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    M28C16A Search Results

    M28C16A Datasheets (16)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    M28C16A STMicroelectronics 16K (2K X8) PARALLEL EEPROM Original PDF
    M28C16A-15BS6T STMicroelectronics 16 Kbit (2Kb x8) Parallel EEPROM Original PDF
    M28C16A-15WBS6T STMicroelectronics 16 Kbit (2Kb x8) Parallel EEPROM Original PDF
    M28C16A-15WKA6T STMicroelectronics 16 Kbit (2Kb x8) Parallel EEPROM Original PDF
    M28C16A-15WMS6T STMicroelectronics 16 Kbit (2Kb x8) Parallel EEPROM Original PDF
    M28C16A-20BS6T STMicroelectronics 16 Kbit (2Kb x8) Parallel EEPROM Original PDF
    M28C16A-20MS6T STMicroelectronics 16 Kbit (2Kb x8) Parallel EEPROM Original PDF
    M28C16A-20WBS6T STMicroelectronics 16 Kbit (2Kb x8) Parallel EEPROM Original PDF
    M28C16A-20WKA6T STMicroelectronics 16 Kbit (2Kb x8) Parallel EEPROM Original PDF
    M28C16A-20WMS6T STMicroelectronics 16 Kbit (2Kb x8) Parallel EEPROM Original PDF
    M28C16A-20WNS6T STMicroelectronics 16 Kbit (2Kb x8) Parallel EEPROM Original PDF
    M28C16A-25WBS6T STMicroelectronics 16 Kbit (2Kb x8) Parallel EEPROM Original PDF
    M28C16A-25WMS6T STMicroelectronics 16 Kbit (2Kb x8) Parallel EEPROM Original PDF
    M28C16A-30WBS6T STMicroelectronics 16 Kbit (2Kb x8) Parallel EEPROM Original PDF
    M28C16A-30WMS6T STMicroelectronics 16 Kbit (2Kb x8) Parallel EEPROM Original PDF
    M28C16A-W STMicroelectronics 16K (2K X8) PARALLEL EEPROM Original PDF

    M28C16A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    M28C16A

    Abstract: M28C17A PDIP28 PLCC32
    Text: M28C16A M28C17A 16 Kbit 2Kb x8 Parallel EEPROM DATA BRIEFING FAST ACCESS TIME: – 150ns at 5V – 250ns at 3V SINGLE SUPPLY VOLTAGE: – 5V ± 10% for M28C16A and M28C17A – 2.7V to 3.6V for M28C16-xxW LOW POWER CONSUMPTION FAST WRITE CYCLE – 32 Bytes Page Write Operation


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    PDF M28C16A M28C17A 150ns 250ns M28C16A M28C16-xxW M28C17A 250ns PDIP28 PLCC32

    M28C16A

    Abstract: M28C17A PDIP28 PLCC32
    Text: M28C16A M28C17A 16K 2K x 8 PARALLEL EEPROM FAST ACCESS TIME: 150ns SINGLE 5V ± 10% SUPPLY VOLTAGE LOW POWER CONSUMPTION FAST WRITE CYCLE – 32 Bytes Page Write Operation – Byte or Page Write Cycle: 5ms ENHANCED END OF WRITE DETECTION – Ready/Busy Open Drain Output


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    PDF M28C16A M28C17A 150ns M28C16A M28C17A PDIP28 PLCC32

    M28C16A

    Abstract: M28C17A PDIP28 PLCC32
    Text: M28C16A M28C17A 16 Kbit 2Kb x8 Parallel EEPROM FAST ACCESS TIME: – 150ns at 5V – 250ns at 3V SINGLE SUPPLY VOLTAGE: – 5V ± 10% for M28C16A and M28C17A – 2.7V to 3.6V for M28C16-xxW LOW POWER CONSUMPTION FAST WRITE CYCLE – 32 Bytes Page Write Operation


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    PDF M28C16A M28C17A 150ns 250ns M28C16A M28C16-xxW M28C17Aare M28C17A PDIP28 PLCC32

    M28C16A

    Abstract: M28C17A PDIP28 PLCC32
    Text: M28C16A M28C17A 16K 2K x 8 PARALLEL EEPROM DATA BRIEFING FAST ACCESS TIME: 150ns SINGLE 5V ± 10% SUPPLY VOLTAGE LOW POWER CONSUMPTION FAST WRITE CYCLE – 32 Bytes Page Write Operation – Byte or Page Write Cycle: 5ms ENHANCED END OF WRITE DETECTION – Ready/Busy Open Drain Output


