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    M48Z129Y Search Results

    M48Z129Y Datasheets (11)

    Part ECAD Model Manufacturer Description Curated Type PDF
    M48Z129Y STMicroelectronics 3.3V-5V 1 Mbit (128Kb x8) ZEROPOWER SRAM Original PDF
    M48Z129Y STMicroelectronics 5.0V OR 3.3V, 1 Mbit (128 Kb x 8) ZEROPOWER SRAM Original PDF
    M48Z129Y STMicroelectronics 5.0V OR 3.3V, 1 Mbit (128 Kb x 8) ZEROPOWER SRAM Original PDF
    M48Z129Y STMicroelectronics 1 MBIT (128KB x 8) ZEROPOWER SRAM Original PDF
    M48Z129Y-70PM1 STMicroelectronics 1 Mbit (128Kb x 8) ZEROPOWER SRAM Original PDF
    M48Z129Y-70PM1 STMicroelectronics 3.3V/5V 1 Mbit 128Kb x8 ZEROPOWER SRAM Original PDF
    M48Z129Y-70PM1 STMicroelectronics 5.0 V, 1 MBit (128 kB x 8) ZEROPOWER SRAM Original PDF
    M48Z129Y-70PM1TR STMicroelectronics 5.0 V, 1 MBit (128 kB x 8) ZEROPOWER SRAM Original PDF
    M48Z129Y-70PMTR STMicroelectronics 5.0V OR 3.3V, 1 Mbit (128 Kb x 8) ZEROPOWER SRAM Original PDF
    M48Z129Y-85PM1 STMicroelectronics 3.3V/5V 1 Mbit 128Kb x8 ZEROPOWER SRAM Original PDF
    M48Z129YPM STMicroelectronics 3.3V/5V 1 Mbit 128Kb x8 ZEROPOWER SRAM Original PDF

    M48Z129Y Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    M48Z129V

    Abstract: M48Z129Y
    Text: M48Z129Y M48Z129V 5.0V OR 3.3V, 1 Mbit 128 Kb x 8 ZEROPOWER SRAM FEATURES SUMMARY • INTEGRATED, ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT, and BATTERY ■ CONVENTIONAL SRAM OPERATION; UNLIMITED WRITE CYCLES ■ 10 YEARS OF DATA RETENTION IN THE


    Original     		PDF M48Z129Y M48Z129V 32-pin PMDIP32 M48Z129Y: M48Z129V: M48Z129V M48Z129Y

    M48Z129V

    Abstract: M48Z129Y
    Text: M48Z129Y M48Z129V 5.0 V or 3.3 V, 1 Mbit 128 Kb x 8 ZEROPOWER SRAM Features • Integrated, ultra low power SRAM, power-fail control circuit, and battery ■ conventional SRAM operation; unlimited WRITE cycles ■ 10 years of data retention in the absence of


    Original     		PDF M48Z129Y M48Z129V M48Z129Y M48Z129V: M48Z129V

    D 4242

    Abstract: No abstract text available
    Text: M48Z129Y M48Z129V 1 Mbit 128Kb x8 ZEROPOWER SRAM PRELIMINARY DATA INTEGRATED LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT and BATTERY CONVENTIONAL SRAM OPERATION; UNLIMITED WRITE CYCLES 10 YEARS of DATA RETENTION in the ABSENCE of POWER MICROPROCESSOR POWER-ON RESET


    Original     		PDF M48Z129Y M48Z129V 128Kb M48Z129Y: M48Z129V: 128Kx8 M48Z129Y/129V D 4242

    D 4242

    Abstract: PMDIP32 M48Z129V M48Z129Y
    Text: M48Z129Y M48Z129V 1Mb 128K x 8 ZEROPOWER SRAM PRELIMINARY DATA INTEGRATED LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT and BATTERY CONVENTIONAL SRAM OPERATION; UNLIMITED WRITE CYCLES 10 YEARS of DATA RETENTION in the ABSENCE of POWER MICROPROCESSOR POWER-ON RESET


