTERACTIVE data book FREQUENCY CONTROL PRODUCTS vishay DALE vsE-db0020-1012 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents
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Original
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vsE-db0020-1012
Frequency Control Products
CB2V
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PDF
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MARKING 1cs
Abstract: No abstract text available
Text: BC847S NPN Silicon AF Transistor Array 4 For AF input stages and driver applications 5 6 High current gain Low collector-emitter saturation voltage Two galvanic internal isolated Transistors with good matching in one package 2 3 1 VPS05604 C1 B2
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Original
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BC847S
VPS05604
EHA07178
OT363
MARKING 1cs
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PDF
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CDR03 receiver
Abstract: varistor 250v 592 PH 105k 250v ceramic disc Piezoelectric crystal 1mhz ultrasonic FUSE T2A 250v Motorola transistor smd marking codes smps 10w 5V 230 AC to 5V dc smps capacitor type 104z 50v SR 0805 X7R capacitor
Text: MLC Capacitors Tantalum Capacitors Microwave Capacitors Thin Film Capacitors Glass Capacitors Chip Resistors Networks EMI Filters Bulk Filters Saw Filters Dielectric Filters Resonators Oscillators Thin Film Inductors Thin Film Fuses Voltage Suppressors Acoustical Piezos
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Original
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S-SF30M298-C
CDR03 receiver
varistor 250v 592 PH
105k 250v ceramic
disc Piezoelectric crystal 1mhz ultrasonic
FUSE T2A 250v
Motorola transistor smd marking codes
smps 10w 5V
230 AC to 5V dc smps
capacitor type 104z 50v
SR 0805 X7R capacitor
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PDF
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WX26 cable
Abstract: marking code H5C SMD Transistor xo-54be max 083 Crystal Oscillator, Leaded, Radial, 16.000 MHz smd transistor h5c XO-54B p l e sq3300 mto13fad XO-52BE
Text: VISHAY I N T E R T E C H N O L O G Y , I N C . INTERACTIVE data book FREQUENCY CONTROL PRODUCTS vishay DALE vsE-db0020-0507 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents
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Original
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vsE-db0020-0507
WX26 cable
marking code H5C SMD Transistor
xo-54be
max 083
Crystal Oscillator, Leaded, Radial, 16.000 MHz
smd transistor h5c
XO-54B
p l e sq3300
mto13fad
XO-52BE
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PDF
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HY64LD16162M
Abstract: HY64LD16162M-DF85E HY64LD16162M-DF85I
Text: HY64LD16162M Series Document Title 1M x 16 bit Low Low Power 1T/1C Pseudo SRAM Revision history Revision No. History Draft Date Remark 1.0 Initial Jan. 04. ’ 01 Preliminary 1.1 Revised Jul. 03. ’ 01 Preliminary Jul.18. ’ 01 Preliminary Oct. 07. ‘ 01
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Original
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HY64LD16162M
HYLD16162M
HY64LD16162M-DF85E
HY64LD16162M-DF85I
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PDF
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HY64SD16162B
Abstract: HY64SD16162B-DF85E HY64SD16162B-DF85I
Text: HY64SD16162B Series Document Title 1M x 16 bit Low Low Power 1T/1C Pseudo SRAM Revision history Revision No. History Draft Date Remark 1.0 Dec. 4. ’02 Preliminary Initial This document is a general product description and is subject to change without notice. Hynix Semiconductor Inc. does not
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Original
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HY64SD16162B
16Mbit
16bits.
HYSD16162B
HY64SD16162B-DF85E
HY64SD16162B-DF85I
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PDF
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HYUD16162B
Abstract: HY64UD16162B HY64UD16162B-DF60E HY64UD16162B-DF60I HY64UD16162B-DF70E HY64UD16162B-DF70I
Text: HY64UD16162B Series Document Title 1M x 16 bit Low Low Power 1T/1C Pseudo SRAM Revision history Revision No. History Draft Date Remark 1.0 Dec. 3. ’02 Preliminary Initial This document is a general product description and is subject to change without notice. Hynix Semiconductor Inc. does not
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Original
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HY64UD16162B
16Mbit
16bits.
