zener diode zg
Abstract: ZG zener E35A21VBR E35A21VBS
Text: SEMICONDUCTOR E35A21VBS, E35A21VBR TECHNICAL DATA STACK SILICON DIFFUSED DIODE ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION. FEATURES A ・Average Forward Current : IO=35A. ・Zener Voltage : 21V Typ. POLARITY E35A21VBS (+ Type) : Mark : ZG E35A21VBR (- Type) : Mark : ZA
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E35A21VBS,
E35A21VBR
E35A21VBS
100mA,
100mS
zener diode zg
ZG zener
E35A21VBR
E35A21VBS
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79RC32364
Abstract: RC32364 DNA MARKING CODE
Text: Integrated Device Technology, Inc. 2975 Stender Way, Santa Clara, CA - 95054 PRODUCT/PROCESS CHANGE NOTICE PCN PCN #: M0005-07 Product Affected: 79RC32V364 DATE: June 6, 2000 MEANS OF DISTINGUISHING CHANGED DEVICES: Product Mark Back Mark Date Code Other
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M0005-07
79RC32V364
RC32364
BFC0-0000)
RC32364,
46323CR
79RC32364
DNA MARKING CODE
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Untitled
Abstract: No abstract text available
Text: Integrated Device Technology, Inc. 2975 Stender Way, Santa Clara, CA - 95054 PRODUCT/PROCESS CHANGE NOTICE PCN PCN #: DATE: I0007-05 Product Affected: 79RC32V364 August 6, 2000 MEANS OF DISTINGUISHING CHANGED DEVICES: Product Mark Back Mark Date Code Other
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I0007-05
79RC32V364
BFC0-0000)
RC32364,
RC32364
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ZG SOT-23
Abstract: ZG SOT23 KTN2222AS SOT-23 MARKING ZG SOT-23 KTN2222AS marking zg MARKING ZG sot 23 zG j1 zg marking sot 23 zG
Text: SEMICONDUCTOR KTN2222AS MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking No. 1 ZG 2 1 Item Marking Description Device Mark ZG KTN2222AS hFE Grade - - * Lot No. 01 2002. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method
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KTN2222AS
OT-23
ZG SOT-23
ZG SOT23
KTN2222AS SOT-23
MARKING ZG SOT-23
KTN2222AS
marking zg
MARKING ZG sot 23
zG j1
zg marking
sot 23 zG
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mark ZG
Abstract: KTN2222AU
Text: SEMICONDUCTOR KTN2222AU MARKING SPECIFICATION USM PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 ZG 1 2 Item Marking Description Device Mark ZG KTN2222AU hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method
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KTN2222AU
mark ZG
KTN2222AU
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KN2222AS
Abstract: No abstract text available
Text: SEMICONDUCTOR KN2222AS MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 ZGA 1 2 Item Marking Description Device Mark ZGA KN2222AS hFE Grade - - * Lot No. 01 1998. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method
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KN2222AS
OT-23
KN2222AS
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diode zener ZD 260
Abstract: KDZ12VV KDZ36VV sy 360 diode DIODE MARKING 9Y KDZ11VV KDZ13VV KDZ20VV diode zener ZL 27 KDZ33VV
Text: SEMICONDUCTOR KDZ2.0VV~36VV TECHNICAL DATA ZENER DIODE SILICON EPITAXIAL PLANAR DIODE CONSTANT VOLTAGE REGULATION APPLICATION. REFERENCE VOLTAGE APPLICATION. CATHODE MARK FEATURES Small Package : VSC C D Normal Voltage Tolerance about 1 2 Sharp Breakdown Characteristic.
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KDZ36VV
KDZ33VV
KDZ30VV
KDZ18VV
KDZ20VV
KDZ22VV
KDZ24VV
KDZ27VV
20x20mm
diode zener ZD 260
KDZ12VV
KDZ36VV
sy 360 diode
DIODE MARKING 9Y
KDZ11VV
KDZ13VV
KDZ20VV
diode zener ZL 27
KDZ33VV
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KDZ16VV
Abstract: diode zener ZD 150 diode zener ZD 260 diode zener ZD 36 marking zn diode marking zn DIODE MARKING 9Y
Text: SEMICONDUCTOR KDZ2.0VV~36VV TECHNICAL DATA ZENER DIODE SILICON EPITAXIAL PLANAR DIODE CONSTANT VOLTAGE REGULATION APPLICATION. REFERENCE VOLTAGE APPLICATION. CATHODE MARK FEATURES ・Small Package : VSC C D 1 2 ・Sharp Breakdown Characteristic. ・Normal Voltage Tolerance about ±6%.
