127kV
Abstract: No abstract text available
Text: Schottky Barrier Diode Datasheet RB095T-60 Application Dimensions Unit : mm Structure Switching power supply Features (1) (2) (3) 1) Cathode common type. (TO-220) 6 2) Low IR 3) High reliability Construction Silicon epitaxial planar ROHM : TO220FN
|
Original
|
PDF
|
RB095T-60
O-220)
O220FN
60Hz/1cyc)
R1102A
127kV
|
Untitled
Abstract: No abstract text available
Text: Schottky Barrier Diode RBQ30T45A Datasheet lDimensions Unit : mm lApplication lStructure General rectification 4.5±0.3 0.1 2.8±0.2 0.1 10.0±0.3 0.1 15.0±0.4 0.2 8.0 8.0±0.2 12.0±0.2 3) High reliability 5.0±0.2 1 Anode
|
Original
|
PDF
|
RBQ30T45A
O220FN
R1102A
|
Untitled
Abstract: No abstract text available
Text: Schottky Barrier Diode Datasheet RB088T150 External dimensions Unit : mm Application Structure Switching power supply (2) 4.5±0.3 0.1 2.8±0.2 0.1 10.0±0.3 0.1 Features 1) Cathode common dual type (1) 3) High reliability
|
Original
|
PDF
|
RB088T150
AEC-Q101
O220FN
R1102A
|
Untitled
Abstract: No abstract text available
Text: FX30KMJ-06 High-Speed Switching Use Pch Power MOS FET REJ03G1446-0200 Previous: MEJ02G0276-0101 Rev.2.00 Aug 07, 2006 Features • • • • • • Drive voltage : 4 V VDSS : –60 V rDS(ON) (max) : 54 mΩ ID : –30 A Integrated Fast Recovery Diode (TYP.) : 55 ns
|
Original
|
PDF
|
FX30KMJ-06
REJ03G1446-0200
MEJ02G0276-0101)
PRSS0003AB-A
O-220FN)
|
Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
|
Original
|
PDF
|
do-900
Unit2607
|
Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
|
Original
|
PDF
|
|
T220AB
Abstract: PRSS0003AA-A PRSS0003AA-B PRSS0004AA-A PRSS0004AB-A PRSS0004AD-A PRSS0003AB-A TO-220FN
Text: Magazine code T0-220S Magazine material Package name Renesas code Previous code PVC TO-220 PRSS0004AA-A T220AB Polyvinyl chloride TO-220F PRSS0003AA-A T220F TO-220F (2) PRSS0003AA-B T220F(2) TO-220FN PRSS0003AB-A T220FN TO-220C PRSS0004AD-A T220C TO-220S
|
Original
|
PDF
|
T0-220S
O-220
PRSS0004AA-A
T220AB
O-220F
PRSS0003AA-A
T220F
PRSS0003AA-B
T220F
T220AB
PRSS0003AA-A
PRSS0003AA-B
PRSS0004AA-A
PRSS0004AB-A
PRSS0004AD-A
PRSS0003AB-A
TO-220FN
|
RJK6014DPP
Abstract: RJK6014DPP-00-T2
Text: RJK6014DPP Silicon N Channel MOS FET High Speed Power Switching REJ03G1531-0100 Rev.1.00 Apr 17, 2007 Features • Low on-resistance • Low leakage current • High speed switching Outline RENESAS Package code: PRSS0003AB-A Package name: TO-220FN D 1. Gate
|
Original
|
PDF
|
RJK6014DPP
REJ03G1531-0100
PRSS0003AB-A
O-220FN)
RJK6014DPP
RJK6014DPP-00-T2
|
RJK5012DPP
Abstract: RJK5012DPP-00-T2
