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    M28C16A Search Results

    M28C16A Datasheets (16)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    M28C16A STMicroelectronics 16K (2K X8) PARALLEL EEPROM Original PDF
    M28C16A-15BS6T STMicroelectronics 16 Kbit (2Kb x8) Parallel EEPROM Original PDF
    M28C16A-15WBS6T STMicroelectronics 16 Kbit (2Kb x8) Parallel EEPROM Original PDF
    M28C16A-15WKA6T STMicroelectronics 16 Kbit (2Kb x8) Parallel EEPROM Original PDF
    M28C16A-15WMS6T STMicroelectronics 16 Kbit (2Kb x8) Parallel EEPROM Original PDF
    M28C16A-20BS6T STMicroelectronics 16 Kbit (2Kb x8) Parallel EEPROM Original PDF
    M28C16A-20MS6T STMicroelectronics 16 Kbit (2Kb x8) Parallel EEPROM Original PDF
    M28C16A-20WBS6T STMicroelectronics 16 Kbit (2Kb x8) Parallel EEPROM Original PDF
    M28C16A-20WKA6T STMicroelectronics 16 Kbit (2Kb x8) Parallel EEPROM Original PDF
    M28C16A-20WMS6T STMicroelectronics 16 Kbit (2Kb x8) Parallel EEPROM Original PDF
    M28C16A-20WNS6T STMicroelectronics 16 Kbit (2Kb x8) Parallel EEPROM Original PDF
    M28C16A-25WBS6T STMicroelectronics 16 Kbit (2Kb x8) Parallel EEPROM Original PDF
    M28C16A-25WMS6T STMicroelectronics 16 Kbit (2Kb x8) Parallel EEPROM Original PDF
    M28C16A-30WBS6T STMicroelectronics 16 Kbit (2Kb x8) Parallel EEPROM Original PDF
    M28C16A-30WMS6T STMicroelectronics 16 Kbit (2Kb x8) Parallel EEPROM Original PDF
    M28C16A-W STMicroelectronics 16K (2K X8) PARALLEL EEPROM Original PDF

    M28C16A Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    M28C16A

    Abstract: M28C17A PDIP28 PLCC32
    Text: M28C16A M28C17A 16 Kbit 2Kb x8 Parallel EEPROM DATA BRIEFING FAST ACCESS TIME: – 150ns at 5V – 250ns at 3V SINGLE SUPPLY VOLTAGE: – 5V ± 10% for M28C16A and M28C17A – 2.7V to 3.6V for M28C16-xxW LOW POWER CONSUMPTION FAST WRITE CYCLE – 32 Bytes Page Write Operation


    Original     		M28C16A M28C17A 150ns 250ns M28C16A M28C16-xxW M28C17A 250ns PDIP28 PLCC32 PDF

    M28C16A

    Abstract: M28C17A PDIP28 PLCC32
    Text: M28C16A M28C17A 16K 2K x 8 PARALLEL EEPROM FAST ACCESS TIME: 150ns SINGLE 5V ± 10% SUPPLY VOLTAGE LOW POWER CONSUMPTION FAST WRITE CYCLE – 32 Bytes Page Write Operation – Byte or Page Write Cycle: 5ms ENHANCED END OF WRITE DETECTION – Ready/Busy Open Drain Output


    Original     		M28C16A M28C17A 150ns M28C16A M28C17A PDIP28 PLCC32 PDF

    M28C16A

    Abstract: M28C17A PDIP28 PLCC32
    Text: M28C16A M28C17A 16 Kbit 2Kb x8 Parallel EEPROM FAST ACCESS TIME: – 150ns at 5V – 250ns at 3V SINGLE SUPPLY VOLTAGE: – 5V ± 10% for M28C16A and M28C17A – 2.7V to 3.6V for M28C16-xxW LOW POWER CONSUMPTION FAST WRITE CYCLE – 32 Bytes Page Write Operation


    Original     		M28C16A M28C17A 150ns 250ns M28C16A M28C16-xxW M28C17Aare M28C17A PDIP28 PLCC32 PDF

    M28C16A

    Abstract: M28C17A PDIP28 PLCC32
    Text: M28C16A M28C17A 16K 2K x 8 PARALLEL EEPROM DATA BRIEFING FAST ACCESS TIME: 150ns SINGLE 5V ± 10% SUPPLY VOLTAGE LOW POWER CONSUMPTION FAST WRITE CYCLE – 32 Bytes Page Write Operation – Byte or Page Write Cycle: 5ms ENHANCED END OF WRITE DETECTION – Ready/Busy Open Drain Output


