LOW-POWER SILICON PNP Search Results

LOW-POWER SILICON PNP Result Highlights (6)

Part	Manufacturer	Description
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
TPD4164F	Toshiba Electronic Devices & Storage Corporation	Intelligent power device / VBB=600V / Iout=2A/ Surface mount type / HSSOP31
TPD4164K	Toshiba Electronic Devices & Storage Corporation	Intelligent power device / VBB=600V / Iout=2A/ Through hole type / HDIP30
TPD4163K	Toshiba Electronic Devices & Storage Corporation	Intelligent power device / VBB=600V / Iout=1A/ Through hole type / HDIP30
TPD4163F	Toshiba Electronic Devices & Storage Corporation	Intelligent power device / VBB=600V / Iout=1A/ Surface mount type / HSSOP31
TPD4207F	Toshiba Electronic Devices & Storage Corporation	Intelligent power device 600V (High voltage PWM DC brushless motor driver)

LOW-POWER SILICON PNP Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
MJE200 Abstract: MJE210G 1N5825 MJE200G MJE210 MJE210T MJE210TG MSD6100 to225 Text: MJE200 - NPN, MJE210 - PNP Preferred Device Complementary Silicon Power Plastic Transistors These devices are Ădesigned for low voltage, low-power, high-gain audio amplifier applications. Features http://onsemi.com 5.0 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON	Original	PDF	MJE200 MJE210 MJE200/D MJE210G 1N5825 MJE200G MJE210T MJE210TG MSD6100 to225
Untitled Abstract: No abstract text available Text: MJE200 - NPN, MJE210 - PNP Preferred Device Complementary Silicon Power Plastic Transistors These devices are Ădesigned for low voltage, low-power, high-gain audio amplifier applications. Features http://onsemi.com 5.0 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON	Original	PDF	MJE200 MJE210 MJE200/D
MJE243G Abstract: to225 PD15120 MJE253 MJE253G MJE243 to-225 pd 242 Text: MJE243 - NPN, MJE253 - PNP Preferred Device Complementary Silicon Power Plastic Transistors These devices are designed for low power audio amplifier and low-current, high-speed switching applications. Features 4.0 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON	Original	PDF	MJE243 MJE253 O-225 MJE243G to225 PD15120 MJE253G to-225 pd 242
Untitled Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD 2SB647 PNP EPITAXIAL SILICON TRANSISTOR SILICON PNP EPITAXIAL  DESCRIPTION The UTC 2SB647 is a PNP epitaxial silicon transistor, which can be used as a low frequency power amplifier.  APPLICATION * Low frequency power amplifier	Original	PDF	2SB647 2SB647 2SB647L-x-T9N-B 2SB647G-x-T9N-B 2SB647L-x-T9N-K 2SB647G-x-T9N-K O-92NL QW-R211-010
mje253 Abstract: No abstract text available Text: MJE243 - NPN, MJE253 - PNP Complementary Silicon Power Plastic Transistors These devices are designed for low power audio amplifier and low−current, high−speed switching applications. Features 4.0 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON 100 VOLTS, 15 WATTS	Original	PDF	MJE243 MJE253 MJE243/D
MJE243 Abstract: MJE243G 200 watts audio amp power transistors circuit diagram MJE243-D 1N5825 MJE253 MJE253G MSD6100 Text: MJE243 - NPN, MJE253 - PNP Complementary Silicon Power Plastic Transistors These devices are designed for low power audio amplifier and low−current, high−speed switching applications. Features 4.0 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON 100 VOLTS, 15 WATTS	Original	PDF	MJE243 MJE253 O-225 MJE243/D MJE243G 200 watts audio amp power transistors circuit diagram MJE243-D 1N5825 MJE253G MSD6100
