transistor equivalent book FOR D 1047
Abstract: MDA770 PBR951,215 Mouser 1998 Transistor B 1566 MCC 90-16
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PBR951 UHF wideband transistor Product specification Supersedes data of 1998 Jun 09 File under Discrete Semiconductors, SC14 1998 Aug 10 Philips Semiconductors Product specification UHF wideband transistor
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M3D088
PBR951
PBR951
SCA60
125104/1200/05/pp16
771-PBR951-T/R
transistor equivalent book FOR D 1047
MDA770
PBR951,215
Mouser 1998
Transistor B 1566
MCC 90-16
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PMV213SN
Abstract: PMV213
Text: PMV213SN µTrenchMOS standard level FET Rev. 02 — 19 February 2003 Product data M3D088 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability: PMV213SN in SOT23.
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PMV213SN
M3D088
PMV213SN
MBB076
MSB003
771-PMV213SN215
PMV213
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sot23 marking V2p
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BFQ67 NPN 8 GHz wideband transistor Product specification Supersedes data of September 1995 1998 Aug 27 NXP Semiconductors Product specification NPN 8 GHz wideband transistor BFQ67 FEATURES DESCRIPTION
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M3D088
BFQ67
BFQ67
MSB003
R77/04/pp12
771-BFQ67-T/R
sot23 marking V2p
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BSV52
Abstract: HIGH SPEED SWITCHING NPN SOT23
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BSV52 NPN switching transistor Product specification Supersedes data of 1999 Apr 15 2004 Jan 14 Philips Semiconductors Product specification NPN switching transistor BSV52 FEATURES PINNING • Low current max. 100 mA
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M3D088
BSV52
MAM255
SCA76
R75/04/pp7
BSV52
HIGH SPEED SWITCHING NPN SOT23
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PMBD6050
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PMBD6050 High-speed diode Product specification Supersedes data of 1999 May 11 2004 Jan 14 Philips Semiconductors Product specification High-speed diode PMBD6050 PINNING FEATURES • Small plastic SMD package
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M3D088
PMBD6050
PMBD6050
SCA76
R76/04/pp10
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BCF29
Abstract: BCF30 BCF32 BCF33 BP317
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BCF29; BCF30 PNP general purpose transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 May 22 Philips Semiconductors Product specification
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M3D088
BCF29;
BCF30
BCF32
BCF33.
SCA54
117047/00/02/pp8
BCF29
BCF30
BCF33
BP317
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PBSS9110T
Abstract: PBSS8110T
Text: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D088 PBSS9110T 100 V, 1 A PNP low VCEsat BISS transistor Product data sheet Supersedes data of 2004 May 06 2004 May 13 NXP Semiconductors Product data sheet 100 V, 1 A PNP low VCEsat (BISS) transistor
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M3D088
PBSS9110T
R75/03/pp12
PBSS9110T
PBSS8110T
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9l marking sot23
Abstract: PLVA2600A PLVA2650A PLVA2653A PLVA2656A PLVA2659A PLVA2662A PLVA2665A PLVA2668A smd diode 9j
Text: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D088 PLVA2600A series Low-voltage avalanche regulator double diodes Product data sheet Supersedes data of 1999 May 10 2001 Oct 15 NXP Semiconductors Product data sheet Low-voltage avalanche regulator double
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M3D088
PLVA2600A
PLVA2650A
PLVA2653A
PLVA2656A
PLVA2659A
PLVA2662A
PLVA2665A
PLVA2668A
9l marking sot23
PLVA2650A
PLVA2653A
PLVA2656A
PLVA2659A
PLVA2662A
PLVA2665A
PLVA2668A
smd diode 9j
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DIODE marking S4 06
Abstract: BAP1321-04
Text: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D088 BAP1321-04 Silicon PIN diode Product specification 2001 Apr 17 NXP Semiconductors Product specification Silicon PIN diode BAP1321-04 FEATURES PINNING • High voltage, current controlled PIN DESCRIPTION
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M3D088
BAP1321-04
MAM107
R77/01/pp8
DIODE marking S4 06
BAP1321-04
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BAP50-05
Abstract: DIODE marking S4 06 SMD MARKING CODE s4
Text: DISCRETE SEMICONDUCTORS DATA SHEET halfpage M3D088 BAP50-05 General purpose PIN diode Product specification Supersedes data of 1999 Feb 01 1999 May 10 NXP Semiconductors Product specification General purpose PIN diode BAP50-05 FEATURES PINNING • Two elements in common cathode configuration in a
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M3D088
BAP50-05
MAM108
R77/02/pp8
BAP50-05
DIODE marking S4 06
SMD MARKING CODE s4
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BC850 SOT23
Abstract: 2FP TRANSISTOR
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BC849; BC850 NPN general purpose transistors Product specification Supersedes data of 1997 Sep 02 File under Discrete Semiconductors, SC10 1998 Aug 06 Philips Semiconductors Product specification NPN general purpose transistors
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M3D088
BC849;
BC850
BC859
BC860.
