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    LOW LOSS FAST RECOVERY DUAL DIODES Search Results

    LOW LOSS FAST RECOVERY DUAL DIODES Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    NFMJMPC156R0G3D Murata Manufacturing Co Ltd Large Current 3 Terminals Low ESL Chip Multilayer Ceramic Capacitors (EMI Filter) for General Purpose Visit Murata Manufacturing Co Ltd
    NFM31PC276D0E3L Murata Manufacturing Co Ltd Large Current 3 Terminals Low ESL Chip Multilayer Ceramic Capacitors (EMI Filter) for General Purpose Visit Murata Manufacturing Co Ltd
    NFMJMPL226R0G5D Murata Manufacturing Co Ltd Large Current 3 Terminals Low ESL Chip Multilayer Ceramic Capacitors (EMI Filter) for General Purpose Visit Murata Manufacturing Co Ltd
    FO-LSDUALSCSM-003 Amphenol Cables on Demand Amphenol FO-LSDUALSCSM-003 SC-SC Duplex Single-Mode 9/125 Fiber Optic Patch Cable (OFN-LS Low Smoke) - 2 x SC Male to 2 x SC Male 3m Datasheet
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation

    LOW LOSS FAST RECOVERY DUAL DIODES Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: KCF16A60 17.7A/600V/trr: 50nsec FAST RECOVERY DIODE FEATURES ° Similar to TO-247AC Case ° Dual Diodes - Cathode Common o Ultra - Fast Recovery o Low Forward Voltage Drop ° Low Power Loss, High Efficiency ° High Surge Capability « 100 Volts thru 600 Volts Types Available


    OCR Scan     		KCF16A60 A/600V/trr: 50nsec O-247AC btlS123 00052b? 0QG22bfi PDF

    KCF16A50

    Abstract: No abstract text available
    Text: KCF16A50 17.7A/500V/trr : 55nsec FAST RECOVERY DIODE FEATURES o Similar to TO - 247AC Case o Dual Diodes- Cathode Common ° Ultra-Fast Recovery o Low Forward Voltage Drop ° Low Power Loss, High Efficiency ° High Surge Capability ° 100 Volts thru 600 Volts Types Available


    OCR Scan     		A/500V/trr 55nsec KCF16A50 247AC bbl5123 KCF16A50 PDF

    em-18

    Abstract: tc951 KCF16A50 ultra fast recovery diode 500V
    Text: FAST RECOVERY DIODE KCF16A50 i7.7 A /soov/trr :55nsec FEATURES o Similar to TO-247AC Case ° Dual Diodes- Cathode Common o Ultra - Fast Recovery o Low Forward Voltage Drop o Low Power Loss, High Efficiency o High Surge Capability » 100 Volts thru 600 Volts Types Available


    OCR Scan     		A/500V/trr 55nsec KCF16A50 O-247AC bbl51S3 D22bb em-18 tc951 KCF16A50 ultra fast recovery diode 500V PDF

    22bu

    Abstract: ultra low forward voltage diode KCF16A60
    Text: KCF16A60 17.7A/600V/trr : 50nsec FAST RECOVERY DIODE FEATUR ES ° Similar to TO-247AC Case o Dual Diodes - Cathode Common o Ultra - Fast Recovery o Low Forward Voltage Drop ° Low Power Loss, High Efficiency ° High Surge Capability « 100 Volts thru 600 Volts Types Available


    OCR Scan     		A/600V/trr 50nsec KCF16A60 O-247ACCase bbl5123 22bu ultra low forward voltage diode KCF16A60 PDF

    MA3U649

    Abstract: IR 647
    Text: Fast Recovery Diodes FRD MA3U649 Silicon planar type (cathode common) Unit : mm 6.5±0.1 5.3±0.1 4.35±0.1 1.0±0.2 2.5±0.1 • Small U-type package for surface mounting • Low-loss type with fast reverse recovery time trr • Cathode common dual type


    Original     		MA3U649 MA3U649 IR 647 PDF

    Untitled

    Abstract: No abstract text available
    Text: Fast Recovery Diodes FRD MA3U649 Silicon planar type (cathode common) Unit: mm 0.8 max. 2.5±0.1 • Small U-type package for surface mounting • Low-loss type with fast reverse recovery time trr • Cathode common dual type 0.5±0.1 1.8±0.1 7.3±0.1 • Features