MJE243G Abstract: MJE-253 MJE243 MJE253 1N5825 MJE253G MSD6100 200 watts audio amp power transistors circuit diagram mje253 transistor Text: MJE243 − NPN, MJE253 − PNP Preferred Device Complementary Silicon Power Plastic Transistors These devices are designed for low power audio amplifier and low−current, high−speed switching applications. Features 4.0 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON	Original	PDF	MJE243 MJE253 O-225d MJE243/D MJE243G MJE-253 1N5825 MJE253G MSD6100 200 watts audio amp power transistors circuit diagram mje253 transistor
MJE200G Abstract: MJE200 MJE210 MJE210G MJE210T MJE210TG to225 Text: MJE200 - NPN, MJE210 - PNP Preferred Device Complementary Silicon Power Plastic Transistors These devices are Ădesigned for low voltage, low-power, high-gain audio amplifier applications. Features 5.0 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON 25 VOLTS, 15 WATTS	Original	PDF	MJE200 MJE210 MJE200G MJE210G MJE210T MJE210TG to225
Untitled Abstract: No abstract text available Text: MJE243G NPN , MJE253G (PNP) Complementary Silicon Power Plastic Transistors These devices are designed for low power audio amplifier and low−current, high−speed switching applications. Features • • • • • • 4.0 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON	Original	PDF	MJE243G MJE253Gâ MJE243/D
Untitled Abstract: No abstract text available Text: MJE243G NPN , MJE253G (PNP) Complementary Silicon Power Plastic Transistors These devices are designed for low power audio amplifier and low−current, high−speed switching applications. Features • • • • • • 4.0 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON	Original	PDF	MJE243G MJE253Gâ MJE243/D
1N5825 Abstract: MJE200 MJE200G MJE210 MJE210G MJE210T MJE210TG MSD6100 Text: MJE200 − NPN, MJE210 − PNP Preferred Device Complementary Silicon Power Plastic Transistors These devices are designed for low voltage, low−power, high−gain audio amplifier applications. Features 5.0 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON	Original	PDF	MJE200 MJE210 MJE200/D 1N5825 MJE200G MJE210G MJE210T MJE210TG MSD6100
2SB601 Abstract: No abstract text available Text: DATA SHEET SILICON POWER TRANSISTOR 2SB601 PNP SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING FEATURES PACKAGE DRAWING (UNIT: mm) • High-DC current gain due to Darlington connection • Low collector saturation voltage	Original	PDF	2SB601 2SB601
PNP Transistor DPAK Abstract: No abstract text available Text: MJD200 NPN MJD210 (PNP) Complementary Plastic Power Transistors NPN/PNP Silicon DPAK For Surface Mount Applications http://onsemi.com Designed for low voltage, low−power, high−gain audio amplifier applications. SILICON POWER TRANSISTORS 5 AMPERES 25 VOLTS	Original	PDF	MJD200 MJD210 PNP Transistor DPAK
MJD200RL Abstract: 1N5825 MJD200 MJD200G MJD200RLG MJD200T4 MJD210 MSD6100 Text: MJD200 NPN MJD210 (PNP) Complementary Plastic Power Transistors NPN/PNP Silicon DPAK For Surface Mount Applications http://onsemi.com Designed for low voltage, low−power, high−gain audio amplifier applications. SILICON POWER TRANSISTORS 5 AMPERES 25 VOLTS	Original	PDF	MJD200 MJD210 MJD200/D MJD200RL 1N5825 MJD200 MJD200G MJD200RLG MJD200T4 MJD210 MSD6100

