LRF640A Search Results

LRF640A

Abstract: s18a IRF640A
Text: IRF640A A d vance d Power MOSFET FEATURES BVoss = 200 V • ■ ■ ■ ■ ■ Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 p A Max. @ I Lower Rqs(on) ■ 0-150 £1 (Typ.)