fairchild marking codes sot-23
Abstract: marking of m7 diodes diode M7 marking M3 KST812M6 Diode marking m7 m7 diode M7 marking codes M7 component KST5088
Text: KST812M3/M4/M5/M6/M7 KST812M3/M4/M5/M6/M7 General Purpose Transistor 2 1 SOT-23 1. Base 2. Emitter 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Value -50
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KST812M3/M4/M5/M6/M7
OT-23
KST5088
fairchild marking codes sot-23
marking of m7 diodes
diode M7
marking M3
KST812M6
Diode marking m7
m7 diode
M7 marking codes
M7 component
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BSR56
Abstract: No abstract text available
Text: BSR56 BSR56 N-Channel Low-Frequency Low-Noise Amplifier 3 • This device is designed for low-power chopper or switching application sourced from process 51 2 SOT-23 Mark: M4 1. Drain 2. Source 3. Gate 1 Absolute Maximum Ratings TC=25°C unless otherwise noted
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BSR56
OT-23
BSR56
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BSR56
Abstract: No abstract text available
Text: BSR56 BSR56 N-Channel Low-Frequency Low-Noise Amplifier 3 • This device is designed for low-power chopper or switching application sourced from process 51 2 SOT-23 Mark: M4 1. Drain 2. Source 3. Gate 1 Absolute Maximum Ratings TC=25°C unless otherwise noted
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BSR56
OT-23
BSR56
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KST812M6 transistor
Abstract: KST812M6
Text: PNP EPITAXIAL SILICON TRANSISTOR KST812M3/M4/M5/M6/M7 GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS TA=25°°C Characteristic Symbol Rating Unit -50 -40 -5 -100 350 150 V V V mA mW °C VCBO VCEO VEBO IC PC T STG Collector-Base Voltage Collector-Emitter Voltage
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KST812M3/M4/M5/M6/M7
KST5088
OT-23
KST812M3
KST812M4
KST812M5
KST812M6
KST812M7
KST812M6 transistor
KST812M6
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Untitled
Abstract: No abstract text available
Text: MCC TM Micro Commercial Components 2SA812-M4 2SA812-M5 2SA812-M6 2SA812-M7 omponents 20736 Marilla Street Chatsworth !"# $ % !"# Features • x x • • • PNP Silicon Epitaxial Transistors Lead Free Finish/RoHS Compliant "P" Suffix designates
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2SA812-M4
2SA812-M5
2SA812-M6
2SA812-M7
OT-23
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2SA812-M7
Abstract: 2SA812M5 2SA812 2SA812M6 2SA812-M4
Text: MCC TM Micro Commercial Components 2SA812-M4 2SA812-M5 2SA812-M6 2SA812-M7 omponents 20736 Marilla Street Chatsworth !"# $ % !"# Features • x x • • PNP Silicon Epitaxial Transistors Lead Free Finish/RoHS Compliant "P" Suffix designates
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2SA812-M4
2SA812-M5
2SA812-M6
2SA812-M7
OT-23
hFE600.
2SA812-M7
2SA812M5
2SA812
2SA812M6
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Untitled
Abstract: No abstract text available
Text: MCC TM Micro Commercial Components 2SA812-M4 2SA812-M5 2SA812-M6 2SA812-M7 omponents 20736 Marilla Street Chatsworth !"# $ % !"# Features • x x • • • PNP Silicon Epitaxial Transistors Lead Free Finish/RoHS Compliant "P" Suffix designates
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2SA812-M4
2SA812-M5
2SA812-M6
2SA812-M7
OT-23
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2SA812
Abstract: No abstract text available
Text: MCC TM Micro Commercial Components 2SA812-M4 2SA812-M5 2SA812-M6 2SA812-M7 omponents 20736 Marilla Street Chatsworth !"# $ % !"# Features • x x • • PNP Silicon Epitaxial Transistors Lead Free Finish/RoHS Compliant "P" Suffix designates
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2SA812-M4
2SA812-M5
2SA812-M6
2SA812-M7
OT-23
2SA812
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MMSZ5243
Abstract: N4 SOT23
Text: 500mW ZENER DIODES MMSZ52 SERIES • New Product SOT23 Pkg. TA = 25˚C The latest comprehensive data to fully support these parts is readily available. TAPE & REEL SPECIFICATIONS SOT23 Tape Width Reel Diameter Quantity 8mm 178mm 3,000 8mm 330mm 10,000 Nom.
