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    Text: M58PR512LE M58PR001LE 512-Mbit or 1-Gbit x16, Multiple Bank, Multilevel, Burst 1.8 V supply Flash memories Data Brief Features • Supply voltage – VDD = 1.7 V to 2.0 V for program, erase and read – VDDQ = 1.7 V to 2.0 V for I/O Buffers – VPP = 9 V for fast program


    Original     		M58PR512LE M58PR001LE 512-Mbit M58PR512LE96ZB5 PDF