BCB60
Abstract: transistor smd npn ag smd npn darlington "low noise" npn bcf70 d2 SMD TRANSISTORs pnp npn darlington bc smd H7 marking code smd marking code transistors BSV52 SMD MARKING CODE vk
Text: SMDTransistors SOT-23 Case 350mW Proelectron Series—Confd « TYPE NO. DESCRIPTION BC858B BC858C BC859 BC859A BC859B BC859C BC860 BC860A BC860B BC860C PNP LOW NOISE PNP LOW NOISE PNP LOW NOISE PNP LOW NOISE PNP LOW NOISE PNP LOW NOISE PNP LOW NOISE PNP LOW NOISE
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OT-23
350mW
BC858B
BC558B
BC858C
BC558C
BC859
BC559
BC859A
BCS59A
BCB60
transistor smd npn ag
smd npn darlington
"low noise" npn
bcf70
d2 SMD TRANSISTORs pnp npn
darlington bc smd
H7 marking code smd
marking code transistors BSV52
SMD MARKING CODE vk
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d2 SMD TRANSISTORs pnp npn
Abstract: BCS59 2n2222a smd BC558B BC558C BC559 BC858B BC858C BC859 SMD marking bcw60
Text: SMDTransistors SOT-23 Case 350mW Proelectron Series—Confd « TYPE NO. DESCRIPTION BC858B BC858C BC859 BC859A BC859B BC859C BC860 BC860A BC860B BC860C PNP LOW NOISE PNP LOW NOISE PNP LOW NOISE PNP LOW NOISE PNP LOW NOISE PNP LOW NOISE PNP LOW NOISE PNP LOW NOISE
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OT-23
350mW
BC858B
BC558B
BC858C
BC558C
BC859
BC559
BC859A
BCS59A
d2 SMD TRANSISTORs pnp npn
BCS59
2n2222a smd
SMD marking bcw60
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2SA847
Abstract: 2SA847A knx-1 low noise preamplifier knx1
Text: MITSUBISHI SEMICONDUCTOR <SMALL-SIGNAL TRANSISTOR 2SA847A FOR LOW FREQUENCY LOW NOISE AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SA847A is a silicon PNP epitaxial type high voltage low frequency OUTLINE DRAWING *5 .6 M A X low noise transistor. It has low noise at super low frequency range,low pulse
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2SA847A
2SA847A
-120V
150MHz
t270Hz
270Hz
2SA847
knx-1
low noise preamplifier
knx1
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schematic circuit diagram adsl modem board
Abstract: schematic circuit adsl modem board adslu24
Text: a Dual High-Speed Low-Noise Op Amps AD8022 FEATURES Low-Noise Amplifiers Provide Low Noise and Low Distortion, Ideal for xDSL Modem Receiver +5 V to ؎12 V Voltage Supply Low-Power Consumption 4.0 mA/Amp Typ Supply Current Voltage Feedback Amplifiers Low Noise and Distortion
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AD8022
AD8022
images/AD8022
schematic circuit diagram adsl modem board
schematic circuit adsl modem board
adslu24
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schematic circuit adsl modem board
Abstract: No abstract text available
Text: a Dual High-Speed Low-Noise Op Amps AD8022 FEATURES Low-Noise Amplifiers Provide Low Noise and Low Distortion, Ideal for xDSL Modem Receiver +5 V to ؎12 V Voltage Supply Low-Power Consumption 4.0 mA/Amp Typ Supply Current Voltage Feedback Amplifiers Low Noise and Distortion
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AD8022
AD8022
pdf/20010521/11may2001/html/AD8022
schematic circuit adsl modem board
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schematic circuit diagram adsl modem board
Abstract: schematic circuit adsl modem board mtpr crest factor RS-453 AD8022
Text: a Dual High-Speed Low-Noise Op Amps AD8022 FEATURES Low-Noise Amplifiers Provide Low Noise and Low Distortion, Ideal for xDSL Modem Receiver +5 V to ؎12 V Voltage Supply Low-Power Consumption 4.0 mA/Amp Typ Supply Current Voltage Feedback Amplifiers Low Noise and Distortion
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AD8022
AD8022
schematic circuit diagram adsl modem board
schematic circuit adsl modem board
mtpr crest factor
RS-453
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schematic circuit diagram adsl modem board
Abstract: AWG2021 folded cascode current mirror op amp ADSL Transceiver AD8022 AD8002 AD8022AR AD8022AR-EVAL AD8022ARM AD9754
Text: a Dual High-Speed Low-Noise Op Amps AD8022 FEATURES Low-Noise Amplifiers Provide Low Noise and Low Distortion, Ideal for xDSL Modem Receiver +5 V to ؎12 V Voltage Supply Low-Power Consumption 4.0 mA/Amp Typ Supply Current Voltage Feedback Amplifiers Low Noise and Distortion
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AD8022
C3714
schematic circuit diagram adsl modem board
AWG2021
folded cascode current mirror op amp
ADSL Transceiver
AD8022
AD8002
AD8022AR
AD8022AR-EVAL
AD8022ARM
AD9754
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NTE234
Abstract: No abstract text available
Text: NTE234 Silicon PNP Transistor Low Noise, High Gain Amplifier Description: The NTE234 is a silicon PNP transistor in a TO92 type package designed especially for low noise preamplifier and small signal industrial amplifier applications. This device features low collector saturation voltage, tight beta control, and excellent low noise characteristics.
