Application Notes on LM7805
Abstract: lm7805 lm7805 p PCC104BCTND PCC104bct-nd ATC 4r7 capacitor 100b LM7805 05 PTF240101S BCP56 ceramic capacitor 47 pf
Text: PTF240101S Thermally-Enhanced High Power RF LDMOS FET 10 W, 2400 – 2700 MHz Description The PTF240101S is a 10-watt, internally-matched GOLDMOS FET device intended for CDMA2000 and WiMAX applications in the 2.4 to 2.7 GHz band. Full gold metallization ensures excellent device lifetime and reliability.
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PTF240101S
PTF240101S
10-watt,
CDMA2000
Application Notes on LM7805
lm7805
lm7805 p
PCC104BCTND
PCC104bct-nd
ATC 4r7 capacitor 100b
LM7805 05
BCP56
ceramic capacitor 47 pf
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LM7805
Abstract: PCC104BCTND PCC104bct-nd H-32259-2 rf transistor 2.5GHz 240101S
Text: PTF240101S Thermally-Enhanced High Power RF LDMOS FET 10 W, 2400 – 2700 MHz Description The PTF240101S is a 10-watt, internally-matched GOLDMOS FET device intended for CDMA2000 and WiMAX applications in the 2.4 to 2.7 GHz band. Full gold metallization ensures excellent device lifetime and reliability.
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PTF240101S
PTF240101S
10-watt,
CDMA2000
H-32259-2
LM7805
PCC104BCTND
PCC104bct-nd
H-32259-2
rf transistor 2.5GHz
240101S
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LM7805 M SMD
Abstract: LM7805 smd LM7805 footprint PG-RFP-10 RO4320 smd transistor marking C14 8 LM7805 smd transistor marking L5 LM7805 smd VOLTAGE REGULATOR elna 50v
Text: PTF180101M High Power RF LDMOS Field Effect Transistor 10 W, 1.0 – 2.0 GHz Description The PTF180101M is an unmatched 10-watt GOLDMOS FET intended for class AB base station applications in the 1 to 2 GHz band. This LDMOS device offers excellent gain, efficiency and linearity performance in a small
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PTF180101M
PTF180101M
10-watt
PG-RFP-10
LM7805 M SMD
LM7805 smd
LM7805 footprint
PG-RFP-10
RO4320
smd transistor marking C14 8
LM7805
smd transistor marking L5
LM7805 smd VOLTAGE REGULATOR
elna 50v
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LM7805 smd
Abstract: LM7805 smd 8 pin LM7805 M SMD SMD TRANSISTOR MARKING l4 LM7805 smd transistor marking wa LM7805 05 lm7805 datasheet C17-R2 elna ds
Text: PTF180101M High Power RF LDMOS Field Effect Transistor 10 W, 1.0 – 2.0 GHz Description The PTF180101M is an unmatched 10-watt GOLDMOS FET intended for class AB base station applications in the 1 to 2 GHz band. This LDMOS device offers excellent gain, efficiency and linearity performance in a small
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PTF180101M
PTF180101M
10-watt
PG-RFP-10
LM7805 smd
LM7805 smd 8 pin
LM7805 M SMD
SMD TRANSISTOR MARKING l4
LM7805
smd transistor marking wa
LM7805 05
lm7805 datasheet
C17-R2
elna ds
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LM7805 M SMD
Abstract: LM7805 smd 8 pin LM7805 smd smd lm7805 LM7805 05 LM7805 LM7805 footprint lm7805 datasheet P221E marking us capacitor pf l1
Text: PTF210101M High Power RF LDMOS Field Effect Transistor 10 W, 2110 – 2170 MHz Description The PTF210101M is an unmatched 10-watt GOLDMOS FET intended for class AB base station applications in the 2110 to 2170 MHz band. This LDMOS device offers excellent gain, efficiency and linearity performance in
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PTF210101M
PTF210101M
10-watt
PG-RFP-10
LM7805 M SMD
LM7805 smd 8 pin
LM7805 smd
smd lm7805
LM7805 05
LM7805
LM7805 footprint
lm7805 datasheet
P221E
marking us capacitor pf l1
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240101S
Abstract: No abstract text available
Text: PTF240101S Thermally-Enhanced High Power RF LDMOS FET 10 W, 2400 – 2700 MHz Description The PTF240101S is a 10-watt, internally-matched GOLDMOS FET device intended for CDMA 2000 applications in the 2.4 to 2.7 GHz band. Full gold metallization ensures excellent device lifetime and reliability.