    Original     		MA3U649 PDF

    Diode 400V 20A

    Abstract: power Diode 400V 20A power Diode 200V 10A diode 300v Rectifier Diode 20A EIAJ SC67 diode 300v 20a PA905C6 LOW LOSS SUPER HIGH SPEED RECTIFIER low power loss rectifier
    Text: Low-loss Fast Recovery Diodes LLD Dual Device Type ESAB92-02 ESAC92-02 ESAC93-02 ESAC93M-02R ESAC93M-03R ESAD92-02 ESAD92-03 ESAD92M-02R ESAD92M-03R KP923C2 KS923C2 MS906C2 MS906C3 PA905C4 PA905C6 PG905C4 TP901C2 Features LOW LOSS SUPER HIGH SPEED RECTIFIER


    Original     		ESAB92-02 ESAC92-02 ESAC93-02 ESAC93M-02R ESAC93M-03R ESAD92-02 ESAD92-03 ESAD92M-02R ESAD92M-03R KP923C2 Diode 400V 20A power Diode 400V 20A power Diode 200V 10A diode 300v Rectifier Diode 20A EIAJ SC67 diode 300v 20a PA905C6 LOW LOSS SUPER HIGH SPEED RECTIFIER low power loss rectifier PDF

    SC-67

    Abstract: LOW LOSS SUPER HIGH SPEED RECTIFIER Diode 400V 20A power Diode 200V 10A fast recovery diode 400v 5A full wave rectifier diodes diode 300v EIAJ SC67 LOW LOSS SUPER HIGH SPEED DIODE 300v 5a ESAD92-03
    Text: Low-loss Fast Recovery Diodes LLD Dual Device Type ESAB92-02 ESAC92-02 ESAC93-02 ESAC93M-02R ESAC93M-03R ESAD92-02 ESAD92-03 ESAD92M-02R ESAD92M-03R KP923C2 KS923C2 MS906C2 MS906C3 PA905C4 PA905C6 PG905C4 TP901C2 Features LOW LOSS SUPER HIGH SPEED RECTIFIER


    Original     		ESAB92-02 ESAC92-02 ESAC93-02 ESAC93M-02R ESAC93M-03R ESAD92-02 ESAD92-03 ESAD92M-02R ESAD92M-03R KP923C2 SC-67 LOW LOSS SUPER HIGH SPEED RECTIFIER Diode 400V 20A power Diode 200V 10A fast recovery diode 400v 5A full wave rectifier diodes diode 300v EIAJ SC67 LOW LOSS SUPER HIGH SPEED DIODE 300v 5a ESAD92-03 PDF

    Untitled

    Abstract: No abstract text available
    Text: MA111 Fast Recovery Diodes FRD MA3U649 Silicon planer type (cathode common) Unit : mm For high-frequency rectification 6.5±0.1 5.3±0.1 4.35±0.1 • Features 2.3±0.1 ● Cathode common dual type 1.0±0.1 0.1±0.05 0.93±0.1 1.0±0.2 Low-loss type with fast reverse recovery time trr


    Original     		MA111 MA3U649 10ms/cycle PDF

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification Rectifier diode ultrafast, low switching loss FEATURES BYC10-600CT SYMBOL • Dual diode • Extremely fast switching • Low reverse recovery current • Low thermal resistance • Reduces switching losses in associated MOSFET


    Original     		BYC10-600CT O220AB) BYC10-600CT PDF

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification Rectifier diode ultrafast, low switching loss FEATURES BYC10-600CT SYMBOL • Dual diode • Extremely fast switching • Low reverse recovery current • Low thermal resistance • Reduces switching losses in associated MOSFET


    Original     		BYC10-600CT BYC10-600CT O220AB) PDF

    fast recovery diode 54

    Abstract: BYC10-600CT BYC5-600 BYV29
    Text: Philips Semiconductors Product specification Rectifier diode ultrafast, low switching loss FEATURES BYC10-600CT SYMBOL • Dual diode • Extremely fast switching • Low reverse recovery current • Low thermal resistance • Reduces switching losses in associated MOSFET


    Original     		BYC10-600CT O220AB) BYC10-600CT fast recovery diode 54 BYC5-600 BYV29 PDF

    inverter welding

    Abstract: diode 10e LOW LOSS FAST RECOVERY DUAL DIODES FRD100CA100 100BA M6 marking diode DKR200AA60
    Text: DIODE MODULE（F.R.D.） FRD/FDS100BA60 UL;E76102 （M） FRD （FDS） 100BA is a high speed fast recovery dual diode module designed for high power switching application. FRD（ FDS）100BA is suitable for high frequency application requiring low loss and high speed control.


