840-SL
Abstract: NE32984D U/25/20/TN26/15/850/NE32984D
Text: NEC ULTRA LOW NOISE PSEUDOMORPHIC HJ FET NE32984D NOISE FIGURE & ASSOCIATED FEATURES GAIN v« FRFOMFWrV Vos = 2 V, lo i a 10 IÎ1A • VERY LOW NOISE FIGURE: 0.40 d 8 Typical at 12 GHz • HIGH ASSOCIATED GAIN: 12.5 0 8 Typical at 12 GHz ai • La i 0.20 pm . W o • 200 nm
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NE32984D
NE329640
NE329640-S
NE329Ã
40-T1
NE32964D-SI
840-SL
840-SL
NE32984D
U/25/20/TN26/15/850/NE32984D
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NE70083
Abstract: 2SK353 DS 3107 NE700 2sk mesfet 1S121 2sk 353
Text: N E C / CALIFORNIA 1SE NEC D fa427414 O G O l b S l 1 T - 3 1-2 5 " LOW NOISE Ku-K BAND GaAs MESFET NE700 SERIES FEATURES DESCRIPTION AND APPLICATIONS • LOW C O S T The NE700 is a low cost GaAs FET featuring low noise figures and high associated gains thru 18 GHz.
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fa427414
NE700
NE70000
NE70083.
NE70083-4
NE70083
2SK353
DS 3107
2sk mesfet
1S121
2sk 353
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nec 2412
Abstract: NE24283A 2412 NEC
Text: N E C / C A L I F OR N I A S bE D bM2?mM 00QH2S2 5Û3 » N E C C T ^ |.2 £ NEC ULTRA LOW NOISE NE24283A PSEUDOMORPHIC HJ FET OUTLINE DIMENSIONS Units In mm FEATURES OUTLINE 83A IMlOS • VERY LOW NOISE FIGURE: 0.6 dB typical at 12 GHz • HIGH ASSOCIATED GAIN:
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00QH2S2
NE24283A
capabiliti38
nec 2412
2412 NEC
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upc4074
Abstract: No abstract text available
Text: NEC NEC Electronics Inc. D es crip tio n //P C 4 0 7 4 QUAD J-FET INPUT LOW-NOISE OPERATIONAL AM PLIFIER Pin C o n fig u ra tio n The J-FE T in p u t o p e ra tio n a l a m p lifie rs o f the/i/PC4074 are designed as lo w -n o ise versions o f th e /uPC4084.
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the/i/PC4074
/uPC4084
the/uPC4084.
upc4074
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PC4072
Abstract: c4072
Text: V f T C ¿/PC4072 DUAL J-FET INPUT LOW-NOISE o p e r a t i o n a l a m p lif ie r NEC Electronics Inc. Pin Configurations Description T he J-FE T in p u t o p e ra tio n a l a m p lifie rs o f the/L/PC4072 are designed as lo w -n o ise versions o f the //PC4082.
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/PC4072
the/L/PC4072
//PC4082.
the/vPC4072
PC4082.
yt/PC4072
//PC4072
PC4072
c4072
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2SK314
Abstract: 4511 gm JE 33 5551a tt 22
Text: NEC j m*Ti\rx A J u n c tio n Field E ffe c t T ra n s is to r 2SK314 m Silicon N-Channel Junction FET Audio Frequency Low Noise Amplifier Industrial Use Ü - E 1 /P A C K A G E DIM ENSIO NS ^ « /F E A T U R E S Unit : mm o ® iß « T " to NF = 1.0 dB TYP. (VDs = 10 V,Id = 5 mA,RG= 1.0 kQ,f=100 Hz)
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2SK314
2SK314
4511 gm
JE 33
5551a
tt 22
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PFA113A
Abstract: NEC 2705 opto PFA1AN PFA141B PFA122A PFA141A PFA141E ps7200 PFA112A PFA222A
Text: OPTICAL COUPLED MOS FET SELECTION GUIDE September 2000 [MEMO] 2 Selection Guide P11633EJAV0SG00 CAUTION Within this device there exits GaAs Gallium Arsenide material which is a harmful substance if ingested. Please do not under any circumstances break the
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P11633EJAV0SG00
PFA113A
NEC 2705 opto
PFA1AN
PFA141B
PFA122A
PFA141A
PFA141E
ps7200
PFA112A
PFA222A
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IC3208
Abstract: No abstract text available
Text: DATA SHEET_ NEC GaAs INTEGRATED CIRCUIT uPG105B-1 S-BAND LOW NOISE AMPLIFIER DESCRIPTION The ¿ iP G 1 0 5 B -1 GaAs Am plifier has a very low noise characteristics in the S-band. This device has amplifiers to achieve high linear gain.
