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    KM44C1000

    Abstract: km44c1000bj KM44C1000BJ6 KM44C1000BP-7
    Text: SAMSUNG ELECTRONICS INC L7E i 7^4142 DDISbHT B47 « S P I Ù K CMOS DRAM KM44C1000B 1 M x 4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM44C1000B is a high speed CMOS 1,048,516 x 4 Dynamic Random Access Memory. Its de­


    OCR Scan     		PDF KM44C1000B KM44C1000B 110ns KM44C1000B-7 130ns KM44C1000B-8 150ns KM44C1000B-6 20-LEAD KM44C1000 km44c1000bj KM44C1000BJ6 KM44C1000BP-7

    Cdb450c24

    Abstract: 5PNR-2876Z Cdb450 CFWM450G BA4116FV g015b K4-18 SSOP-B16 CFWM450 BM116FV
    Text: Communication ICs FM IF detector for cordless telephones I BA4116FV The BM 116FV is an IC with an internal mixing circuit, IF circuit, wave detection circuit, RSSI circuit, and noise detec­ tion circuit. Because it can operate at low voltages, it is ideal for use in cordless telephones.


    OCR Scan     		PDF BA4116FV BM116FV 10MHz 150MHz G015bbb SSOP-B16 Cdb450c24 5PNR-2876Z Cdb450 CFWM450G BA4116FV g015b K4-18 SSOP-B16 CFWM450