2SC2734
Abstract: 2SC4264 2S*4264 DSA003637
Text: 2SC4264 Silicon NPN Epitaxial ADE-208-1101A Z 2nd. Edition Mar. 2001 Application VHF / UHF RF amplifier, Local oscillator, Mixer Outline CMPAK 3 1 2 Note: Marking is “GC”. 1. Emitter 2. Base 3. Collector 2SC4264 Absolute Maximum Ratings (Ta = 25°C)
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2SC4264
ADE-208-1101A
2SC2734
2SC4264
2S*4264
DSA003637
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2SC2735
Abstract: 2SC4265 DSA003637
Text: 2SC4265 Silicon NPN Epitaxial ADE-208-1102A Z 2nd. Edition Mar. 2001 Application VHF RF amplifier, Local oscillator, Mixer Outline CMPAK 3 1 2 Note: Marking is “JC”. 1. Emitter 2. Base 3. Collector 2SC4265 Absolute Maximum Ratings (Ta = 25°C) Item Symbol
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2SC4265
ADE-208-1102A
2SC2735
2SC4265
DSA003637
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3sk298
Abstract: DSA003642
Text: 3SK298 Silicon N-Channel Dual Gate MOS FET ADE-208-390A Z 2nd. Edition Mar. 2001 Application UHF / VHF RF amplifier Features • Low noise figure. NF = 1.0 dB typ. at f = 200 MHz • Capable of low voltage operation Outline CMPAK–4 2 3 1 4 Note: 1. Source
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3SK298
ADE-208-390A
3sk298
DSA003642
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3SK296
Abstract: DSA003641
Text: 3SK296 Silicon N-Channel Dual Gate MOS FET ADE-208-388A Z 2nd. Edition Mar. 2001 Application UHF RF amplifier Features • Low noise figure. NF = 2.0 dB Typ. at f = 900 MHz • Capable of low voltage operation Outline CMPAK–4 2 3 1 4 Note: 1. Source 2. Gate1
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3SK296
ADE-208-388A
3SK296
DSA003641
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3SK295
Abstract: DSA003641
Text: 3SK295 Silicon N-Channel Dual Gate MOS FET ADE-208-387A Z 2nd. Edition Mar. 2001 Application UHF RF amplifier Features • Low noise figure. NF = 2.0 dB typ. at f = 900 MHz • Capable of low voltage operation Outline MPAK-4 2 3 1 4 Note: 1. Source 2. Gate1
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3SK295
ADE-208-387A
3SK295
DSA003641
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3SK297
Abstract: DSA003642
Text: 3SK297 Silicon N-Channel Dual Gate MOS FET ADE-208-389A Z 2nd. Edition Mar. 2001 Application UHF / VHF RF amplifier Features • Low noise figure. NF = 1.0 dB typ. at f = 200 MHz • Capable of low voltage operation Outline MPAK-4 2 3 1 4 Note: 1. Source
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3SK297
ADE-208-389A
3SK297
DSA003642
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Hitachi DSA0076
Abstract: 1SV70 BB303C SOT343 C5 K-806
Text: BB303C Build in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier ADE-208-698B Z 3rd. Edition Mar. 2001 Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • High forward transfer admittance; (|yfs| = 42 mS typ. at f = 1 kHz)
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BB303C
ADE-208-698B
200pF,
OT-343
BB303C
Hitachi DSA0076
1SV70
SOT343 C5
K-806
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Hitachi DSA0076
Abstract: 1SV70 BB403M
Text: BB403M Build in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier ADE-208-699B Z 3rd. Edition Mar. 2001 Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • High forward transfer admittance; (|yfs| = 42 mS typ. at f = 1 kHz)
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BB403M
ADE-208-699B
200pF,
OT-143
BB403M
Hitachi DSA0076
1SV70
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PDF
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Hitachi DSA0076
Abstract: 1SV70 BB303M
Text: BB303M Build in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier ADE-208-697B Z 3rd. Edition Mar. 2001 Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • High forward transfer admittance; (|yfs| = 42 mS typ. at f = 1 kHz)
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BB303M
ADE-208-697B
