2SC1636 Search Results

2SC1636 Datasheets (12)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
2SC1636		Fuji-SVEA	Japanese 2S Transistor Cross Reference Datasheet		Scan	PDF
2SC1636		Unknown	Basic Transistor and Cross Reference Specification		Scan	PDF
2SC1636		Unknown	Transistor Shortform Datasheet & Cross References		Scan	PDF
2SC1636		Unknown	Shortform Transistor PDF Datasheet		Short Form	PDF
2SC1636		Unknown	Japanese Transistor Cross References (2S)		Scan	PDF
2SC1636		Unknown	Cross Reference Datasheet		Scan	PDF
2SC1636		Unknown	Shortform Transistor PDF Datasheet		Short Form	PDF
2SC1636		Unknown	Transistor Substitution Data Book 1993		Scan	PDF
2SC1636		Unknown	The Japanese Transistor Manual 1981		Scan	PDF
2SC1636		Unknown	Shortform Data and Cross References (Misc Datasheets)		Short Form	PDF
2SC1636		Unknown	Shortform Transistor Datasheet Guide		Short Form	PDF
2SC1636		Sony	Silicon NPN LEC Transistor		Scan	PDF

2SC1636 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
2sc1695 Abstract: 2SC1694 2SC1693 2sc1696 2sc1700 2sa835 2sc1611 2SC1699 2SC1648 2SC1616 Text: Absolutes maximum ratings Ta=25ºC Electrical characteristics (Ta=25ºC) DC Current Gain VCBO VEBO Ic Pc Tj fab/ft* Cob hFE PartNumber ºñ°í VCE Ic (V) (V) (mA) (mW) (ºC) (MHz) (pF) (V) (mA) 2SC1601 35 100 200 175 150 6 1 200* 2 2SC1602 35 100 150 125	Original	2SC1601 2SC1602 2SC1603 2SC1604 2SC1605 2SC1605A 2SC1606 2SC1607 2SC1608 2SC1609 2sc1695 2SC1694 2SC1693 2sc1696 2sc1700 2sa835 2sc1611 2SC1699 2SC1648 2SC1616	PDF
STk442-130 Abstract: M56730ASP PAC011A PAC010A UPC2581 PAL005A stk413-020a upc2581v ecg semiconductors master replacement guide STRS5717 Text: C52_pg_337~347 8/16/07 11:47 AM Page 337 Semiconductors/ Components SEMICONDUCTORS MCM has an extensive selection of SMD Surface Mount Devices which are denoted on the following page with an *(asterisk)! COUNT ON MCM TO ALWAYS PROVIDE. section 16 Semiconductors/Components	Original	100-up) STk442-130 M56730ASP PAC011A PAC010A UPC2581 PAL005A stk413-020a upc2581v ecg semiconductors master replacement guide STRS5717	PDF
2SC1636 Abstract: 2SC1981 2sc163 2SC198 Text: 2SC1636 . Silicon NPN LEC Transistor S i— r - r v ^ - f y f , hFE 5 0 0 -2 0 0 0 • VCE „ . - 7 5 m V • Industrial Use: 2SC1981 (s) (Can Type) A bsolute M axim um Ratings T a = 25°C Characteristics Sym bol 2SC1636 Collector-to-Base Voltage	OCR Scan	0015mA 005mA 2SC1636 2SC1981 10ki2 2SC1636 2sc163 2SC198	PDF
C946 Abstract: DM 0565 2SC1636 2SK43 2SC1636 equivalent C1475 1S1555 DM211 magnetic resistance element lm393 rotational speed Text: DM-211 SO N Y. Magnetoresistance Element Description The DM -211 is a highly sensitive magneto resistance element, composed of an evaporated ferromagnetic alloy on a sillicon substrate. This element can be used for the detection of rotational speed and direction of rotation,	OCR Scan	DM-211 75mVp-p iPC271 1S1555 2SA844 2SC1636, 100ft C946 DM 0565 2SC1636 2SK43 2SC1636 equivalent C1475 1S1555 DM211 magnetic resistance element lm393 rotational speed	PDF
2SC144 Abstract: 2SD466 2sc5266 Text: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l\|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *	OCR Scan	T258-OMI FAX06 2SC144 2SD466 2sc5266	PDF
aeg diode Si 61 L Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680 Text: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books	OCR Scan	11tA0A12 A025A A0290 U0U55 A0291 A0292 A0305 A0306 A0A56 A0A59 aeg diode Si 61 L aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680	PDF
2SB415 Abstract: 2SB 710 2sc1061 2sd524 2sb504 HD68P01 2sb507 2sa762 2sc827 2SC1362 Text: V W Ki * 91 ^ # b h 7 >->" X ? i, t ^ X M X V M W X M £ (E I A J i: 2 S W Z x R m z t i S , x t iz J :'), ? 4000H£< * ^ t i X t 4 ', ^ i t . : w ° n l l ±, Z iih J M I1 L -C A J t t , g 4 - ? 4 M # c o ( , c o T ' & , I W H H c o f ^ 6 i> w 1, ^ & >) b ') £ i ~	OCR Scan	4000HÂ 2SB415 2SB 710 2sc1061 2sd524 2sb504 HD68P01 2sb507 2sa762 2sc827 2SC1362	PDF
y51 h 120c Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711 Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK	OCR Scan	500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711	PDF
A844 Abstract: c1636 c945 equivalent C1475 2SC1636 2SC1636-22 2Sc945 equivalent DM211 equivalent c945 lm393 rotational speed Text: DM-211 SO NY. Magnetoresistance Element Description The D M -2 1 1 is a highly sensitive magneto resistance element, composed of an evaporated ferrom agnetic alloy on a sillicon substrate. This element can be used for the detection of rotational speed and direction of rotation,	OCR Scan	DM-211 DM-211 2SC1636-22 uPC271 1S1555 C1636-22 iPC741 2SC945 A844 c1636 c945 equivalent C1475 2SC1636 2SC1636-22 2Sc945 equivalent DM211 equivalent c945 lm393 rotational speed	PDF