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    United Chemi-Con Inc E36D350HPN393MA92U

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    United Chemi-Con Inc E32D401HPN681MA92C

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    United Chemi-Con Inc E32D500HPN223MA92M

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    United Chemi-Con Inc E36D500HPN273MA92M

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    MA92 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Type PDF
    MA-921CT Analog Systems POWER OPERATIONAL AMPLIFIER Scan PDF
    MA9264 Dynex Radiation Hard 8192x8 Bit Static RAM Original PDF

    MA92 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MA9264

    Abstract: No abstract text available
    Text: MA9264 MA9264 Radiation Hard 8192x8 Bit Static RAM Replaces January 2000 version, DS3692-7.0 DS3692-7.1 July 2002 The MA9264 64k Static RAM is configured as 8192x8 bits and manufactured using CMOS-SOS high performance, radiation hard, 1.5µm technology. The design uses a 6 transistor cell and has full static operation with


    Original     		PDF MA9264 8192x8 DS3692-7 MA9264

    MA9264

    Abstract: No abstract text available
    Text: MA9264 MA9264 Radiation Hard 8192x8 Bit Static RAM Replaces June 1999 version, DS3692-6.0 DS3692-7.0 January 2000 The MA9264 64k Static RAM is configured as 8192x8 bits and manufactured using CMOS-SOS high performance, radiation hard, 1.5µm technology. The design uses a 6 transistor cell and has full static operation with


    Original     		PDF MA9264 8192x8 DS3692-6 DS3692-7 MA9264

    MA9264

    Abstract: MA92 CS209
    Text: MARCH 1995 MA9264 ADVANCE DATA DS3692-5.1 MA9264 RADIATION HARD 8192 x 8 BIT STATIC RAM The MA9264 64k Static RAM is configured as 8192x8 bits and manufactured using CMOS-SOS high performance, radiation hard, 1.5µm technology. The design uses a 6 transistor cell and has full static operation with


    Original     		PDF MA9264 DS3692-5 MA9264 8192x8 MA92 CS209

    MA9264

    Abstract: MAX9264 XG404
    Text: MA9264 MA9264 Radiation Hard 8192x8 Bit Static RAM Replaces January 2000 version, DS3692-7.0 DS3692-7.1 July 2002 The MA9264 64k Static RAM is configured as 8192x8 bits and manufactured using CMOS-SOS high performance, radiation hard, 1.5µm technology. The design uses a 6 transistor cell and has full static operation with


    Original     		PDF MA9264 8192x8 DS3692-7 MA9264 MAX9264 XG404

    MRC D6 16A

    Abstract: No abstract text available
    Text: Cover Marvell PXA270 Processor Developers Manual Doc. No. MV-S301039-00 , Rev. A April 2009 Marvell. Moving Forward Faster Released PXA270 Processor Developers Manual Document Conventions Note: Provides related information or information of special importance.


    Original     		PDF PXA270 MV-S301039-00 PXA270 MV-S301039-00 MRC D6 16A

    atmel 424

    Abstract: AT65609EHW AT65609EHW-CI40SV AT65609E MA9264 ATMel 046 MIL-PRF38535 AT65609EHW-CI40MQ AT65609EHW-CI40SR
    Text: Features • Operating Voltage: 5V • Access Time: 40ns • Very Low Power Consumption • • • • • • • • • – Active: 440mW Max – Standby: 10mW (Typ) Wide Temperature Range: -55°C to +125°C 600 Mils Width Package: SB28 TTL Compatible Inputs and Outputs


    Original     		PDF 440mW MIL-PRF38535 AT65609EHW MA9264 7791C atmel 424 AT65609EHW-CI40SV AT65609E ATMel 046 MIL-PRF38535 AT65609EHW-CI40MQ AT65609EHW-CI40SR

    maruwa

    Abstract: AL2O3 AS970 submount MA92 MA92W PD submount
    Text: 㩷 MARUWA 薄膜基板 CENERAL CATALOG 薄膜基板是多种久经检验的陶瓷材料与多年开发的薄膜金属化技术相结合 的成果。可根据客户的要求，生产复杂电路基板，满足客户需求的物理 化学性质以及高度集成和优越电气性质。


    Original     		PDF MA92W MA92B AS970 HA996 5mm/4mil60mil L/S10 L/S20m/20m maruwa AL2O3 AS970 submount MA92 MA92W PD submount

    sony ps3 eye camera

    Abstract: PXA272 ED101 transistor PXA271 PXA27x ss100 transistor NPCE 795 AF117 transistor PXA210 relays STPI 310
    Text: Intel PXA27x Processor Family Developer’s Manual January 2006 Order Number: 280000-003 INFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH INTELR PRODUCTS. EXCEPT AS PROVIDED IN INTEL’S TERMS AND CONDITIONS OF SALE FOR SUCH PRODUCTS, INTEL ASSUMES NO LIABILITY WHATSOEVER, AND INTEL DISCLAIMS ANY EXPRESS