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KDZ11VV
KDZ12VV
KDZ13VV
KDZ15VV
KDZ16VV
20x20mm
KDZ18VV
KDZ20VV
KDZ22VV
KDZ24VV
KDZ16VV
diode zener ZD 150
diode zener ZD 260
diode zener ZD 36
marking zn
diode marking zn
DIODE MARKING 9Y
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DIODE MARKING 9Y
Abstract: 9vv marking kdz16vv marking zn diode marking 4Y KDZ12VVY KDZ36VV diode zener ZD 260
Text: SEMICONDUCTOR KDZ2.0VV~36VV TECHNICAL DATA ZENER DIODE SILICON EPITAXIAL PLANAR DIODE CONSTANT VOLTAGE REGULATION APPLICATION. REFERENCE VOLTAGE APPLICATION. CATHODE MARK FEATURES ・Small Package : VSC C D 1 2 ・Sharp Breakdown Characteristic. ・Normal Voltage Tolerance about ±6%.
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KDZ11VV
KDZ12VV
KDZ13VV
KDZ15VV
KDZ16VV
20x20mm
KDZ18VV
KDZ20VV
KDZ22VV
KDZ24VV
DIODE MARKING 9Y
9vv marking
kdz16vv
marking zn
diode marking 4Y
KDZ12VVY
KDZ36VV
diode zener ZD 260
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diode gp 434
Abstract: RD07MVS2 diode zener 7.2v RD07MVS1 T112 318 MARKING DIODE
Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD07MVS2 OBSERVE HANDLING PRECAUTIONS RoHS Compliance,Silicon MOSFET Power Transistor,175MHz,520MHz,7W DESCRIPTION OUTLINE DRAWING 0.22 2.0+/-0.05 1.0+/-0.05 2 3.5+/-0.05 1 3 (0.25) INDEX MARK (Gate)
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RD07MVS2
175MHz
520MHz
520MHz
175MHz)
520MHz)
diode gp 434
RD07MVS2
diode zener 7.2v
RD07MVS1
T112
318 MARKING DIODE
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transistor rf m 1104
Abstract: No abstract text available
Text: < Silicon RF Power MOS FET Discrete > RD02MUS1 RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W DRAWING DESCRIPTION 0.2+/-0.05 specifically designed for VHF/UHF RF power 1 1.0+/-0.05 4.9+/-0.15 amplifiers applications. FEATURES 2 INDEX MARK
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RD02MUS1
175MHz
520MHz
RD02MUS1
175MHz,
520MHz
175MHz)
520MHz)
Oct2011
transistor rf m 1104
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Untitled
Abstract: No abstract text available
Text: < Silicon RF Power MOS FET Discrete > RD05MMP1 RoHS Compliance, Silicon MOSFET Power Transistor, 941MHz, 5.5W (a) OUTLINE DRAWING (b) (b) 7.0+/-0.2 0.2+/-0.05 RD05MMP1 is a MOS FET type transistor 0.65+/-0.2 DESCRIPTION 8.0+/-0.2 FEATURES (4.5) INDEX MARK
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RD05MMP1
941MHz,
RD05MMP1
941MHz
941MHz)
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MARK "326" FET
Abstract: transistor 3669
Text: < Silicon RF Power MOS FET Discrete > RD05MMP1 RoHS Compliance, Silicon MOSFET Power Transistor, 941MHz, 5.5W (a) OUTLINE DRAWING 7.0+/-0.2 0.2+/-0.05 RD05MMP1 is a MOS FET type transistor (b) (b) 0.65+/-0.2 DESCRIPTION 8.0+/-0.2 FEATURES (4.5) INDEX MARK
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RD05MMP1
941MHz,
RD05MMP1
941MHz
941MHz)
05Electric
Oct2011
MARK "326" FET
transistor 3669
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diode gp 434
Abstract: RD07MVS1 RD07MVS2 T112 07MVS1 PO520 zener gp 434
Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD07MVS2 RoHS Compliance,Silicon MOSFET Power Transistor,175MHz,520MHz,7W DESCRIPTION 2.0+/-0.05 2 INDEX MARK Gate For output stage of high power amplifiers In VHF/UHF band mobile radio sets.
