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    LOW NOISE TRANSISTOR BF 179 Search Results

    LOW NOISE TRANSISTOR BF 179 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    TCR2EF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
    TCR2LF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
    TCR3DF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 300 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation

    LOW NOISE TRANSISTOR BF 179 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor Bf 981

    Abstract: transistor BF 257 Transistor 0235 BF bf 671 transistor BF 236 transistor bf 324 BF 273 transistor BF775 transistor marking zg bf 695
    Text: BF 775 TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications RF-amplifier up to 2GHz especially for wide band antenna amplifier mixers and oscillators in TV-sat-tuners. Features D High power gain D Low noise figure D High transition frequency


    Original     		PDF BF775 D-74025 transistor Bf 981 transistor BF 257 Transistor 0235 BF bf 671 transistor BF 236 transistor bf 324 BF 273 transistor transistor marking zg bf 695

    m03 transistor

    Abstract: NE AND micro-X nec 08e 2SC5434 NE680 NE680M03 S21E BF179 bjt npn m03 low noise transistor bF 179
    Text: PRELIMINARY DATA SHEET NPN SILICON TRANSISTOR NE680M03 OUTLINE DIMENSIONS Units in mm FEATURES • NEW M03 PACKAGE: • Smallest transistor outline package available • Low profile/0.59 mm package height • Flat lead style for better RF performance HIGH GAIN BANDWIDTH PRODUCT:


    Original     		PDF NE680M03 NE680M03 24-Hour m03 transistor NE AND micro-X nec 08e 2SC5434 NE680 S21E BF179 bjt npn m03 low noise transistor bF 179

    LOT CODE NE NEC

    Abstract: nec 08e 2SC5434 NE680 NE680M03 S21E nec manufacture year bf179
    Text: PRELIMINARY DATA SHEET NPN SILICON TRANSISTOR NE680M03 OUTLINE DIMENSIONS Units in mm FEATURES • PACKAGE OUTLINE M03 NEW M03 PACKAGE: • Smallest transistor outline package available • Low profile/0.59 mm package height • Flat lead style for better RF performance


    Original     		PDF NE680M03 NE680M03 LOT CODE NE NEC nec 08e 2SC5434 NE680 S21E nec manufacture year bf179

    BF340

    Abstract: SOT343 C5 IC 0829 START405 START405TR
    Text: START405 NPN Silicon RF Transistor • LOW NOISE FIGURE: NFmin = 1.1dB @ 1.8GHz, 2mA, 2V • COMPRESSION P1dB = 5dBm @ 1.8GHz, 5mA, 2V • TRANSITION FREQUENCY 42GHz • LOW CURRENT CONSUMPTION • ULTRA MINIATURE SOT343 PACKAGE SOT343 SC70 ORDER CODE START405TR


    Original     		PDF START405 42GHz OT343 OT343 START405TR START405 500MHz-5GHz BF340 SOT343 C5 IC 0829 START405TR

    IC 74196

    Abstract: kf 982 CMP16 2 GHz BJT CMP10 HBFP-0405 ku-band oscillator CMP68 r1565 marking 53 Sot-343
    Text: High Performance Isolated Collector Silicon Bipolar Transistor Technical Data HBFP-0405 Features • Ideal for High Gain, Low Current Applications Description Surface Mount Plastic Package/ SOT-343 SC-70 Hewlett Packard’s HBFP-0405 is a high performance isolated


    Original     		PDF HBFP-0405 OT-343 SC-70) HBFP-0405 SC-70 OT-343) 5968-0140E IC 74196 kf 982 CMP16 2 GHz BJT CMP10 ku-band oscillator CMP68 r1565 marking 53 Sot-343

    Untitled

    Abstract: No abstract text available
    Text: High Performance Isolated Collector Silicon Bipolar Transistor Technical Data HBFP-0405 Features • Ideal for High Gain, Low Current Applications Description Surface Mount Plastic Package/ SOT-343 SC-70 Agilent’s HBFP-0405 is a high performance isolated collector