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NTE234
NTE234
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ZTX109
Abstract: low noise transistors bc109 BC214P 2N5086 2N5087 2N5209 2N5210 BC550P BC560P
Text: PNP LOW NOISE TAB LE6 - PNP SILICON PLANAR LOW NOISE TRANSISTORS The transistors in this table are characterised for low noise, low level amplification and are ideally suited for audio pre-amplifiers as well as universal applications. The devices are listed in order of decreasing collector/emitter breakdown voltage VCE0 ,
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BCY77P
BCY65EP
2N5086
30-15k
2N5209
2N5087
2N5210
ZTX531
ZTX109
low noise transistors
bc109
BC214P
2N5209
2N5210
BC550P
BC560P
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BCY59
Abstract: BCY65E BCY77 BCY79 ZT183 ZT184 ZT189 ZT83 ZT84 ZT89
Text: PNP LOW NOISE TABLE 6 - PNP SILICON PLANAR LOW NOISE TRANSISTORS The transistors shown in this table are characterised for low noise, low level amplification and are particularly suitable for audio pre-amplifiers as well as universal applications. The devices are listed in order of decreasing Breakdown Voltage VCE0 , decreasing Collector
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ZT189
BCY77
BCY65E
ZT183
BCY59
BCY71
BCY70
2N2605
2N2604
BCY59
BCY65E
BCY79
ZT184
ZT83
ZT84
ZT89
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A970
Abstract: A970 TRANSISTOR A970 GR transistor a970 Low-Frequency Low-Noise PNP transistor KTA970 kta970 transistor TRANSISTOR BL 100 kec kta LOW VOLTAGE LOW NOISE AMPLIFIER IC
Text: SILICON PNP TRANSISTOR EPITAXIAL PLANAR TYPE PCT PROCESS KTA 970 U nit in mm ( A P P L IC A TIONS ) 5.1 MAX. • Low Noise Audio Amplifier Applications. ( FEATURES ) KTA970 is a PNP low-frequency, low-noise tra n s is to r that is designed for low noise figure at the impedance of a low
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KTA970
-100M,
-120V
Pulse00
100//A
-100M
A970
A970 TRANSISTOR
A970 GR
transistor a970
Low-Frequency Low-Noise PNP transistor
kta970 transistor
TRANSISTOR BL 100
kec kta
LOW VOLTAGE LOW NOISE AMPLIFIER IC
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AN-104 national
Abstract: sine wave generator using LM358 marking A32A lm358 sine wave generator circuit LM358 circuit collection marking LM358
Text: LMV751 LMV751 Low Noise, Low Vos, Single Op Amp Literature Number: SNOS468D LMV751 Low Noise, Low Vos, Single Op Amp General Description Features The LMV751 is a high performance CMOS operational amplifier intended for applications requiring low noise and low
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LMV751
LMV751
SNOS468D
1000pF
OT23-5
AN-104 national
sine wave generator using LM358
marking A32A
lm358 sine wave generator circuit
LM358
circuit collection
marking LM358
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smd code marking TV sot23
Abstract: SMD MARKING CODE RIA marking code P1R smd code marking sot23 SMD transistors marking code 2.F CE MARKING SOT-23 sot-23 MARKING CODE N C smd transistors BCF70 marking p1r
Text: Low Noise SMD" Transistors Low Noise SMD Transistors Description Mechanical Data Philips Components low-noise transistors are optimized for operation on low level signals as required by audio and other amplifier circuits. All have guaranteed low-current
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OT-23
BC849B
BC849C
BC850B
BC850C
BC859A
BC859B
BC859C
BC860A
smd code marking TV sot23
SMD MARKING CODE RIA
marking code P1R
smd code marking sot23
SMD transistors marking code 2.F
CE MARKING SOT-23
sot-23 MARKING CODE N C
smd transistors
BCF70
marking p1r
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2sc33825
Abstract: 2SC3382 4DNF
Text: Ordering number:ENN1942A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1391/2SC3382 Low Noise AF Amp Applications Features Package Dimensions • Adoption of FBET process. · AF amp. · Low-noise use. unit:mm 2003B [2SA1391/2SC3382] 5.0 4.0 Noise Test Circuit
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ENN1942A
2SA1391/2SC3382
2003B
2SA1391/2SC3382]
2SA1391
2sc33825
2SC3382
4DNF
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2SC1310
Abstract: transistor 5104 db CC103 2cC103
Text: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SC1310 FOR LOW FREQUENCY LOW NOISE AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SC1310 is a silicon PNP epitaxial type transistor designed for low OUTLINE DRAWING 4.3MAX frequency low noise application.
