Untitled
Abstract: No abstract text available
Text: V2520SM/V2520TO BOWEI Ultra Low phase noise VCO with built-in buffer amplifier BOWEI INTEGRATED CIRCUITS CO.,LTD. Typical Performance Frequency MHz Frequency vs Tuning Voltage Features ●Built-in buffer amplifier low frequency pulling low phase noise ●Flexible tuning design,custom frequency range
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Abstract: No abstract text available
Text: V1900SM/V1900TO BOWEI Ultra Low phase noise VCO with built-in buffer amplifier BOWEI INTEGRATED CIRCUITS CO.,LTD. Typical Performance Frequency MHz Frequency vs Tuning Voltage Features ●Built-in buffer amplifier low frequency pulling low phase noise ●Flexible tuning design,custom frequency range
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Abstract: No abstract text available
Text: V3300SM/V3300TO BOWEI Ultra Low phase noise VCO with built-in buffer amplifier BOWEI INTEGRATED CIRCUITS CO.,LTD. Typical Performance Frequency MHz Frequency vs Tuning Voltage Features ●Built-in buffer amplifier low frequency pulling low phase noise ●Flexible tuning design,custom frequency range
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Untitled
Abstract: No abstract text available
Text: V620SM/V620TO BOWEI Ultra Low phase noise VCO with built-in buffer amplifier BOWEI INTEGRATED CIRCUITS CO.,LTD. Typical Performance Frequency vs Tuning Voltage Frequency MHz Features ●Built-in buffer amplifier low frequency pulling low phase noise ●Flexible tuning design,custom frequency range
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Abstract: No abstract text available
Text: V320SM/V320TO BOWEI Ultra Low phase noise VCO with built-in buffer amplifier BOWEI INTEGRATED CIRCUITS CO.,LTD. Typical Performance Frequency vs Tuning Voltage Frequency MHz Features ●Built-in buffer amplifier low frequency pulling low phase noise ●Flexible tuning design,custom frequency range
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Abstract: No abstract text available
Text: V1520SM/V1520TO BOWEI Ultra Low phase noise VCO with built-in buffer amplifier BOWEI INTEGRATED CIRCUITS CO.,LTD. Typical Performance Frequency vs Tuning Voltage Frequency MHz 1800 Features ●Built-in buffer amplifier low frequency pulling low phase noise
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Text: V2970SM/V2970TO BOWEI Ultra Low phase noise VCO with built-in buffer amplifier BOWEI INTEGRATED CIRCUITS CO.,LTD. Typical Performance Frequency MHz Frequency vs Tuning Voltage Features ●Built-in buffer amplifier low frequency pulling ●Ultra low phase noise
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Text: V925SM/V925TO BOWEI Ultra Low phase noise VCO with built-in buffer amplifier BOWEI INTEGRATED CIRCUITS CO.,LTD. Typical Performance Frequency vs Tuning Voltage Frequency MHz 1200 Features ●Built-in buffer amplifier low frequency pulling low phase noise
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ta 306
Abstract: 2SC1199 TA306
Text: 2SC1199 SILICON NPN EPITAXIAL PLANAR TYPE Unit in mm HIGH FREQUENCY WIDE BAND AMPLIFIER APPLICATIONS. 09.39MAK HIGH FREQUENCY LOW NOISE AMPLIFIER APPLICATIONS. .08 .4 5MAX . tzrzrn FEATURES: . Low Noise for High and Low Frequency : N F = 4 .O d B M a x .
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2SC1199
39MAK
200MHz
10kHz
-10mA,
-30mA,
ta 306
2SC1199
TA306
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AN6410
Abstract: 2SC828 panasonic 2SC828 SIP009-P-0000 Low frequency amplifier voltage stabilizer 15 amp voltage stabilizer circuit 220 v
Text: Panasonic Mobile Communication IC A N 6410 Low Frequency Amplifier for Transmission Modulation Circuit • Overview Unit I mm The AN6410 is an integrated circuit designed for low frequency amplifier for transmission. It consists of three low frequency amplifiers and a voltage stabilizer.