1N5825 Abstract: MJD200 MJD210 MSD6100 Text: ON Semiconductort NPN Complementary Plastic Power Transistors MJD200 PNP MJD210 NPN/PNP Silicon DPAK For Surface Mount Applications SILICON POWER TRANSISTORS 5 AMPERES 25 VOLTS 12.5 WATTS . . . designed for low voltage, low–power, high–gain audio amplifier	Original	PDF	MJD200 MJD210 r14525 MJD200/D 1N5825 MJD200 MJD210 MSD6100
1N5825 Abstract: MJD200 MJD210 MSD6100 Text: ON Semiconductort NPN Complementary Plastic Power Transistors MJD200 PNP MJD210 NPN/PNP Silicon DPAK For Surface Mount Applications SILICON POWER TRANSISTORS 5 AMPERES 25 VOLTS 12.5 WATTS . . . designed for low voltage, low–power, high–gain audio amplifier	Original	PDF	MJD200 MJD210 r14525 MJD200/D 1N5825 MJD200 MJD210 MSD6100
Untitled Abstract: No abstract text available Text: MJE200 NPN , MJE210 (PNP) Complementary Silicon Power Plastic Transistors These devices are designed for low voltage, low−power, high−gain audio amplifier applications. Features • • • • • 5.0 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON	Original	PDF	MJE200 MJE210 MJE200/D
Untitled Abstract: No abstract text available Text: MJD200 NPN , MJD210 (PNP) Complementary Plastic Power Transistors NPN/PNP Silicon DPAK For Surface Mount Applications http://onsemi.com Designed for low voltage, low−power, high−gain audio amplifier applications. SILICON POWER TRANSISTORS 5 AMPERES 25 VOLTS, 12.5 WATTS	Original	PDF	MJD200 MJD210 AEC-Q101 MJD200/D
2SB1430 Abstract: No abstract text available Text: DATA SHEET SILICON POWER TRANSISTOR 2SB1430 PNP SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SB1430 is a Darlington power transistor that can directly PACKAGE DRAWING (UNIT: mm) drive from the IC output. This transistor is ideal for motor drivers	Original	PDF	2SB1430 2SB1430
up2518 Abstract: UP2518G-AE3-R Text: UNISONIC TECHNOLOGIES CO., LTD UP2518 Preliminary PNP SILICON TRANSISTOR LOW VCE SAT PNP SILICON POWER TRANSISTORS FEATURES * Extremely low collector-emitter saturation voltage VCE(SAT) and corresponding extremely low equivalent on-resistance RCE(SAT)	Original	PDF	UP2518 UP2518L UP2518G UP2518L-AE3-R UP2518-AE3-R UP2518G-AE3-R OT-23 QW-R206-083 up2518 UP2518G-AE3-R
trasistor Abstract: 2SB1465 NEC RELAY nec 5 Text: DATA SHEET DARLINGTON TRASISTOR 2SB1465 PNP SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SB1465 is a mold power darlington transistor developed for low-frequency power amplifier and low-speed	Original	PDF	2SB1465 2SB1465 trasistor NEC RELAY nec 5
MJE721 Abstract: mje720 MJE711 Silicon Power Transistors MJE722 mje712 to126 case Power Transistors TO-126 Case Text: MJE710 MJE711 MJE720 MJE721 MJE712 MJE722 Central PNP NPN COMPLEMENTARY SILICON POWER TRANSISTORS TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR MJE710, MJE720 series types are Complementary Silicon Power Transistors designed for low power amplifier and	Original	PDF	MJE710 MJE711 MJE720 MJE721 MJE712 MJE722 MJE710, O-126 MJE721 Silicon Power Transistors MJE722 to126 case Power Transistors TO-126 Case
MJE130 Abstract: mje135 MJE230 MJE220 MJE221 MJE222 MJE225 MJE231 MJE235 200 watts audio amp power transistors pnp Text: MJE220 thru MJE225 NPN SILICON MJE230 thru MJE235 PNP COMPLEMENTARY PLASTIC SILICON POWER TRANSISTORS 4 AMPERE POWER TRANSISTORS . . . designed for low power audio amplifier and low current, high speed switching applications. • COMPLEMENTARY SILICON	OCR Scan	PDF	MJE220 MJE225 MJE230 MJE235 MJE220/MJE222 MJE230/MJE232 MJE223/MJE225 MJE233/MJE235 MJE221 MJE222 MJE130 mje135 MJE231 200 watts audio amp power transistors pnp
transistor BD 141 Abstract: transistor BD 378 TRANSISTOR BD 168 MJE712 MJE711 bd 125 equivalent MJE710 MJE720 bd transistor series plji Text: MJE710 SILICON MJE711 MJE712 PNP SILICON MEDIUM-POWER TRANSISTORS 1.5 AMPERE POWER TRANSISTORS PNP SILICON . . . designed fo r use in low power amplifiers, as drivers in high-power amplifier and medium-speed switching circuits. • DC Current Gain hpE = 40 (Min) @ I q “ 150 mAdc	OCR Scan	PDF	MJE710 MJE711 MJE720. MJE721, MJE722 MJE710 Continuo00 AN-415) transistor BD 141 transistor BD 378 TRANSISTOR BD 168 MJE712 bd 125 equivalent MJE720 bd transistor series plji

LOW-POWER SILICON PNP Search Results

LOW-POWER SILICON PNP Result Highlights (6)

LOW-POWER SILICON PNP Datasheets Context Search

MJE200

Untitled

MJE243G

Untitled

mje253

MJE243

MJE243G

MJE200G

Untitled

Untitled

1N5825

2SB601

PNP Transistor DPAK

MJD200RL

1N5825

1N5825

Untitled

Untitled

2SB1430

up2518

trasistor

MJE721

MJE130

transistor BD 141