KA2295Q
Abstract: 3543 stereo amp 48QFP 6800P KA2295 48-QFP-1010E AM SW1 sw2 IC 145mHz 28 pin samsung am fm tuner
Text: KA2295 AM/FM TUNER + MPX INTRODUCTION The KA2295 is a monolithic intergrated circuit desiged for DTS music center. It includes AM/FM IF AMP, FM Quad DET, AM, DET, MAPX function 48-QFP-1010D/1010E FEATURES • Wide operating supply voltage VCC = 6V ~ 12V
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KA2295
KA2295
48-QFP-1010D/1010E
48-QFP-1010D
KA2295Q
48-QFP-1010E
6800P
KA2295Q
3543 stereo amp
48QFP
6800P
48-QFP-1010E
AM SW1 sw2 IC
145mHz
28 pin samsung am fm tuner
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digital dts dolby 5.1 ic
Abstract: hdcd RCA FM Receiver Circuits CDB42518 CP1201 CS42518 CS42518-CQZ CS42518-DQZ IEC60958 IEC-60958
Text: CS42518 110 dB, 192 kHz 8-Ch Codec with S/PDIF Receiver Features General Description z Eight 24-bit D/A, two 24-bit A/D Converters The CS42518 codec provides two analog-to-digital and eight digital-to-analog delta-sigma converters, as well as an integrated S/PDIF receiver, in a 64-pin LQFP package.
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CS42518
24-bit
CP1201
IEC-60958
/-15dB
CS42518
DS584PP5
digital dts dolby 5.1 ic
hdcd
RCA FM Receiver Circuits
CDB42518
CP1201
CS42518-CQZ
CS42518-DQZ
IEC60958
IEC-60958
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5AGXFB3H4F35C5
Abstract: UG-01062-4 EP4CGX150DF31 5AGX vhdl code lte vhdl code scrambler 5SGXE 5SGXEA7N3F45C4 cyclone4 EP2AGX260FF35
Text: CPRI MegaCore Function User Guide CPRI MegaCore Function User Guide 101 Innovation Drive San Jose, CA 95134 www.altera.com UG-01062-4.1 Document last updated for Altera Complete Design Suite version: Document publication date: 11.1 November 2011 Subscribe
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UG-01062-4
5AGXFB3H4F35C5
EP4CGX150DF31
5AGX
vhdl code lte
vhdl code scrambler
5SGXE
5SGXEA7N3F45C4
cyclone4
EP2AGX260FF35
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Untitled
Abstract: No abstract text available
Text: MC68HC908LB8 Data Sheet M68HC08 Microcontrollers MC68HC908LB8 Rev. 1 8/2005 freescale.com MC68HC908LB8 Data Sheet To provide the most up-to-date information, the revision of our documents on the World Wide Web will be the most current. Your printed copy may be an earlier revision. To verify you have the latest information
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MC68HC908LB8
M68HC08
MC68HC908LB8
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cs42528
Abstract: CDB42528 CP1201 CS42528-CQ CS42528-CQZ CS42528-DQZ IEC-60958 464A 464-E
Text: CS42528 114 dB, 192 kHz 8-Ch Codec with S/PDIF Receiver Features General Description z Eight 24-bit D/A, two 24-bit A/D Converters z 114 dB DAC / 114 dB ADC Dynamic Range z -100 dB THD+N z System Sampling Rates up to 192 kHz z S/PDIF Receiver compatible with EIAJ
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CS42528
24-bit
CP1201
IEC-60958
/-15dB
CS42528
CDB42528
CS42528-CQ
CS42528-CQZ
CS42528-DQZ
IEC-60958
464A
464-E
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10VA
Abstract: CDB42428 CS42428 CS42428-CQ CS42428-CQZ CS42428-DQ CS42428-DQZ
Text: CS42428 114 dB, 192 kHz 8-Ch Codec with PLL Features General Description z Eight 24-bit D/A, two 24-bit A/D Converters z 114 dB DAC / 114 dB ADC Dynamic Range z -100 dB THD+N z System Sampling Rates up to 192 kHz z Integrated low-jitter PLL for increased system
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CS42428
24-bit
/-15dB
CS42428
10VA
CDB42428
CS42428-CQ
CS42428-CQZ
CS42428-DQ
CS42428-DQZ
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CDB42428
Abstract: CS42426 CS42426-CQZ CS42426-DQZ CS5361 CS8416 cs1039
Text: CS42426 114 dB, 192 kHz 6-Ch Codec with PLL Features General Description ! Six 24-bit D/A, two 24-bit A/D Converters The CS42426 codec provides two analog-to-digital and six digital-to-analog delta-sigma converters, as well as an integrated PLL. ! 114 dB DAC / 114 dB ADC Dynamic Range
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CS42426
24-bit
CS42426
DS604F1
CDB42428
CS42426-CQZ
CS42426-DQZ
CS5361
CS8416
cs1039
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BF747
Abstract: MBB400 DB64 transistor HJ 388
Text: Philips Sem iconductors — bb53^31 00E4bfll l ? 5 N AMER P H IL IPS /D IS CR ET E MAPX b?E Product specification NPN 1 GHz wideband transistor FEATURES £ BF747 PINNING • Stable oscillator operation PIN DESCRIPTION Code: E15 • High current gain • Good thermal stability.
