magnetic sensor
Abstract: Magnetic Field Sensor DM-231
Text: DM-231 Magnetoresistance Element For the availability of this product, please contact the sales office. Description DM-231 a magnetic sensor using magnetoresistance effect is composed of ferromagnetic material deposited by evaporation on a silicon substrate. It is
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DM-231
DM-231
M-118
4400A/m
magnetic sensor
Magnetic Field Sensor
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Magnetic Field Sensor
Abstract: max 232 DM-232
Text: DM-232 Magnetoresistance Element For the availability of this product, please contact the sales office. Description DM-232 a magnetic sensor using magnetoresistance effect is composed of ferromagnetic material deposited by evaporation on a silicon substrate. It is
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DM-232
DM-232
M-118
4400A/m
Magnetic Field Sensor
max 232
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DM 321
Abstract: DM106B 106B SONY DM-106B DM-106B E6014 1rb2 Thin-film magnetic resistance
Text: DM-106B Magnetoresistance Element For the availability of this product, please contact the sales office. Description The DM-106B is a highly sensitive magnetoresistance element composed of an evaporated ferromagnetic alloy on a silicon substrate. The element can be used for automatic shut off of tape
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DM-106B
DM-106B
M-110
DM 321
DM106B
106B
SONY DM-106B
E6014
1rb2
Thin-film magnetic resistance
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nve magnetoresistance
Abstract: AAT001-10E position sensor SB-00-024 TMR Sensor AAT001 angle position sensors
Text: Data Sheet AAT001-10E TMR Angle Sensor Key Features • Tunneling Magnetoresistance TMR Technology • Very High Output Signal Without Amplification • Wide Airgap Tolerance • Very High Resistance for Extremely Low Power • Sine and Cosine Outputs Available
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AAT001-10E
SB-00-024;
nve magnetoresistance
position sensor
SB-00-024
TMR Sensor AAT001
angle position sensors
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Tunneling Magnetoresistance
Abstract: AAT001-10E
Text: Data Sheet AAT001-10E TMR Angle Sensor Key Features • Tunneling Magnetoresistance TMR Technology • Very High Output Signal Without Amplification • Wide Airgap Tolerance • Very High Resistance for Extremely Low Power • Sine and Cosine Outputs for Direction Detection
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AAT001-10E
Tunneling Magnetoresistance
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Angle sensor magnetoresistance
Abstract: SB-00-024 AAT001-10E TMR Sensor AAT001 nve magnetoresistance Tunneling Magnetoresistance Position Sensors
Text: Data Sheet AAT001-10E TMR Angle Sensor Key Features • Tunneling Magnetoresistance TMR Technology • Very High Output Signal Without Amplification • Wide Airgap Tolerance • Very High Resistance for Extremely Low Power • Sine and Cosine Outputs Available
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AAT001-10E
SB-00-024;
Angle sensor magnetoresistance
SB-00-024
TMR Sensor AAT001
nve magnetoresistance
Tunneling Magnetoresistance
Position Sensors
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Untitled
Abstract: No abstract text available
Text: Data Sheet AAT001-10E TMR Angle Sensor Key Features • Tunneling Magnetoresistance TMR Technology • Very High Output Signal Without Amplification • Wide Airgap Tolerance • Very High Resistance for Extremely Low Power • Sine and Cosine Outputs for Direction Detection
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AAT001-10E
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MA 7805 tesla
Abstract: TESLA MA 7805 relative permittivity of permalloy ring core permalloy bh curve Anisotropic magnetoresistance compass angle position sensors relative magnet permeability ring core permalloy curve 7805 n-p-n transistor right siemens wheel speed sensor PWM
Text: Magnetoresistance MR Transducers And How to Use Them as Sensors 1st. Edition, July 2004 Perry A. Holman, Ph.D. ii Copyright c 2004 Honeywell International Inc. All rights reserved. Acknowledgments The author would like to thank Dr. James R. (Bob) Biard for many, many late night
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Planar Coil
Abstract: KMR360 HL-Planartechnik Magnetic Field Sensor kmr h 9740 Anisotropic magnetoresistance KMR36 transistor 9740
