THERMAL Fuse m20 tf 115 c
Abstract: m33 tf 130 THERMAL Fuse m30 tf 125 c M33 thermal fuse M33 fuse m20 thermal fuse 115 THERMAL Fuse jfm m33 thermal fuse M10 microtherm m33 thermal fuse THERMAL Fuse m20
Text: Thermal Fuses JFM M Features: ● Small physical size,ensures fast response to overtemperature. ● 1A 240Vac rated ● Thermal element protected mechanically and against oxidization. ● Single shot.Non resettable. ● Accurate melting points,range from 102°C to
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240Vac
E142267
CAL0023R
4510-8800AC1
dtp-500
THERMAL Fuse m20 tf 115 c
m33 tf 130
THERMAL Fuse m30 tf 125 c
M33 thermal fuse
M33 fuse
m20 thermal fuse 115
THERMAL Fuse jfm m33
thermal fuse M10
microtherm m33 thermal fuse
THERMAL Fuse m20
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2SJ449
Abstract: m30 tf 125 transistor 2sj449 M30 THERMAL CUTOFF IEI-1213 MEI-1202 MF-1134
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ449 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SJ449 is P-Channel MOS Field Effect Transistor de- PACKAGE DIMENSIONS signed for high voltage switching applications. in millimeters 4.5 ±0.2
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2SJ449
2SJ449
m30 tf 125
transistor 2sj449
M30 THERMAL CUTOFF
IEI-1213
MEI-1202
MF-1134
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2SJ449
Abstract: IEI-1213 MEI-1202 MF-1134
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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XS2M12PA370L1
Abstract: Telemecanique XSC-h203629 walkie talkie circuit diagram XS8E1A1PAL01M12 XS630B XS612B xsc-h207629 Telemecanique XS2m XS4P18AB120 telemecanique xs4
Text: Proximity Sensors Catalog September File 9006 07 CONTENTS Selection Guide . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Auto-Adaptable and Standard Flat Inductive Proximity Sensor . . . . . . . 180 Auto-Adaptable and Standard Tubular Inductive Proximity Sensor . . . . 184
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Infor30FB260A
XS3P30MB230A
XS3P30FB260K
XS3P30MB230K
XS4P12FA260
XS4P12MA230
XS4P12FA260K
XS4P12MA230K
XS4P12FB260
XS4P12MB230
XS2M12PA370L1
Telemecanique XSC-h203629
walkie talkie circuit diagram
XS8E1A1PAL01M12
XS630B
XS612B
xsc-h207629
Telemecanique XS2m
XS4P18AB120
telemecanique xs4
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C11892E
Abstract: 2SJ495 TEA-1035 A3856 m30 tf 125
Text: DATA SHEET MOS FIELD EFFECT POWER TRANSISTORS 2SJ495 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS This product is P-Channel MOS Field Effect Transistor in millimeter designed for high current switching applications. 10.0 ± 0.3
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2SJ495
C11892E
2SJ495
TEA-1035
A3856
m30 tf 125
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carlogavazzi
Abstract: K7M-DR20U K7M-DR60u K7M-DR40U K7M-DR30U K7M-DRT40U koyo PLC module PMU LG PMU-830TT PMU-300BT
Text: Overview2004CA.qk 12/16/04 11:29 AM Page 1 Gross Automation 877 268-3700 • www.carlogavazzisales.com · sales@grossautomation.com Overview2004CA.qk 12/16/04 11:29 AM Page 2 CARLO GAVAZZI – A Global Force In Offering the Complete Package CARLO GAVAZZI offers a vast array of high quality products, which provide you the optimum solutions to your
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Overview2004CA
yo1500
GH64404412
G81104406
G82104406
G85101101
G85102201
G85103301
G34485234
carlogavazzi
K7M-DR20U
K7M-DR60u
K7M-DR40U
K7M-DR30U
K7M-DRT40U
koyo PLC module
PMU LG
PMU-830TT
PMU-300BT
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2SJ598 equivalent
Abstract: 2SJ598 2SJ598-Z 2sJ598 transistor M2SJ598
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ598 SWITCHING P-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION The 2SJ598 is P-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver. PART NUMBER PACKAGE 2SJ598 TO-251 MP-3 2SJ598-Z
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2SJ598
2SJ598
O-251
2SJ598-Z
O-252
O-251/TO-252
O-251)
2SJ598 equivalent
2SJ598-Z
2sJ598 transistor
M2SJ598
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M2SJ598
Abstract: 2SJ598 equivalent 2sJ598 transistor 2SJ598 2SJ598-Z
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ598 SWITCHING P-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION The 2SJ598 is P-channel MOS Field Effect Transistor designed PART NUMBER PACKAGE 2SJ598 TO-251 MP-3 2SJ598-Z TO-252 (MP-3Z) for solenoid, motor and lamp driver.