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AN6410
AN6410
SIP009-P-0000)
b132fl52
0D13210
2SC828
2SC828
panasonic 2SC828
SIP009-P-0000
Low frequency amplifier
voltage stabilizer 15 amp
voltage stabilizer circuit 220 v
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voltage stabilizer 15 amp
Abstract: voltage stabilizer, circuit diagram 2SC828 R 2SC828 AN6410 SIP009-P-0000 2SC828 O
Text: Panasonic Mobile Communication IC A N 6410 Low Frequency Amplifier for Transmission Modulation Circuit • Overview Unit I mm The AN6410 is an integrated circuit designed for low frequency amplifier for transmission. It consists of three low frequency amplifiers and a voltage stabilizer.
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AN6410
AN6410
SIP009-P-0000)
b132fl52
0D13210
2SC828
voltage stabilizer 15 amp
voltage stabilizer, circuit diagram
2SC828 R
2SC828
SIP009-P-0000
2SC828 O
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2SA60
Abstract: 2SA608N 2SC536N 2SC536 TA-100055
Text: Ordering number : ENN6324A 2SA608N / 2SC536N PNP / NPN Epitaxial Planar Silicon Transistors 2SA608N / 2SC536N Low-Frequency General-Purpose Amplifier Applications Applications • Package Dimensions Capable of being used in the low frequency to high frequency range.
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ENN6324A
2SA608N
2SC536N
2SC536N]
2SA60
2SC536N
2SC536
TA-100055
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Untitled
Abstract: No abstract text available
Text: DATA SHEET DARLINGTON TRASISTOR 2SB1465 PNP SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SB1465 is a mold power darlington transistor developed for low-frequency power amplifier and low-speed
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2SB1465
2SB1465
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trasistor
Abstract: 2SB1465 NEC RELAY nec 5
Text: DATA SHEET DARLINGTON TRASISTOR 2SB1465 PNP SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SB1465 is a mold power darlington transistor developed for low-frequency power amplifier and low-speed
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2SB1465
2SB1465
trasistor
NEC RELAY nec 5
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4CX1500B
Abstract: 4cx1500 SK-800B Eimac 4CX1500B cx1500 4cx15 800 watt audio amplifier 110 watt audio amplifier 8660 4cx1500b8660
Text: The 4CX1500B/8660 is a low voltage, high current tetrode specifically designed for exceptionally low intermodulation distortion and low grid interception. The low distortion characteristics make the 4CX1500B/8660 especially suitable for radio frequency and audio frequency linear amplifier
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4CX1500B/8660
CX1500B/
4CX1500B/8660
4CX1500B
4cx1500
SK-800B
Eimac 4CX1500B
cx1500
4cx15
800 watt audio amplifier
110 watt audio amplifier
8660
4cx1500b8660
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5 pin Intermediate frequency transformer
Abstract: Intermediate frequency transformer 455 IDTF1200NBGI8 GRM155R71C103KA01D F1200ZD F1206 HEADER14P grm155r61a104ka01d
Text: DATASHEET Intermediate Frequency Digital Variable Gain Amplifier GENERAL DESCRIPTION FEATURES The IDTF1200 is a Digitally Controlled Intermediate Frequency Differential Variable Gain Amplifier for BaseStation and other commercial applications with a low IF frequency. The device offers extremely low
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IDTF1200
IDTF1200
ERJ-2RKF2871X
RC0402FR-0747KL
ERJ-2GE0R00X
1008CS-681XJLC
GRM155R71C103KA01D
GRM1555C1H102JA01D
GRM155R61A104KA01D
961102-6404-AR
5 pin Intermediate frequency transformer
Intermediate frequency transformer 455
IDTF1200NBGI8
F1200ZD
F1206
HEADER14P
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Untitled
Abstract: No abstract text available