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500mW
MMSZ52
MMSZ5225
MMSZ5226
MMSZ5227
MMSZ5228
MMSZ5229
MMSZ5230
MMSZ5231
MMSZ5232
MMSZ5243
N4 SOT23
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Untitled
Abstract: No abstract text available
Text: Product specification PMV31XN N-channel TrenchMOS FET Rev. 2 — 30 November 2011 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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PMV31XN
O-236AB)
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sot23-6 marking code M5
Abstract: SOT23-6 MARKING m5 AZP53Q SOT23-6 MARKING x2 SAW MARKING CODE SOT23 AZP53 M1 SOT23-6
Text: AZP54 Low Phase Noise Sine Wave/CMOS to LVPECL Buffer/Divider www.azmicrotek.com DESCRIPTION FEATURES The AZP54 is a sine wave/CMOS to LVPECL buffer optimized for very low phase noise -165dBc/Hz . It is particularly useful in converting crystal or SAW based oscillators into LVPECL outputs for up 800MHz of
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AZP54
AZP54
-165dBc/Hz)
800MHz
AZP63.
AZP63
sot23-6 marking code M5
SOT23-6 MARKING m5
AZP53Q
SOT23-6 MARKING x2
SAW MARKING CODE SOT23
AZP53
M1 SOT23-6
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AZP54
Abstract: No abstract text available
Text: AZP54 Low Phase Noise Sine Wave / CMOS to LVPECL Buffer / Translator www.azmicrotek.com DESCRIPTION FEATURES The AZP54 is a sine wave/CMOS to LVPECL buffer/translator optimized for very low phase noise -165dBc/Hz . It is particularly useful in converting crystal or SAW based oscillators into LVPECL outputs for up
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AZP54
AZP54
-165dBc/Hz)
800MHz
AZP63.
AZP63
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Untitled
Abstract: No abstract text available
Text: AZP54 Low Phase Noise Sine Wave / CMOS to LVPECL Buffer / Translator www.azmicrotek.com DESCRIPTION FEATURES The AZP54 is a sine wave/CMOS to LVPECL buffer/translator optimized for very low phase noise -165dBc/Hz . It is particularly useful in converting crystal or SAW based oscillators into LVPECL outputs for up
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AZP54
AZP54
-165dBc/Hz)
800MHz
AZP63.
AZP63
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enamelled copper wire swg table
Abstract: RS-274-D for all smd components F585-34 BS4520 BS4584 PART 3 MELF 3514 dimensions jigs and fixtures mini project BS4584 102.5 cuzn40pb2
Text: 987 Technical portal and online community for Design Engineers - www.element-14.com PCB Prototyping Accessories . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Bread Boards. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . CAD Software Systems . . . . . . . . . . . . . . . . . . . . .
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element-14
127mm
210x297mm)
420x297mm)
33MTR
enamelled copper wire swg table
RS-274-D
for all smd components
F585-34
BS4520
BS4584 PART 3
MELF 3514 dimensions
jigs and fixtures mini project
BS4584 102.5
cuzn40pb2
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m6 marking transistor sot-23
Abstract: 2SA812 2SC1623 hFE-200 marking m5 m5 marking transistor sot-23
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SA812 SOT-23 TRANSISTOR PNP Unit : mm 1. BASE FEATURES z Complementary to 2SC1623 z High DC Current Gain: hFE=200 TYP.(VCE=-6V,IC=-1mA) z High Voltage: Vceo=-50V 2. EMITTER
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OT-23
2SA812
OT-23
2SC1623
-100A,
-100mA,
-10mA
m6 marking transistor sot-23
2SA812
2SC1623
hFE-200
marking m5
m5 marking transistor sot-23
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SA812 SOT-23 TRANSISTOR PNP Unit : mm 1. BASE FEATURES z Complementary to 2SC1623 z High DC Current Gain: hFE=200 TYP.(VCE=-6V,IC=-1mA) z High Voltage: Vceo=-50V 2. EMITTER
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OT-23
2SA812
OT-23
2SC1623
-100mA,
-10mA
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m6 marking transistor sot-23
Abstract: sot-23 Marking M6 2SA812 Package M5 SOT23 transistor transistor SOT23 m6 M6 SOT23 m5 marking transistor sot-23 dc m7 footprint m6 sot package sot-23 2SC1623
Text: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES z Commplementary to 2SC1623. z High DC current gain:hFE=200typ. 2SA812 Pb Lead-free VCE=-6.0V,IC=-1.0mA z High Voltage: VCEO=-50V APPLICATIONS z Audio frequency, general purpose amplifier
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2SA812
2SC1623.
200typ.