Text: Magnetic Field Sensor KMR 360 preliminary General Description The KMR 360 is a new patented development by HL Planartechnik GmbH. This magnetic field sensor utilizing the anisotropic magnetoresistance effect. The sensor contains three Wheatstone bridges rotated by 120°. A rotating magnetic field (strength > 25 kA/m in the sensor plane) will result in three
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KMR360
Planar Coil
HL-Planartechnik
Magnetic Field Sensor kmr
h 9740
Anisotropic magnetoresistance
KMR36
transistor 9740
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magnetic resistance element
Abstract: DC12V
Text: MR Sensors TDM Series Magneto-Resistance Device High-Sensitivity in Weak Magnetic Fields and High-Speed Response Capability are Offered Together FEATURES ¡ Compact and light weight. ¡ Ferromagnetic thin films made from a permalloy or a nickel-cobalt alloy as an element
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35tensity
TDM0203
magnetic resistance element
DC12V
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81116
Abstract: 81-116
Text: sony . DM-233 Magnetoresistance Element Description DM-233 a magnetic sensor using magnetoresistance effect is composed of ferromagnetic material deposited by evaporation on a silicon substrate.lt is suitable for angle of rotation detection. Package Outline
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DM-233
150mVp-p
DM-233
81116
81-116
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Magnetoresistance and sensor
Abstract: DM-230
Text: SONY CORP/COMPONENT PRODS 4RE Ö3ÖE303 D 000315b 5 DM-230 S O N Y . Magnetoresistance Element Description Package Outline Unit: mm DM-230 a magnetic sensor using magnetoresistance effect is composed of ferromagnetic material deposited by evaporation on a silicon substrate.lt is
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000315b
DM-230
DM-230
150mVp-p
Magnetoresistance and sensor
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PUT marking
Abstract: DM-230
Text: DM-230 S O N Y . Magnetoresistance Element Description Package Outline U n it: m m DM-230 a m agnetic sensor using magnetoresistance e ffect is composed of ferrom agnetic m aterial deposited by evaporation on a silicon substrate.lt is suitable fo r angle o f rotation detection and number
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DM-230
DM-230
150mVp-p
PUT marking
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Untitled
Abstract: No abstract text available
Text: S O NY CORP/COMPONENT PRODS MTE 0302303 D GGG31b4 1 DM-232 SONY. -r- 4,-s"-ö>s" Magnetoresistance Element Description Unit: mm Package Outline D M -232 a m agnetic sensor using magnetoresistance effect is com posed of ferrom agnetic m aterial deposited by evaporation on a silicon substrate.lt is
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GGG31b4
DM-232
DDD31b7
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C946
Abstract: DM 0565 2SC1636 2SK43 2SC1636 equivalent C1475 1S1555 DM211 magnetic resistance element lm393 rotational speed
Text: DM-211 SO N Y. Magnetoresistance Element Description The DM -211 is a highly sensitive magneto resistance element, composed of an evaporated ferromagnetic alloy on a sillicon substrate. This element can be used for the detection of rotational speed and direction of rotation,
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DM-211
75mVp-p
iPC271
1S1555
2SA844
2SC1636,
100ft
C946
DM 0565
2SC1636
2SK43
2SC1636 equivalent
C1475
1S1555
DM211
magnetic resistance element
lm393 rotational speed
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DM 321
Abstract: No abstract text available
Text: DM-231 SONY. Magnetoresistance Element Description Unit: mm Package Outline DM-231 a magnetic sensor using magneto resist ance effect is composed of ferrom agnetic material deposited by evaporation on a silicon substrate.lt is suitable fo r angle of rotation detection.
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DM-231
DM-231
150mVp-p
DM 321
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DM 0565
Abstract: sony 1S1656 MPC271 DM211 DM-211 2sa844
Text: SONY CORP/COMPONENT PRODS HTE 0302303 D 0003151 DM-211 SO N Y. Magnetoresistance Element Description 3 «S O N Y Package Outline Unit: mm The DM -211 is a highly sensitive magneto resistance element, composed of an evaporated ferromagnetic alloy on a sillicon substrate.
