F240 transistor
Abstract: TTL LS 7400 Transistor F240 LS00 from Motorola 12MRM IC TTL 7400 propagation delay LS TTL family characteristics 7400 TTL ls 7400 LS00
Text: Circuit Characteristics FAST AND LS TTL 2 CIRCUIT CHARACTERISTICS FAMILY CHARACTERISTICS LS TTL The Low Power Schottky LSTTL family combines a current and power reduction improvement over standard 7400 TTL by a factor of 5. This is accomplished by using Schottky diode clamping to prevent saturation and advanced processing.
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54/74S)
Mil-Std-883C
12MRM
3831A
3830A
F240 transistor
TTL LS 7400
Transistor F240
LS00 from Motorola
IC TTL 7400 propagation delay
LS TTL family characteristics
7400 TTL
ls 7400
LS00
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internal structure 74LS00 nand gate
Abstract: Multivibrator 7400 examples 93831A 7400 fan-out RS-481-A 74lsxxx 74LS00 gate IC TTL 7400 quiescent power IC 7400 truth table TTL 7400 propagation delay
Text: GENERAL INFORMATION TTL in Perspective performance. We therefore recommend the VHC, High Speed and FACT products for all new 5.0 Volt designs. Further improvements in power reduction can be achieved using the LVX, LCX or VCX running at 3.3 Volts. Improvements in electrostatic discharge susceptibility in
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20-Pin
internal structure 74LS00 nand gate
Multivibrator 7400 examples
93831A
7400 fan-out
RS-481-A
74lsxxx
74LS00 gate
IC TTL 7400 quiescent power
IC 7400 truth table
TTL 7400 propagation delay
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IC TTL 74LS00
Abstract: TTL LS 7400 IC TTL 74 ls 04 7400 fan-out cmos 7400 fan-out TTL 7400 catalog TTL 74ls00 TTL 7400 rise and fall time of ic 74ls00 74LS00 gate
Text: Design Considerations, Testing and Applications Assistance Form FAST AND LS TTL FAST AND LS TTL DATA 3-1 3 DESIGN CONSIDERATIONS SELECTING TTL LOGIC. TTL Families may be mixed in a system for optimum performance. For instance, in new designs, ALS would commonly be used in non-critical speed paths to minimize power consumption while FAST TTL would be used in high
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Untitled
Abstract: No abstract text available
Text: HIGH VOLTAGE RADIAL LEADED CAPACITORS X7R AND NPO DIELECTRIC EPOXY COATED AND UNCOATED RADIAL LEADED CAPACITORS SPECIFICATIONS: OPERATING TEMPERATURE RANGE – 55°C to +125°C High temperature to 250°C available TEMPERATURE COEFFICIENT X7R: NPO: ± 15% ∆C
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RL1814
RL1824
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Untitled
Abstract: No abstract text available
Text: R o h r k a b e ls c h u h e K u rz e Cable lugs V e r s io n S h o r t v e rs io n Artikel-Nummer Leiter- Bolzen Abmessungen mm Verp.-Einh. Stud Dimensions mm Standard querschnitt Part number Wire size Stuck packing mm2 M d2 d3 L P S 1 a d1 r s Piece RSQ 7400 A 3.5 - 2
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rs flip-flop IC 7400
Abstract: 74ls105 TTL LS 7400 74LS series logic gates 7400 fan-out 74LS 3 input AND gate IC TTL 7400 schematic 74LS04 fan-out 74ls series logic family 90 watts inverter by 12v dc with 6 transisters
Text: GENERAL DESCRIPTION ABSOLUTE MAXIMUM RATINGS Ovar operating free-air temper ature range unless otherwise noted Supply Voltage Vq c (See Note 1) Input Voltage V|n (See Note 1) Interemitter Voltage (See Note 2) Resistor Node Voltage, 54121, 74121 (See Note 1)
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74LS324
