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    M 3055 POWER TRANSISTOR Search Results

    M 3055 POWER TRANSISTOR Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    M 3055 POWER TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    44H11

    Abstract: A 3150 ic 45h11 3055 sot-223 sod923 2955 sot223 IC A 3150 SOT 363 darlington CXT7090L 7120
    Text: Bipolar Power Transistors Surface Mount Packages Actual Size SOD-923 SOT-923 SOT-953 SOD-523 SOT-523 SOT-563 SOD-323 SOT-323 SOT-363 SOD-123 SOD-123F SOT-23 SOT-23F SOT-143 SOT-26 SOT-28 SOT-89 SOT-223 SOT-228 SMA SMB SMC SOIC-16 HD DIP TLP Tiny Leadless


    Original     		PDF OD-923 OT-923 OT-953 OD-523 OT-523 OT-563 OD-323 OT-323 OT-363 OD-123 44H11 A 3150 ic 45h11 3055 sot-223 sod923 2955 sot223 IC A 3150 SOT 363 darlington CXT7090L 7120

    LAMBDA alpha 400w service MANUAL

    Abstract: HWS150-24/A MTBF 1000w audio amplifier circuit diagram 2000w audio amplifier circuit diagram SWS300 CB report 700w audio amplifier circuit diagram 3000w audio amplifier CSS150 diagram alpha 400W 1200w power amplifier circuit diagram
    Text: Innovating Reliable Power The choice and application of the power supply is an important one. Working with TDK-Lambda can help you save time and money, from design concept to years after your system or product is first installed. Why TDK-Lambda? ‹ Over the last 60 years, TDK-Lambda has developed a


    Original     		PDF 1-800-LAMBDA-4 LAMBDA alpha 400w service MANUAL HWS150-24/A MTBF 1000w audio amplifier circuit diagram 2000w audio amplifier circuit diagram SWS300 CB report 700w audio amplifier circuit diagram 3000w audio amplifier CSS150 diagram alpha 400W 1200w power amplifier circuit diagram

    LAMBDA alpha 400w service MANUAL

    Abstract: LAMBDA Alpha ii 650W circuit SDA 1000W inverter circuit diagram tdk lambda alpha 400w atx - 500w power supply output diagram 2000W inverter circuit diagram 48vdc to 230vac inverters circuit diagram LAMBDA Alpha 600W circuit LAMBDA Alpha 600W circuit diagram sda 5222
    Text: Lambda for Low Cost of Ownership The choice and application of the power supply is an important one. Working with Lambda can help you save time and money, from design concept to years after your system or product is first installed. Why Lambda? ‹ Over the last 59 years, Lambda has developed a worldwide


    Original     		PDF 1-800-LAMBDA-4 LAMBDA alpha 400w service MANUAL LAMBDA Alpha ii 650W circuit SDA 1000W inverter circuit diagram tdk lambda alpha 400w atx - 500w power supply output diagram 2000W inverter circuit diagram 48vdc to 230vac inverters circuit diagram LAMBDA Alpha 600W circuit LAMBDA Alpha 600W circuit diagram sda 5222

    LAMBDA alpha 400w service MANUAL

    Abstract: jws600-24 Lambda instruction manual SMD D3S vega kit 528 48V DC to 12v dc 40 amp converter circuit diagram 1000W 12 to 220 1000w inverter LAMBDA Alpha 600W circuit atx 450w scheme tdk lambda alpha 400w LWD30
    Text: Lambda for Low Cost of Ownership The choice and application of the power supply is an important one. Working with Lambda can help you save time and money, from design concept to years after your system or product is first installed. Why Lambda? ‹ Over the last 60 years, Lambda has developed a worldwide


    Original     		PDF 1-800-LAMBDA-4 LAMBDA alpha 400w service MANUAL jws600-24 Lambda instruction manual SMD D3S vega kit 528 48V DC to 12v dc 40 amp converter circuit diagram 1000W 12 to 220 1000w inverter LAMBDA Alpha 600W circuit atx 450w scheme tdk lambda alpha 400w LWD30

    MC10EP01

    Abstract: EP01 MC100EP01 KEP01
    Text: MC10EP01, MC100EP01 3.3V / 5V ECL 4-Input OR/NOR Description The MC10EP01 is a 4−input OR/NOR gate. The device is functionally equivalent to the EL01 device, LVEL01, and E101 a quad version . With AC performance much faster than the LVEL01 device, the EP01 is ideal for applications requiring the fastest AC


