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    M25 DIODE Search Results

    M25 DIODE Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation
    CUZ16V Toshiba Electronic Devices & Storage Corporation Zener Diode, 16 V, USC Visit Toshiba Electronic Devices & Storage Corporation

    M25 DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BRAUN R4

    Abstract: en 175301-803 M12-A RD30 DIN 43650 bauform c DIN EN 175301-803 Diode Z20
    Text: TI Ü Magnetventilsteckverbinder Bauform B Solenoid valve connectors size B M5 RD30 RD24 M25 Bajonett M23 M16 IP67 M16 IP40 PP IP67 Bajonett SI IP67 M9 IP67 M9 IP40 PP IP67 MPP IP67 Bajonett SI IP67 SI IP40 binder Gerätesteckdosen Magnetventilsteckdosen Verbindungsleitungen


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    PDF IP65/IP67 M12-US M12-D M12-B M12-A BRAUN R4 en 175301-803 M12-A RD30 DIN 43650 bauform c DIN EN 175301-803 Diode Z20

    Untitled

    Abstract: No abstract text available
    Text: 5168 Relay.qk 12/28/03 12:52 Page 7 CARLO GAVAZZI A u t o m a t i o n C o m p o n e n t s Relays 5168 Relay.qk 12/28/03 12:51 Page 2 Monostable or Bistable Miniature Power Relays • Miniature size 15 mm high • PCB mounting Type M15 Type M25 • Monostable or bistable versions


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    PDF

    ceag ghg 122 3121

    Abstract: ceag ghg 534 ceag ghg 534 2506 crouse-hinds GHG 960 663 B0708 CEAG PTB 00 ATEX 3108 ceag ghg 412 ceag ghg 543 ceag GHG 543 2306 Ex-92
    Text: C A T A L O G U E E X P L O S I O N P R O T E C T E D 3 1 0 P R O D U C T S The CEAG Sicherheitstechnik GmbH factory in Eberbach, Germany The CEAG Nortem SA Barcelona, Spain The factory in Sheerness, UK CEAG SICHERHEITSTECHNIK GMBH Essentials, Innovations and a few words about your money


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    PDF ambitious531 03/SL D-69412 ceag ghg 122 3121 ceag ghg 534 ceag ghg 534 2506 crouse-hinds GHG 960 663 B0708 CEAG PTB 00 ATEX 3108 ceag ghg 412 ceag ghg 543 ceag GHG 543 2306 Ex-92

    1N21B

    Abstract: 1n23 cv102
    Text: ueti, Line, ^s-mi-donductoi TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Microwave Diodes b Notn L C — Conversion Lots MR -NoiK Ratio P R F - M*x. RF Paww V B - Breakdown Voltage - Overall NoiM Fictor


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    PDF 500/1000mA 1N21C 1N23A 1N21B 1N21B 1n23 cv102

    VG95343t

    Abstract: raychem cable jointing kit lt 427 BAS 99 ATEX 1101 3294f raychem medium voltage cable termination kit 15kv outdoor type RESISTOR COLOUR CODING T18R-HS 33 kV raychem indoor plug in type heat shrink food and beverage stock sheet
    Text: Technical portal and online community for Design Engineers - www.element-14.com 1977 Cable Accessories Braided Sleeving . . . . . . . . . . . . . . . . . . . . . . . . . . Cable Clips & Cord. . . . . . . . . . . . . . . . . . . . . . . . . Cable Glands . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


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    PDF element-14 120mm 520mm 140kg VG95343t raychem cable jointing kit lt 427 BAS 99 ATEX 1101 3294f raychem medium voltage cable termination kit 15kv outdoor type RESISTOR COLOUR CODING T18R-HS 33 kV raychem indoor plug in type heat shrink food and beverage stock sheet

    Untitled

    Abstract: No abstract text available
    Text: LatticeSC/M Family Data Sheet DS1004 Version 01.6, August 2007 LatticeSC/M Family Data Sheet Introduction March 2007 Preliminary Data Sheet DS1004 Features • High Performance FPGA Fabric • 15K to 115K four input Look-up Tables LUT4s • 132 to 942 I/Os


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    PDF DS1004 DS1004 700MHz 600Mbps 125Gbps) 105mW

    2-bit comparator

    Abstract: LFSC3GA15E-5F900I PR77A PR55D pr94a diode transistor pt36c pt36C PB110C pb127d PB138
    Text: LatticeSC/M Family Data Sheet DS1004 Version 01.8, November 2007 LatticeSC/M Family Data Sheet Introduction March 2007 Preliminary Data Sheet DS1004 Features • High Performance FPGA Fabric • 15K to 115K four input Look-up Tables LUT4s • 132 to 942 I/Os


