Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA2Q736 (MA736) Silicon epitaxial planar type 2.5±0.3 2.15±0.3 2 1.2±0.4 Unit: mm For high frequency rectification 8˚ 4.4±0.3 M Di ain sc te on na tin nc ue e/
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MA2Q736
MA736)
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Untitled
Abstract: No abstract text available
Text: Schottky Barrier Diodes SBD MA2Q736 (MA736) Silicon epitaxial planar type 2.5±0.3 2.15±0.3 2 1.2±0.4 Unit: mm For high frequency rectification 8° 4.4±0.3 • IF(AV) = 1 A rectification is possible • VR = 40 V is guaranteed • Automatic insertion with the emboss taping is possible
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MA2Q736
MA736)
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diode 104
Abstract: MA2Q736 MA736
Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA2Q736 (MA736) Silicon epitaxial planar type 2.5±0.3 2.15±0.3 2 1.2±0.4 Unit: mm For high frequency rectification 8˚ M Di ain sc te on na tin nc ue e/ d 4.4±0.3
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MA2Q736
MA736)
diode 104
MA2Q736
MA736
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MA2Q736
Abstract: MA736
Text: Schottky Barrier Diodes SBD MA2Q736 (MA736) Silicon epitaxial planar type Unit : mm For switching circuits 4.4 ± 0.3 • Forward current (average) IF(AV): 1 A type • Reverse voltage (DC value) VR: 40 V • Allowing automatic insertion with the emboss taping
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MA2Q736
MA736)
MA2Q736
MA736
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MA2Q736
Abstract: MA736
Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA2Q736 (MA736) Silicon epitaxial planar type 2.5±0.3 2.15±0.3 2 1.2±0.4 Unit: mm For high frequency rectification 8˚ M Di ain sc te on na tin nc ue e/ d 4.4±0.3
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2002/95/EC)
MA2Q736
MA736)
MA2Q736
MA736
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA2Q736 (MA736) Silicon epitaxial planar type 2.5±0.3 2.15±0.3 2 1.2±0.4 Unit: mm For high frequency rectification 8˚ 4.4±0.3 • Forward current (Average) IF(AV) = 1 A rectification is possible
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2002/95/EC)
MA2Q736
MA736)
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MA2Q736
Abstract: MA736
Text: Schottky Barrier Diodes SBD MA2Q736 (MA736) Silicon epitaxial planar type 2.5±0.3 2.15±0.3 2 1.2±0.4 Unit: mm For high frequency rectification 8° 4.4±0.3 • IF(AV) = 1 A rectification is possible • VR = 40 V is guaranteed • Automatic insertion with the emboss taping is possible
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MA2Q736
MA736)
MA2Q736
MA736
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Untitled
Abstract: No abstract text available
Text: Schottky Barrier Diodes SBD MA2Q736 (MA736) Silicon epitaxial planar type 2.5±0.3 2.15±0.3 2 1.2±0.4 Unit: mm For high frequency rectification 8˚ 4.4±0.3 • Forward current (Average) IF(AV) = 1 A rectification is possible • Reverse voltage VR = 40 V is guaranteed
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MA2Q736
MA736)
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MA2Q736
Abstract: No abstract text available
Text: Schottky Barrier Diodes SBD MA2Q736 Silicon epitaxial planar type Unit : mm For switching circuits 4.4 ± 0.3 • Forward current (average) IF(AV): 1 A type • Reverse voltage (DC value) VR: 40 V • Allowing automatic insertion with the emboss taping Symbol
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MA2Q736
MA2Q736
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MA2Q736
Abstract: MA736
Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA2Q736 (MA736) Silicon epitaxial planar type 2.5±0.3 2.15±0.3 M Di ain sc te on na tin nc ue e/ d 2 1.2±0.4 Unit: mm For high frequency rectification 8˚ ue pl d in
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MA2Q736
MA736)
MA2Q736
MA736
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ma3df25
Abstract: 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01
Text: 2009 Discrete Semiconductors New Products Line-up Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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respons39
O-220D-A1
MA26P02
MAZ3082J
2SC5779
MA26P07
MAZ3091
2SC5829
MA27E020G
ma3df25
2PG011
DD5X062J
dg3d501
DSKTJ04
DA3DF50
DB2U308
SSMini2-F5-B
DSK3J02
DSC3F01
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2sc5929
Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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responsibiliXP08081
XP08546
XP0A554
XP0D873
XP0D874
XP0D875
XP0E554
2sc5929
MN1280
TRANSISTOR 2SC5929
3SK129
3SK97
2sc5928
2PG009
2SC5929 equivalent
2sk4000
2sd965 TRANSISTOR REPLACEMENT GUIDE
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MA7D52
Abstract: No abstract text available
Text: Part Number List • Part Number List M Part No. C Part No. Page M Part No. MA2C700 MA2C700A (MA700) 11 MA3D749A (MA700A) 11 MA3D750 MA2C719 (MA719) 13 MA3D750A MA2C723 (MA723) 15 MA3D752 (C Part No.) Page M Part No. (C Part No.) (MA7D49A) 93 MA3X717 (MA717)
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MA2C700
MA2C700A
MA2C719
MA2C723
MA2D749
MA2D749A
MA2D750
MA2D755
MA2D760
MA2H735
MA7D52
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Abstract: No abstract text available
Text: New Mid-Power Low VF Schottky Barrier Diode Overview Panasonic Schottky Barrier Diode series are ideal for use in the power sopplies of computers and portable equipment. With package configurations that range from Mini Type:2-pin to New Mini Power Type:2-pin packages, these diodes
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OD-123)
OD-106)
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CAT7105CA
Abstract: mp1410es G547E2 G547H2 G547F2 P5504EDG equivalent G547I1 SP8K10 SP8K10SFD5TB LD1117Al
Text: Diodes, Inc. - Cross Reference Industry Part Diodes, Inc. Equivalent Diodes, Inc. Nearest 1.5CE120C 1.5KE120CA N/A 1.5CE120CA 1.5KE120CA N/A 1.5CE12A 1.5KE12A N/A 1.5CE12C 1.5KE12CA N/A 1.5CE12CA 1.5KE12CA N/A 1.5CE13 1.5KE13A N/A 1.5CE130 1.5KE130A N/A 1.5CE130A
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5CE120C
5KE120CA
5CE120CA
5CE12A
5KE12A
5CE12C
5KE12CA
5CE12CA
CAT7105CA
mp1410es
G547E2
G547H2
G547F2
P5504EDG equivalent
G547I1
SP8K10
SP8K10SFD5TB
LD1117Al
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Abstract: No abstract text available
Text: New Mid-Power Low VF Schottky Barrier Diode Overview Panasonic Schottky Barrier Diodes series are ideal for power source of computers and portable equipments. Low VF design 15 to 35% lower than our conventional products reduces power consumption and enhances equipment efficiency.
