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    LL4152 Search Results

    LL4152 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    LL4152 International Semiconductor SWITCHING DIODE Scan PDF
    LL4152 ITT Industries Silicon Diodes Scan PDF
    LL4152 Micronas Semiconductor Silicon Diodes Scan PDF
    LL4152 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    LL4152 SynSemi Semiconductor Scan PDF

    LL4152 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: LL4152 Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current150m V(RRM)(V) Rep.Pk.Rev. Voltage40 t(rr) Max.(s) Rev.Rec. Time2n @I(F) (A) (Test Condition)10m @I(R) (A) (Test Condition)1.0m V(FM) Max.(V) Forward Voltage.55 @I(FM) (A) (Test Condition)100u


    Original     		PDF LL4152 Current150m Voltage40 Current50n StyleDO-213AA

    LL914

    Abstract: LL4149 LL4151 LL4152 LL4153 LL4154 LL4447 LL4449 LL4454
    Text: LL914.LL4454 SILICON EPITAXIAL PLANAR DIODES for General Purpose and Switching. LL-34 Cathode band Peak reverse Type voltage Max. aver. rectified current Max. power dissip. o Max. Max. junction forward temper- voltage at 25 C ature Ptot mW o drop Max. current


    Original     		PDF LL914. LL4454 LL-34 LL914 LL4149 LL4151 LL4152 LL4453 LL914 LL4149 LL4151 LL4152 LL4153 LL4154 LL4447 LL4449 LL4454

    LL4149

    Abstract: LL4151 LL4152 LL4153 LL4154 LL4447 LL4449 LL4454 LL914
    Text: LL914.LL4454 SILICON EPITAXIAL PLANAR DIODES for General Purpose and Switching. Peak reverse Type voltage Max. aver. rectified current Max. power dissip. o LL-34 Max. Max. junction forward temper- voltage at 25 C ature Ptot mW o drop Max. current at VRMV


    Original     		PDF LL914. LL4454 LL-34 LL914 LL4149 LL4151 LL4152 max30 LL4453 LL4149 LL4151 LL4152 LL4153 LL4154 LL4447 LL4449 LL4454 LL914

    LL4149

    Abstract: LL4151 LL4152 LL4153 LL4154 LL4447 LL4449 LL4454 LL914
    Text: LL914.LL4454 SILICON EPITAXIAL PLANAR DIODES for General Purpose and Switching. Peak reverse Type voltage Max. aver. rectified current Max. power dissip. o LL-34 Max. Max. junction forward temper- voltage at 25 C ature Ptot mW o drop Max. current at VRMV


    Original     		PDF LL914. LL4454 LL-34 LL914 LL4149 LL4151 LL4152 LL4453 LL4149 LL4151 LL4152 LL4153 LL4154 LL4447 LL4449 LL4454 LL914

    diodes ir

    Abstract: LL4149 LL4151 LL4152 LL4153 LL4154 LL4447 LL4449 LL4454 LL914
    Text: LL914.LL4454 SILICON EPITAXIAL PLANAR DIODES for General Purpose and Switching. Peak reverse Type voltage Max. aver. rectified current Max. power dissip. o LL-34 Max. Max. junction forward temper- voltage at 25 C ature Ptot mW o drop Max. current at VRMV


    Original     		PDF LL914. LL4454 LL-34 LL914 LL4149 LL4151 LL4152 max30 LL4453 diodes ir LL4149 LL4151 LL4152 LL4153 LL4154 LL4447 LL4449 LL4454 LL914

    BAQ33

    Abstract: BAQ34 BAQ35 BAV100 BAV101 BAV102 BAV103 LL4148 LL4150 LL4151
    Text: Surface Mount Fast / Ultra Fast Bridge Rectifiers Part No. CrossReference RMB2S RMB4S RMB6S - EDF1AS EDF1BS EDF1CS EDF1DS - Max. Avg. Rectified Current Peak Inverse Voltage Peak Fwd. Surge Current @ 8.3 ms Superimposed Max. Forward Voltage @ 25oC @ Rated Io


    Original     		PDF -65oC 175oC KDS160E BAQ33 BAQ34 BAQ35 BAV100 BAV101 BAV102 BAV103 LL4148 LL4150 LL4151

    LL4149

    Abstract: No abstract text available
    Text: LL914.LL4454 SILICON EPITAXIAL PLANAR DIODES for General Purpose and Switching. Peak reverse Type voltage Max. aver. rectified current Max. power dissip. o LL-34 Max. Max. junction forward temper- voltage at 25 C ature Ptot mW o drop Max. current at VRMV


    Original     		PDF LL914. LL4454 LL-34 LL914 LL4149 LL4151 LL4152 LL4451 LL4453 LL4149