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bb53-J31
00E4bÃ
BF747
BF747
MBB400
DB64
transistor HJ 388
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE bR E bbS3T31 DDEbSIS b T l MAPX BY627 » M AINTENANC E TYPE _ ; v _ CONTROLLED AVALANCHE RECTIFIER DIODES Glass passivated rectifier diode in hermetically sealed axial-leaded ID * envelope capable o f absorbing
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bbS3T31
BY627
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BU2522AF
Abstract: BY228
Text: N AMER PHILIPS/DISCRETE b*ïE D • bbS3^31 002ôbi4ê Philips Sem iconductors SOS MAPX Product specification Silicon diffused power transistor BU2522AF GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended
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BU2522AF
BU2522AF
BY228
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motorola transistor 5331
Abstract: BFQ268
Text: Philips Semiconductors bbS3T31 DD317LÛ 64^ MAPX NPN 1 GHz video transistor ^ BFQ268; BFQ268/I N DESCRIPTION Product specification AMER PHILIPS/DISCRETE b^E D - PINNING NPN silicon epitaxial transistor with emitter-ballasting resistors and a gold sandwich metallization to
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bbS3T31
DD317bÃ
BFQ268;
BFQ268/I
BFQ268
OT172A1)
BFQ268/I
OT172A3
motorola transistor 5331
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Untitled
Abstract: No abstract text available
Text: Philip^emiconductors • bbSBTBl D O B E l ? 1! OEb MAPX Product specification PNP 1 GHz switching transistor “ MPS3640 N AMER PHILIPS/DISCRETE DESCRIPTION b^E T> PINNING PNP general purpose switching transistor in a SOT54 TO-92 envelope. PIN 1 DESCRIPTION
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MPS3640
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors bbS B 'JB l DDB lH fiS IfiS MAPX Product specification NPN 5 GHz wideband transistor BFP96 N AMER PHILIPS/DISCRETE DESCRIPTION bRE T> PINNING NPN transistor in hermetically sealed sub-miniature SOU 73 and SOT173X micro-stripline envelopes.
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BFP96
OT173X
BFQ32C.
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2322151
Abstract: M8807 philips 2222 115 13102 BLF221B URA310 philips resistor 2322 BLF221
Text: tjbS3R31 Philips Sem iconductors OQE^Ql 101 MAPX Preliminary specification HF/VHF power MOS transistor BLF221B N AMER PHILIPS/DISCRETE FEATURES b=JE » PIN CONFIGURATION • High power gain • Easy power control • Gold metallization • Good thermal stability
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bbS3T31
BLF221B
MSB009-
MBA379
URA310
2322151
M8807
philips 2222 115 13102
BLF221B
URA310
philips resistor 2322
BLF221
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philips resistor 2322 763
Abstract: bfg97 scattering BFG97 D 1413 transistor BFG31 UBB774 PH ON 823 TRANSISTOR BFg97 24C1S
Text: Philips Sem iconductors — — — • bba oosmtid mapx Product specification N AMER P H I L I P S / D I S C R E T E ti7E D NPN 5 GHz wideband transistor DESCRIPTION BFG97 PINNING NPN planar epitaxial transitor mounted in a plastic SOT223 envelope. It features excellent output voltage
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BFG97
OT223
BFG31.