    Original     		PDF MC10EP01, MC100EP01 MC10EP01 LVEL01, LVEL01 HEP01 KEP01 EP01 MC100EP01 KEP01

    Motorola transistors MJE3055

    Abstract: Motorola transistors MJE2955 IC TC 3588 MJE2955 power amplifier circuit MJE2955 mje3055 transistor MJE3055 1N5825 MJD2955 30 amp npn transistor
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN M JD 2955 Com plem entary Power Transistors PNP M JD 3055 DPAK For Surface Mount Applications ‘ Motorola Preferred Device Designed for general purpose amplifier and low speed switching applications. • • • •


    OCR Scan     		PDF MJE2955 MJE3055 1Ol50Â MJD6036 MJD3039 Motorola transistors MJE3055 Motorola transistors MJE2955 IC TC 3588 MJE2955 power amplifier circuit mje3055 transistor MJE3055 1N5825 MJD2955 30 amp npn transistor

    3055

    Abstract: 3055 npn A 3055 transistor 3055
    Text: 4 S i» 2 N 3055 'V Diffundierter Silizium-NPN-Mesa-Leistungstransistor Diffused Silicon NPN Mesa Power Transistor Anwendungen: Schalter hoher Leistung und NF-Endstufen Applications: High power switching and AF-output stages Besondere M erkm ale: Features:


    OCR Scan     		PDF

    transistor mj 3055

    Abstract: d2955 transistor Amp 3055 Motorola transistors MJE3055 TO 127 mje3055 127 case data Motorola transistors MJE3055 Motorola transistors MJE2955 transistor 30 j 127 L 3055 motorola mje2955 data
    Text: MOTOROLA Order this document by MJ D2955/D SEMICONDUCTOR TECHNICAL DATA PNP M JD 2955 Com plem entary Power Transistors NPN M JD 3055 DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. • • •


    OCR Scan     		PDF D2955/D MJE2955 MJE3055 transistor mj 3055 d2955 transistor Amp 3055 Motorola transistors MJE3055 TO 127 mje3055 127 case data Motorola transistors MJE3055 Motorola transistors MJE2955 transistor 30 j 127 L 3055 motorola mje2955 data

    2SC3055

    Abstract: E3 37497 2sc3055 transistor high power switching transistor
    Text: FUJITSU MICROEL ECT RONICS 31E D E3 3?»H7b2 QQlbSbD a S F M I January 1990 i 9 i T - r 'T m!on1-1_ P R O D U C T P R O F I L E = ¥ FUJITSU - ' 2SC3055 Silicon High Speed Power Transistor DESCRIPTION Th e 2SC 3055 is a silicon NPN planar general purpose, high power switching tran*


    OCR Scan     		PDF 2SC3055 2SC3055 laC3055 374CJ7LB T-33-07 E3 37497 2sc3055 transistor high power switching transistor

    PNP 2SD

    Abstract: T1P61 2N3055 2N3055SD 2N3054 2N3439 2N3440 2N3713 BD224 2N3715
    Text: 1 SEMICONDUCTORS INC OTE D | fi!3bbSG 0D0DSÖ2 4 | Power Transistors •c D E V IC E Max v CEO M ax A v hFE M in / M a x <$ lç P O L A R IT Y Powered by ICminer.com A v CE sat M a x fti Iq V A »T M in p D (M a x) T C =25°C MHi W PACK­ AGE 2N 3054 2N 3055


    OCR Scan     		PDF 2N3054 2N3055 2N3055SD 2N3439 2N3440 2N3713 2N3714 2N3715 2N3716 2N3740 PNP 2SD T1P61 BD224

    TRANSISTOR BDX 538

    Abstract: bdx 540 TRANSISTOR BDX 14 bdx 538 BDX18 TRANSISTOR BDX 18n TRANSISTOR BDX 3055 5C pnp transistor TRANSISTOR BDX 536 transistor BDX 65
    Text: BDX 18 BOX 18 l\l PNP SILICON TRANSISTORS, EPITAXIAL BASE TR AN SIS TO R S PNP S IL IC IU M , BASE E P IT A X IE E Compì, of 2N 3055 LF large signal power amplification Am plification B F grands signaux de puissance High current switching Commutation fo rt courant