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RD07MVS2
175MHz
520MHz
RD07MVS2-101
diode gp 434
RD07MVS1
RD07MVS2
T112
07MVS1
PO520
zener gp 434
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TRANSISTOR D 1765
Abstract: transistor mosfet 4425 1776 48T08 TRANSISTOR D 1765 720 T72 MARKING 1788
Text: < Silicon RF Power MOS FET Discrete > RD09MUP2 RoHS Compliance, Silicon MOSFET Power Transistor, 520MHz, 8W DESCRIPTION (a) (b) 7.0+/-0.2 0.2+/-0.05 FEATURES (4.5) INDEX MARK [Gate] 2.6+/-0.2 0.95+/-0.2 •High power gain: Pout>8W, Gp>10dB@Vdd=7.2V,f=520MHz
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RD09MUP2
520MHz,
RD09MUP2
520MHz
520MHz)
Oct2011
TRANSISTOR D 1765
transistor mosfet 4425
1776
48T08
TRANSISTOR D 1765 720
T72 MARKING
1788
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LT1ZE40A
Abstract: LT1ZG40A LT1ZJ40A LT1ZR40A LT1ZS40A LT1ZV40A ECG43
Text: Super-luminosity AlGaInP Leadless Chip LED LT1Z❏40A series 2125 Size, 0.8mm Thickness, Leadless Chip LED LT1Z❏40A series • Outline Dimensions (Unit : mm) ■ Directive Characteristics -20˚ 0.8 1.25 2.0 -60˚ 2 1 Cathode mark Recommended PWB pattern for soldering
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LT1Z40A
LT1ZE40A
LT1ZG40A
LT1ZJ40A
LT1ZR40A
LT1ZS40A
LT1ZV40A
ECG43
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GM5WA06250A
Abstract: LT1ZE40A LT1ZG40A LT1ZJ40A LT1ZR40A LT1ZS40A LT1ZV40A
Text: Super-luminosity AlGaInP Leadless Chip LED LT1Z❏40A series 2125 Size, 0.8mm Thickness, Leadless Chip LED LT1Z❏40A series • Outline Dimensions (Unit : mm) ■ Directive Characteristics -20˚ 0.8 1.25 2.0 -60˚ 2 1 Cathode mark Recommended PWB pattern for soldering
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LT1Z40A
GM5WA06250A
LT1ZE40A
LT1ZG40A
LT1ZJ40A
LT1ZR40A
LT1ZS40A
LT1ZV40A
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GM5HD95200A
Abstract: GM5HY95200A GM5UR95200A GM5EG95200A
Text: Leadless Chip LED GM5❏❏95200A series 3528 Size, 1.9mm Thickness, Leadless Chip LED GM5❏❏95200A series • Outline Dimensions ■ Radiation Diagram Unit : mm (Ta=25˚C) 3.5 3.2 2.4 2.8 2.2 -20˚ Cathode mark Relative luminous intensity(%) 0.7 -40˚
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GM5tt95200A
GM5UR95200A:
GM5UR95200A
GM5HD95200A
GM5HD95200A
GM5HY95200A
GM5UR95200A
GM5EG95200A
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WPCE775LA0DG
Abstract: oz8116 RTS5159 OZ8116LN oz8116l wpce775la winbond wpce775la0dg G780-1P81U N10M-GE1 G780
Text: 5 4 3 2 1 ZR6 SYSTEM BLOCK DIAGRAM BOM MARK IV@: INT VGA DDR3 PWR TPS51116 EV@: STUFF FOR EXT VGA D THERMAL PROTECTION X'TAL 14.318MHz SP@: STUFF FOR UMA or VGA Penryn 479 REV:C uFCPGA CLOCK GENERATOR ICS: SELGO: SLG8SP512TTR Fan Driver Thermal Sensor G780-1P81U
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318MHz
TPS51116
ISL6251
ISL6237
SLG8SP512TTR
G780-1P81U)
OZ8118
OZ8116LN
