trasistor
Abstract: 2SB1465 NEC RELAY nec 5
Text: DATA SHEET DARLINGTON TRASISTOR 2SB1465 PNP SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SB1465 is a mold power darlington transistor developed for low-frequency power amplifier and low-speed
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2SB1465
2SB1465
trasistor
NEC RELAY nec 5
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Untitled
Abstract: No abstract text available
Text: DATA SHEET DARLINGTON TRASISTOR 2SB1465 PNP SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SB1465 is a mold power darlington transistor developed for low-frequency power amplifier and low-speed
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2SB1465
2SB1465
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NEC RELAY
Abstract: 2sb146 NEC RELAY nec 5 2SB1465 C11531E NEC semiconductor
Text: PRELIMINARY DATA SHEET DARLINGTON POWER TRANSISTOR 2SB1465 PNP SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SB1465 is a mold power transistor developed for low- PACKAGE DRAWING (UNIT: mm)
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2SB1465
2SB1465
C11531E)
NEC RELAY
2sb146
NEC RELAY nec 5
C11531E
NEC semiconductor
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2SB1087
Abstract: No abstract text available
Text: Inchange Semiconductor Product Specification 2SB1087 Silicon PNP Power Transistors DESCRIPTION ・With TO-220C package ・High DC current gain ・DARLINGTON APPLICATIONS ・For low frequency power amplifier and low speed power switching applications PINNING
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2SB1087
O-220C
-30mA,
-100V,
2SB1087
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2SB1087
Abstract: TO-220C TO220C
Text: JMnic Product Specification 2SB1087 Silicon PNP Power Transistors DESCRIPTION ・With TO-220C package ・High DC current gain ・DARLINGTON APPLICATIONS ・For low frequency power amplifier and low speed power switching applications PINNING PIN DESCRIPTION
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2SB1087
O-220C
-30mA,
-100V,
2SB1087
TO-220C
TO220C
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2SB1087
Abstract: No abstract text available
Text: SavantIC Semiconductor Product Specification 2SB1087 Silicon PNP Power Transistors DESCRIPTION •With TO-220C package ·High DC current gain ·DARLINGTON APPLICATIONS ·For low frequency power amplifier and low speed power switching applications PINNING PIN
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2SB1087
O-220C
-30mA,
-100V,
2SB1087
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MJE200
Abstract: MJE210G 1N5825 MJE200G MJE210 MJE210T MJE210TG MSD6100 to225
Text: MJE200 - NPN, MJE210 - PNP Preferred Device Complementary Silicon Power Plastic Transistors These devices are Ădesigned for low voltage, low-power, high-gain audio amplifier applications. Features http://onsemi.com 5.0 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON
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MJE200
MJE210
MJE200/D
MJE210G
1N5825
MJE200G
MJE210T
MJE210TG
MSD6100
to225
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2SB550
Abstract: No abstract text available
Text: Inchange Semiconductor Product Specification 2SB550 Silicon PNP Power Transistors DESCRIPTION •With TO-66 package ·Low collector saturation voltage APPLICATIONS ·For low frequency power amplification ·For low speed and power switching PINNING see Fig.2
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2SB550
-10mA;
2SB550
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Untitled
Abstract: No abstract text available
Text: MJE200 - NPN, MJE210 - PNP Preferred Device Complementary Silicon Power Plastic Transistors These devices are Ădesigned for low voltage, low-power, high-gain audio amplifier applications. Features http://onsemi.com 5.0 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON
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MJE200
MJE210
MJE200/D
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MJE243G
Abstract: to225 PD15120 MJE253 MJE253G MJE243 to-225 pd 242
Text: MJE243 - NPN, MJE253 - PNP Preferred Device Complementary Silicon Power Plastic Transistors These devices are designed for low power audio amplifier and low-current, high-speed switching applications. Features 4.0 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON
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MJE243
MJE253
O-225
MJE243G
to225
PD15120
MJE253G
to-225
pd 242
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2SB550
Abstract: No abstract text available
Text: SavantIC Semiconductor Product Specification 2SB550 Silicon PNP Power Transistors DESCRIPTION •With TO-66 package ·Low collector saturation voltage APPLICATIONS ·For low frequency power amplification ·For low speed and power switching PINNING see Fig.2
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2SB550
-10mA;
2SB550
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mje243
Abstract: No abstract text available
Text: MJE243 - NPN, MJE253 - PNP Preferred Device Complementary Silicon Power Plastic Transistors These devices are designed for low power audio amplifier and low-current, high-speed switching applications. Features http://onsemi.com 4.0 AMPERES POWER TRANSISTORS
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MJE243
MJE253
MJE243/D
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zero crossing detector in rectifier circuit
Abstract: AN652 MOSFET and parallel Schottky diode synchronous rectifier mosfet 74HC04 APP652 calculating rectifier circuits switching-regulator ic Reduced conduction losses rectifier zero crossing detector mosfet
Text: Maxim > App Notes > BATTERY MANAGEMENT POWER-SUPPLY CIRCUITS Keywords: Synchronous Rectification Aids Low-Voltage Power Supplies Jan 31, 2001 APPLICATION NOTE 652 Synchronous Rectification Aids Low-Voltage Power Supplies Synchronous rectifiers can improve switching-power-supply efficiency, particularly in low-voltage low-power
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12-hour
