1N4725
Abstract: IN4719E 1N4719E 1N4720E 1N4721E 1N4722E 1N4723E 1N4724E 1N4725E
Text: EDAL INDUSTRIES INC m MSE D BCHSVlb D0D032L, 2 ^ • EDL T~ o ! - \:r ,050" \ t . 750 '1 -4 -— 375 " — -750 'J— + £ Bv PIV SEE CHART Io 3 AMPS @ Is 300 AMPS Vf 1 v @ Ir lOuA Ir 2mA STYLE Alep PART NUMBER 75°C 3 AMPS @ 7-5°C @ PIV @ 25°C @ PIV
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1N4719E
1N4720E
1N4721E
1N4722E
1N4723E
1N4724E
1N4725E
1N4725E
1N4725
IN4719E
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1N2610
Abstract: 1N2613 LOUA 1n2611 1N2609E 1N2610E 1N2611E 1N2612E Edal 1N2614E
Text: EDAL IN DU STR IE S INC 45E D 30^S71b DD0QEÖÖ bES • EDL T- oi-h .250” 1 11 m t % A - 032" DIA. .115" DIA- Bv PI7 SEE CHART Io .75 AMP @ Is 30 AMPS Vf 1.1 V Ir lOuAMP @ 50 @ .75 AMP @ 25 c° PIV @ 25 c° @ STYLE c° @ c° A lr x STAMP1N2609E - 1N2619E
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1N2609E
1N2619E
1N2610E
1N2611E
1N2612E
1N2613E
1N2614E
1N2615E
1N2616E
1N2610
1N2613
LOUA
1n2611
1N2611E
Edal
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in4722
Abstract: 1N4725 IN4720 MSe 750 1N4719E 1N4720E 1N4721E 1N4722E 1N4723E 1N4724E
Text: EDAL INDUSTRIES INC MSE D • BCHSTlb □□□□3Eb 2^ ■ EDL T-or-1rr ,050" \ 750*1- 4 *-. 37511 . - 750 «— * & Bv PIV SEE CHART Io 3 AMPS @ Is 300 AMPS Vf 1 v @ Ir lOuA Ir 2mA STYLE Alep PART NUMBER 75°C 3 AMPS @ 7-5°C @ PIV @ 25°C @ PIV @ AMBIENT
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1N4719E
1N4720E
1N4721E
1N4722E
1N4723E
1N4724E
1N4725E
1N4725E
in4722
1N4725
IN4720
MSe 750
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LOUA
Abstract: No abstract text available
Text: E le c tric a l C h ara cteristic s @ 25°C ± 5°C 1 . Short C irc u it C urrent 2.3uA min @ 3mW/aii2, lOkii load 180 rW min 2. Open C irc u it Voltage 3. Dark Reverse Leakage lOuA max. Current @ -IV 4. Operating tem perature range -55°C to 100°C 5. Storage tem perature range
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1N3286
Abstract: LOUA 1N3282-1N3286 OATI 1N3282 1N3283 1N3284 1N3285
Text: \ EDAL IN D U S T R I E S INC 4 5E J m B C H ÍT lb □ □□02RM . • EDI TTO A- t B. pIY t o— S- V SEE CHART 100 mA — ' 25 2.5 AMPS 2.5 y, Q 100mA 25 l.OuA @ PIV 25 PIV 100 vf-t c° r-lOuA PART # PIV 1N3282 1N3283 1N3284 1N3285
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1N3282
1N3283
1N3284
1N3285
1N3286
T571b
100mA
1N3282-1N3286V
1N3282-1N3286
1N3286
LOUA
OATI
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2SB645
Abstract: 3fc transistor AC73
Text: : SILICON PN P T R IP L E DIFFUSED M E SA TRANSISTO R 2SB645 Utait i n me O rower A m p l i f i e r A p p lic a tio n «Â ttŒ -C -fo :V 0 2 &OMAX. ^LOUA O '-2 0 0 V ck y 9 y > 'J , ¿ ' « « » ¡ d i f f i d o : rT »12MHK Typ. tfi.o-<íro 2SDÖÖÖ ¿ 3 X 7 " •; > X * ' J t C 4 ï - i - t o
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2SB645
-200V
26D065.
