eeprom Cross Reference
Abstract: S524A60X81-SC S524L50X51 IS24C16-2G equivalent IS24C02-3ZI IS25C64-2Z IS93C46 m93c46 st diode cross reference S524A40X10-RC
Text: Serial EEPROMs www.st.com/eeprom SAMSUNG ISSI Cross Reference Guide STM i c r o e l e c t r o n i c s More Intelligent Solutions to ST How to use the Cross Reference Guide This Cross Reference Guide is intended to help you choose the ST Serial EEPROM products
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CREESAMS/0702
eeprom Cross Reference
S524A60X81-SC
S524L50X51
IS24C16-2G equivalent
IS24C02-3ZI
IS25C64-2Z
IS93C46
m93c46
st diode cross reference
S524A40X10-RC
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Untitled
Abstract: No abstract text available
Text: M95080-A125 M95080-A145 Automotive 8-Kbit serial SPI bus EEPROMs with high-speed clock Datasheet - production data Features • Compatible with the Serial Peripheral Interface SPI bus SO8 (MN) 150 mil width TSSOP8 (DW) 169 mil width WFDFPN8 (MF) 2 x 3 mm
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M95080-A125
M95080-A145
DocID024205
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ST10F275
Abstract: ST10F273
Text: AN2061 APPLICATION NOTE EEPROM Emulation with ST10F2xx Description External EEPROMs are often used in automotive applications to store adaptative/evolutive data. On the other hand, the Microcontroller used in those systems, are more and more based on embedded-Flash.
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AN2061
ST10F2xx
ST10F2xx
DocID10945
ST10F275
ST10F273
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STK25C48
Abstract: No abstract text available
Text: STK25C48 2K x 8 AutoStore nvSRAM QuantumTrap™ CMOS Nonvolatile Static RAM Obsolete - Not Recommend for new Designs FEATURES DESCRIPTION • Nonvolatile Storage without Battery Problems • Directly Replaces 2K x 8 Static RAM, BatteryBacked RAM or EEPROMs
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STK25C48
200ns
100-Year
24-Pin
STK25C48
ML0005
Sn/15
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LV010
Abstract: LV020 ATMEL EEPROM 256 AT17C LV002
Text: Programming Atmel’s EEPROMs: AT17C/LV020 A vs. AT17C/LV002(A) Features • Major Differences in Programming the AT17C/LV020(A) and the AT17C/LV002(A) EEPROMs • Internal Structure of the AT17C/LV020(A) and the AT17C/LV002(A) EEPROMs Introduction This application note provides Atmel’s customers with a description of the major
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AT17C/LV020
AT17C/LV002
LV010
LV020
ATMEL EEPROM 256
AT17C
LV002
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BR24L02FJ-W
Abstract: BR24L02FVM-W BR24L02FV-W BR24L02F-W BR24L02-W BR24L04 BR24L08 BR24L16
Text: BR24L02-W / BR24L02F-W / BR24L02FJ-W / BR24L02FV-W / BR24L02FVM-W Memory ICs 256x8 bit electrically erasable PROM BR24L02-W / BR24L02F-W / BR24L02FJ-W BR24L02FV-W / BR24L02FVM-W The BR24L02-W series is 2-wire I2C BUS type serial EEPROMs which are electrically programmable.