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    PDF M28C16A M28C17A 150ns M28C16A M28C17A AI02113 M28C16A, M28C16 PDIP28 PDIP28 PLCC32

    FDIP24W

    Abstract: M27128A M2716 M27256 M2732A M27512 M2764A M27C256B M27C64A M29F040
    Text: MEMORIES and SMARTCARD PRODUCTS NON VOLATILE MEMORIES UV & OTP EPROM, 5V Operation Size References Description Package 16 Kb M2716 16 Kb x8 , 350 - 450ns, NMOS FDIP24W 32 Kb M2732A 32 Kb (x8), 200 - 450ns, NMOS FDIP24W M2764A 64 Kb (x8), 180 - 450ns, NMOS


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    PDF M2716 450ns, FDIP24W M2732A M2764A FDIP28W M27C64A FDIP24W M27128A M2716 M27256 M2732A M27512 M2764A M27C256B M27C64A M29F040

    PDIP28

    Abstract: EEPROMs M28C16A M28C16A-W M28C16B M28C16B-W M28C17A M28C17A-W M28C17B M28C17B-W
    Text: Parallel EEPROMs HIGH PERFORMANCE Parallel EEPROMs offer the highest performance and flexibility of all types of non-volatile memory. They can be randomly accessed at high speed, with access times of 90 - 150ns. They can also be randomly written at a Byte level without previous erasure. Page


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    PDF 150ns. memIP28* TSOP32, PLCC32, PDIP32 FLPARAL/0699 PDIP28 EEPROMs M28C16A M28C16A-W M28C16B M28C16B-W M28C17A M28C17A-W M28C17B M28C17B-W

    M28C16

    Abstract: M28C16A M28C17 PDIP28 PLCC32
    Text: M28C17 16K 2K x 8 PARALLEL EEPROM with SOFTWARE DATA PROTECTION NOT FOR NEW DESIGN FAST ACCESS TIME: 90ns SINGLE 5V ± 10% SUPPLY VOLTAGE LOW POWER CONSUMPTION FAST WRITE CYCLE: – 64 Bytes Page Write Operation – Byte or Page Write Cycle: 3ms Max ENHANCED END OF WRITE DETECTION:


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    PDF M28C17 M28C17 M28C16A M28C16 M28C16A PDIP28 PLCC32

    ST93C86

    Abstract: d87c257 D27128 NEC AM27020 d2732 UPD6252 ST93C76 NEC D2732 microchip CY7C63000 GAL20AS
    Text: GALEP 4 - device support for GALEP32 software version 1.14.12 ! Bauteile im DIL Gehäuse benötigen keinen Adapter ! Devices in DIL package do not require any adapter -EEPROM


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    PDF GALEP32 AT28C010 AT28C04 AT28C16 AT28C17 AT28C256 AT28C256 AT28C64 AT28C64B CAT28C16A ST93C86 d87c257 D27128 NEC AM27020 d2732 UPD6252 ST93C76 NEC D2732 microchip CY7C63000 GAL20AS

    M28C16

    Abstract: M28C16A PDIP24 PLCC32 SO24
    Text: M28C16 16K 2K x 8 PARALLEL EEPROM with SOFTWARE DATA PROTECTION NOT FOR NEW DESIGN FAST ACCESS TIME: 90ns SINGLE 5V ± 10% SUPPLY VOLTAGE LOW POWER CONSUMPTION FAST WRITE CYCLE: – 64 Bytes Page Write Operation – Byte or Page Write Cycle: 3ms Max ENHANCED END OF WRITE DETECTION:


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    PDF M28C16 M28C16 M28C16A PDIP24 PLCC32 TSOP28 M28C16A PDIP24 PLCC32 SO24

    M28C16A

    Abstract: M28LV16 PDIP24 PLCC32 SO24
    Text: M28LV16 16K 2K x 8 LOW VOLTAGE PARALLEL EEPROM with SOFTWARE DATA PROTECTION NOT FOR NEW DESIGN FAST ACCESS TIME: 200ns SINGLE LOW VOLTAGE OPERATION LOW POWER CONSUMPTION FAST WRITE CYCLE: – 64 Bytes Page Write Operation – Byte or Page Write Cycle: 3ms Max