Text: STS815 Semiconductor NPN Silicon Transistor Description • Low Frequency Amplifier & High Frequency Oscillator Features • Low collector saturation voltage : VCE sat =0.4V(Max.) • Low output capacitance : C ob =4pF(Typ.) • Complementary pair with STS539
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STS815
STS539
KST-9103-000
150mA,
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2SD560
Abstract: nec 2sd560 2sd560 equivalent NEC RELAY
Text: DATA SHEET SILICON POWER TRANSISTOR 2SD560 NPN SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SD560 is a mold power transistor developed for low- ORDERING INFORMATION frequency power amplifiers and low-speed switching. This transistor is
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2SD560
2SD560
O-220AB
O-220AB)
nec 2sd560
2sd560 equivalent
NEC RELAY
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2SK303V4
Abstract: 2SK303V3 2sK303L 2SK303
Text: UNISONIC TECHNOLOGIES CO., LTD 2SK303 Preliminary JFET LOW-FREQUENCY GENERAL-PURPOSE AMPLIFIER APPLICATIONS FEATURES * Ideal For Potentiometers * Analog Switches * Low Frequency Amplifiers * Constant Current Supplies * Impedance Conversion * Halogen Free
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2SK303
2SK303L-x-AE3-R
2SK303G-x-AE3-R
OT-23
2SK303-V2
2SK303-V3
2SK303-V4
2SK303-V5
QW-R206-071
2SK303V4
2SK303V3
2sK303L
2SK303
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2SK3946
Abstract: SANYO marking kf IT10351
Text: 2SK3946 Ordering number : ENA0153 2SK3946 N-Channel Junction Silicon FET Low-Frequency General-Purpose Amplifier, Impedance Converter Applications Applicatins • Low-frequency general-purpose amplifier, impedance conversion, infrared sensor applications.
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2SK3946
ENA0153
A0153-4/4
2SK3946
SANYO marking kf
IT10351
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nec 2561
Abstract: NEC 2561 transistor 2561 nec 2561 a nec NEC semiconductor 2561 transistor NEC 2561 P1093 100MHZ 200MHZ 2SC3356
Text: DATA SHEET PRELIMINARY DATA SHEET Silicon Transistor 2SC5337 NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER DESCRIPTION The 2SC5337 is a high-frequency transistor designed for a low distortion and low noise amplifier on the VHF to
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2SC5337
2SC5337
2SC3356
nec 2561
NEC 2561 transistor
2561 nec
2561 a nec
NEC semiconductor 2561
transistor NEC 2561
P1093
100MHZ
200MHZ
2SC3356
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DS8908B
Abstract: No abstract text available
Text: DS8908 DS8908B AM/FM Digital Phase-Locked Loop Frequency Synthesizer Literature Number: SNOSBD1A DS8908B AM FM Digital Phase-Locked Loop Frequency Synthesizer General Description current if the VCO frequency is low The low noise operational amplifier provided has a high impedance JFET input
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DS8908
DS8908B
19-bit
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 2SK303 JFET LOW-FREQUENCY GENERAL-PURPOSE AMPLIFIER APPLICATIONS FEATURES * Ideal For Potentiometers * Analog Switches * Low Frequency Amplifiers * Constant Current Supplies * Impedance Conversion ORDERING INFORMATION
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2SK303
2SK303G-xx-AE3-R
2SK303G-xx-A3C-R
2SK303G-xx-AQ3-R
2SK303L-xx-T92-B
2SK303G-xx-T92-B
2SK303L-xx-T92-K
2SK303G-xx-T92-K
OT-23
OT-113S
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Untitled
Abstract: No abstract text available
Text: 2SK3666 Ordering number : ENN8158 2SK3666 N-Channel Junction Silicon FET Low-Frequency General-Purpose Amplifier, Impedance Converter Applications Applicatins • Low-frequency general-purpose amplifier, impedance conversion, infrared sensor applications.
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ENN8158
2SK3666
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