OT-23
BL/SSSTC010
m6 marking transistor sot-23
sot-23 Marking M6
2SA812
Package M5 SOT23 transistor
transistor SOT23 m6
M6 SOT23
m5 marking transistor sot-23
dc m7 footprint
m6 sot package sot-23
2SC1623
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smd j3y
Abstract: SOT89 MARKING CODE SMD MARKING CODE j3y SOT-23 J3Y j3y smd smd code marking wl sot23 k72 sot-23 marking f5 sot-89 smd 2TY SOT-23 MARKING ka6
Text: Micro Commercial Components Corp. Marking Code For MCC's SMD Devices PN# 1N4148W 1N4148WX 1N4148X 1N4448W 1N4448WX 1N4448X 1N914W 1SS181 1SS184 1SS193 1SS226 1SS355 1SS357 1SS389 1SS400 1SS404 2N7002 2N7002DW 2SA1037-Q 2SA1037-R 2SA1037-S 2SA1162-GR 2SA1162-O
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1N4148W
1N4148WX
1N4148X
1N4448W
1N4448WX
1N4448X
1N914W
1SS181
1SS184
1SS193
smd j3y
SOT89 MARKING CODE
SMD MARKING CODE j3y
SOT-23 J3Y
j3y smd
smd code marking wl sot23
k72 sot-23
marking f5 sot-89
smd 2TY
SOT-23 MARKING ka6
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m6 marking transistor sot-23
Abstract: No abstract text available
Text: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES z Commplementary to 2SC1623. z High DC current gain:hFE=200typ. 2SA812 Pb Lead-free VCE=-6.0V,IC=-1.0mA z High Voltage: VCEO=-50V APPLICATIONS z Audio frequency, general purpose amplifier
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2SA812
2SC1623.
200typ.
OT-23
BL/SSSTC010
m6 marking transistor sot-23
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1D-S marking
Abstract: No abstract text available
Text: PNP EPITAXIAL SILICON TRANSISTOR KST812M3/M4/M5/M6/M7 GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Symbol Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation
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KST812M3/M4/M5/M6/M7
OT-23
KST5088
KST812M3
KST812M4
KST812M5
KST812M6
KST812M7
1D-S marking
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NE99532
Abstract: 2sc3358 NE3005B20 NE85637 NE4201 NE1010E 2SC3358 transistor ne3005b-20 NE1005E NEC 8563
Text: NEC/ CALIFORNIA 1SE D bMs?m4 D D o m a i a T IM S - T - it- t r NEC NPN SILICON HIGH FREQUENCY TRANSISTOR NE856 SERIES T'3h21 FEATURES DESCRIPTION AND APPLICATIONS • H IG H G A IN B A N D W ID T H P R O D U C T : f r = 7 G H z The NE856 series of NPN epitaxial silicon transistors Is de
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NE856
NE99532
NE32700
NE32702
NE32708
NE32740A
NE32740B
2sc3358
NE3005B20
NE85637
NE4201
NE1010E
2SC3358 transistor
ne3005b-20
NE1005E
NEC 8563
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Untitled
Abstract: No abstract text available
Text: o TO-247 WT o TO- in CO W) u P3 CIh SOT-22Ì (S) G o • 1-H P3 • l-H <Z) cn DIP-8 <N) <y SO-8 (M) o c - MSOP-8 M M -8 'MM i SOT-23-5 (M5) SOT-143 (M4) 00 CD LO CO 3 s X P3 TO-92 (Z) Gì S ro i <N £ •I Uh CM The minimum point on each line of Figure 2-3 shows package power dissipation capability using “worst
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O-247
OT-22Ì
OT-23-5
OT-143
O-220
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MMBA812M5
Abstract: marking M3 MMBA812M4 MMBA812M3 MMBA812M6
Text: 34 MOTOROLA SC -CDIODES/OPTO} 6367255 MOTOROLA SC DE | b 3 b 7 E S S 003Ô27S a CDIO D E S /O PTO 3 ^C SOT23 continued) 38275 D T - z *- /* MMBA812M3,4,5,6,7 DEVICENO. SMALL-SIGNAL PNP TRANSISTOR TOP VIEW C j • Designed for general-purpose and audio-frequency amplifier
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MMBA812M3
MMBA812M4
MMBA812M5
MMBA812M6
MMBA812M7
marking M3
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Untitled
Abstract: No abstract text available
Text: MIC94030/94031 MIC94030/94031 TinyFET P-Channel MOSFET Preliminary Information General Description Features The MIC94030 and MIC94031 are 4-terminal silicon gate P-channel MOSFETs that provide low on-resistance in a very small package. • 13.5V minimum drain-to-source breakdown
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MIC94030/94031
MIC94030
MIC94031
MIC94030/1
GGE74Ã
OT-23
OT-143
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