200pF,
OT-143R
BB303M
Hitachi DSA0076
1SV70
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Untitled
Abstract: No abstract text available
Text: 28.0-31.0 GHz GaAs MMIC Power Amplifier P1025-BD March 2007 - Rev 05-Mar-07 Features Ka-Band 1 W Power Amplifier 27.0 dB Small Signal Gain +30.0 dBm Saturated Output Power 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883
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P1025-BD
05-Mar-07
MIL-STD-883
XP1025-BD
XP1025-BD-000V
XP1025-BD-EV1
XP1025-BD
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P1025-BD
Abstract: 30MPA0562 DM6030HK TS3332LD XP1025-BD XP1025-BD-000V ka-band bare
Text: 28.0-31.0 GHz GaAs MMIC Power Amplifier P1025-BD March 2007 - Rev 05-Mar-07 Features Ka-Band 1 W Power Amplifier 27.0 dB Small Signal Gain +30.0 dBm Saturated Output Power 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883
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P1025-BD
05-Mar-07
MIL-STD-883
XP1025-BD
XP1025-BD-000V
XP1025-BD-EV1
XP1025-BD
P1025-BD
30MPA0562
DM6030HK
TS3332LD
XP1025-BD-000V
ka-band bare
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3sk300
Abstract: DB64 DSA003642
Text: 3SK300 Silicon N Channel Dual Gate MOS FET UHF / VHF RF Amplifier ADE-208-449A Z 2nd. Edition Mar. 2001 Features • Low noise figure NF = 1.0 dB typ. at f = 200 MHz • High gain PG = 27.6 dB typ. at f = 200 MHz Outline MPAK-4 2 3 1 4 Note: Marking is “ZR–”
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3SK300
ADE-208-449A
3sk300
DB64
DSA003642
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POWER MINIMOLD marking code renesas
Abstract: NESG340033-A NESG340033
Text: PreliminaryData Sheet NESG340033 R09DS0016EJ0100 Rev.1.00 Mar 29, 2011 NPN Silicon Germanium RF Transistor DESCRIPTION The NESG340033 is an ideal choice for low noise, low distortion amplification. FEATURES • • • • • • • NF = 0.65 dB TYP. @ VCE = 3.3 V, IC = 15 mA, f = 1 GHz
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NESG340033
NESG340033
R09DS0016EJ0100
POWER MINIMOLD marking code renesas
NESG340033-A
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors RF transmitting transistor and power amplifier fundamentals 5 Symbols SYMBOLS Table 5-1 α βl γ εr ε ηc λ ω ωT A B C Cc Cre Cis Cos Crs Cp Cs d E SBR f fT G g gfs hFE hfe IC ICM ID IDSX k L Lp Ls 1998 Mar 23 Coefficient of linear thermal expansion
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60Ghz
Abstract: MGF0915A a4013
Text: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0915A L & S BAND GaAs FET [ SMD non - matched ] DESCRIPTION The MGF0915A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=36.5 dBm TYP. @f=1.9GHz,Pin=23dBm
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MGF0915A
MGF0915A
23dBm
50pcs)
60Ghz
a4013
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60Ghz
Abstract: MGF0952P 211G idq042a
Text: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0952P L & S BAND GaAs FET [ Plastic Mold Lead-less PKG ] DESCRIPTION The MGF0952P GaAs FET with an N-channel schottky Gate, is designed for use L/S band amplifiers. FEATURES • High output power Po=36.5dBm TYP. @f=2.15GHz,Pin=25Bm
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MGF0952P
MGF0952P
15GHz
15GHz
25dBm
700mA
60Ghz
211G
idq042a
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Untitled
Abstract: No abstract text available
Text: TGC4403-SM 8 - 15 GHz Packaged Doubler with Amplifier Key Features • • • • • • • Measured Performance Bias conditions: Vd = 5 V, Id = 150 mA, Vdbl = -0.8 V, Vg = -0.5 V Typical RF Output Frequency Range: 16-30 GHz Input Frequency Range: 8 - 15 GHz
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TGC4403-SM
TGC4403-SM
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0951P
Abstract: MGF0951P 60Ghz mitsubishi mgf
Text: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0951P L & S BAND GaAs FET [ Plastic Mold Lead-less PKG ] DESCRIPTION The MGF0951P GaAs FET with an N-channel schottky Gate, is designed for use L/S band amplifiers. FEATURES • High output power Po=31dBm TYP. @f=2.15GHz,Pin=20dBm