    1N627

    Abstract: la 4450 1N459a LL4148 LL4149 LL4150 LL4151 LL4152 LL4154 LL4446
    Text: SW ITC H IN G DIO DES, SU RFA CE MOUNT, MELF PACKAGE Peak Power IS I P a rt Num ber LL4148 LL4149 LL415Q LL4151 LL4152 U 4153 LL4154 LL4446 LL4447 LL4448 L.L4449 L 1.4450 LL4451 LL4453 LL4454 Re er e D iss ip a tio n Voltage P„ I*» V,M VòltS) M a x im u m


    OCR Scan     		PDF LL4148 LL4149 LL4150 LL4151 LL4152 U4153 LL4154 LL4446 LL4447 LL4448 1N627 la 4450 1N459a LL4152

    1N4152

    Abstract: 1N4152M LL4152
    Text: SynSEMi 5YM5EMI 5EMIC0HDUCT0R_ 1N4152 1N4152M LL4152 - DO-35 Axial-leaded Package - DO-34 Axial-leaded Package - LL-34 Surface Mount Package Device Electrical Characteristics S ym bol t a = 25°c unless otherwise noted.) P aram eter L im its T est C o n d itio n


    OCR Scan     		PDF 1N4152 1N4152M LL4152 LL-34 100pA 250pA

    Untitled

    Abstract: No abstract text available
    Text: 4684955 a? I T T SEMICONDUCTORS 87D 02327 »e 1m^a^ss 0DDS3a? t J~ D r . o9 SILICON DIODES General Purpose and Switching Diodes in MiniMELF Package Type Peak Inv. Voltage PIV M ax. Aver. Rectified Current lo Pow er Junction Dissipation Tem peraat 25 °C ture T,


    OCR Scan     		PDF LL4148 LL4149 LL4150 LL4151 LL4152 LL4153 LL4154 LL4446 LL4447 LL4448

    LL4149

    Abstract: LL4150 LL4152 LL4153 LL4447 LL4449 LL4450 LL4451 LL4453 LL4454
    Text: ITT S E M I C O N D / INTERMETALL b lE » • 4bfl2711 0003172 2^3 m i S l Silicon Diodes Silicon Diodes for general purpose and switching Cathode Mark h - 3.5*01-» / - These diodes are identical electrically to the corresponding JEDEC 1N . . . types.


    OCR Scan     		PDF 4b62711 01--K LL4149 LL4150 LL4152 LL4153 LL4447 LL4449 LL4450 LL4451 LL4453 LL4454

    TCA700Y equivalent

    Abstract: SAJ300R SAF1092 SAK215 n525 by133 tca700y itt zener diode zpd ITT INTERMETALL BC327-25
    Text: Pages Contents 2 and 3 List of Types 4 to 7 DIGIT2000 Digital TV System 8 to 21 ICs for TV and Radio Receivers 22 ICs for Telephone Applications 23 ICs for Electronic Clocks 24 and 25 ICs for Automobile Applications 26 ICs for other Applications 27 Voltage Stabilizers


    OCR Scan     		PDF DIGIT2000 237th YU-61000 TCA700Y equivalent SAJ300R SAF1092 SAK215 n525 by133 tca700y itt zener diode zpd ITT INTERMETALL BC327-25

    A2 diode

    Abstract: 1N414S
    Text: I T T CORP/ I T T CMPNTS 31E D • 4bê2bê4 00Q13QÔ 1 ■ SILICON DIODES - - - — - - - - : General Purpose and Switching Diodes in DO-35 Package Type Peak Inv. Voltage PIV Max. Aver. Power Junction Rectified Dissipation TemperaCurrent lo at 25 'G


    OCR Scan     		PDF 00Q13QÔ DO-35 1N914 1N414S 1N4149 1N4150 1N4151 1N4152 1N4153 1N4154 A2 diode

    1n4148 ITT

    Abstract: 1N914 ITT 1N914/1N4148 1n4448 itt 1N4148 1N4149 1N4150 1N4151 1N4152 1N4153
    Text: I T T CORP/ I T T CMPNTS 31E D • 4bê2bê4 00Q13QÔ 1 ■ SILICON DIODES - - - - - — - - : G en era l P u r p o s e a n d S w it c h in g D io d e s in D O -3 5 P a ck a ge Type Peak Inv. Voltage PIV Max. Aver. Rectified Current lo Power


    OCR Scan     		PDF DO-35 1N914 lF-10mA RL-100Â 1N4148 1N4149 1N4150 1n4148 ITT 1N914 ITT 1N914/1N4148 1n4448 itt 1N4151 1N4152 1N4153