RATIH33
Tc-25t)
2SB645
3fc transistor
AC73
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LOUA
Abstract: 1N3285 1N3282 1N3283 1N3284 1N3286
Text: EDAL INDU STRI ES INC MSE D / -Ô f - O ' J PXY IÄ SEE CHART . 100 mA 25 2.5 AMPS V 2.5 vf- y Q 100mA 25 T PIV 25 PIV 100 l.OuA P- lOuA PART # .o ‘ PIV 1N3282 1N3283 1N3284 1N3285 1000 1500 2000 2500 3000 1N3286 • . 2£Y. DESCRIPTION
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02ciM
100mA
1N3282
1N3283
1N3284
1N3285
1N3286
1N3282-1N3286
LOUA
1N3286
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Untitled
Abstract: No abstract text available
Text: REVISIONS REV A • 2.840 [7 2 .1 4 ]- I¥ ECN, ERN NO. louauduiv DATE PRODUCT DRAWING DEC20/05 APPRD. K.L. PLASTIC PLASTIC COVER BRACKET / r OVER CONTACTS IN THIS AREA. CAST SHELL BOARDLOCK BRACKET # 4 -4 0 THREADED HOLE SECTION THROUGH MTG HOLE -.3 2 0 [8 .1 3 ]
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DEC20/05
FCE57
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1N2609E
Abstract: 1N2610E 1N2611E 1N2612E 1N2613E 1N2614E 1N2615E 1N2616E 1N2617E 1N2619E
Text: EDAL I N D U S T R I E S INC 4SE D • 3 0 ^ S 7 1 b D D O D Eö ö bES ■ EDL T ^o/-// i .1115" DIA. / - L .032" DIA. Bv PI7 Io Is Yf Ix SEE CHART .75 AMP 30 1 .1 lOuAMP c° AMPS V @ @ STYLE A lrx STAMP1N2609E - 1N2619E EQUIV. TO EDAL P/N 1N2609E
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1N2609E
1N2619E
1N2610E
1N2611E
1N2612E
1N2613E
1N2614E
1N2615E
1N2616E
1N2617E
1N2619E
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TMPZ84C
Abstract: 2 pins crystal oscillator TMPZ84C60P T6497 tokyo denpa
Text: _ TOSHIBA I N T E G R A T E D CIRCUIT TMPZ84C60P TECHNICAL DATA TMPZ84C60P CMOS Z80 Clock Generator/Controller 1. General Description and Features The TMPZ84C60P is a clock generator/controller for the TLCS-Z80 CMOS Family (Microprocessor (MPU) and its peripheral LSI's) fabricated with
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TMPZ84C60P
TMPZ84C60P
TLCS-Z80
TLCS-Z80
TMPZ84C
2 pins crystal oscillator
T6497
tokyo denpa
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Untitled
Abstract: No abstract text available
Text: GTR MODULE SILICON N CHANNEL MOS TYPE MG8G4GM1 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES: . The D rain is Isolated from Case. . 4 MOS FETs are Built-in to 1 Package . With Built-in Free Wheeling Diode. . Low D r a i n-Source ON Resistance
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140gr
Minu00
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Untitled
Abstract: No abstract text available
Text: SÏLONEX s SLED -563L SLED -563F SLED -563E SLED-563L 7 00nm V I S I B L E EMITTER SLED-563F SLED-563E ttrf' 0. 2 1 0 G eneral D escription 0.5 00 The S i l o n e x SLED-563 i s a h i g h o u t p u t G a lliu m A r s e n id e P h o sp h o ru s e m i t t e r w hich
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-563L