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2SC5936
Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
Text: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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XP06501T
XP06531
XP06545
XP0A554
XP0D873
XP0D874
XP0D875
2SC5936
2SC6073
PANASONIC TRANSISTOR 2SC6073
2sc5929
MN1280
transistor 2SC6073
2SC5936 equivalent
2SC6074
TRANSISTOR 2SC5929
2sc5928
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MA716
Abstract: MA7D50 ma741 MA10799
Text: Reference • Part Number List The order of Conventional Part Number (C Part No.) M Part No. Page (C Part No.) M Part No. Page (C Part No.) M Part No. Page (MA10700) MA3J700 113 (MA741WK) MA3J741E 119 MA2D760 23 (MA10701) MA3X701 151 (MA742) MA3J742
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MA10700)
MA10701)
MA10702)
MA10703)
MA10704)
MA10705)
MA10798)
MA10799)
MA4S713)
MA6S718)
MA716
MA7D50
ma741
MA10799
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Untitled
Abstract: No abstract text available
Text: Characteristics Quick Reference Guide • SBD for Power Electrical characteristics Ta = 25°C VRRM IF(AV) (V) (A) 30 30 Package Single-chip type VF max. (V) 20 5 0.47 MA3D798 10 3 0.47 MA3D799 TO-220D-B1 (2-pin) 1 40 45 5 50 3 1 TO-220D-A1 (3-pin) 0.55 3
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MA2D760
MA3D761
MA2D755
MA3D756
MA3D760
MA3U760
MA3D752
MA3D752A
MA3D755
MA3U755
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220v AC voltage stabilizer schematic diagram
Abstract: LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx
Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 AD9272 Analog Front End, iMEMS Accelerometers & Gyroscopes . . . . . . 782, 2583 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-528 Acceleration and Pressure Sensors . . . . . . . . . . . . . . . . . . . . . . . . . . Page 2585
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AD9272
P462-ND
LNG295LFCP2U
P463-ND
LNG395MFTP5U
220v AC voltage stabilizer schematic diagram
LG color tv Circuit Diagram tda 9370
1000w inverter PURE SINE WAVE schematic diagram
schematic diagram atx Power supply 500w
TV SHARP IC TDA 9381 PS
circuit diagram wireless spy camera
9744 mini mainboard v1.2
sony 279-87
transistor E 13005-2
superpro lx
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2sc3052ef
Abstract: 2n2222a SOT23 TRANSISTOR SMD MARKING CODE s2a 1N4148 SMD LL-34 TRANSISTOR SMD CODE PACKAGE SOT23 2n2222 sot23 TRANSISTOR S1A 64 smd 1N4148 SOD323 semiconductor cross reference toshiba smd marking code transistor
Text: Small Signal Discretes Selection Guide [ www.infineon.com/smallsignaldiscretes ] 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 8 RF MOSFET 16 Schottky Diodes 18 ESD and EMI Protection Devices and Filters
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24GHz
BF517
B132-H8248-G5-X-7600
2sc3052ef
2n2222a SOT23
TRANSISTOR SMD MARKING CODE s2a
1N4148 SMD LL-34
TRANSISTOR SMD CODE PACKAGE SOT23
2n2222 sot23
TRANSISTOR S1A 64 smd
1N4148 SOD323
semiconductor cross reference
toshiba smd marking code transistor
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IFSM
Abstract: MA22D26
Text: New Mid-Power Low VF Schottky Barrier Diode Overview Panasonic Schottky Barrier Diodes series are ideal for power source of computers and portable equipments. Low VF design 15 to 35% below conventional our products reduces power consumption and enhances
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MA22D15(
MA22D21(
MA22D23
MA22D26(
MA22D28
MA2Q705
MA2Q735
MA2Q736
MA2Q737
MA2Q738
IFSM
MA22D26
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