    Original     		FRD/FDS100BA60 E76102 100BA trr100ns 30MAX 26MAX AV100Aeach Tj125VR50VPulse Width300sDuty2 inverter welding diode 10e LOW LOSS FAST RECOVERY DUAL DIODES FRD100CA100 M6 marking diode DKR200AA60 PDF

    TO-220FN

    Abstract: RF diodes TO220FN 10na RF2001T2D RF1001T2D common anode fast
    Text: RF 1series Diodes Fast recovery Diodes Silicon Epitaxial Planar RF 1 series zExternal dimensions (Unit : mm) zApplications High frequency rectification CPD 5.5 1.5 2.3 0.5 5.6 5.5 zFeatures 1) Ultra low VF very fast recovery 2) Fast recovery 3) Low switching loss


    Original     		O-220FN, O-220FN Fa301B2S RF501B2S RF601B2D RF601T2D RF1001T2D RF1601T2D RF2001T2D TO-220FN RF diodes TO220FN 10na common anode fast PDF

    RF071M2S

    Abstract: RF1001T2D RF101L2S RF1601T2D RF2001T2D RF301B2S RF501B2S RF601B2D RF601T2D TO-220FN
    Text: RF 1series Diodes Fast recovery Diodes Silicon Epitaxial Planar RF 1 series zExternal dimensions (Unit : mm) zApplications High frequency rectification CPD 5.5 1.5 2.3 0.5 5.6 5.5 zFeatures 1) Ultra low VF very fast recovery 2) Fast recovery 3) Low switching loss


    Original     		O-220FN, O-220FN RF071M2S RF1001T2D RF101L2S RF1601T2D RF2001T2D RF301B2S RF501B2S RF601B2D RF601T2D TO-220FN PDF

    D-PACK

    Abstract: RF073M2S RF1003T2D RF103L2S RF303B2S RF503B2S RF603B2D RF603T2D TO-220FN Reverse voltage repetitive peak VRM 60 V application notes frd
    Text: RF 3series Diodes Fast recovery Rectifier Diodes Silicon Epitaxial Planar RF 3 series zExternal dimensions (Unit : mm) zApplications High frequency rectification CPD 5.5 1.5 2.3 0.5 5.6 5.5 zFeatures 1) Very fast recovery 2) Low VF 3) Low switching loss


    Original     		O-220FN, O-220FN D-PACK RF073M2S RF1003T2D RF103L2S RF303B2S RF503B2S RF603B2D RF603T2D TO-220FN Reverse voltage repetitive peak VRM 60 V application notes frd PDF

    DFM200XXM65-F000

    Abstract: 6500V
    Text: DFM200XXM65-F000 Fast Recovery Dual Diode Module DS5972-1 October 2010 LN27669 FEATURES KEY PARAMETERS • VRRM VF IF IFM Low Reverse Recovery Charge  High Switching Speed  Low Forward Volt Drop  Isolated AlSiC Base with AlN Substrates  Dual Diodes can be paralleled for 400A Rating


    Original     		DFM200XXM65-F000 DS5972-1 LN27669) DFM200XXM65-F000 6500V PDF

    Untitled

    Abstract: No abstract text available
    Text: DFM200XXM65-F000 Fast Recovery Dual Diode Module DS5972-1 October 2010 LN27669 FEATURES KEY PARAMETERS • VRRM VF IF IFM Low Reverse Recovery Charge  High Switching Speed  Low Forward Volt Drop  Isolated AlSiC Base with AlN Substrates  Dual Diodes can be paralleled for 400A Rating


