Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    M2A PACKAGE Search Results

    M2A PACKAGE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPH9R00CQH Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 150 V, 64 A, 0.009 Ohm@10V, SOP Advance / SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPH2R408QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 120 A, 0.00243 Ohm@10V, SOP Advance Visit Toshiba Electronic Devices & Storage Corporation
    XPH2R106NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 110 A, 0.0021 Ω@10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    XPH3R206NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 70 A, 0.0032 Ω@10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    TPH4R008QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 86 A, 0.004 Ohm@10V, SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation

    M2A PACKAGE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    M2A transistor

    Abstract: No abstract text available
    Text: M2A SERIES DIMENSIONS M2A General Tolerance：±0.2mm HOW TO ORDER M2A- L- □ - □ Package： T/R = Tape & Reel Soldering： V = Lead Free Solderable Terminal Type： L = J Bend Miniature Double Action Tact Switch SPECIFICATION MATERIAL △MECHANICAL Operation Force: 1st 80 ±40gf


    Original     		PDF 12VDC 100VDC 250VAC/1 260max. 10sec 150sec 60sec M2A transistor

    M2AC

    Abstract: No abstract text available
    Text: M2A / M2AC Double-Balanced Mixer Rev. V3 Features • • • • • Product Image LO 10 to 1500 MHz RF 10 to 1500 MHz IF DC to 800 MHz LO Drive +7 dBm nominal High Isolation 35 dB (typ) Description The M2A is a double balanced mixer, designed for use in military,


    Original     		PDF MILSTD-883, MIL-STD-202, MIL-DTL-28837, M2AC

    Untitled

    Abstract: No abstract text available
    Text: Double-Balanced Mixer M2A/M2AC V3 Features • • • • • Product Image LO 10 to 1500 MHz RF 10 to 1500 MHz IF DC to 800 MHz LO Drive +7 dBm nominal High Isolation 35 dB (typ) Description The M2A is a double balanced mixer, designed for use in military,


    Original     		PDF MILSTD-883, MIL-STD-202, MIL-DTL-28837,

    M2AC

    Abstract: M2A Package
    Text: M2A/M2AC DOUBLE-BALANCED MIXER • LO 10 TO 1500 MHz · RF 10 TO 1500 MHz · IF DC TO 800 MHz · LO DRIVE: +7 dBm nominal · HIGH ISOLATION: 35 dB (TYP.) Specifications (Rev. Date: 6/02)* Characteristics Typical SSB Conversion Loss & SSB Noise Figure (max.)


    Original     		PDF 50-ohm M2AC M2A Package

    Untitled

    Abstract: No abstract text available
    Text: M2A/M2AC DOUBLE-BALANCED MIXER • LO 10 TO 1500 MHz · RF 10 TO 1500 MHz · IF DC TO 800 MHz · LO DRIVE +7 dBm nominal · HIGH ISOLATION 35 dB (TYP.) Specifications (Rev. Date: 12/01)* Characteristics Typical SSB Conversion Loss & SSB Noise Figure (max.)


    Original     		PDF 50-ohm

    ELM1314-30F

    Abstract: No abstract text available
    Text: ELM1314-30F/001 Ku-Band Internally Matched FET FEATURES ・High Output Power: P1dB=44.5dBm Typ. ・High Gain: G1dB=5.5dB(Typ.) ・High PAE: ηadd=22%(Typ.) ・Broad Band: 13.75～14.5GHz ・Impedance Matched Zin/Zout = 50Ω ・Hermetically Sealed Package


    Original     		PDF ELM1314-30F/001 ELM1314-30F/001 1906B, ELM1314-30F

    elm1414-30f

    Abstract: 40938
    Text: ELM1414-30F/001 Ku-Band Internally Matched FET FEATURES ・High Output Power: P1dB=44.5dBm Typ. ・High Gain: G1dB=6.0dB(Typ.) ・High PAE: ηadd=22%(Typ.) ・Broad Band: 14.00～14.5GHz ・Impedance Matched Zin/Zout = 50Ω ・Hermetically Sealed Package


    Original     		PDF ELM1414-30F/001 ELM1414-30F/001 1906B, elm1414-30f 40938

    ELM1414-30F

    Abstract: ED-4701 1425GHz
    Text: ELM1414-30F Ku-Band Internally Matched FET FEATURES ・High Output Power: P1dB=45.0dBm Typ. ・High Gain: G1dB=5.5dB(Typ.) ・High PAE: ηadd=24%(Typ.) ・Broad Band: 14.0~14.5GHz ・Impedance Matched Zin/Zout = 50Ω ・Hermetically Sealed Package DESCRIPTION


