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    Untitled

    Abstract: No abstract text available
    Text: •I 43 02 27 1 0 Q S 3 7 b l 35fl ■ HAS 2N6788 Jg HARRIS N-Channel Enhancement-Mode Power Field-Effect Transistor August 1991 Features Package T0-205A F BOTTOM VIEW • 6.0 A , 1 0 0V • rD S on = 0 - 3 0 n • S O A is P o w er-D issip atio n Lim ited


    OCR Scan     		PDF 2N6788 T0-205A LH0Q63

    irfg 40

    Abstract: IRFG113 9396
    Text: H E D | 4Ô5S45S 5 | Data Sheet No. PD-9.396B INT ERNATIONAL R EC T IFIER INTERNATIONAL RECTIFIER I O R T -39-13 IRFGHO HEXFET TRANSISTORS IRFG113 4 N-CHANNEL POWER MOSPETs 14 LEAD D U AL-IN-LIN E QUAD CERAM IC SID E BRAZED PACKAGE 100 Volt, 0.8 Ohm , 1.0 Ohm


    OCR Scan     		PDF 5S45S IRFG113 G-616 irfg 40 IRFG113 9396