Abstract: 7400 TTL 74LS327 7402, 7404, 7408, 7432, 7400 80C96 74251 multiplexer 74C923 equivalent Flip-Flop 7473 74LS324 equivalent 74C08 equivalent
Text: N T E ELECTRONICS INC 17E H ^3125=1 G0G513S Q B - o S V. ! - TRANSISTOR-TRANSISTOR LOGIC INCLUDES SERIES 74C CMOS NTE TYPE NO. •DESCRIPTION . 7214 7400 74C00 74H00 74LS00 74S00 3-State Sel/Mlpx Quad 2-Input Pos Quad 2-Input Pos Quad 2-Input Pos Quad 2-Input Pos
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OCR Scan
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G0G513S
74C00
74H00
74LS00
74S00
74H01
74LS01
74C02
74LS02
74S02
74LS324
7400 TTL
74LS327
7402, 7404, 7408, 7432, 7400
80C96
74251 multiplexer
74C923 equivalent
Flip-Flop 7473
74LS324 equivalent
74C08 equivalent
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ls 7400
Abstract: 7400 signetics TTL TTL LS 7400 7400 ls 7400 pin configuration TTL 7400 propagation delay 74l500 74LS00 signetics 74ls00 tr tf 74LS00 function table
Text: Signetìcs I 7400, LS00, S00 Gates Quad Two-Input NAND Gate Product Specification Logic Products TY PE T Y P IC A L PR O P A G A TIO N D E LA Y T Y P IC A L SU P P LY C U R R E N T TO T A L 9ns 8m A 74LS00 9.5ns 1.6mA 74SOO 3ns 15m A 7400 ORDERING CODE C O M M E R C IA L RA NG E
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OCR Scan
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74LS00
74SOO
N7400N,
N74LS00N,
N74S00N
N74LS00D,
N74S00D
10Sul
10LSul
WF07570S
ls 7400
7400 signetics TTL
TTL LS 7400
7400 ls
7400 pin configuration
TTL 7400 propagation delay
74l500
74LS00 signetics
74ls00 tr tf
74LS00 function table
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PDF
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7400 signetics
Abstract: 74LS00 7400 74S00 74LS00 function table 7400 pin configuration N7400N TTL 7400 propagation delay 74LS00 DATA TTL 7400 7400 signetics TTL 74LS00
Text: Signetics I 7400, LS00, S00 Gates Quad Two-Input NAND Gate Product Specification Logic Products TYPE TY PIC A L PR O PAG ATIO N D ELAY 7400 74LS00 74S00 TY P IC A L S U P P LY C U R R E N T TO TAL 9ns 8m A 9.5 n s 1.6m A 3n s 15m A ORDERING CODE C O M M ER C IA L R A N G E
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OCR Scan
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74LS00
74S00
N7400N,
N74LS00N,
N74S00N
N74LS00D,
N74S00D
10Sul
10LSul
7400 signetics
74LS00 7400 74S00
74LS00 function table
7400 pin configuration
N7400N
TTL 7400 propagation delay
74LS00 DATA
TTL 7400
7400 signetics TTL
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TTL 7401
Abstract: 7400B2A1 7400D4A1 TCXO 16MHZ 7400A1A1 TCXO 20MHz TTL 7400 AN 7145 M tcxo monitor 7400B
Text: MONITOR PRODUCTS CO I NC M7E 1> b5Tîü7b 0 . 0 0 0 21 2 4 • MPCO7^S ö ~c 5~ TCVCXOs VOLTAGE CONTROLLED TCXO 7034 f Frequency Range: 3.0M H z - 16MHz Frequency S tability: + 3 0 p p m Operating Tem perature Range: -55°C to + 85°C Input V oltage: 5VDC
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OCR Scan
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16MHz
30ppm
20MHz
12VDC/5VDC
TTL 7401
7400B2A1
7400D4A1
TCXO 16MHZ
7400A1A1
TCXO 20MHz
TTL 7400
AN 7145 M
tcxo monitor
7400B
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IC 7410
Abstract: 7410 JRC IC 7430 IC 7420 IC 7400 nand OF IC 7410 7410 ic ls 7400 hc 7400 7410 1c
Text: - 25- Triple 3 Input NAND 7410 Vcc 1C IV ac 38 3A 3Y ninininiLriiniriif ft IB 2A 2B 2C 2Y GND O Y = A •B •C 74S10 N LS ALS ALSK F S AS AC max L-*H T 22 15 11 8 6 4.5 4.5 11.1 12. 3,24 30 ns tpd max H—»L 1 15 15 10 7 5. 3 5 4.5 11.1 12.3 24 30 ins IN