    Original     		PDF PXA27x Index-36 sony ps3 eye camera PXA272 ED101 transistor PXA271 ss100 transistor NPCE 795 AF117 transistor PXA210 relays STPI 310

    Untitled

    Abstract: No abstract text available
    Text: Features • Operating Voltage: 5V • Access Time: 40ns • Very Low Power Consumption • • • • • • • • • – Active: 440mW Max – Standby: 10mW (Typ) Wide Temperature Range: -55°C to +125°C 600 Mils Width Package: SB28 TTL Compatible Inputs and Outputs


    Original     		PDF 440mW MIL-PRF38535 AT65609EHW MA9264 7791Câ

    CX2801

    Abstract: CX1574C CX1535 CX1585A CX1140 CX1157 CX1836A cx2804 e2v spark gaps Thyratron dc to ac inverter
    Text: E2V Technologies Hydrogen Thyratrons Preamble Table of Contents 1 INTRODUCTION . . . . . . . . . . . . . 2 DESCRIPTION . . . . . . . . . . . . . . 2 2 PRINCIPLES OF OPERATION . . . . . THE SWITCHING CYCLE . . . . . . . i. Voltage Hold-off . . . . . . . . ii. Commutation . . . . . . . . .


    Original     		PDF 180A-5 CX2801 CX1574C CX1535 CX1585A CX1140 CX1157 CX1836A cx2804 e2v spark gaps Thyratron dc to ac inverter

    Untitled

    Abstract: No abstract text available
    Text: Features • Operating Voltage: 5V • Access Time: 40ns • Very Low Power Consumption – Active: 440mW Max – Standby: 10mW (Typ) • Wide Temperature Range: -55°C to +125°C • 600 Mils Width Package: SB28 • TTL Compatible Inputs and Outputs • Asynchronous


    Original     		PDF 440mW MIL-PRF38535 AT65609EHW MA9264 7791Dâ

    vhdl code for 4 bit carry look ahead adder

    Abstract: vhdl code for 8 bit carry look ahead adder DS3596-4 full adder circuit using nor gates vhdl code for carry look ahead adder DS3596 LAH3 vhdl code for 4 bit ripple COUNTER CERQUAD44 MA9600
    Text: MA9000A Sea of MA9000A Gates Radiation hard Advance Gate Array Design System ReplacesJanuary 2000 version, DS3596-4.0 DS3596-4.1 July 2002 The logic building block is a cell-unit, equivalent in size to a two input NAND gate. Back-to-back cell units form the core of


    Original     		PDF MA9000A MA9000A DS3596-4 vhdl code for 4 bit carry look ahead adder vhdl code for 8 bit carry look ahead adder full adder circuit using nor gates vhdl code for carry look ahead adder DS3596 LAH3 vhdl code for 4 bit ripple COUNTER CERQUAD44 MA9600

    AS970

    Abstract: MA92W TCR505 Al2O3 20M100 Maruwa substrate thermal conductivity maruwa
    Text: 薄膜回路基板 THIN FILM METALIZED SUBSTRATES MARUWAの薄膜回路基板は実績ある各種セラミッ ク素材と、長年培ってきた薄膜メタライズ技術の融合 の結果生まれた基板材料です。それ故、ユーザー要求


    Original     		PDF 5mm/4mil60mil AS970 MA92W TCR505 Al2O3 20M100 Maruwa substrate thermal conductivity maruwa

    CX1191

    Abstract: MA92 FX2519A MA94 CX1140 CX1835 FX-2519 5949A CX1191A FX2525
    Text: E2V Technologies Accessories for Hydrogen Thyratrons The following top cap connectors, sockets, cooling modules and resistor box are available for use with E2V Technologies hydrogen thyratrons. Type Outline Description MA91 Page 2 A five-contact B5F socket with flexible leads and terminal tags, and mounted on an


    Original     		PDF CX1140 MA153 CX1191 MA92 FX2519A MA94 CX1835 FX-2519 5949A CX1191A FX2525

    Untitled

    Abstract: No abstract text available
    Text: G E C P L E S S E Y ma9287 S L M I C O N L l i C T O R S Radiation Hard 65536x1 Bit Static RAM Preliminary Data) S 1 0 3 0 3 P D S Issu e 2.3 O c t o b e r 1990 Features • 1.5pm CMOS-SOS technology • Latch-upfree • Fast access time 45ns typical • Total dose 106 rad (Si)


    OCR Scan     		PDF ma9287 65536x1 MA9287 65536x1 MA9287_

    Untitled

    Abstract: No abstract text available
    Text: S i GEC PLESSEY S F M ADVANCE DATA ¡ C O N D U C T O R S DS3692-5.1 MA9264 RADIATION HARD 8192 X 8 BIT STATIC RAM The MA9264 64k Static RAM is configured as 8192x8 bits and manufactured using CMOS-SOS high performance, radiation hard, 1.5nm technology. The design uses a 6 transistor cell and has full static operation with