    Original     		PDF M48Z129Y M48Z129V M48Z129Y: M48Z129V: 128Kx8 M48Z129Y/129V D 4242 PMDIP32 M48Z129V M48Z129Y

    AN1012

    Abstract: M48Z129V M48Z129Y
    Text: M48Z129Y M48Z129V 3.3V/5V 1 Mbit 128Kb x8 ZEROPOWER SRAM • INTEGRATED ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT, and BATTERY ■ AUTOMATIC POWER-FAIL CHIP DESELECT AND WRITE PROTECTION ■ MICROPROCESSOR POWER-ON RESET (RESET VALID EVEN DURING BATTERY


    Original     		PDF M48Z129Y M48Z129V 128Kb M48Z129Y: M48Z129V: PMDIP32 AN1012 M48Z129V M48Z129Y

    M48Z129V

    Abstract: M48Z129Y
    Text: M48Z129Y* M48Z129V 5.0V OR 3.3V, 1 Mbit 128 Kb x 8 ZEROPOWER SRAM FEATURES SUMMARY • INTEGRATED, ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT, and BATTERY ■ CONVENTIONAL SRAM OPERATION; UNLIMITED WRITE CYCLES ■ 10 YEARS OF DATA RETENTION IN THE


    Original     		PDF M48Z129Y* M48Z129V 32-pin PMDIP32 M48Z129Y: M48Z129V: M48Z129V M48Z129Y

    M48Z129V

    Abstract: M48Z129Y
    Text: M48Z129Y* M48Z129V 5.0V OR 3.3V, 1 Mbit 128 Kb x 8 ZEROPOWER SRAM FEATURES SUMMARY • INTEGRATED, ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT, and BATTERY ■ CONVENTIONAL SRAM OPERATION; UNLIMITED WRITE CYCLES ■ 10 YEARS OF DATA RETENTION IN THE


    Original     		PDF M48Z129Y* M48Z129V 32-pin PMDIP32 M48Z129Y: M48Z129V: M48Z129V M48Z129Y

    M48Z129V

    Abstract: M48Z129Y
    Text: M48Z129Y* M48Z129V 5.0V OR 3.3V, 1 Mbit 128 Kb x 8 ZEROPOWER SRAM FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ INTEGRATED, ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT, AND BATTERY CONVENTIONAL SRAM OPERATION; UNLIMITED WRITE CYCLES 10 YEARS OF DATA RETENTION IN THE


    Original     		PDF M48Z129Y* M48Z129V M48Z129Y: M48Z129V: M48Z129V M48Z129Y

    129Y

    Abstract: m48z129v M48Z129Y
    Text: M48Z129Y M48Z129V 1Mb 128K x 8 ZEROPOWER SRAM DATA BRIEFING INTEGRATED LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT and BATTERY CONVENTIONAL SRAM OPERATION; UNLIMITED WRITE CYCLES 10 YEARS of DATA RETENTION in the ABSENCE of POWER MICROPROCESSOR POWER-ON RESET


    Original     		PDF M48Z129Y M48Z129V M48Z129Y: M48Z129V: 128Kx8 M48Z129Y/129V M48Z129Y M48Z129V AI02310 A0-A16 129Y

    AN1012

    Abstract: M48Z129V M48Z129Y
    Text: M48Z129Y M48Z129V 3.3V/5V 1 Mbit 128Kb x8 ZEROPOWER SRAM • INTEGRATED ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT, and BATTERY ■ AUTOMATIC POWER-FAIL CHIP DESELECT AND WRITE PROTECTION ■ MICROPROCESSOR POWER-ON RESET (RESET VALID EVEN DURING BATTERY


    Original     		PDF M48Z129Y M48Z129V 128Kb M48Z129Y: M48Z129V: AN1012 M48Z129V M48Z129Y

    5716

    Abstract: M48Z129V M48Z129Y
    Text: M48Z129Y M48Z129V 5.0 V or 3.3 V, 1 Mbit 128 Kb x 8 ZEROPOWER SRAM Features • Integrated, ultra low power SRAM, power-fail control circuit, and battery ■ Conventional SRAM operation; unlimited WRITE cycles ■ 10 years of data retention in the absence of