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ls 7400
Abstract: 7400 ls 74LS00 CI 7400 74H00 CT7400 CT5400 CT54 a 741 j ITT 7400
Text: C T 5 4 /7 4 ,C T 5 1 /7 4 H , € 1 5 4 /7 4 8 ,0 1 5 4 /7 4 1 .8 P3 2 i l A ^ 1 h l C T 5 4 0 0 /C T 7 4 0 0 C T54SO O /C T 74SO O C T 5 4 H 0 0 /C T 7 4 H 00 C T 54LSO O /C T74LSO O ili 2 na V5) (JÌ (10) m n o t i ? « > , # # 5 4 . 7 4 00, W '74H 0 0 . 54 .' 74X00, fa54 74 t-S(H)K «•«*«&!$$
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CT54/74
CT51/74H,
CT5400/CT7400
CT54SOO/CT74SOO
CT54HOO/CT74HOO
-74LS0oMÂ
/CT7400
CT54H00/CT74HOO
CT54SOO/CT74SOO
CT54LS00/CT74LS00
ls 7400
7400 ls
74LS00
CI 7400
74H00
CT7400
CT5400
CT54
a 741 j
ITT 7400
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ls 7400
Abstract: ls 7404 7410 JRC HC 7404 hc 7400 7404 ls TTL 7404 7400 hc 7404 74LS04 NOT gate
Text: 7404 - 19- Hex Inverters 74LS04 « 0 * tpd max tpd A ?] IN 74S04 Util OH N LS ALS ALSK F S AS AC ACT HC HCU HCT L-»H t 22 15 11 7 4. 5 5 5 .9 8 .5 23 19 24 23 19 24 1 max 6 8 .5 8 6 5 .3 5 4 5 .9 2 .4 1.1 3 4 .2 24 4.8 0 .0 4 0 .0 4 0 .0 2 0.02 0.0 2 oA
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OCR Scan
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74LS04
ls 7400
ls 7404
7410 JRC
HC 7404
hc 7400
7404 ls
TTL 7404
7400 hc
7404
74LS04 NOT gate
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earom
Abstract: CI 2811 7400 TTL ITT 7400 TTL 7400 rise and fall time
Text: I Preliminary Data Sheet N C R 8192-BIT EAROM MEMORY 2811 NCR CORPORATION M ICRO ELECTRONICS DIVISION 8181 BYERS ROAD M IAM ISBURG , OHIO 45342 I (513) 866-7471 T LX 28-8010 NCRM ICRO , MSBG Electrically alterable ROM MNOS P-channel technology S T A N D A R D 2 4 P IN S ID E B R A Z E D IP
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OCR Scan
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8192-BIT
11-Bit
earom
CI 2811
7400 TTL
ITT 7400
TTL 7400 rise and fall time
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Untitled
Abstract: No abstract text available
Text: APT5010LVFR A dvanced pow er Te c h n o lo g y 5 0 0 V POWER MOS V 4 7 A 0 .1 0 0 Q FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
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OCR Scan
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APT5010LVFR
O-264
APT5010LVFR
-10mS
-100mS
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sm 126 ao 570
Abstract: No abstract text available
Text: A d P O T e v a W c n E h c e A d P T 5 1 J V F R R n o l o g y 5 POWER MOS V v 4 4 0 . 1 a o o q FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
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OCR Scan
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O-264
APT5010JVFR
E145592
sm 126 ao 570
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Untitled
Abstract: No abstract text available
Text: • r A d van c ed W :Æ P ow er jàÊM Tec h n o lo g y APT501OLVR soov 47a 0.1ooq POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™
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OCR Scan
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APT501OLVR
O-264
APT5010LVR
5r182
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PDF
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APT5010
Abstract: No abstract text available
Text: • R W 'æ APT501OJVR A dvanced pow er Te c h n o l o g y ' soov 44a o .i o o q POWER MOS V‘ Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
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OCR Scan
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APT501OJVR
OT-227
APT5010JVR