BC850
BC849
BC849B
BC849C
BC850 SOT23
2FP TRANSISTOR
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BAP50-05
Abstract: DIODE 61 BP
Text: DISCRETE SEMICONDUCTORS DATA SHEET alfpage M3D088 BAP50-05 General purpose PIN diode Product specification Supersedes data of 1999 Feb 01 1999 May 10 Philips Semiconductors Product specification General purpose PIN diode BAP50-05 PINNING FEATURES • Two elements in common cathode configuration in a
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M3D088
BAP50-05
MAM108
125004/00/02/pp8
BAP50-05
DIODE 61 BP
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BAP50-04
Abstract: MAM232
Text: DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D088 BAP50-04 General purpose PIN diode Product specification Supersedes data of 1999 May 10 1999 Dec 03 Philips Semiconductors Product specification General purpose PIN diode BAP50-04 FEATURES PINNING • Two elements in series configuration in a small-sized
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M3D088
BAP50-04
MAM232
125004/02/pp8
BAP50-04
MAM232
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BP317
Abstract: BSH104 pc 817 smd
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BSH104 N-channel enhancement mode MOS transistor Objective specification File under Discrete Semiconductors, SC13b 1997 Nov 26 Philips Semiconductors Objective specification N-channel enhancement mode
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M3D088
BSH104
SC13b
SCA56
137107/00/01/pp8
BP317
BSH104
pc 817 smd
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BC857
Abstract: BC846 BC847 BC848 BC856 BC856A BC856B BC857A BC857B BC858
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BC856; BC857; BC858 PNP general purpose transistors Product specification Supersedes data of 1999 Apr 12 2002 Feb 04 Philips Semiconductors Product specification PNP general purpose transistors BC856; BC857; BC858
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M3D088
BC856;
BC857;
BC858
BC846,
BC847
BC848.
BC857
BC846
BC848
BC856
BC856A
BC856B
BC857A
BC857B
BC858
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smd transistor L44
Abstract: BAT54 BAT54A BAT54C BAT54S MLC359
Text: DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D088 BAT54 series Schottky barrier double diodes Product specification Supersedes data of 1996 Mar 19 1999 May 06 Philips Semiconductors Product specification Schottky barrier (double) diodes FEATURES BAT54 series
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M3D088
BAT54
BAT54
MLC360
BAT54A
115002/00/02/pp8
smd transistor L44
BAT54C
BAT54S
MLC359
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT M3D088 PBSS4230T 30 V, 2 A NPN low VCEsat BISS transistor Product data sheet 2003 Sep 29 NXP Semiconductors Product data sheet 30 V, 2 A NPN low VCEsat (BISS) transistor PBSS4230T FEATURES QUICK REFERENCE DATA • Low collector-emitter saturation voltage VCEsat
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M3D088
PBSS4230T
R75/01/pp7
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smd diode schottky code marking 1d sot23
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET age M3D088 M3D071 BAS40 series Schottky barrier double diodes Product specification Supersedes data of 1999 Apr 28 2001 Oct 10 Philips Semiconductors Product specification Schottky barrier (double) diodes FEATURES BAS40 series
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M3D088
M3D071
BAS40
BAS40
BAS40-04
BAS40-05
BAS40-06
SCA73
613514/05/pp8
smd diode schottky code marking 1d sot23
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT M3D088 PBSS4120T 20 V, 1 A NPN low VCEsat BISS transistor Product data sheet 2003 Sep 29 NXP Semiconductors Product data sheet 20 V, 1 A NPN low VCEsat (BISS) transistor PBSS4120T FEATURES QUICK REFERENCE DATA • Low collector-emitter saturation voltage VCEsat
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M3D088
PBSS4120T
R75/01/pp7
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BAS29
Abstract: BAS31 BAS35 l21 smd code
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BAS29; BAS31; BAS35 General purpose controlled avalanche double diodes Product specification Supersedes data of 1996 Sep 10 1999 May 21 Philips Semiconductors Product specification General purpose controlled avalanche
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M3D088
BAS29;
BAS31;
BAS35
BAS29
BAS31
BAS29
BAS31
BAS35
l21 smd code
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Philips MARKING CODE
Abstract: 2108 npn transistor BP317 PDTC143TT
Text: DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D088 PDTC143TT NPN resistor-equipped transistor Product specification Supersedes data of 1998 May 29 1999 May 21 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC143TT FEATURES
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M3D088
PDTC143TT
115002/00/02/pp8
Philips MARKING CODE
2108 npn transistor
BP317
PDTC143TT
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MBB691
Abstract: MBB076 MAR 745 TRANSISTOR MBB692 MSB003 PMBF107
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PMBF107 N-channel enhancement mode vertical D-MOS transistor Product specification Supersedes data of April 1995 File under Discrete Semiconductors, SC13b 1998 Mar 06 Philips Semiconductors Product specification
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M3D088
PMBF107
SC13b
SCA54
135108/00/03/pp8
MBB691
MBB076
MAR 745 TRANSISTOR
MBB692
MSB003
PMBF107
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marking code 10 sot23
Abstract: BP317 PMBT5401 PMBT5550
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PMBT5550 NPN high-voltage transistor Product specification Supersedes data of 1997 Jun 16 1999 Apr 15 Philips Semiconductors Product specification NPN high-voltage transistor PMBT5550 FEATURES PINNING
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M3D088
PMBT5550
PMBT5401.
MAM255
SCA63
115002/00/03/pp8
marking code 10 sot23
BP317
PMBT5401
PMBT5550
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PDTA123ET
Abstract: PDTC123ET marking code 10 sot23
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PDTA123ET PNP resistor-equipped transistor Product specification Supersedes data of 1998 May 18 1999 May 21 Philips Semiconductors Product specification PNP resistor-equipped transistor PDTA123ET FEATURES
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M3D088
PDTA123ET
MAM100
115002/00/03/pp8
PDTA123ET
PDTC123ET
marking code 10 sot23
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