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    PDF M28LV16 200ns M28LV16 M28C16A PLCC32 PDIP24 TSOP28 M28C16A PDIP24 PLCC32 SO24

    atmel 24c16a

    Abstract: ST93C86 EPROM AMD D87C257 atmel 93c66A ATMEL 24c64 39SF512 D27128 NEC P87LPC7648 GAL16AS
    Text: GALEP-III Device List 2000-01-31 valid for version 1.17 page 1 of 1 D:\btl117.doc EPROM AMD AM27C010 AM27C020 AM27C040 AM27C080 AM27C1024 AM27C128 AM27C2048 AM27C256 AM27C4096 AM27C512 AM27C64 ATMEL AT27C/LV/BV010 AT27C/LV/BV020 AT27C/LV/BV040 AT27C/LV/BV256


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    PDF \btl117 AM27C010 AM27C020 AM27C040 AM27C080 AM27C1024 AM27C128 AM27C2048 AM27C256 AM27C4096 atmel 24c16a ST93C86 EPROM AMD D87C257 atmel 93c66A ATMEL 24c64 39SF512 D27128 NEC P87LPC7648 GAL16AS

    footprint so44

    Abstract: 9977 IC SOCKET TSOP48 TSOP32 FOOTPRINT ST1355 52 pin plcc socket ST19GF34 PSDSoft ST19AF08 serial flash 256Mb fast erase spi
    Text: MEMORY SELECTOR Leading Edge Memories • 1999 GO Why a Broad Range? Leading Edge Memories OTP and UV EPROMs Flash Memories Serial and Parallel EEPROMs ASM and Memory Card ICs Memory Systems and NVRAMs BROAD RANGE STMicroelectronics is a world leader in non-volatile memories, manufacturing a broad


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    PDF operat911) D-90449 BRMEMSEL/0699 footprint so44 9977 IC SOCKET TSOP48 TSOP32 FOOTPRINT ST1355 52 pin plcc socket ST19GF34 PSDSoft ST19AF08 serial flash 256Mb fast erase spi

    plcc32

    Abstract: PDIP28 eeprom parallel st PDIP24 M28C64C M28C64-W M28C16A M28C16A-W M28C16B M28C16B-W
    Text: Parallel EEPROMs HIGH PERFORMANCE Parallel EEPROMs offer the highest performance and flexibility of all types of non-volatile memory. They can be randomly accessed at high speed, with access times of 90 - 120ns. They can also be randomly written at a Byte level without previous erasure. Page


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    PDF 120ns. M28C16B-W 120ns, M28C17A 150ns, M28C17A-W 250ns, M28C17B M28C17B-W plcc32 PDIP28 eeprom parallel st PDIP24 M28C64C M28C64-W M28C16A M28C16A-W M28C16B M28C16B-W

    M28C16

    Abstract: M28C16A M28C17 PDIP28 PLCC32
    Text: M28C17 16K 2K x 8 PARALLEL EEPROM with SOFTWARE DATA PROTECTION NOT FOR NEW DESIGN FAST ACCESS TIME: 90ns SINGLE 5V ± 10% SUPPLY VOLTAGE LOW POWER CONSUMPTION FAST WRITE CYCLE: – 64 Bytes Page Write Operation – Byte or Page Write Cycle: 3ms Max ENHANCED END OF WRITE DETECTION:


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    PDF M28C17 M28C17 M28C16A M28C16 M28C16A PDIP28 PLCC32

    Untitled

    Abstract: No abstract text available
    Text: M28C16A M28C17A 5 F . 16 Kbit 2Kb x8 Parallel EEPROM • FAST ACCESS TIME: - 150ns at 5V - 250ns at 3V ■ SINGLE SUPPLY VOLTAGE: - 5V ± 10% for M28C16A and M28C17A - 2.7V to 3.6V tor M28C16-xxW ■ LOW POWER CONSUMPTION ■ FAST WRITE CYCLE PDIP28 (BS)


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    PDF M28C16A M28C17A 150ns 250ns M28C17A M28C16-xxW M28C16Aand 28C17Aare

    Untitled

    Abstract: No abstract text available
    Text: M28C16A M28C17A SGS-THOMSON IIIIM J ì ILIì M W IIÈ Ì 16K 2K x8 PARALLEL EEPROM PRELIMINARY DATA • > > ■ ■ ■ ■ ■ FAST ACCESS TIME: 150ns SINGLE 5 V ± 10% SUPPLY VOLTAGE LOW POWER CONSUMPTION FAST WRITE CYCLE - 32 Bytes Page Write Operation