    Original     		M28C16A M28C17A 150ns M28C16A M28C17A AI02113 M28C16A, M28C16 PDIP28 PDIP28 PLCC32 PDF

    FDIP24W

    Abstract: M27128A M2716 M27256 M2732A M27512 M2764A M27C256B M27C64A M29F040
    Text: MEMORIES and SMARTCARD PRODUCTS NON VOLATILE MEMORIES UV & OTP EPROM, 5V Operation Size References Description Package 16 Kb M2716 16 Kb x8 , 350 - 450ns, NMOS FDIP24W 32 Kb M2732A 32 Kb (x8), 200 - 450ns, NMOS FDIP24W M2764A 64 Kb (x8), 180 - 450ns, NMOS


    Original     		M2716 450ns, FDIP24W M2732A M2764A FDIP28W M27C64A FDIP24W M27128A M2716 M27256 M2732A M27512 M2764A M27C256B M27C64A M29F040 PDF

    PDIP28

    Abstract: EEPROMs M28C16A M28C16A-W M28C16B M28C16B-W M28C17A M28C17A-W M28C17B M28C17B-W
    Text: Parallel EEPROMs HIGH PERFORMANCE Parallel EEPROMs offer the highest performance and flexibility of all types of non-volatile memory. They can be randomly accessed at high speed, with access times of 90 - 150ns. They can also be randomly written at a Byte level without previous erasure. Page


    Original     		150ns. memIP28* TSOP32, PLCC32, PDIP32 FLPARAL/0699 PDIP28 EEPROMs M28C16A M28C16A-W M28C16B M28C16B-W M28C17A M28C17A-W M28C17B M28C17B-W PDF

    M28C16

    Abstract: M28C16A M28C17 PDIP28 PLCC32
    Text: M28C17 16K 2K x 8 PARALLEL EEPROM with SOFTWARE DATA PROTECTION NOT FOR NEW DESIGN FAST ACCESS TIME: 90ns SINGLE 5V ± 10% SUPPLY VOLTAGE LOW POWER CONSUMPTION FAST WRITE CYCLE: – 64 Bytes Page Write Operation – Byte or Page Write Cycle: 3ms Max ENHANCED END OF WRITE DETECTION:


    Original     		M28C17 M28C17 M28C16A M28C16 M28C16A PDIP28 PLCC32 PDF

    ST93C86

    Abstract: d87c257 D27128 NEC AM27020 d2732 UPD6252 ST93C76 NEC D2732 microchip CY7C63000 GAL20AS
    Text: GALEP 4 - device support for GALEP32 software version 1.14.12 ! Bauteile im DIL Gehäuse benötigen keinen Adapter ! Devices in DIL package do not require any adapter -EEPROM


    Original     		GALEP32 AT28C010 AT28C04 AT28C16 AT28C17 AT28C256 AT28C256 AT28C64 AT28C64B CAT28C16A ST93C86 d87c257 D27128 NEC AM27020 d2732 UPD6252 ST93C76 NEC D2732 microchip CY7C63000 GAL20AS PDF

    M28C16

    Abstract: M28C16A PDIP24 PLCC32 SO24
    Text: M28C16 16K 2K x 8 PARALLEL EEPROM with SOFTWARE DATA PROTECTION NOT FOR NEW DESIGN FAST ACCESS TIME: 90ns SINGLE 5V ± 10% SUPPLY VOLTAGE LOW POWER CONSUMPTION FAST WRITE CYCLE: – 64 Bytes Page Write Operation – Byte or Page Write Cycle: 3ms Max ENHANCED END OF WRITE DETECTION:


    Original     		M28C16 M28C16 M28C16A PDIP24 PLCC32 TSOP28 M28C16A PDIP24 PLCC32 SO24 PDF

    M28C16A

    Abstract: M28LV16 PDIP24 PLCC32 SO24
    Text: M28LV16 16K 2K x 8 LOW VOLTAGE PARALLEL EEPROM with SOFTWARE DATA PROTECTION NOT FOR NEW DESIGN FAST ACCESS TIME: 200ns SINGLE LOW VOLTAGE OPERATION LOW POWER CONSUMPTION FAST WRITE CYCLE: – 64 Bytes Page Write Operation – Byte or Page Write Cycle: 3ms Max