    Original     		PDF M48Z129Y M48Z129V M48Z129Y: 5716 M48Z129V M48Z129Y

    FDIP24W

    Abstract: M27128A M2716 M27256 M2732A M27512 M2764A M27C256B M27C64A M29F040
    Text: MEMORIES and SMARTCARD PRODUCTS NON VOLATILE MEMORIES UV & OTP EPROM, 5V Operation Size References Description Package 16 Kb M2716 16 Kb x8 , 350 - 450ns, NMOS FDIP24W 32 Kb M2732A 32 Kb (x8), 200 - 450ns, NMOS FDIP24W M2764A 64 Kb (x8), 180 - 450ns, NMOS


    Original     		PDF M2716 450ns, FDIP24W M2732A M2764A FDIP28W M27C64A FDIP24W M27128A M2716 M27256 M2732A M27512 M2764A M27C256B M27C64A M29F040

    TSOP32 FOOTPRINT

    Abstract: NVRAM 1KB SOH28 PCB FOOTPRINT M41T81 m48t35 M48T86 M48Z128 M48Z128V M48Z128Y M48Z129V
    Text: Non-Volatile RAMs KEEP TIME, PROTECT DATA NVRAM products offer fast non-volatile memory solutions up to 16 Mbit density using battery backed SRAM, in both surface mount and through-hole packages. Integrated features include battery and crystal, real time clock, watchdog timer, power-on reset, square wave


    Original     		PDF NL-5652 FLNVRAM/1000 TSOP32 FOOTPRINT NVRAM 1KB SOH28 PCB FOOTPRINT M41T81 m48t35 M48T86 M48Z128 M48Z128V M48Z128Y M48Z129V

    m48t35

    Abstract: NVRAM 1KB M48Z02 M48Z08 M48Z12 M48Z128 M48Z128Y M48Z18 M48Z35 M48Z35V
    Text: ZEROPOWER and TIMEKEEPER NVRAMs BATTERY-BACKED SRAMS, OPTIONAL CLOCK/CALENDAR ZEROPOWER products integrate low power SRAMs with a powerfail control circuit and a long-life lithium battery. The power-fail circuit monitors the external power supply voltage. If this falls below


    Original     		PDF programmable33-3) FLZERO/1198 286-CJ103 m48t35 NVRAM 1KB M48Z02 M48Z08 M48Z12 M48Z128 M48Z128Y M48Z18 M48Z35 M48Z35V

    Untitled

    Abstract: No abstract text available
    Text: M48Z129V 3.3 V, 1 Mbit 128 Kb x 8 ZEROPOWER SRAM Not recommended for new design Features • Integrated, ultra low power SRAM, power-fail control circuit, and battery ■ Conventional SRAM operation; unlimited WRITE cycles ■ 10 years of data retention in the absence of


    Original     		PDF M48Z129V

    STMicroelectronics package outline dip

    Abstract: 17000E DS1386 M48T39Y M48Z129Y
    Text: M48T39Y 256 Kb 32K x8 TIMEKEEPER SRAM PRELIMINARY DATA • INTEGRATED ULTRA LOW POWER SRAM, REAL TIME CLOCK, POWER-FAIL CONTROL CIRCUIT, BATTERY and CRYSTAL ■ BCD CODED YEAR, MONTH, DAY, DATE, HOURS, MINUTES and SECONDS ■ AUTOMATIC POWER-FAIL CHIP DESELECT


    Original     		PDF M48T39Y M48T39Y: STMicroelectronics package outline dip 17000E DS1386 M48T39Y M48Z129Y

    footprint so44

    Abstract: 9977 IC SOCKET TSOP48 TSOP32 FOOTPRINT ST1355 52 pin plcc socket ST19GF34 PSDSoft ST19AF08 serial flash 256Mb fast erase spi
    Text: MEMORY SELECTOR Leading Edge Memories • 1999 GO Why a Broad Range? Leading Edge Memories OTP and UV EPROMs Flash Memories Serial and Parallel EEPROMs ASM and Memory Card ICs Memory Systems and NVRAMs BROAD RANGE STMicroelectronics is a world leader in non-volatile memories, manufacturing a broad


    Original     		PDF operat911) D-90449 BRMEMSEL/0699 footprint so44 9977 IC SOCKET TSOP48 TSOP32 FOOTPRINT ST1355 52 pin plcc socket ST19GF34 PSDSoft ST19AF08 serial flash 256Mb fast erase spi

