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    M52D16161A Search Results

    M52D16161A Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    M52D16161A Elite Semiconductor Memory Technology 512K x 16-Bit x 2Banks Synchronous DRAM Original PDF
    M52D16161A-10BG Elite Semiconductor Memory Technology 512K x 16-Bit x 2Banks Synchronous DRAM Original PDF
    M52D16161A-10TG Elite Semiconductor Memory Technology 512K x 16-Bit x 2Banks Synchronous DRAM Original PDF

    M52D16161A Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: ESMT M52D16161A SDRAM 512K x 16Bit x 2Banks Synchronous DRAM FEATURES GENERAL DESCRIPTION 1.8V power supply LVCMOS compatible with multiplexed address Dual banks operation MRS cycle with address key programs CAS Latency 1, 2 & 3 Burst Length (1, 2, 4, 8 & full page)


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    M52D16161A 16Bit PDF

    M52D16161A-10BG

    Abstract: M52D16161A M52D16161A-10TG
    Text: ESMT M52D16161A SDRAM 512K x 16Bit x 2Banks Synchronous DRAM FEATURES z z z z z z z z z z z GENERAL DESCRIPTION 1.8V power supply LVCMOS compatible with multiplexed address Dual banks operation MRS cycle with address key programs CAS Latency 1, 2 & 3 Burst Length (1, 2, 4, 8 & full page)


    Original
    M52D16161A 16Bit M52D16161A M52D16161A-10BG M52D16161A-10TG PDF

    M52D16161A

    Abstract: M52D16161A-10BG M52D16161A-10TG cke 2009 amp
    Text: ESMT M52D16161A Mobile SDRAM 512K x 16Bit x 2Banks Mobile Synchronous DRAM FEATURES z z z z z z z z z z z GENERAL DESCRIPTION The M52D16161A is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 16 bits, fabricated with high performance CMOS technology.


    Original
    M52D16161A 16Bit M52D16161A M52D16161A-10BG M52D16161A-10TG cke 2009 amp PDF

    M52D16161A

    Abstract: No abstract text available
    Text: ESMT M52D16161A Operation Temperature Condition -40°C~85°C Mobile SDRAM 512K x 16Bit x 2Banks Mobile Synchronous DRAM FEATURES z z z z z z z z z z z GENERAL DESCRIPTION 1.8V power supply LVCMOS compatible with multiplexed address Dual banks operation MRS cycle with address key programs


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    M52D16161A 16Bit M52rate M52D16161A PDF

    Mobile SDRAM

    Abstract: BGA-60 M52D16161A-10TG2J
    Text: ESMT M52D16161A 2J Mobile SDRAM 512K x 16Bit x 2Banks Mobile Synchronous DRAM FEATURES z z z z z z z z z z z GENERAL DESCRIPTION 1.8V power supply LVCMOS compatible with multiplexed address Dual banks operation MRS cycle with address key programs CAS Latency (2 & 3 )


    Original
    M52D16161A 16Bit M52D16161A Mobile SDRAM BGA-60 M52D16161A-10TG2J PDF

    Untitled

    Abstract: No abstract text available
    Text: ESMT M52D16161A SDRAM 512K x 16Bit x 2Banks Synchronous DRAM FEATURES z z z z z z z z z z z GENERAL DESCRIPTION The M52D16161A is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 16 bits, fabricated with high performance CMOS technology.


    Original
    M52D16161A 16Bit PDF

    Untitled

    Abstract: No abstract text available
    Text: M52D16161A 2J Mobile SDRAM 512K x 16Bit x 2Banks Mobile Synchronous DRAM GENERAL DESCRIPTION FEATURES 1.8V power supply LVCMOS compatible with multiplexed address Dual banks operation MRS cycle with address key programs CAS Latency (2 & 3 ) Burst Length (1, 2, 4, 8 & full page)


    Original
    M52D16161A 16Bit M52D16161A PDF

    M52D16161A

    Abstract: No abstract text available
    Text: ESMT M52D16161A Operation Temperature Condition -40°C~85°C Mobile SDRAM 512K x 16Bit x 2Banks Mobile Synchronous DRAM FEATURES z z z z z z z z z z z GENERAL DESCRIPTION 1.8V power supply LVCMOS compatible with multiplexed address Dual banks operation MRS cycle with address key programs


    Original
    M52D16161A 16Bit M52D16rate M52D16161A PDF

    M13S2561616A-5TG

    Abstract: 90-FBGA M12L64164A-7T M13S2561616A -5T M11B416256A-25JP diode 6BG 90FBGA M12L128168A-6TG M12L16161A TSOPII
    Text: Product Selection Guide of ESMT DRAM Density 4Mb Updated Date : 11/06/2006 Organization Description 256Kb*16 EDO DRAM 5V EDO DRAM 5V EDO DRAM 3.3V EDO DRAM 3.3V Refresh 512 512 512 512 Speed 25ns 35ns 35ns 35ns Package Part Number Pb-free Sample MP Now Now


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    256Kb 40/44L-TSOPII M11B416256A-25JP M11B416256A-35TG M11L416256SA-35JP M11L416256SA-35TG 40L-SOJ 44-40L-TSOPII 128Mb M13S2561616A-5TG 90-FBGA M12L64164A-7T M13S2561616A -5T M11B416256A-25JP diode 6BG 90FBGA M12L128168A-6TG M12L16161A TSOPII PDF