-563F
-563E
SLED-563L
SLED-563F
SLED-563E
SLED-563
SLED-563L
SLED-563F
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CRYSTAL 20 mhZ
Abstract: Crystal oscillator 12 MHz 130Q 1N3600 604D PCK604S
Text: OM C HI P SEE D S YSTEMS bT' l OLi S? 0000M47 OCS SD2 PCK604 ^ 5 0 - 0 ^ 50 to 600 MHz Crystal Controlled Frequency Synthesizer OnChip Systems P R O D U C T H IG H L IG H T S 50 - 600 MHz ♦ F requency Range 50 to 6 0 0 MHz 12.5-18.75 MHz CRYSTAL ♦ Inexpensive In p u t C rystal 12.5 to
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b7104S7
PCK604
CRYSTAL 20 mhZ
Crystal oscillator 12 MHz
130Q
1N3600
604D
PCK604S
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KUAN HSI D2A050000
Abstract: No abstract text available
Text: PRODUCT SPECIFICATION DATE : REED RELAY: cosmo D2A050000 ELECTRONICS CORPORATION NO. 50R01013 REV. SHEET 1 OF 2 2 1. OUTSIDE DIMENSION : UNIT ram o d KUAN HSI D2A050000 O — UJ TU UJ 19.5 0.4 \ 5.5 "T 3.0 0. 5 - _ jL - 7. 6 2 - 10 . 15 8.9max. 2.54 2. 5 4
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50R01013
D2A050000
10-2000HZ)
KUAN HSI D2A050000
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Untitled
Abstract: No abstract text available
Text: PRODUCT SPECIFICATION DATE : REED RELAY: co sm o NO. 50R01007 SHEET 1 OF 2 D1B050000 [e l e c t r o n i c s CORPORATION 1. OUTSIDE DIMENSION : UNIT mm O CL KUAN HSI D1B050000 •o— O ' T =l— CUT 19.5 7.0 r 0.4 5.5 T 0.5 0.25 3.0 — _L 7.62 10.15 8.9max.
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50R01007
D1B050000
10-2000HZ)
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Untitled
Abstract: No abstract text available
Text: PRODUCT SPECIFICATION DATE: Reed R e la y : KUAN HSI NO. 50R02020 D1C 121000 ELECTRONICS CO.,LTD. SH E E T 1. OUTSIDE DIMENSION : UNIT mm O . JZL ) Q n KUAN H SI D1C121000 T=i—nr L_l 1.25 7 62— • . - ■*—6.9mox.- 05/12/94- 2.54 2.54 TOLERANCE : ±0.1 mm
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50R02020
D1C121000
121OOO
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DI270B
Abstract: DI8884A RP181
Text: DIONICS INC. 65 RUSH MORE ST., WESTBURY, N.Y. 11590 516*997-7474 D18 88 4A/D I270B High Direct Replacement General Voltage for Cathode National Decoder /Dri ver DM8884A Description The DI8884A is designed to decode four lines of BCD input and drive seven segient digits of gasfilled readout displays. Two separate inputs are
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DIBB84A/DIE70B
DM8884A
DH-B884A
-12aA,
DI270B
DI8884A
RP181
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MG50D2YM1
Abstract: No abstract text available
Text: TOSHIBA {DISCRETE/OPT0> TD 9097250 TOSHIBA DISCRETE/OPTO TOSHIBA SEMICONDUCTOR DE~| TGTT E S G □Dlb4Eti 1 90D D T -3 9 -5 7 16426 TOSHIBA GTR MODULE MG50D2YM1 TECHNICAL DATA SILICON N CHANNEL MOS TYPE HIGH POWER SWITCHING APPLICATIONS. flOTOR CONTROL APPLICATIONS.