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2SC1310
2SC1310
150mV
100mA,
270Hz
30kHz
transistor 5104 db
CC103
2cC103
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2SC3382
Abstract: 2SA1391
Text: Ordering number:EN1942A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1391/2SC3382 Low Noise AF Amp Applications Features Package Dimensions • Adoption of FBET process. · AF amp. · Low-noise use. unit:mm 2003A [2SA1391/2SC3382] Noise Test Circuit JEDEC : TO-92
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EN1942A
2SA1391/2SC3382
2SA1391/2SC3382]
SC-43
2SA1391
2SC3382
2SA1391
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2SA1316
Abstract: No abstract text available
Text: 2SA1316 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1316 For Low Noise Audio Amplifier Applications and Recommended for the First Stages of MC Head Amplifiers Unit: mm • Very low noise in the region of low signal source impedance equivalent input noise voltage: En = 0.6 nV/Hz1/2 (typ.)
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2SA1316
2SC3329
2SA1316
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2SA1316
Abstract: No abstract text available
Text: 2SA1316 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1316 For Low Noise Audio Amplifier Applications and Recommended for the First Stages of MC Head Amplifiers Unit: mm • Very low noise in the region of low signal source impedance equivalent input noise voltage: En = 0.6 nV/Hz1/2 (typ.)
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2SA1316
2SC3329
2SA1316
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2SA1316
Abstract: 2sa131 2SC3329 2SC332
Text: 2SA1316 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1316 For Low Noise Audio Amplifier Applications and Recommended for the First Stages of MC Head Amplifiers Unit: mm • Very low noise in the region of low signal source impedance equivalent input noise voltage: En = 0.6 nV/Hz1/2 (typ.)
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2SA1316
2SC3329
2SA1316
2sa131
2SC3329
2SC332
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ZT189
Abstract: No abstract text available
Text: PLESSEY SEdlCOND/DISCRETE ~TS DÉT| 7 2 2 0 5 3 3 7220533 PLESSEY SEMICOND/DISCRETE DDD4^2b 5 95D 0 4 9 2 6 I PN P LOW NOISE TABLE 6 - PNP SILICON PLANAR LOW NOISE TRANSISTORS The transistors shown in this table are characterised for low noise, low level amplification and are particularly
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BCY65E
BCY59
BCY58
BC109
ZT189
BCY77
ZT183
ZT184
BCY79
BCY71
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marking BJp
Abstract: BCX71J f 630 Bkp marking code BCX71H
Text: Philips Semiconductors Product specification PNP general purpose transistors BCX71 series FEATURES PINNING • Low current max. 100 mA PIN DESCRIPTION • Low voltage (max, 45 V) 1 base • Low noise. 2 emitter 3 collector APPLICATIONS • Low level, low noise, low frequency applications in
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BCX70
BCX71
BCX71G
BCX71H
BCX71J
BCX71K
marking BJp
f 630
Bkp marking code
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NTE16
Abstract: NTE17
Text: NTE16 NPN & NTE17 (PNP) Silicon Complementary Transistors Low Noise, General Purpose Amplifier Features: D Low Collector Saturation Voltage D Low Output Capacitance D Low Noise Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V
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NTE16
NTE17
NTE16
NTE17
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NTE17
Abstract: NTE16
Text: NTE16 NPN & NTE17 (PNP) Silicon Complementary Transistors Low Noise, General Purpose Amplifier Features: D Low Collector Saturation Voltage D Low Output Capacitance D Low Noise Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V
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NTE16
NTE17
NTE17
NTE16
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Untitled
Abstract: No abstract text available
Text: 5bE ]> • ^70570 DGQ7ÜQ1 234 HIZET B p|\|p |_QW NOISE ZETEX SEMICONDUCTORS TA B LE 6 - PNP SILICON PLA N AR LOW NOISE TRANSISTORS The transistors shown in this table are characterised for low noise, low level amplification and are particularly suitable for audio pre-amplifiers as well as universal applications.
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ZT189
BCY77
ZT182
BCY78
BCY58
BCY72
ZT180
ZT187
BC179
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