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    PDF M28C16A M28C17A 150ns M28C16A M28C17A TSOP28

    Untitled

    Abstract: No abstract text available
    Text: rZ T SGS-THOMSON ^ 7 # . raDwunnteinMiiiiiDei M28C16A M28C17a 16K 2K x 8 PARALLEL EEPROM • > > ■ ■ ■ ■ ■ FAST ACCESS TIME: 150ns SINGLE 5 V ± 10% SUPPLY VOLTAGE LOW POWER CONSUMPTION FAST WRITE CYCLE - 32 Bytes Page Write Operation - Byte or Page Write Cycle: 5ms


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    PDF M28C16A M28C17a 150ns M28C16A M28C17A TSOP28

    Untitled

    Abstract: No abstract text available
    Text: M 28C 16A M 28C 17A 16 Kbit 2Kb x8 Parallel EEPROM • FAST ACCESS TIME: - 150ns at 5V - 250ns at 3V ■ SINGLE SUPPLYVOLTAGE: - 5V ± 10% for M28C16A and M28C17A - 2.7V to 3.6V for M28C16-xxW ■ LOW POWER CONSUMPTION ■ FAST WRITE CYCLE I PDIP28 (BS)


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    PDF 150ns 250ns M28C16A M28C17A M28C16-xxW M28C17Aare M28C16A, M28C17A

    Untitled

    Abstract: No abstract text available
    Text: SGS-THOMSON IIIIM J ì ILIì M W M28C17 IIÈ Ì 16K 2K x 8 PARALLEL EEPROM with SOFTWARE DATA PROTECTION NOT FOR NEW DESIGN • ■ > ■ > ■ ■ ■ ■ FAST ACCESS TIME: 90ns SINGLE 5 V ± 10% SUPPLY VOLTAGE LOW POWER CONSUMPTION FAST WRITE CYCLE: - 64 Bytes Page Write Operation


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    PDF M28C17 28C17 M28C16A PLCC32

    TOOC

    Abstract: No abstract text available
    Text: SGS-THOMSON M28C17 [M D M [iL [iO T [M O (g S 16K (2K x 8 PARALLEL EEPROM with SOFTWARE DATA PROTECTION NOT FOR NEW DESIGN • ■ ■ ■ ■ ■ ■ ■ ■ FAST ACCESS TIME: 90ns SINGLE 5V ± 10% SUPPLY VOLTAGE LOW POWER CONSUMPTION FAST WRITE CYCLE:


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    PDF M28C17 M28C16A PDIP28 28C17 TOOC

    Untitled

    Abstract: No abstract text available
    Text: SGS-THOMSON IIIIM J ì ILIì M W M28C16 IIÈ Ì 16K 2K x 8 PARALLEL EEPROM with SOFTWARE DATA PROTECTION NOT FOR NEW DESIGN • FAST ACCESS TIME: 90ns ■ SINGLE 5 V ± 10% SUPPLY VOLTAGE ■ LOW POWER CONSUMPTION ■ FAST WRITE CYCLE: - 64 Bytes Page W rite Operation


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    PDF M28C16 PDIP24 PLCC32 TSOP28 28C16

    Untitled

    Abstract: No abstract text available
    Text: SGS-THOMSON IIIIM J ì ILIì M W M28LV16 IIÈ Ì 16K 2K x 8 LOW VOLTAGE PARALLEL EEPROM with SOFTWARE DATA PROTECTION NOT FOR NEW DESIGN • ■ ■ ■ ■ ■ ■ ■ ■ ■ FAST ACCESS TIME: 200ns SINGLE LOW VOLTAGE OPERATION LOW POWER CONSUMPTION FAST WRITE CYCLE:


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    PDF M28LV16 200ns PDIP24 TSOP28

    M28C16A

    Abstract: M28C17 M28C17A PDIP28 S028
    Text: w , k7 # » S G S -T H O M S O N M 28C 16A R itlD Ê lM IlilL IK Ë in S M Q tÊ S M 2 8C 1 7 A 16K 2K x8 PARALLEL EEPROM P R E L IM IN A R Y D A TA • ■ ■ ■ ■ ■ ■ ■ FAST ACCESS TIME: 150ns SINGLE 5V ± 10% SUPPLYVOLTAGE LOW POWER CONSUMPTION


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    PDF M28C16A M28C17 150ns M28C17A M28C16A, M28C17A TSOP28 TSOP28 PDIP28 S028