    Original     		PDF HBFP-0405 OT-343 SC-70) HBFP-0405 SC-70 OT343) 5968-5432E 5968-7939E

    dbe 0025

    Abstract: transistor tt 2141 IC 74196 CMP10 HBFP-0405 TR3 303 marking 53 Sot-343
    Text: High Performance Isolated Collector Silicon Bipolar Transistor Technical Data HBFP-0405 Features • Ideal for High Gain, Low Current Applications Description Surface Mount Plastic Package/ SOT-343 SC-70 Agilent’s HBFP-0405 is a high performance isolated collector


    Original     		PDF HBFP-0405 OT-343 SC-70) HBFP-0405 SC-70 OT-343) 5968-7939E 5988-0131EN dbe 0025 transistor tt 2141 IC 74196 CMP10 TR3 303 marking 53 Sot-343

    Untitled

    Abstract: No abstract text available
    Text: High Performance Isolated Collector Silicon Bipolar Transistor Technical Data HBFP-0405 Features • Ideal for High Gain, Low Current Applications Surface Mount Plastic Description Package/ SOT-343 SC-70 Hewlett Packard’s HBFP-0405 is a high performance isolated


    Original     		PDF HBFP-0405 OT-343 SC-70) HBFP-0405 SC-70 OT-343) 5968-0140E 5968-1689E

    dbe 0025

    Abstract: marking 53 Sot-343 362 marking code sot 23-6
    Text: High Performance Isolated Collector Silicon Bipolar Transistor Technical Data HBFP-0405 Features • Ideal for High Gain, Low Current Applications Description Surface Mount Plastic Package/ SOT-343 SC-70 Hewlett Packard’s HBFP-0405 is a high performance isolated


    Original     		PDF HBFP-0405 SC-70 OT-343) OT-343 SC-70) HBFP-0405 curren00 dbe 0025 marking 53 Sot-343 362 marking code sot 23-6

    transistor bf 968

    Abstract: transistor BF 506 832E-3
    Text: START540 NPN Silicon RF Transistor PRELIMINARY DATA • LOW NOISE FIGURE: NFmin = 0.9dB @ 1.8GHz, 5mA, 2V • HIGH OUTPUT IP3 = 24dBm @ 1.8GHz, 20mA, 2V • GOOD RUGGEDNESS BVceo = 4.5V • TRANSITION FREQUENCY 45GHz • ULTRA MINIATURE SOT343 PACKAGE SOT343 SC70


    Original     		PDF START540 24dBm 45GHz OT343 OT343 START540TR START540 transistor bf 968 transistor BF 506 832E-3

    Untitled

    Abstract: No abstract text available
    Text: START540 NPN Silicon RF Transistor • LOW NOISE FIGURE: NFmin = 0.9dB @ 1.8GHz, 5mA, 2V • HIGH OUTPUT IP3 = 24dBm @ 1.8GHz, 20mA, 2V • GOOD RUGGEDNESS BVceo = 4.5V • TRANSITION FREQUENCY 45GHz • ULTRA MINIATURE SOT343 PACKAGE SOT343 SC70 ORDER CODE


    Original     		PDF START540 24dBm 45GHz OT343 OT343 START540TR START540 500MHz-5GHz

    Untitled

    Abstract: No abstract text available
    Text: Temic BF 775 TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications RF-amplifier up to 2GHz especially for wide band antenna amplifier mixers and oscillators in TV-sat-tuners. Features • • • High power gain Low noise figure High transition frequency


    OCR Scan     		PDF BF775 6R200Rb 00127E0 BF775

    Untitled

    Abstract: No abstract text available
    Text: Te m ic BF 775 TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications RF-amplifier up to 2GHz especially for wide band antenna amplifier mixers and oscillators in TV-sat-tuners. Features • • • High power gain Low noise figure High transition frequency


    OCR Scan     		PDF BF775 SyS22 BF775

    zq 405-MF

    Abstract: siemens 30 090 GP 819 SAA 1006 saa 1070
    Text: BSE D • Ö23b320 QQlb^BO T M S I P NPN Silicon RF Transistor SIEMENS/ SPCLi SEMICONDS T'SI'I? BF P193 • For low-noise, high-gain amplifiers up to 2 GHz. • For linear broadband amplifiers. • ff = 8 GHz. F = 1.2 dB at 800 MHz. ESD: Electrostatic discharge sensitive device, observe handling precautions!


