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    M5M5W816 Price and Stock

    Rochester Electronics LLC M5M5W816WG-55HI-BT

    STANDARD SRAM, 512KX16, 55NS
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    DigiKey M5M5W816WG-55HI-BT Bulk 20
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    Rochester Electronics LLC M5M5W816WG-70HI-BT

    STANDARD SRAM, 512KX16, 70NS
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    DigiKey M5M5W816WG-70HI-BT Bulk 20
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    Rochester Electronics LLC M5M5W816WG-70HI-ST

    STANDARD SRAM, 512KX16, 55NS
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    DigiKey M5M5W816WG-70HI-ST Bulk 20
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    Rochester Electronics LLC M5M5W816TP-55HI-ST

    STANDARD SRAM, 512KX16, 55NS
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    DigiKey M5M5W816TP-55HI-ST Bulk 20
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    MIT M5M5W816TP-70HI

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    Bristol Electronics M5M5W816TP-70HI 377
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    M5M5W816 Datasheets (30)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    M5M5W816TP-55HI Mitsubishi 8388608-BIT (524288-Word BY 16-BIT) CMOS STATIC RAM Original PDF
    M5M5W816TP-55HI Renesas Technology 8388608-BIT (524288-Word BY 16-BIT) CMOS STATIC RAM Original PDF
    M5M5W816TP-70HI Mitsubishi 8388608-BIT (524288-Word BY 16-BIT) CMOS STATIC RAM Original PDF
    M5M5W816TP-70HI Mitsubishi 8388608-BIT (524288-Word BY 16-BIT) CMOS STATIC RAM Original PDF
    M5M5W816TP-70HI Renesas Technology 8388608-BIT (524288-Word BY 16-BIT) CMOS STATIC RAM Original PDF
    M5M5W816TP-85HI Mitsubishi 8388608-BIT (524288-Word BY 16-BIT) CMOS STATIC RAM Original PDF
    M5M5W816TP-85HI Mitsubishi 8388608-BIT (524288-Word BY 16-BIT) CMOS STATIC RAM Original PDF
    M5M5W816TP-85HI Renesas Technology 8388608-BIT (524288-Word BY 16-BIT) CMOS STATIC RAM Original PDF
    M5M5W816WG Renesas Technology 8388608-BIT (524288-Word BY 16-BIT) CMOS STATIC RAM Original PDF
    M5M5W816WG10H Mitsubishi 8388608-BIT (524288-Word BY 16-BIT) CMOS STATIC RAM Original PDF
    M5M5W816WG-10H Mitsubishi 8388608-BIT (524288-Word BY 16-BIT) CMOS STATIC RAM Original PDF
    M5M5W816WG10HI Mitsubishi 8388608-BIT (524288-Word BY 16-BIT) CMOS STATIC RAM Original PDF
    M5M5W816WG-10HI Mitsubishi 8388608-BIT (524288-Word BY 16-BIT) CMOS STATIC RAM Original PDF
    M5M5W816WG10L Mitsubishi 8388608-BIT (524288-Word BY 16-BIT) CMOS STATIC RAM Original PDF
    M5M5W816WG-10L Mitsubishi 8388608-BIT (524288-Word BY 16-BIT) CMOS STATIC RAM Original PDF
    M5M5W816WG10LI Mitsubishi 8388608-BIT (524288-Word BY 16-BIT) CMOS STATIC RAM Original PDF
    M5M5W816WG-10LI Mitsubishi 8388608-BIT (524288-Word BY 16-BIT) CMOS STATIC RAM Original PDF
    M5M5W816WG-55HI Renesas Technology 8388608-BIT (524288-Word BY 16-BIT) CMOS STATIC RAM Original PDF
    M5M5W816WG-70HI Mitsubishi 8388608-BIT (524288-Word BY 16-BIT) CMOS STATIC RAM Original PDF
    M5M5W816WG-70HI Renesas Technology 8388608-BIT (524288-Word BY 16-BIT) CMOS STATIC RAM Original PDF

    M5M5W816 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    M5M5W816

    Abstract: M5M5W816WG
    Text: 2001.6.11 MITSUBISHI LSIs Ver. 3.1 M5M5W816WG - 70HI, 85HI PRELIMINARY Notice: This is not a final specification. Some parametric limits are subject to change 8388608-BIT 524288-WORD BY 16-BIT CMOS STATIC RAM FEATURES DESCRIPTION The M5M5W816 is a f amily of low v oltage 8-Mbit static RAMs