    OCR Scan     		PDF DS3692-5 MA9264 MA9264 8192x8 37bfl522 0D23flfl7

    Untitled

    Abstract: No abstract text available
    Text: Si GEC PLESSEY ADVANCE DATA S E M I C O N D U C T O R S DS3692-4.3 MA9264 RADIATION HARD 8192 X 8 BIT STATIC RAM The MA9264 64k Static RAM is configured as 8192x8 bits and manufactured using CMOS-SOS high performance, radiation hard, 1.5|±m technology. The design uses a 6 transistor cell and has full static operation with


    OCR Scan     		PDF DS3692-4 MA9264 MA9264 8192x8 110lOO 37tjflS22

    Untitled

    Abstract: No abstract text available
    Text: G E C P L E S S E Y ma9264 S I M 1 C N 1) I) ( I () K Radiation Hard 8192x8 Bit Static R A M S (Advance Data) S10301 A D S Issue 2.1 October 1990 Features Block Diagram • 1.5(im CMOS-SOS technology • Latch up free • Fast access time 45ns • Total dose 106 rad (Si)


    OCR Scan     		PDF ma9264 8192x8 S10301 MA9264 alt-60 1x10fi 1x10ls

    Untitled

    Abstract: No abstract text available
    Text: ANALOG SYSTEMS MA-921 POWER OPERATIONAL AMPLIFIER FEATURES : * * * * +/- 4.0 Amp Output 5 V/uSec Slew Rate 15 MHz Gain-Bandwidth 1 mV Offset Voltage ABSOLUTE MAXIMUM RATINGS: Supply Voltage = Diff. Input Voltage = Output Current = Opr Temp Range = 36 Volts


    OCR Scan     		PDF MA-921 MA-921 KA-921-CT Rf/10

    heaters actuators

    Abstract: MA92 ma-92
    Text: A NAL O G SYSTEMS M A - 9 21 POWER OPERATIONAL AMPLIFIER [Advanced E n g i n e e r i n g DataD FEATURES: * * * * + / — 4.0 A m p Output 5 V / u S e c S l e w Rate 15 MHz G a i n - B a n d w i d t h 1 m V Offset Vol t a g e ABSOLUTE MAXIMUM RATINGS Supply Voltage =


    OCR Scan     		PDF MA-92 T0-220 MA-921 -921-CT Rf/10 heaters actuators MA92

    Untitled

    Abstract: No abstract text available
    Text: ANALOG SYSTEMS MA-921 POWER OPERATIONAL AMPLIFIER [Advanced Engineering Data] FEATURES : * * * * + /- 4.0 Amp Output 5 V/uSec Slew Rate 15 MHz Gain-Bandwidth 1 mV Offset Voltage ABSOLUTE MAXIMUM RATINGS: Supply Voltage = Diff. Input Voltage = Output Current =


    OCR Scan     		PDF MA-921 MA-921 T0-220 -921-CT Rf/10

    half adder ttl

    Abstract: MA914 MA92 non inverting buffer 8 volts via apollo vp GEC Marconi GEC Plessey m SHR8
    Text: GEC PL ESS EY S I M I , O \ I I, I. T O MAMMA Sea of Gates Radiation Hard Advanced Gate Array Design System K -> S21600FDS Issue 1.2 Novem ber 1990 Features • Channelless array architecture • Typical gate delay 1 OnS - toggle rates of 100MHz achievable


    OCR Scan     		PDF MA9000A S21600FDS 100MHz 25uW/MHz half adder ttl MA914 MA92 non inverting buffer 8 volts via apollo vp GEC Marconi GEC Plessey m SHR8

    Untitled

    Abstract: No abstract text available
    Text: m ru n l o g SY ST E M S MA—921 POWER OPERATION AMPLIFIER ENGINEERING DATA FEATURES * * * * +/- 4.0 Amp Output 5 V/uSec Slew Rate 15 MHz Gain-Bandwidth 1 mV Offset Voltage ABSOLUTE MAXIMUM RATINGS: Supply Voltage Diff. Input Voltage Output Current O p r . T e m p . Range


    OCR Scan     		PDF MA-921 O-220 MA-921 Rf/10 MA-921-CT

    thyristor TAG 8506

    Abstract: nais inverter vf 7f operation manual 922AA1Y-A4P optek A400 817 Sprague 513D sprague 926c Sprague 195P Rapa relay 12vdc triac tag 8948 Mascot 719
    Text: TABLE OF CONTENTS Catalog Number 11Q New For 1989! • Over 7,900 New Products • 13 New M anufacturers PRODUCT INDICES tiamp*,'fminei forskSockets ' Solder Equipment endTtfob ] vriHp\< lint Equipment, Panel Meters, Aejulpmant, i A P R E M IE R C o m p an y


    OCR Scan     		PDF 11PM104 thyristor TAG 8506 nais inverter vf 7f operation manual 922AA1Y-A4P optek A400 817 Sprague 513D sprague 926c Sprague 195P Rapa relay 12vdc triac tag 8948 Mascot 719