    Original     		M28LV16 200ns M28LV16 M28C16A PLCC32 PDIP24 TSOP28 M28C16A PDIP24 PLCC32 SO24 PDF

    atmel 24c16a

    Abstract: ST93C86 EPROM AMD D87C257 atmel 93c66A ATMEL 24c64 39SF512 D27128 NEC P87LPC7648 GAL16AS
    Text: GALEP-III Device List 2000-01-31 valid for version 1.17 page 1 of 1 D:\btl117.doc EPROM AMD AM27C010 AM27C020 AM27C040 AM27C080 AM27C1024 AM27C128 AM27C2048 AM27C256 AM27C4096 AM27C512 AM27C64 ATMEL AT27C/LV/BV010 AT27C/LV/BV020 AT27C/LV/BV040 AT27C/LV/BV256


    Original     		\btl117 AM27C010 AM27C020 AM27C040 AM27C080 AM27C1024 AM27C128 AM27C2048 AM27C256 AM27C4096 atmel 24c16a ST93C86 EPROM AMD D87C257 atmel 93c66A ATMEL 24c64 39SF512 D27128 NEC P87LPC7648 GAL16AS PDF

    footprint so44

    Abstract: 9977 IC SOCKET TSOP48 TSOP32 FOOTPRINT ST1355 52 pin plcc socket ST19GF34 PSDSoft ST19AF08 serial flash 256Mb fast erase spi
    Text: MEMORY SELECTOR Leading Edge Memories • 1999 GO Why a Broad Range? Leading Edge Memories OTP and UV EPROMs Flash Memories Serial and Parallel EEPROMs ASM and Memory Card ICs Memory Systems and NVRAMs BROAD RANGE STMicroelectronics is a world leader in non-volatile memories, manufacturing a broad


    Original     		operat911) D-90449 BRMEMSEL/0699 footprint so44 9977 IC SOCKET TSOP48 TSOP32 FOOTPRINT ST1355 52 pin plcc socket ST19GF34 PSDSoft ST19AF08 serial flash 256Mb fast erase spi PDF

    plcc32

    Abstract: PDIP28 eeprom parallel st PDIP24 M28C64C M28C64-W M28C16A M28C16A-W M28C16B M28C16B-W
    Text: Parallel EEPROMs HIGH PERFORMANCE Parallel EEPROMs offer the highest performance and flexibility of all types of non-volatile memory. They can be randomly accessed at high speed, with access times of 90 - 120ns. They can also be randomly written at a Byte level without previous erasure. Page


    Original     		120ns. M28C16B-W 120ns, M28C17A 150ns, M28C17A-W 250ns, M28C17B M28C17B-W plcc32 PDIP28 eeprom parallel st PDIP24 M28C64C M28C64-W M28C16A M28C16A-W M28C16B M28C16B-W PDF

    M28C16

    Abstract: M28C16A M28C17 PDIP28 PLCC32
    Text: M28C17 16K 2K x 8 PARALLEL EEPROM with SOFTWARE DATA PROTECTION NOT FOR NEW DESIGN FAST ACCESS TIME: 90ns SINGLE 5V ± 10% SUPPLY VOLTAGE LOW POWER CONSUMPTION FAST WRITE CYCLE: – 64 Bytes Page Write Operation – Byte or Page Write Cycle: 3ms Max ENHANCED END OF WRITE DETECTION:


    Original     		M28C17 M28C17 M28C16A M28C16 M28C16A PDIP28 PLCC32 PDF

    Untitled

    Abstract: No abstract text available
    Text: M28C16A M28C17A 5 F . 16 Kbit 2Kb x8 Parallel EEPROM • FAST ACCESS TIME: - 150ns at 5V - 250ns at 3V ■ SINGLE SUPPLY VOLTAGE: - 5V ± 10% for M28C16A and M28C17A - 2.7V to 3.6V tor M28C16-xxW ■ LOW POWER CONSUMPTION ■ FAST WRITE CYCLE PDIP28 (BS)


    OCR Scan     		M28C16A M28C17A 150ns 250ns M28C17A M28C16-xxW M28C16Aand 28C17Aare PDF

    Untitled

    Abstract: No abstract text available
    Text: M28C16A M28C17A SGS-THOMSON IIIIM J ì ILIì M W IIÈ Ì 16K 2K x8 PARALLEL EEPROM PRELIMINARY DATA • > > ■ ■ ■ ■ ■ FAST ACCESS TIME: 150ns SINGLE 5 V ± 10% SUPPLY VOLTAGE LOW POWER CONSUMPTION FAST WRITE CYCLE - 32 Bytes Page Write Operation