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    M5M5W816WG 8388608-BIT 524288-WORD 16-BIT) M5M5W816 524288-words 16-bit, 48ball) PDF

    Untitled

    Abstract: No abstract text available
    Text: 2002.04.18 Ver. 6.0 MITSUBISHI LSIs M5M5W816WG - 55HI, 70HI, 85HI 8388608-BIT 524288-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION FEATURES The M5M5W816 is a f amily of low v oltage 8-Mbit static RAMs organized as 524288-words by 16-bit, f abricated by Mitsubishi's


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    M5M5W816WG 8388608-BIT 524288-WORD 16-BIT) M5M5W816 524288-words 16-bit, 48ball) PDF

    Untitled

    Abstract: No abstract text available
    Text: 2001.10.15 MITSUBISHI LSIs Ver. 5.0 M5M5W816WG - 55HI, 70HI, 85HI 8388608-BIT 524288-WORD BY 16-BIT CMOS STATIC RAM FEATURES DESCRIPTION The M5M5W816 is a f amily of low v oltage 8-Mbit static RAMs organized as 524288-words by 16-bit, f abricated by Mitsubishi's


    Original
    M5M5W816WG 8388608-BIT 524288-WORD 16-BIT) M5M5W816 524288-words 16-bit, 48ball) PDF

    Untitled

    Abstract: No abstract text available
    Text: 2001.10.15 Ver. 4.0 M5M5W816TP - 55HI, 70HI, 85HI MITSUBISHI LSIs 8388608-BIT 524288-WORD BY 16-BIT CMOS STATIC RAM FEATURES DESCRIPTION - The M5M5W816TP is a f amily of low v oltage 8-Mbit static RAMs organized as 524288-words by 16-bit, f abricated by


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    M5M5W816TP 8388608-BIT 524288-WORD 16-BIT) 524288-words 16-bit, 44pin PDF

    M5M5W816

    Abstract: M5M5W816WG
    Text: 1999.1.15 MITSUBISHI LSIs Ver. 0.1 M5M5W816WG -85L, 10L, 85H, 10H -85LI, 10LI, 85HI, 10HI PRELIMINARY Notice: This is not a final specification. Some parametric limits are subject to change 8388608-BIT 524288-WORD BY 16-BIT CMOS STATIC RAM Those are summarized in the part name table below.


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    M5M5W816WG -85LI, 8388608-BIT 524288-WORD 16-BIT) M5M5W816 524288-words 16-bit, PDF

    mitsubishi date code

    Abstract: M5M5W816 M5M5W816WG
    Text: 2001.4.11 MITSUBISHI LSIs Ver. 2.0 M5M5W816WG - 85HI PRELIMINARY Notice: This is not a final specification. Some parametric limits are subject to change 8388608-BIT 524288-WORD BY 16-BIT CMOS STATIC RAM Those are summarized in the part name table below.


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    M5M5W816WG 8388608-BIT 524288-WORD 16-BIT) M5M5W816 524288-words 16-bit, 48baersea mitsubishi date code PDF

    M5M5W816TP-70HI

    Abstract: M5M5W816TP
    Text: 2001.4.11 Ver. 2.0 MITSUBISHI LSIs M5M5W816TP-70HI, 85HI PRELIMINARY Notice: This is not a final specification. Some parametric limits are subject to change 8388608-BIT 524288-WORD BY 16-BIT CMOS STATIC RAM Those are summarized in the part name table below.


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    M5M5W816TP-70HI, 8388608-BIT 524288-WORD 16-BIT) M5M5W816TP 524288-words 16-bit, 44pin M5M5W816TP-70HI PDF

    M5M5W816TP

    Abstract: No abstract text available
    Text: 2002.04.18 Ver. 6.0 M5M5W816TP - 55HI, 70HI, 85HI MITSUBISHI LSIs 8388608-BIT 524288-WORD BY 16-BIT CMOS STATIC RAM FEATURES DESCRIPTION The M5M5W816TP is a f amily of low v oltage 8-Mbit static RAMs organized as 524288-words by 16-bit, f abricated by Mitsubishi's high-perf ormance 0.18µm CMOS technology .