    Original     		PDF ELM1414-30F ELM1414-30F 1906B, ED-4701 1425GHz

    ELM1314-30F

    Abstract: ED-4701
    Text: ELM1314-30F Ku-Band Internally Matched FET FEATURES ・High Output Power: P1dB=45.0dBm Typ. ・High Gain: G1dB=5.0dB(Typ.) ・High PAE: ηadd=24%(Typ.) ・Broad Band: 13.75～14.5GHz ・Impedance Matched Zin/Zout = 50Ω ・Hermetically Sealed Package DESCRIPTION


    Original     		PDF ELM1314-30F ELM1314-30F 1906B, ED-4701

    CAPACITOR M2B

    Abstract: LTC4056 LTC4412 design ideas 2N7002 IRF7329 LTC3252 ZXT1M322
    Text: DESIGN IDEAS Inductorless, Efficient Step-Down DC/DC Converter Provides Dual Low Noise Outputs in Spaceby Bill Walter Constrained Designs Introduction Increase Battery Run Time Linear Technology’s new LTC3252 switched capacitor step-down DC/ DC converter squeezes dual adjustable outputs into a space saving 3mm


    Original     		PDF LTC3252 250mA LTC3252 500mA LTC4056 CAPACITOR M2B LTC4056 LTC4412 design ideas 2N7002 IRF7329 ZXT1M322

    M2A transistor

    Abstract: M2A MARKING SOT-23 sot23 m2a SBT42 SBT92 M2A SOT23
    Text: SBT92 Semiconductor PNP Silicon Transistor Descriptions • High voltage application • Telephone application Features • Collector-Emitter voltage : VCEO=SBT92 : -300V • Complementary pair with SBT42 Ordering Information Type NO. Marking SBT92 Package Code


    Original     		PDF SBT92 -300V SBT42 OT-23 KST-2041-002 -30mA -20mA, M2A transistor M2A MARKING SOT-23 sot23 m2a SBT42 SBT92 M2A SOT23

    M2A transistor

    Abstract: K 2078 SBT42F SBT92 SBT92F
    Text: SBT92F Semiconductor PNP Silicon Transistor Descriptions • High voltage application • Telephone application Features • Collector-Emitter voltage : VCEO=SBT92 : -300V • Complementary pair with SBT42F Ordering Information Type NO. Marking SBT92F Package Code


    Original     		PDF SBT92F SBT92 -300V SBT42F OT-23F KST-2078-000 -30mA -20mA, M2A transistor K 2078 SBT42F SBT92 SBT92F

    2SK125

    Abstract: m2a marking
    Text: 2SK1259 Switching Diodes MA122 Silicon epitaxial planer type Unit : mm For switching circuits +0.2 2.8 –0.3 +0.25 4 3 +0.1 0 to 0.05 0.1 to 0.3 0.4±0.2 • Absolute Maximum Ratings Ta= 25˚C 1 : Cathode 1 4 : Cathode 3 2 : Cathode 2 5 : Cathode 4 3 : Anode 3, 4


    Original     		PDF 2SK1259 MA122 2SK125 m2a marking

    AC163

    Abstract: SMD M2A SMD M2A transistor 54AC163 54ACT163 54ACT163DMQB 54ACT163LMQB 5962-9172301M2A 5962-9172301MEA m2a marking
    Text: National P/N 54ACT163 - 4-Bit Binary Counter, Synchronous Reset Products > Military/Aerospace > Logic > FACT ACT > 54ACT163 54ACT163 Product Folder 4-Bit Binary Counter, Synchronous Reset General Description Features Package & Models Datasheet Samples & Pricing


    Original     		PDF 54ACT163 54ACT163 54AC163 MN54ACT163-X MV54ACT163-X 12-Nov-98 AC163 SMD M2A SMD M2A transistor 54ACT163DMQB 54ACT163LMQB 5962-9172301M2A 5962-9172301MEA m2a marking

    MARKING R7 SOT-363

    Abstract: No abstract text available
    Text: MMDT2222A DUAL SURFACE MOUNT NPN TRANSISTORS This device contains two electrically-isolated 2N2222A NPN transistors. The two transistors have well matched hFE and are encapsulated in an ultra-small SOT-363 SC70-6L package. This device is ideal for portable


    Original     		PDF MMDT2222A 2N2222A OT-363 SC70-6L) MMDT2222A T/R13 MARKING R7 SOT-363

    Untitled

    Abstract: No abstract text available
    Text: Microprocessor Supervisory Circuit ADM1232 FEATURES VCC TOLERANCE 5%/10% TOLERANCE SELECT VREF RESET RESET PB RESET DEBOUNCE TD WATCHDOG TIME-BASE SELECT WATCHDOG TIMER STROBE 07522-001 APPLICATIONS FUNCTIONAL BLOCK DIAGRAM RESET GENERATOR Pin-compatible with MAX1232 and Dallas DS1232