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uPG105B-1
PG105B-1
IC3208
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817 CN
Abstract: No abstract text available
Text: DATA SHEET GaAs MES FET NE76118 L to S BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET DESCRIPTION N E76118 is a n-channel GaAs MES FET housed in MOLD package. PACKAGE DIMENSIONS in millimeters FEATURES • 2 . 1± 0.2 Low noise figure 1.25±0.1 NF = 0.8 dB TYP. at f = 2 GHz
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NE76118
E76118
NE76118-T1
NE76118-T2er
IR30-00-2
817 CN
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mobile phone basic block diagram
Abstract: PG2158T5K 2SC3357/NE85634 microwave Duplexer NE5510279A UPC8236 NE3517S03 UPG2156 NE662M04 SW SPDT
Text: RF AND MICROWAVE DEVICES SELECTION GUIDE − APPLICATION SYSTEM − October 2009 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .
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G0706
PX10020EJ41V0PF
mobile phone basic block diagram
PG2158T5K
2SC3357/NE85634
microwave Duplexer
NE5510279A
UPC8236
NE3517S03
UPG2156
NE662M04
SW SPDT
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IC3208
Abstract: P12315EJ2V0DS00
Text: DATA SHEET GaAs INTEGRATED CIRCUIT ¿iPG105B-1 S-BAND LOW NOISE AMPLIFIER DESCRIPTION The ¿tPG105B-1 GaAs Am plifier has a very low noise characteristics in the S-band. This device has 3 stages FET amplifiers to achieve high linear gain. This amplifier is ideal for microwave communication system and the
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uPG105B-1
tPG105B-1
/xPG105B-1
IC3208
P12315EJ2V0DS00
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D450 Nchannel
Abstract: C10535E NE76118 NE76118-T1 NE76118-T2 NEC 3536
Text: DATA DATA SHEET SHEET GaAs MES FET NE76118 L to S BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET DESCRIPTION PACKAGE DIMENSIONS NE76118 is a n-channel GaAs MES FET housed in MOLD package. in millimeters FEATURES 2.1±0.2 1.25±0.1 • Low noise figure PACKING STYLE
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NE76118
NE76118
NE76118-T1
NE76118-T2
D450 Nchannel
C10535E
NE76118-T1
NE76118-T2
NEC 3536
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NEC 3536
Abstract: No abstract text available
Text: DATA SHEET GaAs MES FET NE76118 L to S BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET DESCRIPTION NE76118 is a n-channel GaAs MES FET housed in MOLD package. PACKAGE DIMENSIONS in millimeters FEATURES • Low noise figure NF = 0.8 dB TYP. at f = 2 GHz •
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NE76118
NE76118
NE76118-T1
NE76118-T2
NEC 3536
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TC-2303
Abstract: NEC 3377 NE76184A transistor NEC D 582 transistor NEC D 587 NE76184A-SL NE76184A-T1 NE76184A-T1A p1085
Text: DATA SHEET GaAs MES FET NE76184A GENERAL PURPOSE FET N-CHANNEL GaAs MES FET DESCRIPTION NE76184A is a N-channel GaAs MES FET housed in ceramic package. The device is fabricated by ion implantation for improved RF and DC performance reliability and uniformity. Its
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NE76184A
NE76184A
NE76184A-SL
NE76184A-T1
NE76184A-T1A
TC-2303
NEC 3377
transistor NEC D 582
transistor NEC D 587
NE76184A-SL
NE76184A-T1
NE76184A-T1A
p1085
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Motorola transistor smd marking codes
Abstract: UAF3000 BAR64 spice model parameter PMBFJ620 spice model bf1107 spice model RF LNB C band chipset PIN diode SPICE model BAP50 BSS83 spice model MPF102 spice model 2SK163 spice model
Text: RF manual 11th edition Application and design manual for RF products December 2008 www.nxp.com 2008 NXP B.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract,
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circuit diagram of GSM based home automation system
Abstract: BF1118 MOBILE jammer GSM 1800 MHZ circuit diagram bgu7051 BLF578 CMMB antenna MRF6V2300N 300w power amplifier circuit diagram BF256B spice model maxim DVB
Text: RF Manual 14th edition Application and design manual for High Performance RF products May 2010 2010 NXP B.V. copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by
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Untitled
Abstract: No abstract text available
Text: DATA SHEET NEC O C M O S FET PS7522-1 A,-2A,PS7522L-1 A,-2A 6, 8-PIN DIP OCMOS FET 1-ch, 2-ch OCMOS FET DESCRIPTION T he P S 7522-1A , -2 A and P S 7522L-1A , -2A are solid state relays co n tain ing a G aA s LED on the light em ittin g side (input side) and M O S FETs on the ou tput side.