E145592
APT5010
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PDF
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TTL SN 54S00
Abstract: No abstract text available
Text: SN5400, SN54LS00, SIU54S00, SN7400, SN74LS00, SN74S00 QUADRUPLE 2 INPUT POSITIVE NAND GATES D E C E M B E R 1 9 8 3 - R E V IS E D M A R C H 1 988 Package Options Include Plastic "Small Outline" Packages, Ceramic Chip Carriers and Flat Packages, and Plastic and Ceramic
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OCR Scan
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SN5400,
SN54LS00,
SIU54S00,
SN7400,
SN74LS00,
SN74S00
54LS00,
54S00
74LS00,
74S00
TTL SN 54S00
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PDF
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Untitled
Abstract: No abstract text available
Text: • R A dvanced W .\A APT5010B2VR pow er Te c h n o lo g y " 500v 47a 0.1 ooq POWER MOS V‘ P ow er M OS V is a new generation o f high voltage N -C hannel enhancem ent m ode pow er M O S FE Ts. This new technolo gy m inim izes the JF E T effect, increases packing d ensity and reduces the on-resistance. Power M OS V®
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OCR Scan
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APT5010B2VR
O-247
APT5010B2VR
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PDF
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CCO-40
Abstract: APT5010LVR 250DS
Text: APT501OLVR • R A dvanced W .\A pow er Te c h n o lo g y " 500v 47a 0.1 ooq POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
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OCR Scan
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APT501OLVR
O-264
APT5010LVR
CCO-40
250DS
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PDF
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Untitled
Abstract: No abstract text available
Text: • R A dvanced r M po w er Tec h n o lo g y APT5012WVR 500v 40a 0.120Q POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
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OCR Scan
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APT5012WVR
APT5012W
O-267
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PDF
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ls 7400 n
Abstract: No abstract text available
Text: APT5010B2VFR • R A dvanced W .\A pow er Te c h n o lo g y " 500v POWER MOS V 47a 0.1 ooq FREDFET Pow er M OS V is a new generation o f high voltage N -C hannel enhancem ent m ode pow er M O S FE Ts. This new technolo gy m inim izes the JF E T effect, increases packing d ensity and reduces the on-resistance. Power M OS V®
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OCR Scan
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APT5010B2VFR
O-247
ls 7400 n
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PDF
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tl 7400
Abstract: 7400D4A1 7400 ls ls 7400 7400A1A1 7400B2A1 TTL 7401 7400d4a AN 7145 M m 7401
Text: MONITOR PRODUCTS CO INC 47E D • b 2 T i[ ] 7 b DDOQETE 4 ■ MPCO T- S c - o s ' TCVCXOs VOLTAGE CONTROLLED TCXO 7034 Frequency Range: 3.0MHz - 16MHz Frequency Stability: +30ppm Operating Temperature Range: -55°C to + 85°C Input Voltage: 5VDC Input Current: 35mA
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OCR Scan
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16MHz
30ppm
20MHz
12VDC/5VDC
7400A1A1
7400B2A1
7400D4A1
7401B2
7401B
7401D7'
tl 7400
7400 ls
ls 7400
TTL 7401
7400d4a
AN 7145 M
m 7401
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