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2SJ598
2SJ598
O-251
2SJ598-Z
O-252
O-251/TO-252
O-251)
M2SJ598
2SJ598 equivalent
2sJ598 transistor
2SJ598-Z
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k244 transistor
Abstract: AL-P11 k244 PX1-C12S PX1-C18S AL-SP21 PM2S sK413 AL-SK21 AL-SN31
Text: Limit Switches General information Limit switches, AL and K244 series • Description FUJI AL and K244 series limit switches have wide application in such industrial equipment as machine tools, printing machines, and transfer machines. These switches feature a sturdy aluminum diecast housing that is highly resistant to oil,
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SI-1020
SF-2025
SK-580
K244-xP-2
K244-gR-2
DEC1905a
k244 transistor
AL-P11
k244
PX1-C12S
PX1-C18S
AL-SP21
PM2S
sK413
AL-SK21
AL-SN31
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T6950A
Abstract: AQS51-KAM t6961 CLCM1H112 M07M-A10 H7015B1020 EW7731A4000 VA3300 R8810A1018 K42008268-001
Text: Product catalog ACS Environmental Controls Honeywell Srl ACS Environmental Controls Via Philips, 12 20052 Monza Telefono: +39 039 2165.1 Email: info@honeywell.it Honeywell A.Ş. Otomasyon ve Kontrol Sistemleri Çayıryolu Sokak, Üçgen Plaza, No:7 Kat:5/6/7
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UK3B-0006IT0H-R1010
KSW24
KSW230
T6950A
AQS51-KAM
t6961
CLCM1H112
M07M-A10
H7015B1020
EW7731A4000
VA3300
R8810A1018
K42008268-001
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dc m7
Abstract: PA2211T1M
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR PA2211T1M P-CHANNEL MOS FET FOR SWITCHING PACKAGE DRAWING Unit: mm DESCRIPTION The μ PA2211T1M is P-channel MOS Field Effect Transistor designed 2.9±0.1 for power management applications of portable equipments, such as
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PA2211T1M
PA2211T1M
PA2211T1M-T2-AT
dc m7
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HS-5104RH
Abstract: HS1-5104RH qnt 361 on29 km447 AD437 DIFFERENTIAL/HS1-5104RH
Text: HARR IS SEMICON] SE CTO R SflE D • 430 227 1 DG 43 7b ê flüM H H A S HS-5104RH HARRIS SEMICONDUCTOR - F 7 ? 'û S - ¥ 0 Radiation Hardened Low Noise Quad Operational Amplifier D ecem ber 1992 Pinout Features HS1-5104RH 14 PIN CERAMIC SIDEBRAZED DIP)
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D0H37bfi
HS-5104RH
124x108x11
280jim)
HS-5104RH
HS1-5104RH
qnt 361
on29
km447
AD437
DIFFERENTIAL/HS1-5104RH
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tba120s
Abstract: No abstract text available
Text: A PLESSEY W Solid State » TBA120S LIMITING IF AMPUFIER/FM DETECTOR The TBA120S is a symmetrical 8 -stage lim itin g am plifier w ith a symmetrical coincidence demodulator and remote DC volume control. The circu it is especially suited fo r the sound IF section o f T V receivers and fo r FM /IF
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TBA120S
TBA120S
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Untitled
Abstract: No abstract text available
Text: AMPLIFONIX INC MSE D • Of lObEE? □□□□Q4S 3 ■ AFX Full Perform ance Am plifiers ■B- 7 < > -g 9 - 5 / Flatpack Package i-^ -c r -o i Model No. Freq. Range MHz FP6146 FP9130 5-500 200-2000 Gain m Typ 21.0 23.5 Min 20.5 22.0 Noise Figure (dB) Typ
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FP6146
FP9130
TL9002
TL9004
080TYPh
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Untitled
Abstract: No abstract text available
Text: A dvanced P o w er Te c h n o l o g y APT10M25BNFR APT10M30BNFR POWER MOS IV‘ 100V 75A 0.025Q 100V 75A 0.030Q AVALANCHE RATED FREDFET N -C H A NN EL ENHANCEMENT MODE LOW VOLTAGE POWER FREDFETS MAXIMUM RATINGS Symbol V DSS All Ratings: Tc = 25°C unless otherwise specified.