com/an652
AN652,
APP652,
Appnote652,
zero crossing detector in rectifier circuit
AN652
MOSFET and parallel Schottky diode
synchronous rectifier mosfet
74HC04
APP652
calculating rectifier circuits
switching-regulator ic
Reduced conduction losses rectifier
zero crossing detector mosfet
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mje253
Abstract: No abstract text available
Text: MJE243 - NPN, MJE253 - PNP Complementary Silicon Power Plastic Transistors These devices are designed for low power audio amplifier and low−current, high−speed switching applications. Features 4.0 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON 100 VOLTS, 15 WATTS
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MJE243
MJE253
MJE243/D
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AA3R
Abstract: 2SB772S V/AA3R
Text: UNISONIC TECHNOLOGIES CO., 2SB772S PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR DESCRIPTION The UTC 2SB772S is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator. FEATURES
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2SB772S
2SB772S
2SD882S
OT-223
2SB772SL
2SB772S-AA3-R
2SB772SL-AA3-R
OT-223
QW-R207-012
AA3R
V/AA3R
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MJE243G
Abstract: MJE-253 MJE243 MJE253 1N5825 MJE253G MSD6100 200 watts audio amp power transistors circuit diagram mje253 transistor
Text: MJE243 − NPN, MJE253 − PNP Preferred Device Complementary Silicon Power Plastic Transistors These devices are designed for low power audio amplifier and low−current, high−speed switching applications. Features 4.0 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON
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MJE243
MJE253
O-225d
MJE243/D
MJE243G
MJE-253
1N5825
MJE253G
MSD6100
200 watts audio amp power transistors circuit diagram
mje253 transistor
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MJE200G
Abstract: MJE200 MJE210 MJE210G MJE210T MJE210TG to225
Text: MJE200 - NPN, MJE210 - PNP Preferred Device Complementary Silicon Power Plastic Transistors These devices are Ădesigned for low voltage, low-power, high-gain audio amplifier applications. Features 5.0 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON 25 VOLTS, 15 WATTS
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MJE200
MJE210
MJE200G
MJE210G
MJE210T
MJE210TG
to225
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2SB772L-T
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., 2SB772 PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR DESCRIPTION The UTC 2SB772 is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator. 1 FEATURES
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2SB772
2SB772
2SD882
O-251
2SB772L
2SB772-TM3-R
2SB772L-TM3-R
O-251
QW-R213-016
2SB772L-T
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to225
Abstract: MJE182 MJE181 MJE170 MJE171 to-225 MJE182G MJE180G MJE172 MJE180
Text: MJE170, MJE171, MJE172 PNP , MJE180, MJE181, MJE182 (NPN) Preferred Device Complementary Plastic Silicon Power Transistors The MJE170/180 series is designed for low power audio amplifier and low current, high speed switching applications. 3 AMPERES POWER TRANSISTORS
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MJE170,
MJE171,
MJE172
MJE180,
MJE181,
MJE182
MJE170/180
MJE180
to225
MJE182
MJE181
MJE170
MJE171
to-225
MJE182G
MJE180G
MJE172
MJE180
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Untitled
Abstract: No abstract text available
Text: MJE170, MJE171, MJE172 PNP , MJE180, MJE181, MJE182 (NPN) Complementary Plastic Silicon Power Transistors http://onsemi.com The MJE170/180 series is designed for low power audio amplifier and low current, high speed switching applications. 3 AMPERES POWER TRANSISTORS
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MJE170,
MJE171,
MJE172
MJE180,
MJE181,
MJE182
MJE170/180
MJE180
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2SB772S-T92-B
Abstract: 2SB772S-T92-K 2SD882S 2SB772S 2SB772SL-T92-B 2SB772SL-T92-K transistor T 023
Text: UNISONIC TECHNOLOGIES CO., 2SB772S PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR DESCRIPTION The UTC 2SB772S is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator. 1 FEATURES
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2SB772S
2SB772S
2SD882S
2SB772SL
2SB772S-T92-B
2SB772SL-T92-B
2SB772S-T92-K
2SB772SL-T92-K
QW-R201-023
2SD882S
2SB772SL-T92-B
2SB772SL-T92-K
transistor T 023
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SB2202
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD. SB2202 PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR DESCRIPTION The UTC SB2202 is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator.
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SB2202
SB2202
SB2202L-x-TM3-R
SB2202G-x-TM3-R
SB2202L-x-TN3-T
SB2202G-x-TN3-T
SB2202L-x-TN3-R
SB2202G-x-TN3-R
O-251
O-252
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BD787
Abstract: bd788 MSD6100 1N5825
Text: ON Semiconductort NPN BD787 Complementary Plastic Silicon Power Transistors PNP BD788 . . . designed for lower power audio amplifier and low current, high–speed switching applications. • Low Collector–Emitter Sustaining Voltage — • • 4 AMPERE POWER TRANSISTORS
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BD787
BD788
BD787,
r14525
BD787/D
BD787
bd788
MSD6100
1N5825
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MJE130
Abstract: mje135 MJE230 MJE220 MJE221 MJE222 MJE225 MJE231 MJE235 200 watts audio amp power transistors pnp
Text: MJE220 thru MJE225 NPN SILICON MJE230 thru MJE235 PNP COMPLEMENTARY PLASTIC SILICON POWER TRANSISTORS 4 AMPERE POWER TRANSISTORS . . . designed for low power audio amplifier and low current, high speed switching applications. • COMPLEMENTARY SILICON
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MJE220
MJE225
MJE230
MJE235
MJE220/MJE222
MJE230/MJE232
MJE223/MJE225
MJE233/MJE235
MJE221
MJE222
MJE130
mje135
MJE231
200 watts audio amp power transistors pnp
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