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MG50D2YM1
085ii
31/C2)
MG50D2YM1-4
MG50D2YM1-5
T1A20
MG50D2YM1
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Untitled
Abstract: No abstract text available
Text: '7 005120 F eatures 4 « n v-t'cA. Paged. C onfigurations w ith Page Reset on Pozuet—Up AT27C512 - Not Paged, 64K x B AT27C51S - 4 Pages. 16K x fl AT27CS1S - 2 Pages. S2K x 8 Low Power CMOS Operation 40mA max. Active a t SMHx 100y,A max. Stan dby F ast Read Access Time — 120ns
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AT27C512
AT27C51S
AT27CS1S
120ns
200mA
1FN41
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KUAN HSI
Abstract: Reed relay KUAN SS1A120098 1110Q
Text: PRODUCT SPECIFICATION DATE: Reed Relay : KUAN HSI NO. 50R06014 SS1A120098 ELECTRONICS CO.,LTD. SHEET 1. OUTSIDE DIMENSION : UNIT mm 7.0 24.13 KUAN HSI SS1A120098 3.0 Í 0.5 - — 10. 16 — - 5.08 5.08 2. SCHEMATIC : TOP VIEW Ô 1 ISSU E OàVQ CHECK Ô
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SS1A120098
50R06014
SS1A120098
50R06014
100mA
KUAN HSI
Reed relay KUAN
1110Q
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KUAN D1C240000
Abstract: D1C240000
Text: PRODUCT SPECIFICATION DATE : REED RELAY: co sm o D1C240000 ELECTRONICS CORPORATION 03/26/00’ NO. 50R01021 REV. SHEET 1 OF 2 2 1. OUTSIDE DIMENSION : UNIT ram ID CL JZ 1 Q. KUAN HSI D1C240000 9 ^ TD— CT TZJ— CT 19.5 0.4 5.5 3.0 0 .5 - _L -7 .6 2 -
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D1C240000
50R01021
10-2000HZ)
KUAN D1C240000
D1C240000
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KUAN HSI
Abstract: relay reed kuan Reed relay KUAN KUAN relay ru D1B121000 KUAN RELAY Scans-004117 D1B1210
Text: PRODUCT SPECIFICATION DATE: KUAN HSI mÆm Mm JL 05/11/94’ NO. 50R02008 Reed Relay : ^ D1B121000 ELECTRONICS CO.,LTD. 1. OUTSIDE DIMENSION : UNIT m m •Q— Cl n . jz l K U A N HSI ) - SHEET D1B121000 7 . 622.54 2.54 —8.9m ox.-*" TOLERANCE : ± 0 . 1 m m
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D1B121000
50R02008
D1B121000^
KUAN HSI
relay reed kuan
Reed relay KUAN
KUAN
relay ru
D1B121000
KUAN RELAY
Scans-004117
D1B1210
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KUAN d1b240000
Abstract: KUAN D1B240000 KUAN HSI D1B240000
Text: PRODUCT SPECIFICATION DATE : cosmo REED RELAY: D1B240000 ELECTRONICS CORPORATION NO. 50R01009 REV. SHEET 1 OF 2 2 1. OUTSIDE DIMENSION : UNIT mm £2 d jm □_ KUAN HSI D1B240000 O—o a — i=r 19.5 7.0 i i 0.4 5.5 0. 2 5 - T 3.0 _L 0. 5 - I 7.62 10.15
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D1B240000
50R01009
10-2000HZ)
KUAN d1b240000
KUAN
D1B240000
KUAN HSI D1B240000
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2N3903
Abstract: 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 2N4400 2N4401
Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PA CK A GE V C E sa t E b v CEO Device Type @ 1 0 m A -(V) Min. M ax. @ l c (m A) V c e (V) 10 10 Max. @ lc (m A ) 300 350 250 300 300 25 ?.5 2.5 2.5 2.5 200 200 200 200 200 350 350 350 350
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2N3903
2N3904
2N3905
2N3906
2N4123
2N4124
2N4125
2N4126
2N4400
2N4401
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