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APT10M25BNFR
APT10M30BNFR
O-247AD
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Untitled
Abstract: No abstract text available
Text: •I 43 02 27 1 0 Q S 3 7 b l 35fl ■ HAS 2N6788 Jg HARRIS N-Channel Enhancement-Mode Power Field-Effect Transistor August 1991 Features Package T0-205A F BOTTOM VIEW • 6.0 A , 1 0 0V • rD S on = 0 - 3 0 n • S O A is P o w er-D issip atio n Lim ited
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2N6788
T0-205A
LH0Q63
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Untitled
Abstract: No abstract text available
Text: MWS5114 HARRIS S E M I C O N D U C T O R 1024-Word x 4-Bit LSI Static RAM August 1996 Description Features • The M W S5114 is a 1024 word by 4-bit static random access memory that uses the ion-implanted silicon gate comple mentary MOS CMOS technology. It is designed for use in
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MWS5114
1024-Word
S5114
MWS5114-3
MWS5114-2
MWS5114-1
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Untitled
Abstract: No abstract text available
Text: S^E » • 02 57 5 2 7 0D313D4 587 IAÎ1D3 ADV MICRO TELECOM P R E L IM IN A R Y A m 7 9 C 0 2 /3 (A ) Adva^ Dual Subscriber Line Audio-Processing Circuit (DSLAC Device) Devices DISTINCTIVE CHARACTERISTICS ■ Software programmable: -SLIC impedance -Trans-hybrid balance
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0D313D4
Am79C02/3A
096-MHz
PL028
PL032
CD040
PD040
PL044
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Untitled
Abstract: No abstract text available
Text: HARRIS SEMICOND SECTOR bflE D HARRIS SEMI CONDUCT OR REGISTRATION PENDING Currently Available as FRS9240 D, R, H • L»30EE71 0051200 TMT ■ 2N7319D, 2N7319H 2N7319H Radiation Hardened P-Channel Power MOSFETs November 1993 Package Features • HAS 7A, -200V, RDS(on) = 0.735Q
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FRS9240
30EE71
2N7319D,
2N7319H
-200V,
O-257AA
100KRAD
300KRAD
1000KRAD
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Cdb450c24
Abstract: 5PNR-2876Z Cdb450 CFWM450G BA4116FV g015b K4-18 SSOP-B16 CFWM450 BM116FV
Text: Communication ICs FM IF detector for cordless telephones I BA4116FV The BM 116FV is an IC with an internal mixing circuit, IF circuit, wave detection circuit, RSSI circuit, and noise detec tion circuit. Because it can operate at low voltages, it is ideal for use in cordless telephones.
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BA4116FV
BM116FV
10MHz
150MHz
G015bbb
SSOP-B16
Cdb450c24
5PNR-2876Z
Cdb450
CFWM450G
BA4116FV
g015b
K4-18
SSOP-B16
CFWM450
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1006-01M
Abstract: 006-01M bc10d 2BSK
Text: Fuji New Semiconductor Products . -r- J T ~ Sk I ^ t — J v ' I . Tty h 1 \ y 6 0 0 V /1 0 A I O D Ï 1 M B C 1 0 -0 6 0 , 1 M B C 1 0 D -0 6 0 ,1 M B G 1 0 D -0 6 0 Features K 2 < 7 V '° 7 / r - v lE J S fc sifjfc'fefe, i f 4 '7 < RBSOA, SCSOA 4' ¿f
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1MBG10D-060
1006-01M
006-01M
bc10d
2BSK
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m33 tf 130
Abstract: 1001 fba hybrid
Text: Am79C02/03/031 A A M D ÎI Dual Subscriber Line Audio ProcessingCircuit (DSLAC ) Devices TABLE OF CONTENTS Distinctive C h a ra c te ris tic s .2-7
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Am79C02/03/031
79C02
79C031
79C03
Am79C031
m33 tf 130
1001 fba hybrid
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Untitled
Abstract: No abstract text available
Text: • 43 05 57 1 0 0 5 4 0 ^ 5 SSI ■ HAS IRFD12 0 /1 2 1 /1 2 2 /1 2 3 IRFD120R/121R/122R/123R I HARRIS N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Features Package 4-PIN DIP TO P VIEW • 1.3A and 1.1 A, 80V - 100V • rDS(on) = 0-30n and 0.40ii
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IRFD12
IRFD120R/121R/122R/123R
0-30n
IRFD120,
IRFD121,
IRFD122,
IRFD123
IRFD120R,
IRFD121R,
IRFD122R,
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