Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Fast Recovery Diodes (FRD) MA3U649 Silicon planar type (cathode common) For high-frequency rectification • Features ■ Package • Small U-type package for surface mounting • Low-loss type with fast reverse recovery time trr
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2002/95/EC)
MA3U649
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MA3U649
Abstract: IR 647
Text: Fast Recovery Diodes FRD MA3U649 Silicon planar type (cathode common) Unit : mm 6.5±0.1 5.3±0.1 4.35±0.1 1.0±0.2 2.5±0.1 • Small U-type package for surface mounting • Low-loss type with fast reverse recovery time trr • Cathode common dual type
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MA3U649
MA3U649
IR 647
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MA3U649
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Fast Recovery Diodes (FRD) MA3U649 Silicon planar type (cathode common) For high-frequency rectification • Package • Small U-type package for surface mounting • Low-loss type with fast reverse recovery time trr
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2002/95/EC)
MA3U649
MA3U649
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Fast Recovery Diodes (FRD) MA3U649 Silicon planar type (cathode common) Unit: mm 0.8 max. 2.5±0.1 • Small U-type package for surface mounting • Low-loss type with fast reverse recovery time trr
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2002/95/EC)
MA3U649
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PDF
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Untitled
Abstract: No abstract text available
Text: Fast Recovery Diodes FRD MA3U649 Silicon planar type (cathode common) Unit: mm 0.8 max. 2.5±0.1 • Small U-type package for surface mounting • Low-loss type with fast reverse recovery time trr • Cathode common dual type 0.5±0.1 1.8±0.1 7.3±0.1 • Features
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MA3U649
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MA3U649
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Fast Recovery Diodes (FRD) MA3U649 Silicon planar type (cathode common) M Di ain sc te on na tin nc ue e/ d For high-frequency rectification • Package • Small U-type package for surface mounting
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2002/95/EC)
MA3U649
MA3U649
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Untitled
Abstract: No abstract text available
Text: MA111 Fast Recovery Diodes FRD MA3U649 Silicon planer type (cathode common) Unit : mm For high-frequency rectification 6.5±0.1 5.3±0.1 4.35±0.1 • Features 2.3±0.1 ● Cathode common dual type 1.0±0.1 0.1±0.05 0.93±0.1 1.0±0.2 Low-loss type with fast reverse recovery time trr
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MA111
MA3U649
10ms/cycle
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MA3U649
Abstract: No abstract text available
Text: Fast Recovery Diodes FRD MA3U649 Silicon planar type (cathode common) Unit : mm For high-frequency rectification 6.5 ± 0.1 5.3 ± 0.1 4.35 ± 0.1 1.0 ± 0.2 1.0 ± 0.1 0.1 ± 0.05 0.93 ± 0.1 0.8 max. 2.5 ± 0.1 • Small U-type package for surface mounting
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MA3U649
MA3U649
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MA3U649
Abstract: No abstract text available
Text: Fast Recovery Diodes FRD MA3U649 Silicon planar type (cathode common) Unit : mm For high-frequency rectification 6.5 ± 0.1 5.3 ± 0.1 4.35 ± 0.1 1.0 ± 0.2 1.0 ± 0.1 0.1 ± 0.05 0.93 ± 0.1 0.8 max. 2.5 ± 0.1 • Small U-type package for surface mounting
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MA3U649
MA3U649
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MIP2F3
Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
Text: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the
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PAMP13-N1
MIP2F3
MIP2F4
MIP382
MIP2E7DMY
mip2f2
mip291
MIP414S
MIP2E5DMY
mip411
MIP3E3SMY equivalent
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PDF
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ma3df25
Abstract: 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01