    OCR Scan     		M28C16A M28C17A 150ns M28C16A M28C17A TSOP28 PDF

    Untitled

    Abstract: No abstract text available
    Text: rZ T SGS-THOMSON ^ 7 # . raDwunnteinMiiiiiDei M28C16A M28C17a 16K 2K x 8 PARALLEL EEPROM • > > ■ ■ ■ ■ ■ FAST ACCESS TIME: 150ns SINGLE 5 V ± 10% SUPPLY VOLTAGE LOW POWER CONSUMPTION FAST WRITE CYCLE - 32 Bytes Page Write Operation - Byte or Page Write Cycle: 5ms


    OCR Scan     		M28C16A M28C17a 150ns M28C16A M28C17A TSOP28 PDF

    Untitled

    Abstract: No abstract text available
    Text: M 28C 16A M 28C 17A 16 Kbit 2Kb x8 Parallel EEPROM • FAST ACCESS TIME: - 150ns at 5V - 250ns at 3V ■ SINGLE SUPPLYVOLTAGE: - 5V ± 10% for M28C16A and M28C17A - 2.7V to 3.6V for M28C16-xxW ■ LOW POWER CONSUMPTION ■ FAST WRITE CYCLE I PDIP28 (BS)


    OCR Scan     		150ns 250ns M28C16A M28C17A M28C16-xxW M28C17Aare M28C16A, M28C17A PDF

    Untitled

    Abstract: No abstract text available
    Text: SGS-THOMSON IIIIM J ì ILIì M W M28C17 IIÈ Ì 16K 2K x 8 PARALLEL EEPROM with SOFTWARE DATA PROTECTION NOT FOR NEW DESIGN • ■ > ■ > ■ ■ ■ ■ FAST ACCESS TIME: 90ns SINGLE 5 V ± 10% SUPPLY VOLTAGE LOW POWER CONSUMPTION FAST WRITE CYCLE: - 64 Bytes Page Write Operation


    OCR Scan     		M28C17 28C17 M28C16A PLCC32 PDF

    TOOC

    Abstract: No abstract text available
    Text: SGS-THOMSON M28C17 [M D M [iL [iO T [M O (g S 16K (2K x 8 PARALLEL EEPROM with SOFTWARE DATA PROTECTION NOT FOR NEW DESIGN • ■ ■ ■ ■ ■ ■ ■ ■ FAST ACCESS TIME: 90ns SINGLE 5V ± 10% SUPPLY VOLTAGE LOW POWER CONSUMPTION FAST WRITE CYCLE:


    OCR Scan     		M28C17 M28C16A PDIP28 28C17 TOOC PDF

    Untitled

    Abstract: No abstract text available
    Text: SGS-THOMSON IIIIM J ì ILIì M W M28C16 IIÈ Ì 16K 2K x 8 PARALLEL EEPROM with SOFTWARE DATA PROTECTION NOT FOR NEW DESIGN • FAST ACCESS TIME: 90ns ■ SINGLE 5 V ± 10% SUPPLY VOLTAGE ■ LOW POWER CONSUMPTION ■ FAST WRITE CYCLE: - 64 Bytes Page W rite Operation


    OCR Scan     		M28C16 PDIP24 PLCC32 TSOP28 28C16 PDF

    Untitled

    Abstract: No abstract text available
    Text: SGS-THOMSON IIIIM J ì ILIì M W M28LV16 IIÈ Ì 16K 2K x 8 LOW VOLTAGE PARALLEL EEPROM with SOFTWARE DATA PROTECTION NOT FOR NEW DESIGN • ■ ■ ■ ■ ■ ■ ■ ■ ■ FAST ACCESS TIME: 200ns SINGLE LOW VOLTAGE OPERATION LOW POWER CONSUMPTION FAST WRITE CYCLE:


    OCR Scan     		M28LV16 200ns PDIP24 TSOP28 PDF

    M28C16A

    Abstract: M28C17 M28C17A PDIP28 S028
    Text: w , k7 # » S G S -T H O M S O N M 28C 16A R itlD Ê lM IlilL IK Ë in S M Q tÊ S M 2 8C 1 7 A 16K 2K x8 PARALLEL EEPROM P R E L IM IN A R Y D A TA • ■ ■ ■ ■ ■ ■ ■ FAST ACCESS TIME: 150ns SINGLE 5V ± 10% SUPPLYVOLTAGE LOW POWER CONSUMPTION


    OCR Scan     		M28C16A M28C17 150ns M28C17A M28C16A, M28C17A TSOP28 TSOP28 PDIP28 S028 PDF