Text: RJK5012DPP Silicon N Channel MOS FET High Speed Power Switching REJ03G1545-0100 Rev.1.00 May 10, 2007 Features • Low on-resistance • Low leakage current • High speed switching Outline RENESAS Package code: PRSS0003AB-A Package name: TO-220FN D 1. Gate
|
Original
|
PDF
|
RJK5012DPP
REJ03G1545-0100
PRSS0003AB-A
O-220FN)
RJK5012DPP
RJK5012DPP-00-T2
|
RSD130P10
Abstract: rsd220n06 RDR005N25 RP1E090 RSD130P R6015 RCD040N25 rcd080n25 RSD050N10 R5207AND
Text: 2010 ѻકⳂᔩ Discrete Semiconductors MOSFET MOSFET ᦤկ㛑ᑨ⫼Ѣᑓ⊯乚ඳⱘPower MOSFETˈҢ⫼Ѣ֓ᨎ䆒ⱘǃ 䞛⫼њ㊒ᆚᎹᑣⱘ䍙Ԣᇐ䗮⬉䰏䚼ӊˈࠄ⫼Ѣᓔ݇⬉⑤ⱘǃ催ᬜ⥛ 㗤催य़䚼ӊˈϔᑨܼׅDŽ 01 MOSFET Contents
|
Original
|
PDF
|
RUM002N02
RZM002P02
RUE002N02
RZE002P02
RUM002N05
RUE002N05
RZF013P01
RZL025P01
RZR020P01
RW1A013ZP
RSD130P10
rsd220n06
RDR005N25
RP1E090
RSD130P
R6015
RCD040N25
rcd080n25
RSD050N10
R5207AND
|
FS50KMJ-3
Abstract: No abstract text available
Text: FS50KMJ-3 High-Speed Switching Use Nch Power MOS FET REJ03G1421-0300 Rev.3.00 Nov 21, 2006 Features • • • • • • Drive voltage : 4 V VDSS : 150 V rDS ON (max) : 30 mΩ ID : 50 A Integrated Fast Recovery Diode (TYP.) : 125 ns Viso : 2000 A Outline
|
Original
|
PDF
|
FS50KMJ-3
REJ03G1421-0300
PRSS0003AB-A
O-220FN)
FS50KMJ-3
|
Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
|
Original
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
|
Original
|
PDF
|
do-900
Unit2607
|
FS50KM-2
Abstract: No abstract text available
Text: FS50KM-2 High-Speed Switching Use Nch Power MOS FET REJ03G1418-0200 Previous: MEJ02G0103-0101 Rev.2.00 Aug 07, 2006 Features • • • • • • Drive voltage : 10 V VDSS : 100 V rDS(ON) (max) : 55 mΩ ID : 50 A Integrated Fast Recovery Diode (TYP.) : 105 ns
|
Original
|
PDF
|
FS50KM-2
REJ03G1418-0200
MEJ02G0103-0101)
PRSS0003AB-A
O-220FN)
FS50KM-2
|
|
|
Untitled
Abstract: No abstract text available
Text: MITSUBISHI Neh POWER MOSFET FS10KM-03 HIGH-SPEED SWITCHING USE FS10KM-03 OUTLINE DRAWING Dimensions in mm 10 ± 0.3 2 .8 1 0 .2 10V DRIVE V d s s .3 0V rDS ON (MAX). 95m i2
|
OCR Scan
|
PDF
|
FS10KM-03
O-220FN
|
B1470
Abstract: FS10KM-5 FS10KM5 K775 MAX240 30hm marking mitsubishi st Z3J MITSUBISHI MOSFET FS
Text: MITSUBISHI Neh POWER MOSFET FS10KM-5 HIGH-SPEED SWITCHING USE FS10KM-5 OUTLINE DRAWING Dimensions in mm 10 ± 0 .3 2.8 ±0.2 4» • V d s s . -2 5 0 V • rDS ON (MAX) . 0.52Q
|
OCR Scan
|
PDF
|
FS10KM-5
O-220FN
T0-220S,
MAX240Â
MAX60S
O-220,
O-220FN,
O-220C,
O-220S
B1470
FS10KM-5
FS10KM5
K775
MAX240
30hm
marking mitsubishi
st Z3J
MITSUBISHI MOSFET FS
|
FS3KM18A
Abstract: FS3KM-18A FS3KM18 71Q1
Text: MITSUBISHI Neh POWER MOSFET FS3KM-18A HIGH-SPEED SWITCHING USE FS3KM-18A OUTLINE DRAWING Dimensions in mm 10 ± 0 .3 V d s s .900V rDS ON (MAX) .4.0Í2
|
OCR Scan
|
PDF
|
