MJE200
Abstract: MJE210G 1N5825 MJE200G MJE210 MJE210T MJE210TG MSD6100 to225
Text: MJE200 - NPN, MJE210 - PNP Preferred Device Complementary Silicon Power Plastic Transistors These devices are Ădesigned for low voltage, low-power, high-gain audio amplifier applications. Features http://onsemi.com 5.0 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON
|
Original
|
MJE200
MJE210
MJE200/D
MJE210G
1N5825
MJE200G
MJE210T
MJE210TG
MSD6100
to225
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MJE200 - NPN, MJE210 - PNP Preferred Device Complementary Silicon Power Plastic Transistors These devices are Ădesigned for low voltage, low-power, high-gain audio amplifier applications. Features http://onsemi.com 5.0 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON
|
Original
|
MJE200
MJE210
MJE200/D
|
PDF
|
MJE243G
Abstract: to225 PD15120 MJE253 MJE253G MJE243 to-225 pd 242
Text: MJE243 - NPN, MJE253 - PNP Preferred Device Complementary Silicon Power Plastic Transistors These devices are designed for low power audio amplifier and low-current, high-speed switching applications. Features 4.0 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON
|
Original
|
MJE243
MJE253
O-225
MJE243G
to225
PD15120
MJE253G
to-225
pd 242
|
PDF
|
Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 2SB647 PNP EPITAXIAL SILICON TRANSISTOR SILICON PNP EPITAXIAL DESCRIPTION The UTC 2SB647 is a PNP epitaxial silicon transistor, which can be used as a low frequency power amplifier. APPLICATION * Low frequency power amplifier
|
Original
|
2SB647
2SB647
2SB647L-x-T9N-B
2SB647G-x-T9N-B
2SB647L-x-T9N-K
2SB647G-x-T9N-K
O-92NL
QW-R211-010
|
PDF
|
mje253
Abstract: No abstract text available
Text: MJE243 - NPN, MJE253 - PNP Complementary Silicon Power Plastic Transistors These devices are designed for low power audio amplifier and low−current, high−speed switching applications. Features 4.0 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON 100 VOLTS, 15 WATTS
|
Original
|
MJE243
MJE253
MJE243/D
|
PDF
|
MJE243
Abstract: MJE243G 200 watts audio amp power transistors circuit diagram MJE243-D 1N5825 MJE253 MJE253G MSD6100
Text: MJE243 - NPN, MJE253 - PNP Complementary Silicon Power Plastic Transistors These devices are designed for low power audio amplifier and low−current, high−speed switching applications. Features 4.0 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON 100 VOLTS, 15 WATTS
|
Original
|
MJE243
MJE253
O-225
MJE243/D
MJE243G
200 watts audio amp power transistors circuit diagram
MJE243-D
1N5825
MJE253G
MSD6100
|
PDF
|
MJE243G
Abstract: MJE-253 MJE243 MJE253 1N5825 MJE253G MSD6100 200 watts audio amp power transistors circuit diagram mje253 transistor
Text: MJE243 − NPN, MJE253 − PNP Preferred Device Complementary Silicon Power Plastic Transistors These devices are designed for low power audio amplifier and low−current, high−speed switching applications. Features 4.0 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON
|
Original
|
MJE243
MJE253
O-225d
MJE243/D
MJE243G
MJE-253
1N5825
MJE253G
MSD6100
200 watts audio amp power transistors circuit diagram
mje253 transistor
|
PDF
|
MJE200G
Abstract: MJE200 MJE210 MJE210G MJE210T MJE210TG to225
Text: MJE200 - NPN, MJE210 - PNP Preferred Device Complementary Silicon Power Plastic Transistors These devices are Ădesigned for low voltage, low-power, high-gain audio amplifier applications. Features 5.0 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON 25 VOLTS, 15 WATTS