Text: 2009 Discrete Semiconductors New Products Line-up Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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respons39
O-220D-A1
MA26P02
MAZ3082J
2SC5779
MA26P07
MAZ3091
2SC5829
MA27E020G
ma3df25
2PG011
DD5X062J
dg3d501
DSKTJ04
DA3DF50
DB2U308
SSMini2-F5-B
DSK3J02
DSC3F01
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PDF
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2sc5929
Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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responsibiliXP08081
XP08546
XP0A554
XP0D873
XP0D874
XP0D875
XP0E554
2sc5929
MN1280
TRANSISTOR 2SC5929
3SK129
3SK97
2sc5928
2PG009
2SC5929 equivalent
2sk4000
2sd965 TRANSISTOR REPLACEMENT GUIDE
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k11 zener diode
Abstract: zener diode k11 diode k6 MA3DD82 MA2B150 MA3DF40 MA3DF30 MA2B171 MA21D350 MA3df3
Text: Diodes Switching Diodes. K2 Switching Diodes . K2
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MA24D56
MA24D58
MA24D70
MA24D74
MA3D749
MA3D749A
MA3D750
MA3D750A
MA3D752
MA3D752A
k11 zener diode
zener diode k11
diode k6
MA3DD82
MA2B150
MA3DF40
MA3DF30
MA2B171
MA21D350
MA3df3
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2SC5936
Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
Text: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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XP06501T
XP06531
XP06545
XP0A554
XP0D873
XP0D874
XP0D875
2SC5936
2SC6073
PANASONIC TRANSISTOR 2SC6073
2sc5929
MN1280
transistor 2SC6073
2SC5936 equivalent
2SC6074
TRANSISTOR 2SC5929
2sc5928
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mip411
Abstract: MIP2F4 MIP2F3 AN12947a mip2f2 MIP2F20MS MIP2F40MS mip2e7dmy panasonic inverter dv 700 manual mip291
Text: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the
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PAMP13-N1
mip411
MIP2F4
MIP2F3
AN12947a
mip2f2
MIP2F20MS
MIP2F40MS
mip2e7dmy
panasonic inverter dv 700 manual
mip291
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MA3DF30
Abstract: MIP2F mip2fx MIP2KX PANASONIC SC107A IC 4026 internal structure MIP2K MA3DF46 ma3df46* ma3df30 MA2YD260G
Text: 2009 ver. 2 Diode Series %JPEF4FSJFT Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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MA661
Abstract: No abstract text available
Text: • Schottky Barrier Diodes SBD (For Power) n Type No. Main Characteristics (Ta =25 "C) Vf Vr Ir tr* max.(V) typ.(ns) (mA) (V) Package No. ■ —' < r Category A A A ■ Fast Recovery Diodes (FRD) ■ .- ■ MA749/A 40/45 5 0.55 11 1 TO-220(F) D55
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OCR Scan
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MA749/A
O-220
O-220D
AMA629
MA3U649
MA649/650
MA7D49/A
MA3U750
MA3Z551
MA558
MA661
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MA629
Abstract: MA7U49 220d MA750A MA689
Text: Diode • Schottky Barrier Diodes SBD (For Power) ■ Fast Recovery Diodes (FRD) Main Characteristics (Ta = 2 5 "C) Category Type No. trr* (A) max (V) typ (ns) (mA) 5 0.55 11 1 I f (AV| (V) Category Package VF Vr MA749/A 40/45 Main Characteristics (Ta = 2 5 °C)
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OCR Scan
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MA629
MA3U649
MA3U650
MA649
MA749/A
MA7D49/A
A3U750
T0-220
O-220D
MA551
MA7U49
220d
MA750A
MA689
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AN3962FB
Abstract: MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202
Text: umb Type No. Page MOS L Type No. Page Type No. Page Type No. MN151614 43 MN1882417 45 ▲ MN151630 43 MN1882421 46 MN3204 • MN3200 Series Page Type No. Page MN56000 Series 58 63 MN56020 58 68 • O M N 101C 01A 46 MN152810 43 MN188321 45 MN3205 68 MN56030
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OCR Scan
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MN101C01C
MN101C01D
MN101C025
MN1020003
MN1020004A
MN1020004AFB
MN1020012A
MN1020
12AFA
MN1020015
AN3962FB
MN1880023
mn19412
MN1874033
IC AN7135
an3814k
MN1883214
an8294nsb
mn4117405
mn171202
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