FS3KM-18A
O-22QFN
71Q-123
FS3KM18A
FS3KM-18A
FS3KM18
71Q1
|
FS12UM-5
Abstract: FS12KM MARKING CODE mosfet FS16UM5 FS20KM-6 FS12KM-5 FS20UM-5 FS10UM-5 FS16KM-5 FS10KM-5
Text: K O N f llO r Powerex, Inc., 200 Hlllls Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 S h o r t FO D TI D & t3 Selector Guide Discrete MOSFET - Medium Voitage FS Series MOSFETs (250 ~ 450V) Electrical Characteristics Maximum Ratings, Tc = 25°C
|
OCR Scan
|
PDF
|
O-220
O-220S
O-220FN
FS10UM-5
FS10VS-5
72R4L
FS12UM-5
FS12KM
MARKING CODE mosfet
FS16UM5
FS20KM-6
FS12KM-5
FS20UM-5
FS16KM-5
FS10KM-5
|
78MI2
Abstract: FS10KM-06
Text: MITSUBISHI Neh POWER MOSFET F S 10K M -06 HIGH-SPEED SWITCHING USE FS10KM-06 OUTLINE DRAWING Dimensions in mm 10 ± 0.3 2 .8 1 0 .2 10V DRIVE V d s s .60V rDS ON (M 8 m i i
|
OCR Scan
|
PDF
|
FS10KM-06
78mi2
O-22QFN
57KH23
78MI2
FS10KM-06
|
FS5KM-10
Abstract: mosfet 500V 5A
Text: MITSUBISHI Neh POWER MOSFET FS5KM-10 HIGH-SPEED SWITCHING USE OUTLINE DRAWING Dimensions in mm 10 ± 0.3 2.8 ± 0.2 1.1 ± 0.2 0.75 ±0.15 —O s ! \ 2 3 \ ' 2 .6 1 0.2 / 11 0.75 ±0.15 q GATE w DRAIN e SOURCE V d s s .5 0 0 V
|
OCR Scan
|
PDF
|
FS5KM-10
O-22QFN
FS5KM-10
mosfet 500V 5A
|
2SK2713
Abstract: No abstract text available
Text: Transistors Switching 450V, 5A 2SK2713 • Features •E x te rn a l dim ensions (Units: mm) 1 ) Low on-resistance. 2) High-speed switching. 3) W ide SOA (safe operating area). 4) G ate-so urce v o lta g e g u ara ntee d at Vgss = + 30V . 5) Easily designed drive circuits.
|
OCR Scan
|
PDF
|
2SK2713
O-22DFN
2SK2713
|
2SK2294
Abstract: 481J1
Text: Transistors Switching 800V, 3A 2SK2294 •F e a tu re s ^External dim ensions (Units: mm) 1 ) Low on-resistance. 2) High-speed switching. 3) W ide SOA (safe operating area). 4) G ate-so urce v o lta g e g u ara ntee d at V gss = ± 3 0 V . 5 ) Easi ly designed d rive circu its.
|
OCR Scan
|
PDF
|
2SK2294
O-22QFN
2SK2294
481J1
|
K775
Abstract: B1470 FS20UM-5 sk 3005 FS20UM MAX240 mitsubishi marking diode ct 2405
Text: MITSUBISHI Neh POWER MOSFET FS20UM-5 HIGH-SPEED SWITCHING USE OUTLINE DRAWING FS20UM-5 Dimensions in mm 4.5 1.3 0.5 2.6 ffi o@ © © GATE © DRAIN © SOURCE ® DRAIN • Vd s s •2 5 0 V . • rDS ON (MAX) 0 . 1 9 Í2 • I D .
|
OCR Scan
|
PDF
|
FS20UM-5
O-220
T0-220S,
MAX240Â
MAX60S
O-220,
O-220FN,
O-220C,
O-220S
K775
B1470
FS20UM-5
sk 3005
FS20UM
MAX240
mitsubishi marking
diode ct 2405
|
FS10KM-10
Abstract: 710a
Text: MITSUBISHI Neh POWER MOSFET FS10KM-10 HIGH-SPEED SWITCHING USE FS10KM-10 O UTLINE DRAW ING Dimensions in mm 10 ± 0.3 2.8 ± 0.2 « r Vd s s . 500V rDS ON (MAX) .0.90Í2
|
OCR Scan
|
PDF
|
FS10KM-10
O-220FN
571Q1
FS10KM-10
710a
|