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PS7522-1
PS7522L-1
522-1A
7522L-1A
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2SK43 transistor
Abstract: smd transistor m29 sot343 UXA23465 Motorola transistor smd marking codes walkie-talkie transceiver diagram UXA23476 diode SMD WL sot23 BF862 AM LNA uaf3000 2SK163
Text: th 1 ed ition 10 th editio n t h 1 e d th i t i o n RF manual 10 edition 10 Application and design manual for RF products TH September 2007 www.nxp.com 2007 NXP B.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written
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Untitled
Abstract: No abstract text available
Text: DATA SHEET GaAs MES FET NE76000 C to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET FEATURES • CHIP DIMENSIONS Unit: //m Low noise figure NF = 1.6 dB TYP. at f = 12 GHz • High associated gain Ga = 9.0 dB TYP. at f = 12 GHz • Gate length: Lg = 0 .3 //m
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NE76000
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5B4 RECTIFIER
Abstract: CT829 CT-829
Text: PRELIMINARY PRODUCT INFORMATION MOS INTEGRATED CIRCUIT µ PD16907 6-CHANNEL DC-DC CONVERTER CONTROLER IC DESCRIPTION The µ PD16907 is a DC-DC converter controller IC with Power MOS FET in its synchronous rectifier step-down circuit and six output channels.
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PD16907
PD16907
5B4 RECTIFIER
CT829
CT-829
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uPC177
Abstract: uPC458 uPC844 uPC1094 9020 8-pin SOP pc494 uPC824 uPC454 uPC802 uPC451
Text: General Purpose Linear IC Operational Amplifier Part number Function*1 Communication/industry General use Single Dual Quad use µPC151 µPC741 µPC251 µPC1458 µPC354 Recommended power supply voltage*2 V ±7.5 to ±16 V–+2 to V+–0.5 ±3 to ±16 µPC454
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PC151
PC741
PC251
PC1458
PC354
PC454
PC815
PC816
X10679EJCV0SG00
1996P
uPC177
uPC458
uPC844
uPC1094
9020 8-pin SOP
pc494
uPC824
uPC454
uPC802
uPC451
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HA 12058
Abstract: 9971GI nec 2561-2 NEC Ga FET marking A NEC Ga FET marking Rf
Text: DATA SHEET GaAs MES FET NE76038 G ENERAL PURPOSE N-CHANNEL GaAs MES FET DESCRIPTION NE76038 is a N-channel GaAs MES FET housed in plastic package. The device is fabricated by ion implantation for im proved RF and DC performance reliability and uniform ity. Its excellent low noise and high associated gain make
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NE76038
NE76038
HA 12058
9971GI
nec 2561-2
NEC Ga FET marking A
NEC Ga FET marking Rf
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transistor nec D78
Abstract: D78 NEC NEC D73 d3055 J100 J150 NE76000 transistor d176
Text: DATA SHEET GaAs MES FET NE76000 C to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET FEATURES • CHIP DIMENSIONS Unit: Pm Low noise figure NF = 1.6 dB TYP. at f = 12 GHz High associated gain 450 57 Ga = 9.0 dB TYP. at f = 12 GHz DRAIN DRAIN VDS 5.0 V
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NE76000
transistor nec D78
D78 NEC
NEC D73
d3055
J100
J150
NE76000
transistor d176
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TC2260
Abstract: KU 506 transistor NEC D 809 F NE76083A low noise FET NEC U C band FET transistor s-parameters
Text: DATA SHEET GaAs MES FET NE76083A C to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET FEATURES • P A C K A G E D IM E N S IO N S Low noise figure Unit : mm NF = 1.6 dB TYP. at f = 12 GHz (NE76083A) NF = 2.4 dB MAX. at f = 12 GHz (NE76083A-2.4) • High associated gain
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NE76083A
NE76083A)
NE76083A-2
TC2260
KU 506 transistor
NEC D 809 F
NE76083A
low noise FET NEC U
C band FET transistor s-parameters
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