|
Original
|
MJE200
MJE210
MJE200G
MJE210G
MJE210T
MJE210TG
to225
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MJE243G NPN , MJE253G (PNP) Complementary Silicon Power Plastic Transistors These devices are designed for low power audio amplifier and low−current, high−speed switching applications. Features • • • • • • 4.0 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON
|
Original
|
MJE243G
MJE253Gâ
MJE243/D
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MJE243G NPN , MJE253G (PNP) Complementary Silicon Power Plastic Transistors These devices are designed for low power audio amplifier and low−current, high−speed switching applications. Features • • • • • • 4.0 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON
|
Original
|
MJE243G
MJE253Gâ
MJE243/D
|
PDF
|
1N5825
Abstract: MJE200 MJE200G MJE210 MJE210G MJE210T MJE210TG MSD6100
Text: MJE200 − NPN, MJE210 − PNP Preferred Device Complementary Silicon Power Plastic Transistors These devices are designed for low voltage, low−power, high−gain audio amplifier applications. Features 5.0 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON
|
Original
|
MJE200
MJE210
MJE200/D
1N5825
MJE200G
MJE210G
MJE210T
MJE210TG
MSD6100
|
PDF
|
2SB601
Abstract: No abstract text available
Text: DATA SHEET SILICON POWER TRANSISTOR 2SB601 PNP SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING FEATURES PACKAGE DRAWING (UNIT: mm) • High-DC current gain due to Darlington connection • Low collector saturation voltage
|
Original
|
2SB601
2SB601
|
PDF
|
PNP Transistor DPAK
Abstract: No abstract text available
Text: MJD200 NPN MJD210 (PNP) Complementary Plastic Power Transistors NPN/PNP Silicon DPAK For Surface Mount Applications http://onsemi.com Designed for low voltage, low−power, high−gain audio amplifier applications. SILICON POWER TRANSISTORS 5 AMPERES 25 VOLTS
|
Original
|
MJD200
MJD210
PNP Transistor DPAK
|
PDF
|
MJD200RL
Abstract: 1N5825 MJD200 MJD200G MJD200RLG MJD200T4 MJD210 MSD6100
Text: MJD200 NPN MJD210 (PNP) Complementary Plastic Power Transistors NPN/PNP Silicon DPAK For Surface Mount Applications http://onsemi.com Designed for low voltage, low−power, high−gain audio amplifier applications. SILICON POWER TRANSISTORS 5 AMPERES 25 VOLTS
|
Original
|
MJD200
MJD210
MJD200/D
MJD200RL
1N5825
MJD200
MJD200G
MJD200RLG
MJD200T4
MJD210
MSD6100
|
PDF
|
|
1N5825
Abstract: MJD200 MJD210 MSD6100
Text: ON Semiconductort NPN Complementary Plastic Power Transistors MJD200 PNP MJD210 NPN/PNP Silicon DPAK For Surface Mount Applications SILICON POWER TRANSISTORS 5 AMPERES 25 VOLTS 12.5 WATTS . . . designed for low voltage, low–power, high–gain audio amplifier
|
Original
|
MJD200
MJD210
r14525
MJD200/D
1N5825
MJD200
MJD210
MSD6100
|
PDF
|
1N5825
Abstract: MJD200 MJD210 MSD6100
Text: ON Semiconductort NPN Complementary Plastic Power Transistors MJD200 PNP MJD210 NPN/PNP Silicon DPAK For Surface Mount Applications SILICON POWER TRANSISTORS 5 AMPERES 25 VOLTS 12.5 WATTS . . . designed for low voltage, low–power, high–gain audio amplifier
|
Original
|
MJD200
MJD210
r14525
MJD200/D
1N5825
MJD200
MJD210
MSD6100