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    PDF DS1004 DS1004 700MHz 600Mbps 125Gbps) 105mW 2-bit comparator LFSC3GA15E-5F900I PR77A PR55D pr94a diode transistor pt36c pt36C PB110C pb127d PB138

    Untitled

    Abstract: No abstract text available
    Text: LatticeSC/M Family Data Sheet DS1004 Version 02.1, June 2008 LatticeSC/M Family Data Sheet Introduction January 2008 Data Sheet DS1004 Features • High Performance FPGA Fabric • 15K to 115K four input Look-up Tables LUT4s • 139 to 942 I/Os • 700MHz global clock; 1GHz edge clocks


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    PDF DS1004 DS1004 700MHz 600Mbps 125Gbps) 105mW

    Untitled

    Abstract: No abstract text available
    Text: LatticeSC/M Family Data Sheet DS1004 Version 02.0, March 2008 LatticeSC/M Family Data Sheet Introduction January 2008 Preliminary Data Sheet DS1004 Features • High Performance FPGA Fabric • 15K to 115K four input Look-up Tables LUT4s • 139 to 942 I/Os


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    PDF DS1004 DS1004 700MHz 600Mbps 125Gbps) 105mW

    PB110C

    Abstract: PB124A pt36C SCM15 BA5 904 AF P PL80B PR55D pr94a diode transistor pt36c transistor pt42c
    Text: LatticeSC/M Family Data Sheet DS1004 Version 02.3, January 2010 LatticeSC/M Family Data Sheet Introduction January 2010 Data Sheet DS1004 Features – 1 to 7.8 Mbits memory – True Dual Port/Pseudo Dual Port/Single Port – Dedicated FIFO logic for all block RAM


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    PDF DS1004 DS1004 500MHz 700MHz 600Mbps 125Gbps) 1A-10 1152-ball 1704-ball PB110C PB124A pt36C SCM15 BA5 904 AF P PL80B PR55D pr94a diode transistor pt36c transistor pt42c

    PB97A

    Abstract: PR45C pr77a
    Text: LatticeSC/M Family Data Sheet DS1004 Version 02.4, December 2011 LatticeSC/M Family Data Sheet Introduction January 2010 Data Sheet DS1004 Features  High Performance FPGA Fabric • 15K to 115K four input Look-up Tables LUT4s • 139 to 942 I/Os • 700MHz global clock; 1GHz edge clocks


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    PDF DS1004 DS1004 700MHz 600Mbps 125Gbps) 105mW 1A-10 1152-ball 1704-ball PB97A PR45C pr77a

    PB80D

    Abstract: PR87A PR98A PR96A PB110C pr94a diode pt36C pr77a transistor pt36c transistor pt42c
    Text: LatticeSC/M Family Data Sheet DS1004 Version 02.3, January 2010 LatticeSC/M Family Data Sheet Introduction January 2010 Data Sheet DS1004 Features – 1 to 7.8 Mbits memory – True Dual Port/Pseudo Dual Port/Single Port – Dedicated FIFO logic for all block RAM


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    PDF DS1004 DS1004 500MHz 700MHz 600Mbps 125Gbps) 1A-10 1152-ball 1704-ball PB80D PR87A PR98A PR96A PB110C pr94a diode pt36C pr77a transistor pt36c transistor pt42c

    pb127d

    Abstract: No abstract text available
    Text: LatticeSC/M Family Data Sheet DS1004 Version 02.2, December 2008 LatticeSC/M Family Data Sheet Introduction January 2008 Data Sheet DS1004 Features • High Performance FPGA Fabric • 15K to 115K four input Look-up Tables LUT4s • 139 to 942 I/Os • 700MHz global clock; 1GHz edge clocks


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    PDF DS1004 DS1004 700MHz 600Mbps 125Gbps) 105mW pb127d

    Untitled

    Abstract: No abstract text available
    Text: LatticeSC/M Family Data Sheet DS1004 Version 01.9, January 2008 LatticeSC/M Family Data Sheet Introduction January 2008 Preliminary Data Sheet DS1004 Features • High Performance FPGA Fabric • 15K to 115K four input Look-up Tables LUT4s • 132 to 942 I/Os


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    PDF DS1004 DS1004 700MHz 600Mbps 125Gbps) 105mW

    TCD1254GFG(8Z)

