3pin variable resistor pin connection
Abstract: MARKING MY MA3Z551
Text: PIN Diodes MA3Z551 Silicon epitaxial planar type Unit : mm For high-frequency variable resistor attenuator 2.1 ± 0.1 0.425 1.25 ± 0.1 0.425 0.3 − 0 0.65 1.3 ± 0.1 1 0.65 2.0 ± 0.2 3 2 Parameter Symbol Rating Unit Reverse voltage DC VR 40 V Peak reverse voltage
|
Original
|
PDF
|
MA3Z551
3pin variable resistor pin connection
MARKING MY
MA3Z551
|
MA3Z551
Abstract: No abstract text available
Text: PIN diodes MA3Z551 Silicon epitaxial planar type 0.425 Unit: mm For high-frequency variable resistor attenuator 0.3+0.1 –0.0 0.15+0.10 –0.05 2.1±0.1 5˚ 1.25±0.10 0.9+0.2 –0.1 • Small diode capacitance CD • Large variable range of forward dynamic resistance rf
|
Original
|
PDF
|
MA3Z551
MA3Z551
|
Untitled
Abstract: No abstract text available
Text: PIN diodes MA3Z551 Silicon epitaxial planar type 0.425 Unit: mm For high-frequency variable resistor attenuator 0.3+0.1 –0.0 0.15+0.10 –0.05 1.25±0.10 2.1±0.1 0.9+0.2 –0.1 5˚ M Di ain sc te on na tin nc ue e/ d • Small diode capacitance CD • Large variable range of forward dynamic resistance rf
|
Original
|
PDF
|
MA3Z551
|
MA3Z551
Abstract: No abstract text available
Text: PIN diodes MA3Z551 Silicon epitaxial planar type 0.425 Unit: mm For high-frequency variable resistor attenuator 0.3+0.1 –0.0 0.15+0.10 –0.05 1.25±0.10 2.1±0.1 0.9+0.2 –0.1 2 0.2±0.1 1 5˚ ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo
|
Original
|
PDF
|
MA3Z551
MA3Z551
|
MA3Z551
Abstract: No abstract text available
Text: PIN Diodes MA3Z551 Silicon epitaxial planar type Unit : mm For high-frequency variable resistor attenuator 2.1 ± 0.1 0.425 1.25 ± 0.1 0.425 0.3 − 0 0.65 1.3 ± 0.1 1 0.65 2.0 ± 0.2 3 2 Parameter Symbol Rating Unit Reverse voltage DC VR 40 V Peak reverse voltage
|
Original
|
PDF
|
MA3Z551
MA3Z551
|
MARKING MY
Abstract: 3pin variable resistor 3pin variable resistor pin connection
Text: MA111 PIN Diodes MA3Z551 Silicon epitaxial planer type Unit : mm 2.1±0.1 For attenuation of high-frequency variable resistor 0.425 1.25±0.1 0.425 Small diode capacity CD ● Large variable range of forward dynamic resistance rf ● Mini package, enabling down-sizing of the equipment and automatic
|
Original
|
PDF
|
MA111
MA3Z551
100MHz
MARKING MY
3pin variable resistor
3pin variable resistor pin connection
|
2sc5929
Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
|
Original
|
PDF
|
responsibiliXP08081
XP08546
XP0A554
XP0D873
XP0D874
XP0D875
XP0E554
2sc5929
MN1280
TRANSISTOR 2SC5929
3SK129
3SK97
2sc5928
2PG009
2SC5929 equivalent
2sk4000
2sd965 TRANSISTOR REPLACEMENT GUIDE
|
2SC5936
Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
Text: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
|
Original
|
PDF
|
XP06501T
XP06531
XP06545
XP0A554
XP0D873
XP0D874
XP0D875
2SC5936
2SC6073
PANASONIC TRANSISTOR 2SC6073
2sc5929
MN1280
transistor 2SC6073
2SC5936 equivalent
2SC6074
TRANSISTOR 2SC5929
2sc5928
|
MA661
Abstract: No abstract text available
Text: • Schottky Barrier Diodes SBD (For Power) n Type No. Main Characteristics (Ta =25 "C) Vf Vr Ir tr* max.(V) typ.(ns) (mA) (V) Package No. ■ —' < r Category A A A ■ Fast Recovery Diodes (FRD) ■ .- ■ MA749/A 40/45 5 0.55 11 1 TO-220(F) D55
|
OCR Scan
|
PDF
|
MA749/A
O-220
O-220D
AMA629
MA3U649
MA649/650
MA7D49/A
MA3U750
MA3Z551
MA558
MA661
|
3866S
Abstract: transistor a999 bs 7818 -1995 transistor tt 2206 A999 transistor TT 2206 transistor a1535A 8340UAS transistor 3866S 2SD 4515
Text: H Integrated Circuits MOS LSIs Page MOS LSI Type No. Page Type No. Page Type No. Page Type No. Page M N 171608 42 A M N 18P73210 43 M N 3210 69 M N 5179/H 91 M N 171609 42 AM N 18P73215 43 M N 3214 69 MN5181 91 M N 3102 69 M N 53 00 0 Series 55 M N 33 00 Series
|
OCR Scan
|
PDF
|
1020G
N12861
N12B62
MN1381
MN13811
MN13821
15P0802
15P5402
58851A
70803A
3866S
transistor a999
bs 7818 -1995
transistor tt 2206
A999 transistor
TT 2206 transistor
a1535A
8340UAS
transistor 3866S
2SD 4515
|
MA629
Abstract: MA7U49 220d MA750A MA689
Text: Diode • Schottky Barrier Diodes SBD (For Power) ■ Fast Recovery Diodes (FRD) Main Characteristics (Ta = 2 5 "C) Category Type No. trr* (A) max (V) typ (ns) (mA) 5 0.55 11 1 I f (AV| (V) Category Package VF Vr MA749/A 40/45 Main Characteristics (Ta = 2 5 °C)
|
OCR Scan
|
PDF
|
MA629
MA3U649
MA3U650
MA649
MA749/A
MA7D49/A
A3U750
T0-220
O-220D
MA551
MA7U49
220d
MA750A
MA689
|
AN3962FB
Abstract: MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202
Text: umb Type No. Page MOS L Type No. Page Type No. Page Type No. MN151614 43 MN1882417 45 ▲ MN151630 43 MN1882421 46 MN3204 • MN3200 Series Page Type No. Page MN56000 Series 58 63 MN56020 58 68 • O M N 101C 01A 46 MN152810 43 MN188321 45 MN3205 68 MN56030
|
OCR Scan
|
PDF
|
MN101C01C
MN101C01D
MN101C025
MN1020003
MN1020004A
MN1020004AFB
MN1020012A
MN1020
12AFA
MN1020015
AN3962FB
MN1880023
mn19412
MN1874033
IC AN7135
an3814k
MN1883214
an8294nsb
mn4117405
mn171202
|