    Original     		PDF ADM1232 MAX1232 DS1232 ADM1232 RW-16

    MA4SD10

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA4SD10 Silicon epitaxial planar type For super-high-speed switching circuits Unit: mm 1.6±0.05 1.0±0.05 • Features  Two isolated elements are contained in one package, allowing high-density


    Original     		PDF 2002/95/EC) MA4SD10 MA4SD10

    MA4SD10

    Abstract: m2a marking
    Text: Schottky Barrier Diodes SBD MA4SD10 Silicon epitaxial planar type For super-high-speed switching circuits Unit: mm 1.6±0.05 1.0±0.05 • Features  Two isolated elements are contained in one package, allowing high-density mounting  Low forward voltage VF


    Original     		PDF MA4SD10 MA4SD10 m2a marking

    M2A transistor

    Abstract: 2N2222A MMDT2222A SC70-6L
    Text: MMDT2222A DUAL SURFACE MOUNT NPN TRANSISTORS This device contains two electrically-isolated 2N2222A NPN transistors. The two transistors have well matched hFE and are encapsulated in an ultra-small SOT-363 SC70-6L package. This device is ideal for portable


    Original     		PDF MMDT2222A 2N2222A OT-363 SC70-6L) 2002/95/EC MMDT2222A T/R13 M2A transistor SC70-6L

    M2A transistor

    Abstract: 2N2222A MMDT2222A SC70-6L 2N2222A npn transistor
    Text: MMDT2222A DUAL SURFACE MOUNT NPN TRANSISTORS This device contains two electrically-isolated 2N2222A NPN transistors. The two transistors have well matched hFE and are encapsulated in an ultra-small SOT-363 SC70-6L package. This device is ideal for portable


    Original     		PDF MMDT2222A 2N2222A OT-363 SC70-6L) MMDT2222A T/R13 M2A transistor SC70-6L 2N2222A npn transistor

    Untitled

    Abstract: No abstract text available
    Text: MMDT2222A DUAL SURFACE MOUNT NPN TRANSISTORS This device contains two electrically-isolated 2N2222A NPN transistors. The two transistors have well matched hFE and are encapsulated in an ultra-small SOT-363 SC70-6L package. This device is ideal for portable


    Original     		PDF MMDT2222A 2N2222A OT-363 SC70-6L) 2002/95/EC MMDT2222A T/R13

    Untitled

    Abstract: No abstract text available
    Text: MMDT2222A DUAL SURFACE MOUNT NPN TRANSISTORS This device contains two electrically-isolated 2N2222A NPN transistors. The two transistors have well matched hFE and are encapsulated in an ultra-small SOT-363 SC70-6L package. This device is ideal for portable


    Original     		PDF MMDT2222A 2N2222A OT-363 SC70-6L) 2002/95/EC MMDT2222A T/R13

    ADM1232ANZ

    Abstract: ADM1232AN ADM1232 ADM1232ARNZ DS1232 DS1232LP MAX1232 MO-187-AA
    Text: Microprocessor Supervisory Circuit ADM1232 APPLICATIONS FUNCTIONAL BLOCK DIAGRAM VCC TOLERANCE 5%/10% TOLERANCE SELECT VREF PB RESET DEBOUNCE TD WATCHDOG TIME-BASE SELECT RESET RESET WATCHDOG TIMER STROBE 07522-001 Pin-compatible with MAX1232 and Dallas DS1232


    Original     		PDF ADM1232 MAX1232 DS1232 ADM1232 RW-16 ADM1232ANZ ADM1232AN ADM1232ARNZ DS1232 DS1232LP MO-187-AA

    SMD M2A transistor

    Abstract: 6 pin TRANSISTOR SMD CODE XI TRANSISTOR SMD MARKING CODE M2A K TRANSISTOR SMD MARKING CODE T04 TRANSISTOR SMD MARKING CODE XI SMD M2A pnp transistor transistor SMD t04 TRANSISTOR SMD MARKING CODE KE sla 6102 transistor SMD t15
    Text: SIEMENS fl23SbOS OOTbbOl 5 -V L ow -D ro p Fixed V oltage Regulator M2a T L E 4269 Features • • • • • • • • • • Output voltage tolerance < ± 2 % Very low current consumption Early warning Reset output low doown to VQ = 1 V Overtemperature protection


    OCR Scan     		PDF 23SbOS Q67000-A9190 Q67006-A9173 Q67006-A9288 P-DSO-14-4 Q67006-A9192 35x45Â P-DSO-20-6 ffl52l20x SMD M2A transistor 6 pin TRANSISTOR SMD CODE XI TRANSISTOR SMD MARKING CODE M2A K TRANSISTOR SMD MARKING CODE T04 TRANSISTOR SMD MARKING CODE XI SMD M2A pnp transistor transistor SMD t04 TRANSISTOR SMD MARKING CODE KE sla 6102 transistor SMD t15