    OCR Scan     		PDF 23b320 BFP193 62702-F OT-143 zq 405-MF siemens 30 090 GP 819 SAA 1006 saa 1070

    TRANSISTOR 131-6 BJ 946

    Abstract: transistor bc 564 transistor Bc 949 datenblatt TRANSISTOR BC 545 MARKING CODE AGS bsp 2000 siemens datenbuch bft99 mmic SMD amplifier marking code 19s TRANSISTOR SMD MARKING CODE bc ru DIODE smd marking 22-16
    Text: Typeniibersicht Selection Guide Bestellnummern Ordering Codes Bestempelung Marking Catalog Technische Angaben « Technical Information Qualitatsangaben Quality Specification Gehause Package Outlines Verarbeitungshinweise Mounting Instructions Verpackungshinweise


    OCR Scan     		PDF B3-B3715 B3715-X-X-7600 TRANSISTOR 131-6 BJ 946 transistor bc 564 transistor Bc 949 datenblatt TRANSISTOR BC 545 MARKING CODE AGS bsp 2000 siemens datenbuch bft99 mmic SMD amplifier marking code 19s TRANSISTOR SMD MARKING CODE bc ru DIODE smd marking 22-16

    3866S

    Abstract: BF247 equivalent brochage des circuits integres Triac GK transistor bc 564 BC547E TI Small Signal FET Catalogue bcw 91 transistor SESCO SESCOSEM
    Text: GENERAL INFORMATION , , v^ INFORMATION GENERALE ” ; V Index Index 3 ' v.»A* K \ a 1 Selection guide Guide de sélection Qualified devices Dispositifs homologués Quality Qualité Symbols Symboles DATA SHEETS NOTICES SILICON SIGNAL TRANSISTORS TRANSISTORS DE SIGNAL AU SILICIUM


    OCR Scan     		PDF

    catalogue des transistors bipolaires de puissance

    Abstract: brochage des circuits integres H3C1-07 LB 124 transistor equivalente transistor A2222 equivalent of transistor bc212 bc 214 BFw-11 terminals SESCOSEM transistor equivalente transistor BC 141 Brochage BCW91
    Text: GENERAL INFORMATION , , v^ INFORMATION GENERALE ” ; V Index Index 3 ' v.»A* K \ a 1 Selection guide Guide de sélection Qualified devices Dispositifs homologués Quality Qualité Symbols Symboles DATA SHEETS NOTICES SILICON SIGNAL TRANSISTORS TRANSISTORS DE SIGNAL AU SILICIUM


    OCR Scan     		PDF

    op amp 741 model Spice

    Abstract: op07 spice model differential pair op amp LT1013 substitution LT1012 LT1012A uA 741 op LT1012D LT1024 OP-07
    Text: I II W 'Z -J É r i - ^2□ I II I I I I I Ï À Ï- _ L7 JEC H r JO t ii □ □ □ □ □ r~ DESIGN NOTES Number 28 in a series from Linear Technology Corporation November, 1989 A SPICE Op Amp Macromodel for the LT1012 Walt Jung Introduction The Boyle, et al.1, SPICE macromodel for op amps has proven


    OCR Scan     		PDF LT1012 LT1013 LT1012 DN28-2 op amp 741 model Spice op07 spice model differential pair op amp LT1013 substitution LT1012A uA 741 op LT1012D LT1024 OP-07

    cqx 87

    Abstract: germanium AEG Thyristor T 558 F TDA 2516 bu208 bf506 la 4430 BF963 TDA1086 transistor bf 175
    Text: Page Contents Diodes 8 Transistors 15 Optoelectronic Devices 24 Integrated Circuits 33 1 Contents, alpha-numeric Type Page AA 112 AA113 AA117 AA 118 AA119 AA 132 AA 133 AA 134 AA 137 AA 138 12 12 8 12 12 8 8 8 12 12 BA 111 BA 121 BA 124 BA 125 BA 147/. BA 157


    OCR Scan     		PDF AA113 AA117 AA119 BAV17 BAV18 BAV19 BAV20 BAV21 cqx 87 germanium AEG Thyristor T 558 F TDA 2516 bu208 bf506 la 4430 BF963 TDA1086 transistor bf 175

    TIS43

    Abstract: equivalent of transistor bc214 BF257 Texas equivalent of transistor bc212 bc 214 2N696 TEXAS INSTRUMENTS Q2T2222 TIS70 BFR40 kd 2060 transistor BF195 equivalent
    Text: The Transistor and Diode Data Book for Design Engineers Volume II Northern European Edition IMPORTANT NOTICES Texas Instrum ents Ltd ., reserves the rig h t to make changes at any tim e in order to improve design and to supply the best p ro d u c t possible.