HYUD16162B
HYUD16162B
HY64UD16162B-DF60E
HY64UD16162B-DF60I
HY64UD16162B-DF70E
HY64UD16162B-DF70I
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PDF
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HYUD16162B
Abstract: HYUD16162
Text: HY64UD16162B Series Document Title 1M x 16 bit Low Low Power 1T/1C Pseudo SRAM Revision history Revision No. History Draft Date Remark 1.0 Initial Dec. 3. ’02 Preliminary 1.1 DC Spec.변경 Apr. 21. ‘03 This document is a general product description and is subject to change without notice. Hynix Semiconductor Inc. does not
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Original
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HY64UD16162B
16Mbit
HYUD16162B
HYUD16162B
HYUD16162
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PDF
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Untitled
Abstract: No abstract text available
Text: HY64LD16322M Series Document Title 2M x 16 bit Low Low Power 1T/1C Pseudo SRAM Revision history Revision No. History Draft Date Remark 1.0 Initial Jan. 04. ’ 01 Preliminary 1.1 Revised Jul. 03. ’ 01 Preliminary Jul.18. ‘ 01 Preliminary Oct. 06. ’ 01
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Original
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HY64LD16322M
HYLD16322M
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PDF
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r840
Abstract: No abstract text available
Text: Phototubes PHOTOTUBES •FEATURES AND APPLICATIONS FEATURES High sensitivity and high stability make phototubes very useful in chemical and medical analytical instruments which require high reliability. Phototubes feature a wide dynamic range from several picoamperes to several microamperes, providing signal
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Original
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SE-171-41
1001E09
r840
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PDF
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transistor bc 577
Abstract: transistor bc 103
Text: SIEMENS BC 847S NPN Silicon AF Transistor Array >For AF input stages and driver applications >High current gain >Low collector-emitter saturation voltage >Two galvanic internal isolated Transistors in one package F] FI FI liJ lU Type Marking Ordering Code
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OCR Scan
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Q62702-2372
OT-363
flE35bDS
BC847S
EHP00365
fl235b05
transistor bc 577
transistor bc 103
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PDF
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transistor bc 499
Abstract: 1CS K2 marking 1cs transistor Bc 580
Text: SIEMENS BC 847S NPN Silicon AF Transistor Array 1For AF input stages and driver applications •High current gain • Low collector-emitter saturation voltage >Two galvanic internal isolated Transistors in one package A R n 3 tr ETH "j>- Type Marking Ordering Code
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OCR Scan
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Q62702-C2372
OT-363
BC847S
transistor bc 499
1CS K2
marking 1cs
transistor Bc 580
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PDF
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Untitled
Abstract: No abstract text available
Text: MT4LC4M4B1 L 4 MEG X 4 DRAM MICRON 4 MEG x 4 DRAM DRAM 3.3V, FAST PAGE MODE, OPTIONAL EXTENDED REFRESH FEATURES PIN ASSIGNMENT (Top View) OPTIONS MARKING • Timing 60ns access 70ns access -6 -7 • Packages Plastic SOJ (300 mil) DJ • Refresh Rate Standard 32ms period
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OCR Scan
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128ms
24/26-Pin
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PDF
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jeida dram 88 pin
Abstract: dram card 68 pin
Text: PRELIMINARY t o i f m m iv i M T12D 88C 436 4 MEG x 36, 8 MEG x 18 IC DRAM CARD IC DRAM CARD 16 MEGABYTES 4 MEG x 36, 8 MEG x 18 FEATURES PIN ASSIGNMENT End View 88-Pin Card (DF-1) OPTIONS MARKING • Timing 60ns access 70ns access 80ns access -6 -7 -8 • Part Number Example: MT12D88C436-6
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OCR Scan
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88-pin
256ms
CaQ31
jeida dram 88 pin
dram card 68 pin
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PDF
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TRANSISTOR 2N338
Abstract: 2N338 2N337 SFWM marking YJ AM 2N3384 2N338 JAN zn338 2 TMT 15-4
Text: iiU M 'U 'ivuw / gva ¿2 H o v te ttr 1971 SUPERSEDING _ Û1LL.-0-lÖÖÖO/ÖWD 4 Mafflh tOM MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSBTOR, NPN, SILICON, LOW-POWER TYPES 2N337 AND 2N338 This specification la mandatory for use bv all Departmeats and Agencies of the Department of Defense.
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OCR Scan
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-8-19500/69K
MIL-S-19500/89D
2N337
2N338
MEL-8-19500,
MEL-S-19500
TRANSISTOR 2N338
2N338
SFWM
marking YJ AM
2N3384
2N338 JAN
zn338
2 TMT 15-4
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PDF
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5b1 transistor
Abstract: transistor 5b1 transistor bc qe TRANSISTOR MARKING TE SOT363 Marking 1cs sot marking 1cs FR1E marking code YA Transistor 6c2 transistor
Text: SIEMENS BC 847S NPN Silicon AF Transistor Array • For AF input stages and driver applications 4 • High current gain 6 • Low collector-emitter saturation voltage • Two galvanic internal isolated Transistors with high matching in one package 2 1 Type
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OCR Scan
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Q62702-C2372
OT-363
Mav-12-1998
BC847S
av-12-1998
5b1 transistor
transistor 5b1
transistor bc qe
TRANSISTOR MARKING TE SOT363
Marking 1cs sot
marking 1cs
FR1E
marking code YA Transistor
6c2 transistor
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PDF
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