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MJE200 NPN , MJE210 (PNP) Complementary Silicon Power Plastic Transistors These devices are designed for low voltage, low−power, high−gain audio amplifier applications. Features • • • • • 5.0 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON
|
Original
|
MJE200
MJE210
MJE200/D
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MJD200 NPN , MJD210 (PNP) Complementary Plastic Power Transistors NPN/PNP Silicon DPAK For Surface Mount Applications http://onsemi.com Designed for low voltage, low−power, high−gain audio amplifier applications. SILICON POWER TRANSISTORS 5 AMPERES 25 VOLTS, 12.5 WATTS
|
Original
|
MJD200
MJD210
AEC-Q101
MJD200/D
|
PDF
|
2SB1430
Abstract: No abstract text available
Text: DATA SHEET SILICON POWER TRANSISTOR 2SB1430 PNP SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SB1430 is a Darlington power transistor that can directly PACKAGE DRAWING (UNIT: mm) drive from the IC output. This transistor is ideal for motor drivers
|
Original
|
2SB1430
2SB1430
|
PDF
|
up2518
Abstract: UP2518G-AE3-R
Text: UNISONIC TECHNOLOGIES CO., LTD UP2518 Preliminary PNP SILICON TRANSISTOR LOW VCE SAT PNP SILICON POWER TRANSISTORS FEATURES * Extremely low collector-emitter saturation voltage VCE(SAT) and corresponding extremely low equivalent on-resistance RCE(SAT)
|
Original
|
UP2518
UP2518L
UP2518G
UP2518L-AE3-R
UP2518-AE3-R
UP2518G-AE3-R
OT-23
QW-R206-083
up2518
UP2518G-AE3-R
|
PDF
|
trasistor
Abstract: 2SB1465 NEC RELAY nec 5
Text: DATA SHEET DARLINGTON TRASISTOR 2SB1465 PNP SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SB1465 is a mold power darlington transistor developed for low-frequency power amplifier and low-speed
|
Original
|
2SB1465
2SB1465
trasistor
NEC RELAY nec 5
|
PDF
|
MJE721
Abstract: mje720 MJE711 Silicon Power Transistors MJE722 mje712 to126 case Power Transistors TO-126 Case
Text: MJE710 MJE711 MJE720 MJE721 MJE712 MJE722 Central PNP NPN COMPLEMENTARY SILICON POWER TRANSISTORS TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR MJE710, MJE720 series types are Complementary Silicon Power Transistors designed for low power amplifier and
|
Original
|
MJE710
MJE711
MJE720
MJE721
MJE712
MJE722
MJE710,
O-126
MJE721
Silicon Power Transistors
MJE722
to126 case
Power Transistors TO-126 Case
|
PDF
|
MJE130
Abstract: mje135 MJE230 MJE220 MJE221 MJE222 MJE225 MJE231 MJE235 200 watts audio amp power transistors pnp
Text: MJE220 thru MJE225 NPN SILICON MJE230 thru MJE235 PNP COMPLEMENTARY PLASTIC SILICON POWER TRANSISTORS 4 AMPERE POWER TRANSISTORS . . . designed for low power audio amplifier and low current, high speed switching applications. • COMPLEMENTARY SILICON
|
OCR Scan
|
MJE220
MJE225
MJE230
MJE235
MJE220/MJE222
MJE230/MJE232
MJE223/MJE225
MJE233/MJE235
MJE221
MJE222
MJE130
mje135
MJE231
200 watts audio amp power transistors pnp
|
PDF
|
transistor BD 141
Abstract: transistor BD 378 TRANSISTOR BD 168 MJE712 MJE711 bd 125 equivalent MJE710 MJE720 bd transistor series plji
Text: MJE710 SILICON MJE711 MJE712 PNP SILICON MEDIUM-POWER TRANSISTORS 1.5 AMPERE POWER TRANSISTORS PNP SILICON . . . designed fo r use in low power amplifiers, as drivers in high-power amplifier and medium-speed switching circuits. • DC Current Gain hpE = 40 (Min) @ I q “ 150 mAdc
|
OCR Scan
|
MJE710
MJE711
MJE720.
MJE721,
MJE722
MJE710
Continuo00
AN-415)
transistor BD 141
transistor BD 378
TRANSISTOR BD 168
MJE712
bd 125 equivalent
MJE720
bd transistor series
plji
|
PDF
|