    Abstract: No abstract text available
    Text: SKM 75GB063D 8% W PX YH+ / * 00 ,4&)5?20) 09)%2D2)@ Absolute Maximum Ratings Symbol Conditions IGBT GHF1 8Z W PX YH :H 8Z W NXO YH :H^_ ¥OO G NOO L 8%'0) W ]X YH ]X L NXO L a PO G 8Z W NPX YH NO f0 8%'0) W PX YH ]X L 8%'0) W gO YH XO L NXO L 8Z W NXO YH hhO


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    PDF 75GB063D 75GAR063D TCD1254GFG(8Z)

    SILICON POWER CUBE

    Abstract: "Silicon Power Cube" silicon power cube m50 600R M25E M5060 M2535SB POWER CUBE SBR 400V m25 diode
    Text: SILICON POWER CUBE CORP 20E D • OQOQSQfl =1 f l E 5 3 e1Qa SILICON POWER CUBE rvT iïim m M 2 5 /M 5 0 SERIES 3 5A -100A POWER DIODE CIRCUITS FEATURES PARAMETER DC Output Current, 10 Max. DC Output Current, 30 (Max.) One-Cycle Surge Current (Peak) l2t for Fusing (Max.)


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    PDF M25/M50 5A-100A 2500VAC M5060 SILICON POWER CUBE "Silicon Power Cube" silicon power cube m50 600R M25E M5060 M2535SB POWER CUBE SBR 400V m25 diode

    Untitled

    Abstract: No abstract text available
    Text: Diodes Schottky Barrier Diode RB521S-30 /N ew / •Applications •External dimensions Units: mm Low current rectification CATHODE MARK •Features ; o Î . .I Schottky barrier diodes ?, ° +(i +j; 1)Designed for mounting on extremely small surface areas (EMD2)


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    PDF RB521S-30 200mA RB521S-30

    Untitled

    Abstract: No abstract text available
    Text: Diodes Schottky Barrier Diode RB751V-40 •Extemal dimensions Units: mm •A pplications High speed switching CATHODE MARK •F e a tu re s 1)Designecf for mounting on small surface areas (UMD2) 2)High reliability 1.25±0.1 •C onstruction Silicon epitaxial


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    PDF RB751V-40 1000m

    Untitled

    Abstract: No abstract text available
    Text: DF200AA120/160 DIODE MODULE UL;E76102 M Power Diode Module D F 2 0 0 A A is designed for three phase full wave rectification, which has six diodes connected in a three phase bridge configuration. The mounting base of the module is electri­ cally isolated from semiconductor elements for simple heatsink


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    PDF DF200AA120/160 E76102 200Amp DF200AA160 DF200AA

    Untitled

    Abstract: No abstract text available
    Text: D IO D E M O D U L E f .R.d . FDF60BA50/60 UL;E76102(M) Power Diode Module F D F 6 0 B A is designed for single phase full wave rectification, which has four fast recovery diodes connected in a single phase bridge configuration. F D F 6 0 B A is suitable for


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    PDF FDF60BA50/60 E76102 100ns DC60A

    Untitled

    Abstract: No abstract text available
    Text: TR A NSISTO R MODULE three phases bridge type QF20AA40/60 QF20AA is a six pack Darlington power transistor module which has six transistors connected in three phase bridge configuration. Each transistor has a reverse paralleled fast recovery diode. The


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    PDF QF20AA40/60 QF20AA 400/600V 7T11243 00021b3 QF20AA

    Untitled

    Abstract: No abstract text available
    Text: THYRISTOR MODULE PK pd,pe,kk 55GB UL;E76102(M) Power Thyristor/Diode Module P K 5 5G B series are designed for various rectifier circuits and power controls. For your circuit application, following internal connections and wide voltage rat­ ings up to 800 V are available, and electrically isolated mounting


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    PDF E76102 II00A PK55GB B-196

    Untitled

    Abstract: No abstract text available
    Text: IGBT MODULE GCA75AA60 UL; E76102 M SanRex IGBT Module GCA75AA60 is designed for high speed, high current switching applications. This Module is electrically isolated and contains two IGBTs connected in series with a fast switching, soft recovery diode (trr = 0.1/rs) reverse connected


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    PDF GCA75AA60 E76102 GCA75AA60 100/i 500/i

    15JUL

    Abstract: s42f diode s42f
    Text: Temic BPV23NFL S e m iconductors Silicon PIN Photodiode Description BPV23NFL is a high speed and high sensitive PIN photo­ diode in a plastic package with a spherical side view lens and extra long leads. The epoxy package itself is an IR filter, spectrally


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    PDF BPV23NFL BPV23NFL l5-Jul-96 15-Jul-96 15JUL s42f diode s42f