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BR24L02-W
BR24L02F-W
BR24L02FJ-W
BR24L02FV-W
BR24L02FVM-W
BR24L02FJ-W
BR24L02FVM-W
BR24L04
BR24L08
BR24L16
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AN619
Abstract: microchip eeprom interface AN536 AN560 PIC16C54 PIC16C5X AN-619
Text: AN619 Interfacing the 93XX76 and 93XX86 to a PIC16C5X INTRODUCTION Microchip’s newest offerings in the 3-wire Serial EEPROM family are the 93XX76 and 93XX86 devices. These are 8k-bit and 16k-bit versions of our 93 series Serial EEPROMs with a couple of differences from the
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AN619
93XX76
93XX86
PIC16C5X
16k-bit
93XX46,
93XX56
93XX66
AN619
microchip eeprom interface
AN536
AN560
PIC16C54
PIC16C5X
AN-619
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toshiba eSD memory
Abstract: No abstract text available
Text: Memories and Storage Devices Serial EEPROM Series z 56 55 Serial EEPROM Series Overview The TC9WM series is a family of low-capacity serial EEPROMs housed in standard, ultra-small leaded packages – US8, or SM8 which is pin-compatible with the industry-standard MSOP8 package. Thus,
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200B
Abstract: AN602 DK-2750 RG41
Text: AN602 How to get 10 Million Cycles out of your Microchip Serial EEPROM Author: 10 MILLION CYCLE GUARENTEE David Wilkie Reliability Engineer INTRODUCTION Microchip Technology Incorporated recently became the first manufacturer of Serial EEPROMs to rate the
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AN602
200B
AN602
DK-2750
RG41
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SO8 Wide Package
Abstract: 1205 SO8 4463 SO8 WIDE TSSOP8 texas M24128 M24256 M24256A M24C01 M24C02
Text: Serial EEPROMs I2C, SPI AND MICROWIRE BUSES ST EEPROM products are the standard of reference in the industry, built with sub-micron technology and offering leading performances. The ranges include serial access EEPROMs with the 400 KHz, I2C low cost, 2-wire bus and densities up to 256 Kbit; fast 1 MHz
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286-CJ103
SO8 Wide Package
1205 SO8
4463
SO8 WIDE
TSSOP8 texas
M24128
M24256
M24256A
M24C01
M24C02
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f 93c66
Abstract: 93C46 93C66 93C57 93c66 6 93C86 93C46 DATASHEET 93C56 TEW JAPAN
Text: AND8429/D Former Catalyst Document Number MD−6000 Using ON Semiconductor's Serial EEPROMs in Shared Input/Output Configuration http://onsemi.com Prepared by: ON Semiconductor APPLICATION NOTE ON Semiconductor’s family of serial E2PROMs utilizes 4 signals for the communication interface; Chip Select CS
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AND8429/D
MD-6000
f 93c66
93C46
93C66
93C57
93c66 6
93C86
93C46 DATASHEET
93C56
TEW JAPAN
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TRANSISTOR A117
Abstract: failure rate TDDB SST superflash
Text: Endurance Testing of EEPROMs Technical Paper November 2001 Endurance Testing of EEPROMs FAILURE MECHANISMS Endurance is the cumulative number of Erase/Program cycles before the device fails a data sheet parameter. Reprogrammable nonvolatile memories, such as flash
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S72022-00-000
TRANSISTOR A117
failure rate TDDB
SST superflash
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BR24L04
Abstract: BR24L08 BR24L08FJ-W BR24L08FVM-W BR24L08FV-W BR24L08F-W BR24L08-W BR24L16
Text: BR24L08-W / BR24L08F-W / BR24L08FJ-W BR24L08FV-W / BR24L08FVM-W Memory ICs 1024x8 bit electrically erasable PROM BR24L08-W / BR24L08F-W / BR24L08FJ-W / BR24L08FV-W / BR24L08FVM-W The BR24L08-W series is 2-wire I2C BUS type serial EEPROMs which are electrically programmable.
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BR24L08-W
BR24L08F-W
BR24L08FJ-W
BR24L08FV-W
BR24L08FVM-W
BR24L08FJ-W
BR24L04
BR24L08
BR24L08FVM-W
BR24L16
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M95M01-A125
Abstract: No abstract text available
Text: M95M01-A125 M95M01-A145 Automotive 1 Mbit serial SPI bus EEPROMs with high-speed clock Datasheet − preliminary data Features • Compatible with the Serial Peripheral Interface SPI bus ■ Memory array – 1 Mbit (128 Kbytes) of EEPROM – Page size: 256 bytes
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M95M01-A125
M95M01-A145
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Untitled
Abstract: No abstract text available
Text: EEPROM Reliability The reliability of AMD's NS-18 process used in the fabrication of 64K EEPROMs is described in this report. The reliability monitors used at AMD were designed to predict the future operating life results by accelerat ing failure rates. The monitors include data from endur