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PTF240101S
PTF240101S
10-watt,
240101S
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LM7805 smd
Abstract: LM7805 smd transistor marking C14
Text: Preliminary PTF180101M High Power RF LDMOS Field Effect Transistor 10 W, PCS Band, 1930 – 1990 MHz Description The PTF180101M is a 10-watt GOLDMOS FET device intended for EDGE applications in the PCS band. This LDMOS device operates at 50% efficiency
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PTF180101M
PTF180101M
10-watt
PTF180101M*
TSSOP-10
LM7805 smd
LM7805
smd transistor marking C14
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diode c723
Abstract: PTFA072401FL VARIABLE RESISTOR 2K LM7805 PTFA072401EL RO4350 BCP56 LM7805 voltage regulator packages DD 127 D TRANSISTOR
Text: PTFA072401EL PTFA072401FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 240 W, 725 – 770 MHz Description The PTFA072401EL and PTFA072401FL are 240-watt LDMOS FETs designed for use in cellular power amplifier applications in the 725 to
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PTFA072401EL
PTFA072401FL
PTFA072401EL
PTFA072401FL
240-watt
H-33288-2
H-34288-2
diode c723
VARIABLE RESISTOR 2K
LM7805
RO4350
BCP56
LM7805 voltage regulator packages
DD 127 D TRANSISTOR
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LM7805 M SMD
Abstract: LM7805 smd C5 MARKING TRANSISTOR lm7805 datasheet future LM7805 smd 8 pin elna 50v transistor smd marking ND LM7805 PTF180101M TPSE106K050R0400
Text: PTF180101M High Power RF LDMOS Field Effect Transistor 10 W, 1.0 – 2.0 GHz Description The PTF180101M is an unmatched 10-watt GOLDMOS FET intended for class AB base station applications in the 1 to 2 GHz band. This LDMOS device offers excellent gain, efficiency and linearity performance in a small
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PTF180101M
PTF180101M
10-watt
LM7805 M SMD
LM7805 smd
C5 MARKING TRANSISTOR
lm7805 datasheet future
LM7805 smd 8 pin
elna 50v
transistor smd marking ND
LM7805
TPSE106K050R0400
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LM7805 smd 8 pin
Abstract: LM7805 smd smd lm7805 LM7805 M SMD SMD package marking ab l16 JX900 LM7805 05 LM7805 C5 MARKING TRANSISTOR marking us capacitor pf l1
Text: PTF080101M High Power RF LDMOS Field Effect Transistor 10 W, 450 – 960 MHz Description The PTF080101M is an unmatched 10-watt GOLDMOS FET intended for class AB base station applications in the 450 MHz to 960 MHz band. This LDMOS device offers excellent gain, efficiency and linearity performance in
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PTF080101M
PTF080101M
10-watt
PG-RFP-10
LM7805 smd 8 pin
LM7805 smd
smd lm7805
LM7805 M SMD
SMD package marking ab l16
JX900
LM7805 05
LM7805
C5 MARKING TRANSISTOR
marking us capacitor pf l1
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PTF240101S
Abstract: LM7805
Text: PTF240101S Thermally-Enhanced High Power RF LDMOS FET 10 W, 2400 – 2700 MHz Description The PTF240101S is a 10-watt, internally-matched GOLDMOS FET device intended for CDMA 2000 applications in the 2.4 to 2.7 GHz band. Full gold metallization ensures excellent device lifetime and reliability.
