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    LRF640A

    Abstract: s18a IRF640A
    Text: IRF640A A d vance d Power MOSFET FEATURES BVoss = 200 V • ■ ■ ■ ■ ■ Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 p A Max. @ I Lower Rqs(on) ■ 0-150 £1 (Typ.)


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    PDF IRF640A O-220 100TC LRF640A IRF64 LRF640A s18a IRF640A