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    PTF191601E Search Results

    PTF191601E Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Type PDF
    PTF191601E Infineon Technologies LDMOS RF Power Field Effect Transistor 160 W, 1930-1990 MHz Original PDF
    PTF191601E Infineon Technologies 1800 MHz to 2000 MHz; Package: PG:30260; Flange Type: Bolt Down; Matching: I/O; Frequency Band: 1,930.0 - 1,990.0 MHz; P1dB (typ): 160.0 W; Supply Voltage: 28.0 V Original PDF

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    PTF191601E

    Abstract: BCP56 LM7805 ATC 4r7 capacitor 100b
    Text: PTF191601E PTF191601F Thermally-Enhnaced High Power RF LDMOS FETs 160 W, 1930 – 1990 MHz Description The PTF191601E and PTF191601F are 160-watt, internally-matched GOLDMOS FETs intended for GSM EDGE and CDMA applications in the 1930 to 1990 MHz band. Thermally-enhanced packaging provides the


    Original     		PDF PTF191601E PTF191601F PTF191601E PTF191601F 160-watt, PTF191601F* BCP56 LM7805 ATC 4r7 capacitor 100b

    PTF191601

    Abstract: PTF191601E
    Text: Advance Information PTF191601 LDMOS RF Power Field Effect Transistor 160 W, 1930 – 1990 MHz Description Features The PTF191601 is a 160 W, internally matched GOLDMOS FET intended for GSM and EDGE applications in the 1930 to 1990 MHz band. Full gold metallization ensures excellent device lifetime and reliability.


    Original     		PDF PTF191601 PTF191601 PTF191601E