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PTF240101S
PTF240101S
10-watt,
LM7805
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LM7805 M SMD
Abstract: LM7805 smd 8 pin smd transistor marking l7 smd transistor marking C14 LM7805 smd smd transistor marking l6 transistor smd marking ND BCP56 LM7805 PTF210101M
Text: PTF210101M High Power RF LDMOS Field Effect Transistor 10 W, 2110 – 2170 MHz Description The PTF210101M is an unmatched 10-watt GOLDMOS FET intended for class AB base station applications in the 2110 to 2170 MHz band. This LDMOS device offers excellent gain, efficiency and linearity performance in
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PTF210101M
PTF210101M
10-watt
PG-RFP-10
LM7805 M SMD
LM7805 smd 8 pin
smd transistor marking l7
smd transistor marking C14
LM7805 smd
smd transistor marking l6
transistor smd marking ND
BCP56
LM7805
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LM7805 smd 8 pin
Abstract: smd transistor marking l7 SMD package marking ab l16 LM7805 smd smd lm7805 transistor smd marking ND BCP56 LM7805 PTF080101M smd transistor marking C14
Text: PTF080101M High Power RF LDMOS Field Effect Transistor 10 W, 450 – 960 MHz Description The PTF080101M is an unmatched 10-watt GOLDMOS FET intended for class AB base station applications in the 450 MHz to 960 MHz band. This LDMOS device offers excellent gain, efficiency and linearity performance in
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PTF080101M
PTF080101M
10-watt
PG-RFP-10
LM7805 smd 8 pin
smd transistor marking l7
SMD package marking ab l16
LM7805 smd
smd lm7805
transistor smd marking ND
BCP56
LM7805
smd transistor marking C14
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Untitled
Abstract: No abstract text available
Text: PTF180301E PTF180301F Thermally-Enhanced High Power RF LDMOS FETs 30 Watt, 1805 – 1880 MHz, 1930 – 1990 MHz Description The PTF180301E and PTF180301F are 30-watt, internally-matched GOLDMOS FETs intended for GSM EDGE and CDMA applications in the DCS/PCS band. Thermally-enhanced packaging provides the coolest
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PTF180301E
PTF180301F
30-watt,
PTF180301F*
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LM7805 voltage regulator
Abstract: db25 ISP parallel port db25 pin connector lm7805 national DB25 CONNECTOR 276-1770 parallel port programming circuit diagram of adapter LM7805 Application Note National Semiconductor Radio Shack circuit
Text: National Semiconductor Application Note 1151 Wallace Ly March 2001 ABSTRACT This application note describes the construction of the COP8 ISP MICROWIRE Programming Adapter for the IBM PC compatible. A Bill of Material BOM will be presented and the cost of the items will be displayed. Total cost of the
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PTF180301E
Abstract: LM7805 RESISTOR 2020 package 47 ohm 180301E
Text: PTF180301E PTF180301F Thermally-Enhanced High Power RF LDMOS FETs 30 Watt, 1805 – 1880 MHz, 1930 – 1990 MHz Description The PTF180301E and PTF180301F are 30-watt, internally-matched GOLDMOS FETs intended for GSM EDGE and CDMA applications in the DCS/PCS band. Thermally-enhanced packaging provides the coolest
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PTF180301E
PTF180301F
30-watt,
PTF180301F*
LM7805
RESISTOR 2020 package 47 ohm
180301E
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tca 770
Abstract: tca 765 ceramic capacitor 39 pf
Text: PTFA072401EL PTFA072401FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 240 W, 725 – 770 MHz Description The PTFA072401EL and PTFA072401FL are 240-watt LDMOS FETs designed for use in cellular power amplifier applications in the
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PTFA072401EL
PTFA072401FL
PTFA072401FL
240-watt
H-33288-2
H-34288-2
tca 770
tca 765
ceramic capacitor 39 pf