    14270x

    Abstract: 8107X m48t35 MK48T08 Zeropower M48Z35Y M48Z58 M48Z58Y AN1012 M48Z02
    Text: AN1012 APPLICATION NOTE Predicting the Battery Life and Data Retention Period of NVRAMs Standard SRAM devices have the advantage, over EEPROM and Flash memory, of high write-speed when used as main memory for a processor or microcontroller. Their disadvantage is that they are volatile,


    Original     		PDF AN1012 14270x 8107X m48t35 MK48T08 Zeropower M48Z35Y M48Z58 M48Z58Y AN1012 M48Z02

    TAG 9109

    Abstract: M35080 M95256 equivalent TSOP48 outline EEPROM 16MB NVRAM 1KB TSOP40 "dual access" "nonvolatile memory" -RFID ST1335 asm eagle
    Text: MEMORY SELECTOR Leading Edge Memories • Fall 1998 GO Why a Broad Range? Leading Edge Memories Flash Memories Serial and Parallel EEPROMs Application Specific Memories UV and OTP EPROMs Non-Volatile RAMs BROAD RANGE STMicroelectronics is a world leader in


    Original     		PDF 286-CJ103 TAG 9109 M35080 M95256 equivalent TSOP48 outline EEPROM 16MB NVRAM 1KB TSOP40 "dual access" "nonvolatile memory" -RFID ST1335 asm eagle

    BR1632 safety

    Abstract: BR1632 BR1225X mk48t08 M48T59Y equivalent 8107X application note AN1012 m48t35 Zeropower AN1012
    Text: AN1012 APPLICATION NOTE Predicting the Battery Life and Data Retention Period of NVRAMs Standard SRAM devices have the advantage, over EEPROM and Flash memory, of high write-speed when used as main memory for a processor or microcontroller. Their disadvantage is that they are volatile,


    Original     		PDF AN1012 BR1632 safety BR1632 BR1225X mk48t08 M48T59Y equivalent 8107X application note AN1012 m48t35 Zeropower AN1012

    br1632 br1225

    Abstract: No abstract text available
    Text: AN1012 APPLICATION NOTE Predicting the Battery Life and Data Retention Period of NVRAMs Standard SRAM devices have the advantage, over EEPROM and Flash memory, of high write-speed when used as main memory for a processor or microcontroller. Their disadvantage is that they are volatile,


    Original     		PDF AN1012 br1632 br1225

    Untitled

    Abstract: No abstract text available
    Text: 5 ï. S G S -1H 0M S 0N ILIMMûiêS M48Z129Y M48Z129V 1Mb 128K x 8 ZEROPOWER SRAM PRELIMINARY DATA • INTEGRATED LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT and BATTERY ■ CONVENTIONAL SRAM OPERATION; UNLIMITED WRITE CYCLES ■ 10 YEARS of DATA RETENTION in the


    OCR Scan     		PDF M48Z129Y M48Z129V M48Z129Y: M48Z129V: 128Kx8 PMDIP32 M48Z129V A0-A16

    Untitled

    Abstract: No abstract text available
    Text: M48Z129Y M48Z129V SGS-THOMSON ra [iôm[iOT s Ki(gs 1Mb (128K x 8) ZEROPOWER SRAM PRELIMINARY DATA INTEGRATED LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT and BATTERY CONVENTIONAL SRAM OPERATION; UNLIMITED WRITE CYCLES 10 YEARS of DATA RETENTION in the ABSENCE of POWER


    OCR Scan     		PDF M48Z129Y M48Z129V M48Z129Y: M48Z129V: 128Kx8 PMDIP32

    Untitled

    Abstract: No abstract text available
    Text: / ^ T SGS-THOM SON ^ 7 #» MWilLIIgiiìMDgS M48Z129Y M48Z129V 1Mb 128K x 8 ZEROPOWER SRAM PRELIMINARY DATA • INTEGRATED LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT and BATTERY ■ CONVENTIONAL SRAM OPERATION; UNLIMITED WRITE CYCLES ■ 10 YEARS of DATA RETENTION in the


    OCR Scan     		PDF M48Z129Y M48Z129V M48Z129Y: M48Z129V: PMDIP32 M48Z129Y, PMDIP32