    Original     		DFM200XXM65-F000 DS5972-1 LN27669) PDF

    MBB100A6

    Abstract: MBB50A6 MBB75A6 MBM100A6 MBM150A6 MBM200A6 MBM300A6 MBM50A6 MBM75A6 MBN200A6
    Text: HITACHI 22 2.6 IGBT Module Range with Soft and Fast SFD Free-Wheeling Diodes • High speed . small recovery time, tr • Low loss . small reverse-peak current, Irp • Low noise . small rate of charge of recovery current, di/dt In order to maintain switching losses to minimal,


    OCR Scan     		MBM75A6 MBM100A6 MBM150A6 MBM200A6 MBM300A6 MBB50A6 MBB75A6 MBB100A6 MBN200F12 MBN300F12 MBB100A6 MBB50A6 MBM150A6 MBM200A6 MBM300A6 MBM50A6 MBM75A6 MBN200A6 PDF

    Untitled

    Abstract: No abstract text available
    Text: DUAL DIODE MODULE Spec.No.SR2-SP-08004 R5 MDM1200E17D FEATURES ∗ Low noise due to ultra soft fast recovery diode. ∗ High reliability, high durability diodes. ∗ Isolated heat sink terminal to base . o ABSOLUTE MAXIMUM RATINGS (Tc=25 C ) Item Repetitive Peak Reverse Voltage


    Original     		SR2-SP-08004 MDM1200E17D PDF

    ic 7400

    Abstract: MBB100A6 MBB50A6 MBB75A6 MBM100A6 MBM150A6 MBM200A6 MBM300A6 MBM50A6 MBM75A6
    Text: HITACHI 22 2.6 IGBT Module Range with Soft and Fast SFD Free-Wheeling Diodes In order to maintain switching losses to minimal, improving Free Wheeling Diodes, (FWD), is essential and Hitachi's version of this is the Soft and Fast Recovery (SFD) Free Wheeling Diode.


    OCR Scan     		MBM75A6 MBM100A6 MBM150A6 MBM200A6 MBM300A6 MBB50A6 MBB75A6 MBB100A6 MBN200F12 MBN300F12 ic 7400 MBB100A6 MBB75A6 MBM100A6 MBM150A6 MBM200A6 MBM300A6 MBM50A6 MBM75A6 PDF

    CI 7400

    Abstract: MBM150A6 MBM150F12 MBM300A6 MBB100A6 MBB50A6 MBB75A6 MBM100A6 MBM200A6 MBM50A6
    Text: HITACHI/ OP TO ELECT RONI CS blE J> MM'ibeOS D D 1 3 7 7 b 134 • HITM HITACHI 22 2.6 IGBT Module Range with Soft and Fast (SFD) Free-Wheeling Diodes '- F 5 R '3 I • High speed . small recovery time, tr • Low loss . small reverse-peak current,


    OCR Scan     		DD1377b MBM75A6 MBM100A6 MBM150A6 MBM200A6 MBM300A6 MBB50A6 MBB75A6 MBB100A6 MBN200F12 CI 7400 MBM150A6 MBM150F12 MBM300A6 MBB100A6 MBB75A6 MBM100A6 MBM200A6 MBM50A6 PDF

    Untitled

    Abstract: No abstract text available
    Text: DUAL DIODE MODULE Spec.No.SR2-SP-08004 R4 MDM1200E17D OUTLINE DRAWING Unit in mm FEATURES ∗ Low noise due to ultra soft fast recovery diode. ∗ High reliability, high durability diodes. ∗ Isolated heat sink terminal to base . CIRCUIT DIAGRAM C(K) C(K)


    Original     		SR2-SP-08004 MDM1200E17D PDF

    DFM1200XXM45-TS000

    Abstract: No abstract text available
    Text: DFM1200XXM45-TS000 Fast Recovery Diode Module DS6130-1 October 2013 LN31069 FEATURES KEY PARAMETERS • VRRM VF IF IFM Low Reverse Recovery Charge  High Switching Speed  Low Forward Volt Drop  Isolated AlSiC Base With AlN Substrates  Dual Diodes Can Be Paralleled For 2400A Rating


    Original     		DFM1200XXM45-TS000 DS6130-1 LN31069) DFM1200XXM45-TS000 PDF