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    M5M5W816TP 8388608-BIT 524288-WORD 16-BIT) 524288-words 16-bit, 44pin PDF

    SOP 8 200MIL

    Abstract: serial flash 256Mb fast erase spi TM 1628 IC SOP Micron 512MB NOR FLASH HN29V1G91T-30 HN58C1001FPI-15 M5M51008DFP-70HI 256mb EEPROM Memory CSP-48 TSOP 28 SPI memory Package flash
    Text: Renesas Memory General Catalog 2003.11 Renesas Memory General Catalog Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with


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    D-85622 REJ01C0001-0100Z SOP 8 200MIL serial flash 256Mb fast erase spi TM 1628 IC SOP Micron 512MB NOR FLASH HN29V1G91T-30 HN58C1001FPI-15 M5M51008DFP-70HI 256mb EEPROM Memory CSP-48 TSOP 28 SPI memory Package flash PDF

    am29f010b-70ef

    Abstract: A29010-70F AM29F040B-55JF AM29F040B-90jf Pm25LV512A am29f800bb-70ef S29AL004D55TFI02 AM29F040B-90JI AM29F010B70JF tc55257 cross reference
    Text: Cross Reference Memory IC's and More www.amictechnology.com part number AMIC part number µPD4218165 µPD4218165 µPD424260 µPD431000A µPD43256B µPD441000L-B µPD442000L-B µPD442012L-XB µPD444012L-B A29F002 AM29F002B AM29F002BB-120JF AM29F002BB-55JD AM29F002BB-90EI


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    PD4218165 PD424260 PD431000A PD43256B PD441000L-B PD442000L-B PD442012L-XB PD444012L-B A29F002 am29f010b-70ef A29010-70F AM29F040B-55JF AM29F040B-90jf Pm25LV512A am29f800bb-70ef S29AL004D55TFI02 AM29F040B-90JI AM29F010B70JF tc55257 cross reference PDF

    TSOP44 Package

    Abstract: HY628400ALLG-70 HY62WT08081E-DG70I HY628100BLLG-70 SO28 package datasheet cy62127bvll-70bai so32 HY628400ALLT2-70 M68AF511AL55MC1 K6T1008C2E-GB70
    Text: Static Random Access Memories Asynchronous low power and synchronous fast SRAM solutions www.st.com/sram Selection Guide with Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions Static Random Access Memories STMicroelectronics has decided to target different growing market segments


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    PDF

    HM2V8100TTI5SE

    Abstract: HM216514TTI5SE M5M51008DFP-70HIST HM216514 M5M51008DFP-55HIBT hm28100tti5se R1LV1616HSA-4SI M5M51008DFP-70HI M5M5V108DVP-70HIST R1LV0408DSP-5SI
    Text: LPSRAM Part Number Guide Density Configuration 256K 32k x8 Voltage 3.0-3.6 & 4.5-5.5V Package SOP28 TSOP28 4.5-5.5V SOP28 Speed 70ns 70ns 55ns 70ns TSOP28 55ns 70ns 1M 128k x8 2.7-3.6V SOP32 TSOP32 sTSOP32 4.5-5.5V SOP32 70ns 70ns 70ns 55ns 70ns TSOP32 55ns


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    TSOP32 sTSOP32 M5M5256DVP-55LL M5M5256DVP-55XL M5M5256DVP-70LL M5M5256DVP-70XL M5M5256DVP-70LLI M5M5V108DFP-70H HM2V8100TTI5SE HM216514TTI5SE M5M51008DFP-70HIST HM216514 M5M51008DFP-55HIBT hm28100tti5se R1LV1616HSA-4SI M5M51008DFP-70HI M5M5V108DVP-70HIST R1LV0408DSP-5SI PDF

    M5M5W816TP

    Abstract: No abstract text available
    Text: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog


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    PDF

    TC554161A

    Abstract: HY62WT08081E K6X8008C2B CY62148E r1lv0416 K6F1616 k6t0808c1d BH616UV4010 BH616UV8010 BH62UV4000
    Text: BSI Ultra Low Power SRAM Cross Reference Table BH-Series Density Config. x8 Part No. BH62UV4000 Speed ns 55 Iccsb1 Typical (at 25C) 2V 3V 5V Icc 3V 1MHz fmax 5V fmax 2uA 1.5mA N.A. 2uA N.A 9mA Voltage (V) Renesas Hynix BH616UV4010 55 2uA 2uA N.A 1.5mA 9mA


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    BH62UV4000 BH616UV4010 BH62UV8000 BH616UV8010 BH62UV1600 BH616UV1610 TC55V4000 TC55VEM208ASTN T16LV8017 K6X8008T2B TC554161A HY62WT08081E K6X8008C2B CY62148E r1lv0416 K6F1616 k6t0808c1d BH616UV4010 BH616UV8010 BH62UV4000 PDF