UP6111AQDD
N10M-GE1
WPCE775LA0DG
oz8116
RTS5159
OZ8116LN
oz8116l
wpce775la
winbond wpce775la0dg
G780-1P81U
N10M-GE1
G780
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NEh jJ8
Abstract: k30270 LB 11911 095275-VK20BA ue09 KM 7-C 1 UF -20 100V 74S83 S0807 74LS32N z3ans
Text: R E V IS IO N S DESCRIPT'ON » * * LTR MARK AM*« P iK PXÛC1S1 Z v cmpcz procgsz z. 2 PL J L MARK PEU PE0C£5S J p 6 H A A # i WAS 9?Z7£9-toZW E 6 m * T £ D * £ / i £ r £ t d i0 £ # i/ tty * * ¡è k w - ¿ A J 4 0 1 6 9 / & J / O / i. — to * D D £ D
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57-flrUS
t4133)
944i3i-qq5l1
f94C93/-i-Cd)
2N2222
470PF
NEh jJ8
k30270
LB 11911
095275-VK20BA
ue09
KM 7-C 1 UF -20 100V
74S83
S0807
74LS32N
z3ans
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diode zener ZD 36
Abstract: zener diode, zl 33 DIODE MARKING 9Y zener diode zg 36 diode marking 4Y diode zener ZL 30 diode zener ZD 15 diode zener ZL 15 zener diode BZ 22 zener diode, zl 22
Text: KDZ2.0W-36W SEM ICONDUCTOR ZENER DIODE SILICON EPITAXIAL PLANAR DIODE TECHNICAL DATA r CONSTANT VOLTAGE REGULATION APPLICATION. REFERENCE VOLTAGE APPLICATION. CATHODE MARK FEATURES • Small Package : VSC • Sharp Breakdown Characteristic. • Normal Voltage Tolerance about ±6% .
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W-36W
20x20m
diode zener ZD 36
zener diode, zl 33
DIODE MARKING 9Y
zener diode zg 36
diode marking 4Y
diode zener ZL 30
diode zener ZD 15
diode zener ZL 15
zener diode BZ 22
zener diode, zl 22
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MAAM02350-A2G
Abstract: No abstract text available
Text: VMfccöM w an A M P com pany Wide Band GaAs MMIC Amplifier 0.2 - 3.0 GHz Features MAAM02350-A2 CR-3 • High Gain: IK d B • Output Pow er: ORIENTATION MARK ] +1 dBm • G o o d Noise Figure: \ I (IB • Single Supply: +6 V 3 Equal Spaces @ 0.050(1.27
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MAAM02350-A2
100Pf!
10OpF
MAAM02350-A2G
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4. 7k ohm zener diode
Abstract: 1SZ56-30 1SZ56-07 AU01-15 1sz56
Text: Titachi/-coptoelectronics> • "J i -f— Ea de | MMTbEos □Docia4a y f r- h / s ' # — K (Zener Diode X AUOl S V Z : 7 V -3 3 V P :2 .5 W ¿5MAX (0.196) CM vqy Cathode band (Red) Weight : 1.0 (g) Unit in mm(inch) Type mark (Red) • MAXIMUM ALLOW ABLE R ATING S
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i-165
4. 7k ohm zener diode
1SZ56-30
1SZ56-07
AU01-15
1sz56
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KDZ20VV
Abstract: No abstract text available
Text: SEM ICONDUCTOR KDZ2.0W -36W TE CHNICAL DATA ZENER DIODE SILICON EPITAXIAL PLANAR DIODE CO N ST A N T V O L T A G E REG U LATIO N A PPLICATIO N. R EFEREN CE V O L T A G E A PPLICATION. r CATHOD E MARK FEA T U RE S • Small Package : VSC • Sharp Breakdown Characteristic.
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