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200B
Abstract: BCP56 LM7805 PTFA210451E infineon gold
Text: PTFA210451E Thermally-Enhanced High Power RF LDMOS FET 45 W, 2110 – 2170 MHz Description The PTFA210451E is a thermally-enhanced, 45-watt, internally matched GOLDMOS FET intended for WCDMA applications. It is characaterized for single- and two-carrier WCDMA operation from
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PTFA210451E
PTFA210451E
45-watt,
200B
BCP56
LM7805
infineon gold
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Untitled
Abstract: No abstract text available
Text: PTFA261301E Thermally-Enhanced High Power RF LDMOS FET 130 W, 2.62 – 2.68 GHz PTFA261301E Package 30260 Description The PTFA261301E is a thermally-enhanced 130-watt, internally-matched GOLDMOS FET intended for ultra-linear applications. It is characterized
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PTFA261301E
PTFA261301E
130-watt,
CDMA2000
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PTFA072401FLV5XWSA1
Abstract: VARIABLE RESISTOR 2K LM7805 LTN 156
Text: PTFA072401EL PTFA072401FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 240 W, 30 V, 725 – 770 MHz Description The PTFA072401EL and PTFA072401FL are 240-watt LDMOS FETs designed for use in cellular power amplifier applications in the
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PTFA072401EL
PTFA072401FL
PTFA072401FL
240-watt
H-33288-2
H-34288-2
PTFA072401FLV5XWSA1
VARIABLE RESISTOR 2K
LM7805
LTN 156
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ssy 1920
Abstract: LM7805 SSY C5
Text: PTFA191001E PTFA191001F Thermally-Enhanced High Power RF LDMOS FETs 100 W, 1930 – 1990 MHz Description The PTFA191001E and PTFA191001F are thermally-enhanced, 100-watt, internally-matched GOLDMOS FETs intended for WCDMA, IS-95 and CDMA2000 applications. They are characterized for singleand two-carrier WCDMA operation from 1930 to 1990 MHz. Thermally-enhanced packaging provides the coolest operation available. Full gold metallization ensures excellent device lifetime and
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PTFA191001E
PTFA191001F
100-watt,
IS-95
CDMA2000
PTFA191001F*
ssy 1920
LM7805
SSY C5
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LM7805
Abstract: A211801E BCP56 PTFA211801E R250 H-36260-2 infineon 6260
Text: PTFA211801E Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 180 W, 2110 – 2170 MHz Description The PTFA211801E is a thermally-enhanced, 180-watt, internally matched LDMOS FET intended for WCDMA applications. It is characaterized for single- and two-carrier WCDMA operation from
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PTFA211801E
PTFA211801E
180-watt,
H-36260-2
LM7805
A211801E
BCP56
R250
H-36260-2
infineon 6260
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PTF191601E
Abstract: BCP56 LM7805 ATC 4r7 capacitor 100b
Text: PTF191601E PTF191601F Thermally-Enhnaced High Power RF LDMOS FETs 160 W, 1930 – 1990 MHz Description The PTF191601E and PTF191601F are 160-watt, internally-matched GOLDMOS FETs intended for GSM EDGE and CDMA applications in the 1930 to 1990 MHz band. Thermally-enhanced packaging provides the
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PTF191601E
PTF191601F
PTF191601E
PTF191601F
160-watt,
PTF191601F*
BCP56
LM7805
ATC 4r7 capacitor 100b
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Untitled
Abstract: No abstract text available
Text: PTFA043002E Thermally-Enhanced High Power RF LDMOS FET 300 W, 470 – 860 MHz Description The PTFA043002 is a 300-watt, internally-matched, laterally-diffused, GOLDMOS push-pull FET intended for analog and digital broadcast, including 8VSB and COFDM applications from 470 to 860 MHz. The
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PTFA043002E
PTFA043002
300-watt,
H-30275-4
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