OT223
philips resistor 2322 763
bfg97 scattering
BFG97
D 1413 transistor
BFG31
UBB774
PH ON 823
TRANSISTOR BFg97
24C1S
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BFQ65
Abstract: No abstract text available
Text: Philips Semiconductors b b 53^31 QQ31S R T bSQ MAPX Product specification NPN 8 GHz wideband transistor ^ ^ N DESCRIPTION a HER BFQ65 PHILIPS/DISCRETE b'lE D PINNING NPN transistor in a plastic SOT37 envelope. It is designed for wideband application in the GHz
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QQ31S
BFQ65
BFQ65
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Cathode indicated by blue band
Abstract: BY712 BY713 BY714
Text: b'ìE D m b h s a ^ a i DDEbse? d i e N AMER PHILIPS/DISCRETE I I mapx A II by712 BY714 SILICON E.H.T. SOFT-RECOVERY RECTIFIER DIODES* E.H .T. re c tifie r diodes in glass envelopes intended fo r use in high-voltage a pplications such as the highvoltage supply o f television receivers and m on ito rs. The devices feature non-snap-off characteristics.
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BY712
BY713
BY714
TZ650B2
Cathode indicated by blue band
BY714
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BUK555-100A
Abstract: BUK555-100B T0220AB
Text: N AUER PHILIPS/DISCRETE b'lE J> m bbS3T31 0030610 T ib MAPX Philips Semiconductors Product Specification PowerMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope. The device is intended for use in
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bbS3T31
BUK555-100A/B
T0220AB
BUK555
-100A
-100B
BUK555-100A
BUK555-100B
T0220AB
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MAKING CODE 1H sod
Abstract: No abstract text available
Text: TMS34094 ISA BUS INTERFACE S PV S 006A - FEBRUARY 1992 - REVISED JUNE 1992 • Simplifies Design of High-Performance ISA PC Graphics Systems • Single-Integrated Circuit Interfaces TMS34020 to ISA Bus • Conforms to ISA Portions of the EISA Rev. 3.11 Specifications
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TMS34094
TMS34020
16-Bit
160-PIN
MAKING CODE 1H sod
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Untitled
Abstract: No abstract text available
Text: TMS34094 ISA BUS INTERFACE S P V S 0 0 6 A -F E B R U A R Y 1 9 9 2 - R E V IS E D JU NE 1992 160-PIN PC PLASTIC QUAD-FLAT PACKAGE EIAJ (TOP VIEW) Simplifies Design of High-Performance ISA PC Graphics Systems 160 Single-Integrated Circuit Interfaces TMS34020 to ISA Bus
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TMS34094
160-PIN
TMS34020
16-Bit
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Untitled
Abstract: No abstract text available
Text: I N AflER PHILIPS/DISCRETE I bb53R31 DDSflS3fl T3T blE D B U 505 BU505D SILICON DIFFUSED POWER TRANSISTOR High-voltage, high-speed switching npn power transistor in a TO-220 envelope intended fo r use in horizontal deflection circuits o f colour television receivers. The BU505D has an integrated efficiency
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bb53R31
BU505D
O-220
BU505D
BU505D)
bbS3T31
0D26243
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BFG32
Abstract: No abstract text available
Text: P h ilip s Sem iconductors b b SB ^ B l O O B im b 7^5 • Product specification APX £ PNP 5 GHz wideband transistor BFG32 N AMER PHILIPS/DISCRETE DESCRIPTION b^E D PINNING PNP transistor in a four-lead dual-emitter plastic SOT103 envelope. It is designed for application in
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BFG32
OT103
BFG96.
BFG32
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bc177
Abstract: No abstract text available
Text: | N AMER PHILIPS/DISCRETE b'lE D bb53T31 Q0S7513 415 H A P X BC177 to 179 A.F. SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors in TO-18 metal envelopes with the collector connected to the case. The BC177 is a high-voltage type and primarily intended for use in driver stages of audio amplifiers
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bb53T31
Q0S7513
BC177
BC178
BC179
BC107,
0Q27S20
DD275S1
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Untitled
Abstract: No abstract text available
Text: N AUER PHILIPS/DISCRETE blE P • bbSSTSl 0 Q 3 D 7 fl5 T3 Q M A P X Philips Semiconductors Product Specification PowerMOS transistor BUK552-100A/B Logic level GENERAL DESCRIPTION N-channel enhancement mode
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BUK552-100A/B
O220AB
BUK552
bb53T31
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