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MGF0951P
MGF0951P
31dBm
15GHz
20dBm
15GHz
200mA
0951P
60Ghz
mitsubishi mgf
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TGC4403-SM
Abstract: IRL 1630
Text: TGC4403-SM 8 - 15 GHz Packaged Doubler with Amplifier Key Features • • • • • • • Measured Performance Pout at 2x Input Freq dBm 30 Primary Applications Bias conditions: Vd = 5 V, Id = 150 mA, Vdbl = -0.8 V, Vg = -0.5 V Typical Point-to-Point Radio
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TGC4403-SM
TGC4403-SM
IRL 1630
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Untitled
Abstract: No abstract text available
Text: TGA2525 2-18 GHz Low Noise Amplifier with AGC Key Features • • • • • • • • • • Measured Performance Primary Applications • • • 10 20 9 18 8 16 7 NF 14 6 Gain 12 5 10 4 8 3 6 2 4 1 2 4 6 8 10 12 14 16 18 Gain, IRL, ORL dB Frequency (GHz)
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TGA2525
0007-inch
TGA2525
EAR99
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RA60H1317M1A
Abstract: RA60H1317M1 RF MOSFET MODULE RF MODULE RA60H1317M1A rf transistor mar 8 MITSUBISHI marking example 174MHZ marking code transistor ND F1361 MAR 601 transistor
Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA60H1317M1A RoHS Compliance ,136-174MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA60H1317M1A is a 60-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 136- to
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RA60H1317M1A
136-174MHz
RA60H1317M1A
60-watt
174-MHz
RA60H1317M1
RF MOSFET MODULE
RF MODULE RA60H1317M1A
rf transistor mar 8
MITSUBISHI marking example
174MHZ
marking code transistor ND
F1361
MAR 601 transistor
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RF Power transistor
Abstract: TV power transistor datasheet MSC638 BLV59 MBK442 MSC643 POWER transistor rf power transistors MDA505 TRANSISTOR 2132
Text: Philips Semiconductors RF transmitting transistor and power amplifier fundamentals 2 RF power transistors characteristics RF POWER TRANSISTOR CHARACTERISTICS 2.1 This section describes how to interpret and use the data published by Philips Semiconductors on its transmitting
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BLV59,
BLV59
RF Power transistor
TV power transistor datasheet
MSC638
BLV59
MBK442
MSC643
POWER transistor
rf power transistors
MDA505
TRANSISTOR 2132
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TDFN8
Abstract: DS6205 EUA6205 EUA6205JIR1 EUA6205MIR1 amplifier 32 ohm 200mW low thd mar 716
Text: EUA6205 1.25-W Mono Fully Differential Audio Power Amplifier with 1.8V Input Logic Thresholds FEATURES DESCRIPTION z z z z z z Supply Voltage 2.5V to 5.5V 1.25W into 8Ω from a 5-V Supply at THD=1% typ Shutdown Pin has 1.8V Compatible Thresholds Low Supply Current: 3.4mA Typical
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EUA6205
EUA6205
DS6205
TDFN8
EUA6205JIR1
EUA6205MIR1
amplifier 32 ohm 200mW low thd
mar 716
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PDF
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bc337 TRANSISTOR equivalent
Abstract: TRANSISTOR C875, PIN TRANSISTOR C875 BC337 SOT-103 rf transistor mar 8 C875 transistor BC337 SPICE MJE 340 transistor transistor SOT103
Text: Philips Semiconductors Product specification NPN 2 GHz RF power transistor BLT10 FEATURES DESCRIPTION • High power gain NPN silicon planar epitaxial transistor encapsulated in a 4-pin, dual-emitter SOT 103 plastic package. • High efficiency • Small size discrete power amplifier
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BLT10
OT103
MSB037
OT103.
711002b
bc337 TRANSISTOR equivalent
TRANSISTOR C875, PIN
TRANSISTOR C875
BC337
SOT-103
rf transistor mar 8
C875 transistor
BC337 SPICE
MJE 340 transistor
transistor SOT103
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