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DM-211
75mVp-p
40D31S3
MPC271
1S1656
2SA844
150J1
00031SM
DM 0565
sony
1S1656
DM211
DM-211
2sa844
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A844
Abstract: c1636 c945 equivalent C1475 2SC1636 2SC1636-22 2Sc945 equivalent DM211 equivalent c945 lm393 rotational speed
Text: DM-211 SO NY. Magnetoresistance Element Description The D M -2 1 1 is a highly sensitive magneto resistance element, composed of an evaporated ferrom agnetic alloy on a sillicon substrate. This element can be used for the detection of rotational speed and direction of rotation,
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DM-211
DM-211
2SC1636-22
uPC271
1S1555
C1636-22
iPC741
2SC945
A844
c1636
c945 equivalent
C1475
2SC1636
2SC1636-22
2Sc945 equivalent
DM211
equivalent c945
lm393 rotational speed
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DM 321
Abstract: magnetoresistance element
Text: SONY CORP/COMPONENT PRODS M^E D &3&R3&3 D0031b0 ^ DM-231 SO N Y . Magnetoresistance Element / *•Cq Description r DM-231 a magnetic sensor using magnétorésist ance effect is. composed of ferromagnetic material deposited by evaporation on a silicon substrate.lt is
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D0031b0
DM-231
150mVp-p
A3fl23fi3
QQQ31b3
DM-231
T-65-05
DM 321
magnetoresistance element
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Untitled
Abstract: No abstract text available
Text: SONY DM-106B Magnetoresistance Element Description T he D M -1 06 B is a h ig h ly s e n s itiv e m ag n e to resistance e le m ent com posed of an evaporated fe rro m a gn etic alloy on a silicon substrate. The element can be used for automatic shut off of tape
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DM-106B
M-110
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Untitled
Abstract: No abstract text available
Text: DM-232 Sony. Magnetoresistance Element Description Package Outline U n it : m m D M -2 32 a m a g n e tic sensor using m a gnetoresistance e ffe c t is com posed o f fe rro m a g n e tic m a terial deposited by e v a p o ra tio n on a silicon s u b s tra te .lt is
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DM-232
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Magnetoresistance and sensor speed
Abstract: No abstract text available
Text: MR Sensors TDM series Magneto-Resistance Device High Sensitivity in Weak Magnetic Fields and High-Speed Response Capability are Offered Together CONSTRUCTION OF MAGNETIC ENCORDER FEATURES Magnetic Recording Medium 1. Compact and light weight. 2. Ferromagnetic thin films made from a permalloy or a nickel-cobalt alloy as an element
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Untitled
Abstract: No abstract text available
Text: b3E D • Honeywell 4 S 5 1 Û 7 2 G Q D 1 1 G 1 151 « H O N B MAGNETIC FIELD SENSORS honeyüiell / s s e c DESCRIPTION SSEC permalloy magnetic field sensors provide an unmatched ability to trade off size, power consumption, and sensitivity. They are fabricated by depositing a thin film of nickel-iron onto a silicon substrate which can have a simple
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HBSA220)
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SLP-290B-51
Abstract: 00145B SKS100 msg06 SHS361
Text: Trigger Devices Sensors Hall sensors lc max mA Vc max tV) PD (mW) VH (mV) Rio (12) SHS1Ì0 InSb linear 12 - 200 21 to 55 (1 V/1 kG) 500 to 1500 DP4 SHS210 InSb linear 10 - 150 21 to 55 (1 V/1 kG) 500 to 1500 CP4 SHS211 InSb linear 20 - 150 50 10 85 (1 V/1
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SHS210
SHS211
SHS220
SHS230
SHS260
SHS263
SHS264
SHS311
SHS320
SHS330
SLP-290B-51
00145B
SKS100
msg06
SHS361
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