    M5M418165

    Abstract: NEC 2581 CSP-48 AS7C33256PFS18A tc5588 KM6865 FLASH CROSS 256K16 TR-81090 la 4620
    Text: Product Guide SRAM 64K 256K 512K All densities in bits 1M 2M 1.65V-3.6V Low-power Asynchronous IntelliwattT M 32Kx8 5V Fast Asynchronous 4M 8M 16M 512K×8 1M×8 2M×8 256K×16 3.3V Fast Asynchronous 8K×8 32K×8 32K×16 32K×16 128K×8 512K×8 64K×16


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    Q4--2000 1Mx18 512Kx36 SE-597 x2255 M5M418165 NEC 2581 CSP-48 AS7C33256PFS18A tc5588 KM6865 FLASH CROSS 256K16 TR-81090 la 4620 PDF

    K6X8016T3B-UF55

    Abstract: K6X4008C1F-UF55 HM216514TTI5SE k6x4008c1f uf55 K6X4016T3F-UF70 K6X4008T1F-UF70 HM28100TTI5SE K6X8008T2B-UF55 M5M51008DFP-70HI K6X4008T1F-BF70
    Text: SRA SRAM mories RENESAS Low Power SRAM Roadmap Density LOW 2005 2006 256 KB x8 0.6 µm 1MB x8 0.25 µm 2 MB x8 / x16 0.25 µm 4 MB Middle 8 MB Large 2007 0.18 µm 2008 Status • Stable support x8 / x16 0.15 µm Advanced LPSRAM Vcc = 3.3V ver. x8 / x16 0.18 µm


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    AUS-2154 D-65510 K6X8016T3B-UF55 K6X4008C1F-UF55 HM216514TTI5SE k6x4008c1f uf55 K6X4016T3F-UF70 K6X4008T1F-UF70 HM28100TTI5SE K6X8008T2B-UF55 M5M51008DFP-70HI K6X4008T1F-BF70 PDF

    TC55VEM416AXBN

    Abstract: K6F8016U6B HY62WT08081E K6X4008C1F BH-Series CY62147CV30 Hynix Cross Reference samsung k6x1008c2d CY62148E TC55VEM216ABXN
    Text: BSI Ultra Low Power SRAM Cross Reference Table BH-Series Density Config. x8 Part No. BH62UV4000 Speed ns 55 Iccsb1 Typical (at 25C) 2V 3V 5V Icc 3V 1MHz fmax 5V fmax 2uA 1.5mA N.A. 2uA N.A 9mA Voltage (V) Renesas Hynix BH616UV4010 55 2uA 2uA N.A 1.5mA 9mA


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    BH62UV4000 BH616UV4010 BH62UV8000 BH616UV8010 BH62UV1600 BH616UV1610 TC55V4000 TC55VEM208ASTN T16LV8017 K6X8008T2B TC55VEM416AXBN K6F8016U6B HY62WT08081E K6X4008C1F BH-Series CY62147CV30 Hynix Cross Reference samsung k6x1008c2d CY62148E TC55VEM216ABXN PDF

    RILP0108ESP-xSR

    Abstract: RILP0108ESA-xSR R1LV0816A r1lv0808 RILP0108ESA-xSI RILP0108ESF-xSR RILP0108E M5M5256DFP-70LLI M5M5256D M5M5V108D
    Text: Renesas Memories General Presentation October 2010 Renesas Low Power SRAM Renesas Electronics Corporation Mixed Signal IC Business Div. Analog & Power Devices Business Unit 10/01/2010 1-1 Rev.2.00 2010. Renesas Electronics Corporation. All rights reserved.