    OCR Scan     		PDF 2S301 BS9300-C-598 2S305 BS9300-C-366 2S307 2S322 CV7396 BS9300-C-396 CV7647 BS9300-C-647 TIS43 equivalent of transistor bc214 BF257 Texas equivalent of transistor bc212 bc 214 2N696 TEXAS INSTRUMENTS Q2T2222 TIS70 BFR40 kd 2060 transistor BF195 equivalent

    Siemens DIODE E 1240

    Abstract: AMS 3630 Code "A06" RF Semiconductor SIEMENS BFP420 Transistor MJE 540 HA 12432 SOT343-3 BFP420 application notes BFP420 A06 ff 0401 transistor
    Text: S IE M E N S SIEGET 25 BFP420 NPN Silicon RF Transistor • • • • • • For High Gain Low Noise Amplifiers For Oscillators up to 10 GHz Noise Figure F = 1.05 dB at 1.8 GHz Outstanding Gms = 20 dB at 1.8 GHz Transition Frequency 1j = 25 GHz Gold metalization for high reliability


    OCR Scan     		PDF BFP420 25-Line Transistor25 Q62702-F1591 OT343 Siemens DIODE E 1240 AMS 3630 Code "A06" RF Semiconductor SIEMENS BFP420 Transistor MJE 540 HA 12432 SOT343-3 BFP420 application notes BFP420 A06 ff 0401 transistor

    SIEMENS BFP405

    Abstract: marking A06 transistor A06
    Text: SIEMENS SIEGET 25 BFP405 NPN Silicon RF Transistor • • • • • • For Low Current Applications For Oscillators up to 12 GHz Noise Figure F = 1.15 dB at 1.8 GHz Outstanding Gms = 22 dB at 1.8 GHz Transition Frequency fT = 25 GHz Gold metalization for high reliability


    OCR Scan     		PDF BFP405 25-Line Transistor25 62702-F-1592 OT343 SIEMENS BFP405 marking A06 transistor A06

    GP 809 DIODE

    Abstract: diode GP 829 M229 kl SN 102 94-0 SOT343 42 SOT 343 MARKING BF marking 53 Sot-343 54GHz kf 982 nh TRANSISTOR
    Text: ¥ ti¡¡%HEW LETT ft "KM PACKARD High Performance Isolated Collector Silicon Bipolar Transistor Technical Data HBFP-0405 Features • Ideal for High Gain, Low Current Applications Surface Mount Plastic Package/SOT-343 SC-70 Outline 4T • Typical Performance at


    OCR Scan     		PDF HBFP-0405 SC-70 OT-343) Package/SOT-343 SC-70) HBFP-0405 5968-0140E GP 809 DIODE diode GP 829 M229 kl SN 102 94-0 SOT343 42 SOT 343 MARKING BF marking 53 Sot-343 54GHz kf 982 nh TRANSISTOR

    8U406

    Abstract: T0252 ba05sfp BA05FP BU2879 32segx4com ba1032 BU9716AK bu9716 BA312
    Text: Memory/Standard tCs Table of Memory/Standard ICs Table of Memory / Standard ICs Ferroelectric memory Operating voltage range Capacity oils 16k Bit configurato Power supply Product No. (word X bit} BR24CF16F voltage (V) 2,048 X 8 5 Read (V) Write (V) 4.5 -5 .5


    OCR Scan     		PDF BR24CF16F voltai99 T0252-5) T0220FP-5-5V T0220FP-5 T0252-5 BA05ST BA05SFP. 8U406 T0252 ba05sfp BA05FP BU2879 32segx4com ba1032 BU9716AK bu9716 BA312