    OCR Scan     		PDF CB-19 BDX18, BDX18N TRANSISTOR BDX 538 bdx 540 TRANSISTOR BDX 14 bdx 538 BDX18 TRANSISTOR BDX 18n TRANSISTOR BDX 3055 5C pnp transistor TRANSISTOR BDX 536 transistor BDX 65

    N3055

    Abstract: e 3055 t hall sensor interface UGS3055U 3055m
    Text: 3055 MULTIPLEXED TWO-WIRE HALL EFFECT SENSOR ICs I- The UG N3055U and UGS3055U Hall effect sensors are digital magnetic sensing ICs capable of com m unicating over a two-wire power/signal bus. Using a sequential addressing scheme, the device responds to a signal on the bus and returns the diagnostic status of the


    OCR Scan     		PDF N3055U UGS3055U N3055 e 3055 t hall sensor interface 3055m

    2N3055

    Abstract: 2N3055 curve 2n6253 2N6371 2N 6254
    Text: POWER TRANSISTORS PT TYPE NO. @ 25°C Watts M A X IM U M RATINGS Ic V V V A laarca i h FE liv r a MIN M AX El A V<fE V Sat Voltages V be V« V V Test Conditions Ib Ic A A IE B P ma 2N 3055 117 100 60 7 15 20 70 4 4 1.1 1.8 4 .4 5.0 2N 6253 115 55 45 5 15 20


    OCR Scan     		PDF 2N6371 -ill50 2N3055 2N6253 2N6254 TWX-510-224-6582 2N3055 curve 2N6371 2N 6254

    3055 transistor

    Abstract: transistor 3055 3055 2N3055 2SC 2276 M 3055 power transistor n3055 2N3066 power transistor 3055 33S3
    Text: 2SC T> m flS3SbOS D004T11 * mZI ZG . T ~ 2 3 -/ 3 NPN Transistor for Powerful AF Output Stages 2 N 3055 -SIEMENS AKTIENGESELLSCHAF-2 N 3055 is a single diffused NPN silicon transistor in TO 3 case 3 A 2 DIN 41872). The collector is electrically connected to the case. The transistor is particularly suitable for


    OCR Scan     		PDF D004T11 Q62702-U58 005ms aa35b05 3055 transistor transistor 3055 3055 2N3055 2SC 2276 M 3055 power transistor n3055 2N3066 power transistor 3055 33S3

    DIODE IN 3055

    Abstract: e 3055 t T 3055 NTE 3055 3055 national
    Text: September 1996 Nat i onal Semic on ducto r NDT3055 N -C h a n n el E n h a n c e m e n t M o d e ield E ffect T ra n s is to r General Description Features Power SOT N-Channel enhancement mode power field effect transistors are produced using National's


    OCR Scan     		PDF NDT3055 DIODE IN 3055 e 3055 t T 3055 NTE 3055 3055 national

    2n3055

    Abstract: bd 3055
    Text: POWER CASES TRANSISTORS ; _ P - 2 2 _ TQ- ?_ TQ- 220 T Y P E NPN PNP SDT 9302 SDT 9303 SDT 9304 SDT 9305 SDT 9306 SDT 9307 SDT 9308 SDT 9309 $ TIP 29 $ TIP 30 $ TIP 29A $ TIP 30A $ TIP 29B $ TIP 30B


    OCR Scan     		PDF O-220 T0-220 2n3055 bd 3055

    2N3D55

    Abstract: SDT9202 2N3055 12V SDT9204 SDT9201 SDT9203 2N3055 2N3055 silicon solidev kuhnke relay 24vdc
    Text: Sem iconductors Solidev Silicon Power Transistors P H Y S IC A L D IM E N S IO N S Silicon N P N Power Transistors— 15 A m p FEATURES Rugged single diffused technology - 1MHz fT. Low saturation voltage - typically 0.3 V at Ic = 4 amps. High typical gain.