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    R1WV6416R RILP0108ESP-xSR RILP0108ESA-xSR R1LV0816A r1lv0808 RILP0108ESA-xSI RILP0108ESF-xSR RILP0108E M5M5256DFP-70LLI M5M5256D M5M5V108D PDF

    M5M5W816

    Abstract: M5M5W816WG
    Text: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog


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    PDF

    HN58V1001TI-25E

    Abstract: R1EX25256ATA00I renesas tcam tcam renesas cypress tcam idt tcam r1qaa7218rbg R1LV0816A M5M51008DFP-55H R1LV1616RBG-7SI
    Text: 2009.04 Renesas General-Purpose Memory General Catalog www.renesas.com Highly Reliable Technological Innovation Ever faster, ever more power efficient…. Our advanced technology delivers To give your products the edge in today’s tough competitive higher quality and reliability,


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    REJ01C0001-1000 HN58V1001TI-25E R1EX25256ATA00I renesas tcam tcam renesas cypress tcam idt tcam r1qaa7218rbg R1LV0816A M5M51008DFP-55H R1LV1616RBG-7SI PDF

    um61256

    Abstract: um611024 SRAM 64KX8 5V A29F002 TC51V4265 rom at29c010 WINBOND cross reference MT48LC8M16A2 ks0723 k4s561632 IDT72V245
    Text: Cross Reference Your Memory Provider part number brand AMIC part number Description µPD4218165 µPD4218165 µPD424260 µPD431000A µPD43256B µPD441000L-B µPD442000L-B µPD442012L-XB µPD444012L-B µPD4504161 28F160S3/B3/C3 A29F002 AM29DL162C/D AM29DL163C/D


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    PD4218165 PD424260 PD431000A PD43256B PD441000L-B PD442000L-B PD442012L-XB PD444012L-B PD4504161 um61256 um611024 SRAM 64KX8 5V A29F002 TC51V4265 rom at29c010 WINBOND cross reference MT48LC8M16A2 ks0723 k4s561632 IDT72V245 PDF

    M5M5256DFP-70LL*bm

    Abstract: HM2V8100TTI5SE R1LV1616HSA-4SI HM216514TTI5SE M5M5V108DVP-70HIBT M5M5V108DVP M5M5256DFP-70LLISM M5M5W816TP-55HI R1LP0408CSP-7LC M5M51008DFP-70HI
    Text: LPSRAM Part Number Guide Density 256K Configuration 32k x8 Voltage Package 3.0-3.6 & 4.5-5.5V SOP28 Speed 70ns Temp Range Catalog / Data Sheet Part Number 0 ~ 70'C. M5M5256DFP-70G 0 ~ 70'C. M5M5256DFP-70XG -40 ~ 85'C M5M5256DFP-70GI TSOP28 4.5-5.5V SOP28 70ns


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    M5M5256DFP-70G M5M5256DVP-70G M5M5256DVP-70XG M5M5256DVP-70GI M5M5256DFP-55LL M5M5256DFP-55XL M5M5256DFP-70LL M5M5256DFP-70XL M5M5256DFP-70LLI M5M5256DVP-55LL M5M5256DFP-70LL*bm HM2V8100TTI5SE R1LV1616HSA-4SI HM216514TTI5SE M5M5V108DVP-70HIBT M5M5V108DVP M5M5256DFP-70LLISM M5M5W816TP-55HI R1LP0408CSP-7LC M5M51008DFP-70HI PDF

    um61256

    Abstract: hynix hy57v281620 hy57v641620 cross reference WINBOND Serial flash cross reference UM611024 256k x8 SRAM 28F160S3 Samsung EOL "DDR1 SDRAM" 1MX8/512KX16
    Text: Cross Reference Your Memory Provider Part number µPD4218165 µPD4218165 µPD424260 µPD431000A µPD43256B µPD441000L-B µPD442000L-B µPD442012L-XB µPD444012L-B µPD4504161 28F160S3/B3/C3 A29F002 AM29DL162C/D AM29DL163C/D AM29DL164C/D AM29F002B AM29F010


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    PD4218165 PD424260 PD431000A PD43256B PD441000L-B PD442000L-B PD442012L-XB PD444012L-B PD4504161 um61256 hynix hy57v281620 hy57v641620 cross reference WINBOND Serial flash cross reference UM611024 256k x8 SRAM 28F160S3 Samsung EOL "DDR1 SDRAM" 1MX8/512KX16 PDF

    Untitled

    Abstract: No abstract text available
    Text: 1999.1.15 Ver. 0.1 M5M5W816WG -85L, 10L, 85H, 10H -85LI, 10LI, 85HI, 10HI MITSUBISHI LSIs Q L Notice: This is not a final specification. Some parametric limits are subject to change 8388608-BIT 524288-WORD BY 16-BIT) CMOS STATIC RAM Those are summarized in the part name table below.


    OCR Scan
    M5M5W816WG -85LI, 8388608-BIT 524288-WORD 16-BIT) 524288-w 16-bit, 48FHA 48pin 06MAX PDF