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NS-18
Am2864AE/BE
Am2864B
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Untitled
Abstract: No abstract text available
Text: M ic r o c h ip 2 4 C 8 B / 1 6 B 8K/16K 5V E-Temperature Serial EEPROMs FEATURES DESCRIPTION • Single supply with operation from 4.5-5.5V • Low power CMOS technology — 1 mA active current typical — 10 nA standby current typical at 5.5V • Organized as 4 or 8 blocks of 256 bytes 4 x 256 x 8
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8K/16K
DS21081A-page
blG3201
24C08B/16B
24CXXB
24C16B
24C16BT
24C08B
24C08BT
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Untitled
Abstract: No abstract text available
Text: 2 4 C 0 1 A / 0 2 A /0 4 A 1K/2K/4K 5V CMOS Serial EEPROMs FEATURES DESCRIPTION • • • • • • • • • • • The Microchip Technology Inc. 24C01A/02A/04A is a 1K/2K/4K bit Electrically Erasable PROM. The device is organized as shown, with a standard two wire serial
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24C01A/02A/04A
Uptofour24C01
/02A/04As
24C01A/02A
14-Lead,
24C04A
DS11183A-page
blD3201
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Untitled
Abstract: No abstract text available
Text: SEM ICONDUCTOR TM NM24C04U/NM24C05U 4K-Bit Serial EEPROM 2-Wire Bus Interface General Description Functions The NM 24C04U/05U devices are 4K 4,096 bit serial interface CM OS EEPROMs (Electrically Erasable Program mable ReadO nly M emory). These devices fully conform to the Standard l2C
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NM24C04U/NM24C05U
24C04U/05U
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Untitled
Abstract: No abstract text available
Text: S E M IC O N D U C T O R TM NM24C02U/NM24C03U 2K-Bit Serial EEPROM 2-Wire Bus Interface General Description Functions The NM 24C02U/NM 24C03U are 2K 2,048 bit serial interface CM OS EEPROMs (Electrically Erasable Program mable ReadO nly M emory). These devices fully conform to the Standard l2C
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NM24C02U/NM24C03U
24C02U/NM
24C03U
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Untitled
Abstract: No abstract text available
Text: DS1730Y/YLPM DALLAS SEMICONDUCTOR DS1730Y/YLPM 3 Volt Partitionable 256K NV SRAM FEATURES PIN ASSIGNMENT • Data retention in the absence of V cc • Data is automatically protected during power loss • Directly replaces 32K x 8 volatile static RAMs or EEPROMs
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DS1730Y/YLPM
28-pin
DS1730Y)
2bl4130
DD10771
DS1730YLPM
34-PIN
68-pin
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Untitled
Abstract: No abstract text available
Text: ^ÊÊÊk>m M t o ic r o c h ip 24LC01SC/02SC 1K/2K 2.5V I2C Serial EEPROMs for Smart Cards FEATURES DIE LAYOUT • ISO Standard 7816 pad locations • Low power CMOS technology - 1 mA active current typical - 10 |iA standby current typical at 5.5V - 5 |iA standby current typical at 3.0V
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24LC01SC/02SC
100kHz
400kHz
24LC01SC/02SC
24LC02SC
24LC01SC
blD32Dl
DS21171A-page
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Untitled
Abstract: No abstract text available
Text: M 2 4 C 0 8 B/ 1 6 B ic r o c h ip 8K/16K 5.0V E-Temperature Serial EEPROMs PACKAGE TYPE FEATURES • Single supply with operation from 4.5-5.5V DIP • Low power CMOS technology A0 C 1 8 H Vcc Al C 2 7 □ WP A2 C 3 6 □ SCL [I 5 □ SDA - 1 mA active current typical
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8K/16K
24C08B/16B
DS21081C-page
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Untitled
Abstract: No abstract text available
Text: 24AA04/08 M ic r o c h ip 4K/8K 1.8V I2C Serial EEPROMs FEATURES PAC KAG E T Y P E S DIP • Single supply with operation down to 1.8V • Low power CMOS technology - 1 mA active current typical - 10 jA standby current typical at 5.5V - 3 nA standby current typical at 1.8V
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24AA04/08
14-lead
24AA04
24AA04T
24AA08
24AA08T
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Untitled
Abstract: No abstract text available
Text: 24A M ic r o c h ip 1KI2K A 1.8V CMOS Serial EEPROMs 0 1 /0 2 FEATURES DESCRIPTION • Single supply with operation down to 1,8V • Low power CMOS technology — 1m A active current typical — 10 iA standby current typical at 5.5V — 3 nA standby current typical at 1.8V
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24AA01
24AA01T
24AA02
24AA02T
DS21052C-page
bl03501
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