    OCR Scan     		PDF 2N3D55 SDT9201 SDT9202 SDT9203 SDT9204 2N3055 5064A 35065X 2N3055 12V SDT9204 2N3055 silicon solidev kuhnke relay 24vdc

    J2955

    Abstract: 2n3055 motorola transistor 2N 3055 st 2n3055 2n 3055 2N3055 ST 2N3055-1 adc 305-5 Motorola 3055 2n 3055 transistor
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA I1DM 2N 3055* Com plem entary Silicon Power Transistors PNP . . . designed for general-purpose switching and amplifier applications. • • • •Motoroli Piefm ed Devtoe DC Current Gain — hFE = 2 0 -7 0 @ lc = 4 Adc


    OCR Scan     		PDF J2955 2N3055 J2955 2n3055 motorola transistor 2N 3055 st 2n3055 2n 3055 2N3055 ST 2N3055-1 adc 305-5 Motorola 3055 2n 3055 transistor

    RCA3055

    Abstract: RCA3054
    Text: 01 •387 5 0 8 1 G E SOLID ì> È T |3 a 7 s o a i STATE General-Purpose Power Transistors 01E 0 0 1 7 4 7 t, t D T" 3 3 -ff 17476 - ftCA3054, RCA3055


    OCR Scan     		PDF 001747b ftCA3054, RCA3055 RCA3054 RCA3055 RCA3055. 750fll RCA3054,

    BDX 241

    Abstract: BD 35 transistor 3055 transistor TRANSISTOR BDX transistor 3055 transistor BUx 49 transistor BD 140 TRANSISTOR BDX 14 transistor 2N 3055 transistor bd 905
    Text: TOP-3 general purpose transistor selector guide y guide de sélection transistors TO P-3 usage général THOMSON-CSF ^ \ \ C E O (sus 45V 60V 80V 100V BD 249 BD 249A BD 249B BD 249C BD 250 BD 250A BD 250B BD 250C Case 25 A T0-220AB general purpose transistor selector guide


    OCR Scan     		PDF T0-220AB O-220AB 5-40V BD710 CB-19 BDX 241 BD 35 transistor 3055 transistor TRANSISTOR BDX transistor 3055 transistor BUx 49 transistor BD 140 TRANSISTOR BDX 14 transistor 2N 3055 transistor bd 905

    2N 3055

    Abstract: 2N3055 ESM434 BDX 71 2N5294 2N6109 2N6111 ESM435 ESM142 84132N
    Text: N PN Power transistors « Homobase » L l: amplifier and switching » Transistors de puissance « Homobase » Amplification et commutation BF Case f*tot m * B oîtie r O ui _ Compì. > Type C (A ^21E m in max A / (A) Tease 25 C / v CEsat iv i y 'B (A )


    OCR Scan     		PDF TPu75 2N5294 2N6111 2N6109 2N 3055 2N3055 ESM434 BDX 71 ESM435 ESM142 84132N

    transistor bd 202

    Abstract: transistor BD 249 BDX 241 B0707 BD transistor transistor bd 911 transistor 2N 3055 5294 power transistor transistor BD 139 transistor bd 711
    Text: TOP-3 general purpose transistor selector guide guide de sélection transistors TOP-3 usage général y TH O M SO N -CSF ^ \ \ C E O (sus 45V 60V 80V 100V BD 249 BD 249A BD 249B BD 249C BD 250 BD 250A BD 250B BD 250C Case 25 A T0-220AB general purpose transistor selector guide


    OCR Scan     		PDF T0-220AB O-220AB 5-40V BD710 CB-244 transistor bd 202 transistor BD 249 BDX 241 B0707 BD transistor transistor bd 911 transistor 2N 3055 5294 power transistor transistor BD 139 transistor bd 711

    h21e

    Abstract: 3055 pnp transistor 3055 TRANSISTOR BDX 14 Transistors 2n3054
    Text: A C T IV E C O M PO N EN TS FOR H Y B R ID C IR C U IT S COMPOSANTS ACTIFS POUR CIRCUITS HYBRIDES NPN planar power transistors chips Transistors de puissance planar (pastilles) Type Type V CBO (V) V CEO (V) 'cm (A) V CE (V) h21E !C (m A ) min max J.2N 2890


    OCR Scan     		PDF

    2N3055

    Abstract: 2N3055 TO220 2N3055 TO-220 "Solenoid Drivers" 2N3442 2N6103 2N3054 2N3441 2N6099 2N6101
    Text: NPN DIFFUSED JUNCTION T A B L E 1 - NPN S ILIC O N D IF F U S E D JU N C T IO N T R A N S IS T O R S The transistors shown in this table are designed for high current, high dissipation applications where a large safe operating area is required. Typical applications areas include a wide variety


    OCR Scan     		PDF 2N6103 T0-220 2N3055* 2N3442 2N6101 O-220 2N3055 2N3055 TO220 2N3055 TO-220 "Solenoid Drivers" 2N3054 2N3441 2N6099